VSKT250-04

VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A FEATURES • High voltage • Electrically isolated base plate • 3500 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL approved file E78996 MAGN-A-PAK • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION This new VSK series of MAGN-A-PAK modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. PRODUCT SUMMARY IT(AV) 170 A/250 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) IT(RMS) ITSM I2t I2t VDRM/VRRM TJ Range 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS 85 °C VSK.170.. 170 377 5100 5350 131 119 1310 Up to 1600 - 40 to 130 VSK.250.. 250 555 8500 8900 361 330 3610 Up to 2000 kA2s kA2s V °C A UNITS Document Number: 94417 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 08 VSK.17010 12 14 16 04 08 10 VSK.25012 14 16 18 20 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V 400 800 1000 1200 1400 1600 400 800 1000 1200 1400 1600 1800 2000 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1100 1300 1500 1700 500 900 1100 1300 1500 1700 1900 2100 60 50 50 IRRM/IDRM AT 130 °C MAXIMUM mA ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave As AC switch t = 10 ms Maximum peak, one-cycle on-state non-repetitive, surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum VSK.170 170 85 377 5100 5350 4300 4500 131 119 92.5 84.4 1310 0.89 1.12 1.34 0.96 1.60 500 1000 VSK.250 250 85 555 8500 8900 7150 7500 361 330 255 233 3610 0.97 1.00 0.60 0.57 1.44 500 1000 mA V m kA2s V kA2s A UNITS A °C t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum (I >  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum ITM =  x IT(AV), TJ = TJ maximum, 180° conduction, average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C Anode supply = 12 V, resistive load = 1 , gate pulse: 10 V, 100 μs, TJ = 25 °C Low level value or threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum holding current Maximum latching current www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94417 Revision: 02-Jul-10 VSK.170PbF, VSK.250PbF Series SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 170 A/250 A SWITCHING PARAMETER Typical delay time Typical rise time Typical turn-off time SYMBOL td tr tq TEST CONDITIONS TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs Vd = 0.67 % VDRM ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100  VSK.170 VSK.250 UNITS 1.0 2.0 50 to 150 μs BLOCKING PARAMETER Maximum peak reverse and off-state leakage current RMS insulation voltage Critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt TEST CONDITIONS TJ = TJ maximum 50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s TJ = TJ maximum, exponential to 67 % rated VDRM VSK.170 50 3000 1000 VSK.250 60 UNITS mA V V/μs TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger SYMBOL PGM PG(AV) + IGM - VGT VGT TEST CONDITIONS tp  5 ms, TJ = TJ maximum f = 50 Hz, TJ = TJ maximum tp  5 ms, TJ = TJ maximum tp  5 ms, TJ = TJ maximum TJ = - 40 °C TJ = 25 °C TJ = TJ maximum TJ = - 40 °C Maximum required DC gate current to trigger Maximum gate voltage that will not trigger Maximum gate current that willnot trigger Maximum rate of rise of turned-on current IGT VGD IGD dI/dt TJ = 25 °C TJ = TJ maximum TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, ITM = 400 A, rated VDRM applied Anode supply = 12 V, resistive load; Ra = 1  Anode supply = 12 V, resistive load; Ra = 1  VSK.170 VSK.250 UNITS W A 10.0 2.0 3.0 5.0 4.0 3.0 2.0 350 200 100 0.25 10.0 500 V mA A/μs mA V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction operating and storage temperature range Maximum thermal resistance, junction to case per junction Typical thermal resistance, case to heatsink per module MAP to heatsink Mounting torque ± 10 % busbar to MAP Approximate weight Case style SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. TEST CONDITIONS VSK.170 VSK.250 UNITS °C - 40 to 130 0.17 0.02 0.125 K/W 0.02 4 to 6 Nm 500 17.8 MAGN-A-PAK g oz. Document Number: 94417 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A R CONDUCTION PER JUNCTION DEVICES VSK.170VSK.250SINUSOIDAL CONDUCTION AT TJ MAXIMUM 180° 0.009 0.009 120° 0.010 0.010 90° 0.010 0.014 60° 0.020 0.020 30° 0.032 0.032 RECTANGULAR CONDUCTION AT TJ MAXIMUM 180° 0.007 0.007 120° 0.011 0.011 90° 0.015 0.015 60° 0.020 0.020 30° 0.033 0.033 UNITS K/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Maximum Allowable Case Temperature (°C) 120 110 100 90 80 70 60 0 40 VSK.170.. Series RthJC (DC) = 0.17 K/W Maximum Average On-state Power Loss (W) 130 300 250 200 150 100 50 0 0 40 80 120 160 200 Average On-state Current (A) 180° 120° 90° 60° 30° Conduction Angle RMS Limit 30° Conduction Angle 60° 90° 120° 180° 80 120 160 200 VSK.170.. Series Per Junction TJ = 125°C Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics Maximum Allowable Case Temperature (°C) 120 110 100 90 30° 80 70 60 0 50 100 VSK.170.. Series R thJC (DC) = 0.17 K/W Maximum Average On-state Power Loss (W) 130 350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 Average On-state Current (A) Conduction Period DC 180° 120° 90° 60° 30° RMS Limit Conduction Period 60° 90° 120° 180° DC 250 300 VSK.170.. Series Per Junction TJ = 125°C 150 200 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94417 Revision: 02-Jul-10 VSK.170PbF, VSK.250PbF Series SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 170 A/250 A Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 5000 4500 4000 3500 3000 2500 2000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) 5000 4500 4000 3500 3000 2500 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 130°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 130°C No Voltage Reapplied Rated VRRM Reapplied VSK.170.. Series Per Junction VSK.170.. Series Per Junction 0.1 Pulse Train Duration (s) 2000 0.01 1 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Maximum Total On-state Power Loss (W) 400 350 180° 120° 90° 60° 30° 0. 25 0. 3 0. 2 K/ W 16 0. W K/ 0.1 2 W K/ A R th S 8 0. 0 W K/ 300 250 200 Conduction Angle 150 100 50 0 0 50 K/ W K/ W =0 .04 K/ W 0.3 5 -D K/W e lt aR VSK.170.. Series Per Module TJ = 130°C 100 150 200 250 300 350 400 0 Total RMS Output Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient Temperature (°C) Fig. 7 - On-State Power Loss Characteristics 1000 Maximum Total Power Loss (W) S R th 0. 900 800 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 0 350 2 x VSK.170.. Series Single Phase Bridge Connected TJ = 130°C 180° (Sine) 180° (Rect) 0. 1 0.1 04 0. 08 06 0. W K/ A K/ W K/ W . 02 =0 W K/ W K/ 0. 1 6 0 .2 2K /W -D K/ W e lt a 0. 2 5K /W K/ W R 0.35 K/ W 20 40 60 80 100 120 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 8 - On-State Power Loss Characteristics Document Number: 94417 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VSK.170PbF, VSK.250PbF Series Vishay Semiconductors 1600 =0 SA R th SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A Maximum Total Power Loss (W) 1400 1200 1000 800 600 0.0 0. 05 03 0. K/ W W K/ .01 120° (Rect) 8K /W W K/ el t -D 400 200 0 0 100 200 3 x VSK.170.. Series Three Phase Bridge Connected TJ = 130°C 300 400 K/ W 0. 1 2K /W 0. 1 6 K/ W 0.25 K/ W 0. 