V3P6-M3-84A

New Product V3P6 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES TMBS® eSMP® Series • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-220AA (SMP) • Not recommended for PCB bottom side wave mounting • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3.0 A TJ max. 3.0 A 60 V 60 A 0.48 V 150 °C MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range Notes (1) Mounted on 8 mm x 8 mm pad areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area VRRM IF (1) IF (2) SYMBOL V3P6 V36 60 3.0 UNIT V A 2.4 60 10 000 - 55 to + 150 A V/μs °C IFSM dV/dt TJ, TSTG Document Number: 89344 Revision: 18-Oct-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product V3P6 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Instantaneous forward voltage TEST CONDITIONS IF = 3.0 A TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VF (1) TYP. 0.53 0.48 4 250 MAX. 0.63 V 0.59 900 15 μA mA pF UNIT Reverse current Typical junction capacitance V R = 60 V 4.0 V, 1 MHz IR (2) CJ Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER Typical thermal resistance SYMBOL RθJA RθJM (1) (2) V3P6 125 UNIT °C/W 15 Notes (1) Free air, mounted on recommended PCB, 1 oz. pad area; thermal resistance R θJA - junction to ambient (2) Units mounted on PCB with specific copper pad areas; R θJM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N V3P6-M3/84A V3P6-M3/85A UNIT WEIGHT (g) 0.024 0.024 PREFERRED PACKAGE CODE 84A 85A BASE QUANTITY 3000 10 000 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 3.5 2.4 D = 0.5 D = 0.8 D = 0.3 Average Forward Rectified Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 TM Measured at Terminal 2.0 Average Power Loss (W) D = 0.2 D = 0.1 1.6 D = 1.0 1.2 T 0.8 0.4 D = tp/T tp 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89344 Revision: 18-Oct-10 New Product V3P6 Vishay General Semiconductor 100 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 10 TA = 150 °C TA = 125 °C Junction Capacitance (pF) 100 1 TA = 100 °C TA = 25 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 1000 10 TA = 150 °C TA = 125 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) Junction to Ambient 100 1 TA = 100 °C 0.1 10 0.01 TA = 25 °C 0.001 20 40 60 80 100 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-220AA (SMP) Cathode Band 0.012 (0.30) REF. 0.086 (2.18) 0.074 (1.88) 0.053 (1.35) 0.041 (1.05) 0.036 (0.91) 0.024 (0.61) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) 0.100 (2.54) 0.025 0.030 (0.635) (0.762) 0.050 (1.27) Document Number: 89344 Revision: 18-Oct-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1