US1G

New Product US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition DO-214AC (SMA) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF TJ max. 1.0 A 50 V to 1000 V 30 A 50 ns, 75 ns 1.0 V, 1.7 V 150 °C TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL = 110 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating and storage temperature range VRRM VRMS VDC IF(AV) IFSM TJ, TSTG SYMBOL US1A UA 50 35 50 US1B UB 100 70 100 US1D UD 200 140 200 US1G UG 400 280 400 1.0 30 - 55 to + 150 US1J UJ 600 420 600 US1K UK 800 560 800 US1M UM 1000 700 1000 V V V A A °C UNIT Document Number: 89274 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product US1A thru US1M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance TEST CONDITIONS 1.0 A TA = 25 °C TA = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz SYMBOL VF (1) IR trr CJ 50 15 US1A US1B US1D US1G US1J US1K 1.7 10 μA 50 75 10 ns pF US1M UNIT V 1.0 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance SYMBOL RJA RJL (1) (1) (1) US1A US1B US1D US1G 75 US1J US1K US1M UNIT °C/W 27 Note PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad area ORDERING INFORMATION (Example) PREFERRED P/N US1J-M3/61T US1J-M3/5AT UNIT WEIGHT (g) 0.064 0.064 PREFERRED PACKAGE CODE 61T 5AT BASE QUANTITY 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERSITICS CURVES (TA = 25 °C unless otherwise noted) 1.2 30 Average Forward Rectified Current (A) 1.0 Peak Forward Surge Current (A) Resistive or Inductive Load 25 TL = 110 °C 8.3 ms Single Half Sine-Wave 0.8 20 0.6 15 0.4 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 10 0.2 5 0 0 25 50 75 100 125 150 0 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89274 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product US1A thru US1M Vishay General Semiconductor 100 1000 Instantaneous Forward Current (A) Instantaneous Reverse Leakage Current (µA) TJ = 150 °C 100 TJ = 125 °C 10 TJ = 125 °C 1 TJ = 150 °C 10 TJ = 100 °C TJ = 100 °C 0.1 TJ = 25 °C 0.01 0.3 US1A thru US1G 1 US1J thru US1M 0.1 TJ = 25 °C 0.01 0.5 0.7 0.9 1.1 1.3 1.5 1.7 0 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Reverse Leakage Characteristics 100 100 TJ = 150 °C US1A thru US1G TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Reverse Leakage Current (µA) 10 TJ = 125 °C 1 TJ = 100 °C Junction Capacitance (pF) 10 US1J thru US1M 0.1 US1A thru US1G TJ = 25 °C 0.01 0 20 40 60 80 100 1 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 7 - Typical Junction Capacitance 100 100 TJ = 150 °C 10 TJ = 125 °C Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 10 1 TJ = 100 °C 0.1 TJ = 25 °C US1J thru US1M 0.01 0.2 1 0.7 1.2 1.7 2.2 2.7 3.2 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Instantaneous Forward Characteristics Fig. 8 - Typical Transient Thermal Impedance Document Number: 89274 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product US1A thru US1M Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89274 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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