VN0808LS

VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN0808L VN0808LS VQ1006P 80 90 V(BR)DSS Min (V) rDS(on) Max (W) 4 @ VGS = 10 V 4 @ VGS = 10 V 4 @ VGS = 10 V VGS(th) (V) 0.8 to 2 0.8 to 2 0.8 to 2.5 ID (A) 0.3 0.33 0.4 FEATURES D D D D D Low On-Resistance: 3.6 W Low Threshold: 1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 6 ns Low Input and Output Leakage TO-226AA (TO-92) BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-92S S 1 APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Dual-In-Line D1 N S1 G1 NC D4 S4 G4 NC G3 S3 D3 N N 1 2 3 4 5 6 7 14 13 12 11 10 9 8 S 1 G 2 G 2 D 3 N D 3 Top View Top View VN0808L VN0808LS G2 S2 D2 Front View: VN0808LS “S” VN 0808LS xxyy “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code Top View Sidebraze: VQ1006P Front View: VN0808L “S” VN 0808L xxyy Top View: VQ1006P VQ1006P “S”f//xxyy ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) VQ1006P Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70214 S-04279—Rev.D, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg VN0808L 80 "30 0.3 0.19 1.9 0.8 0.32 156 VN0808LS 80 "30 0.33 0.21 1.9 0.9 0.4 139 Single 90 "20 0.4 0.23 2 1.3 0.52 96 Total Quad Unit V A 2 0.8 62.5 W _C/W _C –55 to 150 11-1 VN0808L/LS, VQ1006P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VN0808L/LS VQ1006P Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol Test Conditions Typa Min Max Min Max Unit V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "15 V TJ = 125_C VDS = 80 V, VGS = 0 V TJ = 125_C 125 1.6 80 0.8 2 "100 90 V 0.8 2.5 "100 "500 10 500 1 500 mA nA Zero Gate Voltage Drain Current IDSS VDS = 72 V, VGS = 0 V TJ = 125_C On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V VGS = 5 V, ID = 0.3 A 1.8 3.8 3.6 6.7 350 0.23 1.5 1.5 5 4 8 4.5 8.6 170 A Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 1 A TJ = 125_C W Forward Transconductanceb gfs gos VDS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.1 A 170 Common Source Output Conductanceb mS Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 35 15 2 50 40 10 60 50 10 pF Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W 6 8 10 10 10 ns 10 VNDQ09 Notes a. For DESIGN AID ONLY, not subject to production testing.. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70214 S-04279—Rev.D, 16-Jul-01 VN0808L/LS, VQ1006P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 1.0 VGS = 10 V 6V 0.8 ID – Drain Current (mA) 5V 0.6 ID – Drain Current (mA) 60 80 100 Output Characteristics for Low Gate Drive VGS = 3 V 2.8 V 2.6 V 4V 2.4 V 0.4 3V 0.2 2V 0 0 1.0 2.0 3.0 4.0 5.0 VDS – Drain-to-Source Voltage (V) 40 2.2 V 20 2.0 V 1.8 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) Transfer Characteristics 0.5 TJ = –55_C 0.4 ID – Drain Current (A) 125_C 6 rDS(on) – On-Resistance ( Ω ) 25_C 5 4 3 2 1 0 0 2 4 6 8 10 VGS – Gate-Source Voltage (V) 0 0 7 On-Resistance vs. Gate-to-Source Voltage 0.3 ID = 0.1 A 0.5 A 1.0 A 0.2 VDS = 15 V 0.1 4 8 12 16 20 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current 10 rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 2.25 Normalized On-Resistance vs. Junction Temperature VGS = 10 V 2.00 1.75 1.50 1.25 1.00 0.75 0.50 8 6 VGS = 10 V 4 2 0 0 0.5 1.0 1.5 2.0 2.5 –50 –10 30 70 110 150 ID – Drain Current (A) TJ – Junction Temperature (_C) Document Number: 70214 S-04279—Rev.D, 16-Jul-01 www.vishay.com 11-3 VN0808L/LS, VQ1006P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 VDS = 5 V 100 ID – Drain Current (mA) 1 TJ = 150_C C – Capacitance (pF) 125 VGS = 0 V f = 1 MHz Capacitance 75 50 C oss C rss 0 0.1 C iss 125_C 25_C –55_C 25 0.01 0.5 1.0 1.5 2.0 0 10 20 30 40 50 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Gate Charge 15.0 I D = 1.0 A VGS – Gate-to-Source Voltage (V) 12.5 t – Switching Time (ns) 100 Load Condition Effects on Switching VDD = 25 V RL = 23 W VGS = 0 to 10 V ID = 1.0 A 10.0 VDS = 45 V 7.5 72 V 5.0 10 td(off) tr 2.5 td(on) tf 1 0 100 200 300 400 500 0.1 ID – Drain Current (A) 1 2 Qg – Total Gate Charge (pC) 0 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 1 10 100 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70214 S-04279—Rev.D, 16-Jul-01