VBP104S_11

VBP104S, VBP104SR www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount VBP104S • Package form: GW, RGW • Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 • Radiant sensitive area (in mm2): 4.4 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity:  = ± 65° VBP104SR • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS DESCRIPTION VBP104S and VBP104SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 4.4 mm2 sensitive area detecting visible and near infrared radiation. • High speed photo detector PRODUCT SUMMARY COMPONENT VBP104S VBP104SR Ira (μA) 35 35  (deg) ± 65 ± 65 0.1 (nm) 430 to 1100 430 to 1100 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VBP104S VBP104SR Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 1000 pcs, 1000 pcs/reel MOQ: 1000 pcs, 1000 pcs/reel PACKAGE FORM Gullwing Reverse gullwing ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Acc. reflow solder profile fig. 8 Tamb 25 °C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW °C °C °C °C K/W Rev. 1.3, 10-Aug-11 1 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81170 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104S, VBP104SR www.vishay.com Vishay Semiconductors TEST CONDITION IF = 50 mA IR = 100 μA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2,  = 950 nm Ee = 1 mW/cm2,  = 950 nm Ee = 1 mW/cm2,  = 950 nm Ee = 1 mW/cm2,  = 950 nm Ee = 1 mW/cm2,  = 950 nm, VR = 5 V SYMBOL VF V(BR) Iro CD CD Vo TKVo Ik TKIk Ira  p 0.1 VR = 10 V,  = 950 nm VR = 10 V, RL = 1 k,  = 820 nm VR = 10 V, RL = 1 k,  = 820 nm NEP tr tf 25 60 2 48 17 350 - 2.6 32 0.1 35 ± 65 940 430 to 1100 4 x 10-14 100 100 40 30 MIN. TYP. 1 MAX. 1.3 UNIT V V nA pF pF mV mV/K μA %/K μA deg nm nm W/Hz ns ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I ra rel - Relative Reverse Light Current 1000 Iro - Reverse Dark Current (nA) 1.4 1.2 100 VR = 5 V λ = 950 nm 1.0 10 0.8 VR = 10 V 1 20 40 60 80 100 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 8403 Tamb - Ambient Temperature (°C) 94 8409 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.3, 10-Aug-11 2 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81170 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104S, VBP104SR www.vishay.com Vishay Semiconductors 1000 S(λ)rel - Relative Spectral Sensitivity 10 Ira - Reverse Light Current (µA) 1.0 0.8 0.6 0.4 0.2 0 100 10 1 VR = 5 V λ = 950 nm 0.1 0.01 94 8421 0.1 1 350 94 8420 550 750 950 1150 Ee - Irradiance (mW/cm2) λ - Wavelength (nm) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 100 Ira - Reverse Light Current (µA) 0° 10° 20° 30° 0.5 mW/cm2 10 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 mW/cm2 0.1 mW/cm 2 0.05 mW/cm2 1 0.1 1 10 100 94 8422 VR - Reverse Voltage (V) 94 8406 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 80 CD - Diode Capacitance (pF) 60 E=0 f = 1 MHz 40 20 0 0.1 94 8423 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.3, 10-Aug-11 3 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81170 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ϕ - Angular Displacement 1 mW/cm2 Srel - Relative Radiant Sensitivity λ = 950 nm VBP104S, VBP104SR www.vishay.com PACKAGE DIMENSIONS FOR VBP104S in millimeters 0.75 ± 0.05 (0.47 ref.) 0.1 - 0.1 Flat area 0.3 min. 4.4 ± 0.1 2.2 0.18 ± 0.2 Chip Size 2.4 x 2.4 1.95 1.6 ± 0.1 0.8 ± 0.1 1 ± 0.15 6.4 ± 0.3 technical drawings according to DIN specifications Vishay Semiconductors 1.2 ± 0.1 Anode Cathode 0.15 ± 0.02 Recommended solder pad 8.9 5.4 Drawing-No.: 6.541-5088.01-4 Issue: 1; 15.04.10 22107 Rev. 1.3, 10-Aug-11 1.8 4 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81170 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3.9 ± 0.1 VBP104S, VBP104SR www.vishay.com PACKAGE DIMENSIONS FOR VBP104SR in millimeters Vishay Semiconductors 0.75 ± 0.05 1.2 ± 0.1 0.15 ± 0.02 4.4 ± 0.1 2.2 0.18 ± 0.2 Chip Size 2.4 x 2.4 1.6 ± 0.1 1.95 (0.47 ref.) 6.4 ± 0.3 8.9 5.4 Flat area 0.3 min. 0.1 min. Anode Cathode 0.8 ± 0.1 1 ± 0.15 technical drawings according to DIN specifications Recommended solder pad Drawing-No.: 6.541-5087.01-4 Issue: 1; 15.04.10 22106 Rev. 1.3, 10-Aug-11 1.8 5 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81170 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 3.9 ± 0.1 VBP104S, VBP104SR www.vishay.com TAPING DIMENSIONS FOR VBP104S in millimeters Vishay Semiconductors 21730 TAPING DIMENSIONS FOR VBP104SR in millimeters 21731 Rev. 1.3, 10-Aug-11 6 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81170 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBP104S, VBP104SR www.vishay.com REEL DIMENSIONS FOR VBP104S AND VBP104SR in millimeters Vishay Semiconductors 21732 SOLDER PROFILE DRYPACK 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions: 192 h at 40 °C (+ 5 °C), RH < 5 % or 96 h at 60 °C (+ 5 °C), RH < 5 %. 19841 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Rev. 1.3, 10-Aug-11 7 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81170 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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