TSTS7300

TSTS730. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics. Features D D D D D D High radiant intensity Suitable for pulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8642 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Test Conditions Tcase 25 °C tp/T = 0.5, tp 100 ms, Tcase 25 °C tp 100 ms Symbol VR IF IFM IFSM PV PV Tj Tstg RthJA RthJC Value 5 250 500 2.5 170 500 100 –55...+100 450 150 Unit V mA mA A mW mW °C °C K/W K/W x x x x Tcase x 25 °C Document Number 81048 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 1 (5) TSTS730. Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise Time Fall Time Test Conditions IF = 100 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp 20 ms IF = 100 mA x x Symbol VF V(BR) Cj TKfe ϕ Min 5 Typ 1.3 30 7 –0.8 ±12 950 50 400 400 Max 1.7 fe IF = 100 mA IF = 100 mA IF = 1.5 A, tp/T = 0.01, tp 10 ms IF = 1.5 A, tp/T = 0.01, tp 10 ms lp Dl tr tf x x Unit V V pF mW %/K deg nm nm ns ns Type Dedicated Characteristics Tamb = 25_C Parameter Radiant Intensity y Test Conditions IF=100mA, tp=20ms Type TSTS7300 TSTS7301 TSTS7302 TSTS7303 Symbol Ie Ie Ie Ie Min 4 6.3 10 16 Typ 6.3 10 16 25 Max 12.5 20 32 Unit mW/sr mW/sr mW/sr mW/sr Typical Characteristics (Tamb = 25_C unless otherwise specified) 600 PV – Power Dissipation ( mW ) IF – Forward Current ( mA ) 500 400 300 200 RthJA 100 0 0 94 8017 e 300 RthJC 250 200 RthJC 150 100 50 0 25 50 75 100 125 94 8018 e RthJA 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (5) Document Number 81048 Rev. 2, 20-May-99 TSTS730. Vishay Telefunken 101 I e – Radiant Intensity ( mW/sr ) I F – Forward Current ( A ) 1000 TSTS 7302 IFSM = 2.5 A ( Single Pulse ) tp / T = 0.01 100 0.05 0.1 0.2 0.5 10–1 10–2 100 TSTS 7303 10 1 TSTS 7301 tp / T = 0.01 , tp = 20 ms 0.1 10–1 100 101 tp – Pulse Duration ( ms ) 102 94 8004 e 100 94 8003 e 101 102 103 IF – Forward Current ( mA ) 104 Figure 3. Pulse Forward Current vs. Pulse Duration 104 IF – Forward Current ( mA ) Figure 6. Radiant Intensity vs. Forward Current 1000 Fe – Radiant Power ( mW ) 0 1 2 3 4 103 102 101 100 10–1 100 10 1 0.1 100 94 7977 e 94 7996 e VF – Forward Voltage ( V ) 101 102 103 IF – Forward Current ( mA ) 104 Figure 4. Forward Current vs. Forward Voltage 1.2 V Frel – Relative Forward Voltage 1.1 I e rel ; Fe rel IF = 10 mA 1.0 0.9 Figure 7. Radiant Power vs. Forward Current 1.6 1.2 IF = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 100 94 7993 e 0 –10 0 10 50 100 140 94 7990 e Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature Document Number 81048 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 3 (5) TSTS730. Vishay Telefunken 1.25 1.0 I e rel – Relative Radiant Intensity 0° 10 ° 20 ° 30° Fe rel – Relative Radiant Power 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 0.75 0.5 0.25 IF = 100 mA 0 900 950 1000 94 7994 e l – Wavelength ( nm ) 94 8021 e Figure 9. Relative Radiant Power vs. Wavelength Figure 10. Relative Radiant Intensity vs. Angular Displacement Dimensions in mm 14487 www.vishay.de • FaxBack +1-408-970-5600 4 (5) Document Number 81048 Rev. 2, 20-May-99 TSTS730. Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81048 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (5)