VEMT4700F

VEMT4700F Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • High radiant sensitivity • Fast response times • Daylight blocking filter matched with 870 nm to 950 nm emitters • Angle of half sensitivity: ϕ = ± 60° 21675 • Base terminal connected • Package notch indicates collector • Package matched with IR emitter series VSML3710 • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION VEMT4700F is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-3 package. The integrated daylight blocking filter is matched to 950 nm IR emitters. APPLICATIONS • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors PRODUCT SUMMARY COMPONENT VEMT4700F Ica (mA) 0.5 ϕ (deg) ± 60 λ0.5 (nm) 870 to 1050 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VEMT4700F-GS08 VEMT4700F-GS18 Note • MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-3 PLCC-3 ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81120 Rev. 1.1, 14-Jul-10 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 1 VEMT4700F Vishay Semiconductors Silicon NPN Phototransistor ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Acc. reflow solder profile fig. 10 Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm tp/T ≤ 0.1, tp ≤ 10 μs TEST CONDITION SYMBOL VCEO VECO IC ICM PV Tj Tamb Tstg Tsd RthJA VALUE 70 5 50 100 100 100 - 40 to + 100 - 40 to + 100 260 400 UNIT V V mA mA mW °C °C °C °C K/W 125 PV - Power Dissipation Limit (mW) R thJA = 400 K/W 100 75 50 25 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 20376 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Collector ligth current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 1 kΩ VS = 5 V, IC = 1 mA, λ = 950 nm, RL = 100 Ω VS = 5 V, IC = 2 mA, RL = 100 Ω TEST CONDITION IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V SYMBOL V(BR)CEO ICEO CCEO Ica ϕ λp λ0.5 VCEsat tr/tf tr/tf fc 0.25 MIN. 70 1 3 0.5 ± 60 940 870 to 1050 0.15 6 2 180 0.3 200 TYP. MAX. UNIT V nA pF mA deg nm nm V μs μs kHz Rise time, fall time Cut-off frequency www.vishay.com 2 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81120 Rev. 1.1, 14-Jul-10 VEMT4700F Silicon NPN Phototransistor BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Vishay Semiconductors 104 ICEO - Collector Dark Current (nA) Ica - Collector Light Current (mA) 10 103 VCE = 20 V λ = 950 nm 102 1 Ee = 1 mW/cm2 101 0.5 mW/cm2 0.2 mW/cm2 0.1 0.1 1 10 100 10 94 8304 20 40 60 80 100 94 8317 Tamb - Ambient Temperature (°C) VCE - Collector Emitter Voltage (V) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 5 - Collector Light Current vs. Collector Emitter Voltage 2.0 CCEO - Collector Emitter Capacitance (pF) 10 f = 1 MHz 8 Ica rel - Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 6 4 2 0 0.1 1 10 100 94 8239 Tamb - Ambient Temperature (°C) 94 8294 VCE - Collector Emitter Voltage (V) Fig. 3 - Relative Collector Current vs. Ambient Temperature Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage 10 8 ton/toff - Turn-on/Turn-off Time (µs) Ica - Collector Light Current (mA) 1 6 VCE = 5 V RL = 100 Ω λ = 950 nm 0.1 4 0.01 VCE = 5 V λ = 950 nm toff 2 ton 0 0.001 0.01 94 8316 0.1 1 10 94 8293 0 2 4 6 8 10 12 14 Ee - Irradiance (mW/cm²) IC - Collector Current (mA) Fig. 4 - Collector Light Current vs. Irradiance Fig. 7 - Turn-on/Turn-off Time vs. Collector Current Document Number: 81120 Rev. 1.1, 14-Jul-10 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 3 VEMT4700F Vishay Semiconductors Silicon NPN Phototransistor S (λ)rel - Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0 750 0° 10° 20° 30° 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 850 950 1050 1150 94 8318 0.6 0.4 0.2 0 94 8408 λ - Wavelength (nm) Fig. 8 - Relative Spectral Sensitivity vs. Wavelength Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters Mounting Pad Layout 2.6 (2.8) 1.2 area covered with solder resist 4 1.6 (1.9) Dimensions: IR and vaporphase (wave soldering) 21439 SOLDER PROFILE 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Document Number: 81120 Rev. 1.1, 14-Jul-10 Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 www.vishay.com 4 For technical questions, contact: detectortechsupport@vishay.com 4 0.5 ϕ - Angular Displacement Srel - Relative Sensitivity VEMT4700F Silicon NPN Phototransistor TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. Vishay Semiconductors component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. 120° 10.0 9.0 Adhesive tape 4.5 3.5 2.5 1.5 Blister tape 13.00 12.75 63.5 60.5 Component cavity 94 8670 Identification Label: Vishay type group tape code production code quantity 180 178 14.4 max. 94 8665 Fig. 11 - Blister Tape Fig. 14 - Dimensions of Reel-GS08 3.5 3.1 2.2 2.0 120° 5.75 5.25 3.6 3.4 1.85 1.65 10.4 8.4 4.0 3.6 8.3 7.7 4.5 3.5 2.5 1.5 Identification Label: Vishay type group tape code production code quantity 13.00 12.75 62.5 60.0 1.6 1.4 4.1 3.9 2.05 1.95 4.1 3.9 0.25 94 8668 Fig. 12 - Tape Dimensions in mm for PLCC-2 321 329 14.4 max. 18857 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. Fig. 15 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. De-reeling direction 94 8158 > 160 mm 40 empty compartments min. 75 empty compartments Tape leader Carrier leader Carrier trailer Fig. 13 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least Document Number: 81120 Rev. 1.1, 14-Jul-10 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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