VEMT4700-GS18

VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times 94 8554 • Angle of half sensitivity: ϕ = ± 60° • Base terminal connected • Package notch indicates collector • Package matched with IR emitter series VSML3710 DESCRIPTION VEMT4700 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-3 package for surface mounting on printed boards. The device is sensitive to visible and near infrared radiation. • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors • Light sensors PRODUCT SUMMARY COMPONENT VEMT4700 Note Test conditions see table “Basic Characteristics” Ica (mA) 0.5 ϕ (deg) ± 60 λ0.1 (nm) 450 to 1080 ORDERING INFORMATION ORDERING CODE VEMT4700-GS08 VEMT4700-GS18 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-3 PLCC-3 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation tp/T ≤ 0.1, tp ≤ 10 µs TEST CONDITION SYMBOL VCEO VECO IC ICM PV VALUE 70 5 50 100 100 UNIT V V mA mA mW Document Number: 81501 Rev. 1.3, 04-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 531 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant ABSOLUTE MAXIMUM RATINGS PARAMETER Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Acc. reflow solder profile fig. 10 Soldered on PCB with pad dimensions: 4 mm x 4 mm TEST CONDITION SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 100 - 40 to + 100 260 400 UNIT °C °C °C °C K/W 125 PV - Power Dissipation Limit (mW) R thJA = 400 K/W 100 75 50 25 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 20376 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Collector light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 1 kΩ VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 100 Ω VS = 5 V, IC = 2 mA, RL = 100 Ω TEST CONDITION I C = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V SYMBOL V(BR)CEO ICEO CCEO Ica ϕ λp λ0.1 VCEsat tr/tf tr/tf fc 0.25 MIN. 70 1 3 0.5 ± 60 850 450 to 1080 0.15 6 2 180 0.3 200 TYP. MAX. UNIT V nA pF mA deg nm nm V µs µs kHz Rise time, fall time Cut-off frequency Note Tamb = 25 °C, unless otherwise specified www.vishay.com 532 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81501 Rev. 1.3, 04-Sep-08 VEMT4700 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 104 ICEO - Collector Dark Current (nA) I ca - Collector Light Current (mA) 10 103 VCE = 20 V 102 λ = 950 nm 1 Ee = 1 mW/cm² 0.5 mW/cm² 0.2 mW/cm² 101 10 94 8304 0.1 20 40 60 80 100 94 8317 0.1 1 10 100 Tamb - Ambient Temperature (°C) VCE - Collector Emitter Voltage (V) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Ica rel - Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm CCEO - Collector Emitter Capacitance (pF) 2.0 10 f = 1 MHz 8 6 4 2 0 0.1 1 10 100 94 8239 Tamb - Ambient Temperature (°C) 94 8294 VCE - Collector Emitter Voltage (V) Fig. 3 - Relative Collector Current vs. Ambient Temperature Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage 10 8 ton/toff - Turn-on/Turn-off Time (µs) VCE = 5 V RL = 100 Ω λ = 950 nm Ica - Collector Light Current (mA) 1 6 0.1 4 toff 2 ton 0 0 2 4 6 8 10 12 14 0.01 V CE = 5 V λ = 950 nm 0.001 0.01 94 8316 0.1 1 10 E e - Irradiance (mW/cm²) 94 8293 IC - Collector Current (mA) Fig. 4 - Collector Light Current vs. Irradiance Fig. 7 - Turn-on/Turn-off Time vs. Collector Current Document Number: 81501 Rev. 1.3, 04-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 533 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 0° 10° 20° 30° S (λ)rel - Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 400 600 800 1000 94 8318 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 94 8348 λ - Wavelength (nm) Fig. 8 - Relative Spectral Sensitivity vs. Wavelength Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters Mounting Pad Layout 2.6 (2.8) 1.2 area covered with solder resist 4 1.6 (1.9) Dimensions: IR and vaporphase (wave soldering) 21439 4 www.vishay.com 534 For technical questions, contact: detectortechsupport@vishay.com 0.5 Document Number: 81501 Rev. 1.3, 04-Sep-08 ϕ - Angular Displacement Srel - Relative Sensitivity VEMT4700 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors SOLDER PROFILE 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C 5.75 5.25 4.0 3.6 8.3 7.7 3.5 3.1 2.2 2.0 Temperature (°C) 200 max. 30 s 150 max. 120 s 100 1.6 1.4 3.6 3.4 1.85 1.65 max. 100 s 4.1 3.9 2.05 1.95 50 0 0 19841 max. ramp up 3 °C/s max. ramp down 6 °C/s 4.1 3.9 0.25 94 8668 50 100 150 200 250 300 Time (s) Fig. 12 - Tape Dimensions in mm for PLCC-3 Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. 94 8158 > 160 mm 40 empty compartments min. 75 empty compartments DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Tape leader Carrier leader Carrier trailer Fig. 13 - Beginning and End of Reel TAPE AND REEL PLCC-3 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Adhesive tape Blister tape Component cavity 94 8670 Fig. 11 - Blister Tape Document Number: 81501 Rev. 1.3, 04-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 535 VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. 63.5 60.5 120° 10.0 9.0 4.5 3.5 2.5 1.5 Identification Label: Vishay type group tape code production code quantity 13.00 12.75 180 178 14.4 max. 94 8665 Fig. 14 - Dimensions of Reel-GS08 120° 10.4 8.4 4.5 3.5 2.5 1.5 Identification Label: Vishay type group tape code production code quantity 13.00 12.75 62.5 60.0 321 329 14.4 max. 18857 Fig. 15 - Dimensions of Reel-GS18 www.vishay.com 536 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81501 Rev. 1.3, 04-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1