1 aR 500 0 20 40 60 80 100 120 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 9 - On-State Power Loss Characteristics Maximum Allowable Case Temperature (°C) 120 110 100 90 VSK.250.. Series RthJC(DC) = 0.125 K/W Maximum Average On-state Power Loss (W) 130 350 300 250 200 150 100 50 0 0 50 100 150 200 250 Average On-state Current (A) Conduction Angle 180° 120° 90° 60° 30° RMS Limit Conduction Angle 30° 80 70 60 0 50 100 150 200 250 300 Average On-state Current (A) 60° 90° 120° 180° VSK.250.. Series Per Junction TJ = 130°C Fig. 10 - Current Ratings Characteristics Fig. 12 - On-State Power Loss Characteristics Maximum Allowable Case Temperature (°C) 120 110 100 90 80 70 60 0 100 VSK.250.. Series RthJC (DC) = 0.125 K/W Maximum Average On-state Power Loss (W) 130 500 450 400 350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 350 400 Average On-state Current (A) RMS Limit Conduction Period Conduction Period DC 180° 120° 90° 60° 30° 30° 60° 90° 120° 180° 200 300 DC 400 500 VSK.250.. Series Per Junction TJ = 130°C Average On-state Current (A) Fig. 11 - Current Ratings Characteristics Fig. 13 - On-State Power Loss Characteristics www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94417 Revision: 02-Jul-10 VSK.170PbF, VSK.250PbF Series SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 170 A/250 A Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 7500 7000 6500 6000 5500 5000 4500 4000 3500 1 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 130°C 9000 8000 7000 6000 5000 4000 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 130°C No Voltage Reapplied Rated VRRM Reapplied VSK.250.. Series Per Junction 10 100 VSK.250.. Series Per Junction 0.1 Pulse Train Duration (s) 1 3000 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current Maximum Total On-state Power Loss (W) 700 0.0 S R th 600 500 Conduction angle 180° 120° 90° 60° 30° 0. 12 0. 08 W K/ K/ W /W 5K A =0 0. .02 16 K/ W W K/ 0.2 0 -D 400 300 200 100 0 0 100 200 300 400 500 VSK.250.. Series Per Module TJ = 130°C K/ W 0.2 5K /W e lt a R 0.3 K/ W 0 600 20 40 60 80 100 120 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 16 - On-State Power Loss Characteristics 1400 0.0 Maximum Total Power Loss (W) 1200 1000 0. 05 0.0 6 0. 04 Rt 0. 03 /W 2K W K/ A hS K/ W K/ W K/ W =0 . 01 W K/ 800 600 180° (Sine) 180° (Rect) -D e lt aR 0 .1 0.1 K/ W 2K /W 0 .16 K/ W 400 200 0 0 100 200 2 x VSK.250.. Series Single Phase Bridge Connected TJ = 130°C 300 400 0 .3 K /W 500 0 20 40 60 80 100 120 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 17 - On-State Power Loss Characteristics Document Number: 94417 Revision: 02-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 VSK.170PbF, VSK.250PbF Series Vishay Semiconductors SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A 2000 Maximum Total Power Loss (W) 1800 0. 0. 06 0. 04 W K/ K/ W 05 03 0. W K/ R th SA 1600 1400 1200 =0 120° (Rect) K/ W 0 .0 8K /W .01 K/ W 1000 800 600 400 200 0 3 x VSK.250.. Series Three Phase Bridge Connected TJ = 130°C 0 100 200 300 400 500 600 0.1 K/ W 0. 1 2K /W 0.1 6K /W 0.2 0K /W 0.25 K/ W -D e lt aR 700 0 20 40 60 80 100 120 Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 18 - On-State Power Loss Characteristics Typical Reverse Recovery Charge - Qrr (µC) 10000 Instantaneous Forward Current (V) 1800 1600 1400 1200 1000 800 600 400 200 0 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) VSK.170.. Series TJ = 130 °C Per Junction ITM = 800 A Tj = 25°C Tj = 130°C 500 A 300 A 200 A 100 A 50 A 1000 VSK.170 Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous Forward Voltage (V) 5 Fig. 19 - On-State Voltage Drop Characteristics Fig. 21 - Reverse Recovery Charge Characteristics Typical Reverse Recovery Charge - Qrr (µC) 10000 Instantaneous Forward Current (V) 2400 VSK.250.. Series 2200 TT == 30 °C°C JJ 1 130 Per Junction 2000 Per Junction 1800 1600 1400 1200 1000 800 600 400 200 0 ITM = 800 A 500 A 300 A 200 A 100 A 50 A Tj = 25°C Tj = 130°C 1000 VSK.250 Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Instantaneous Forward Voltage (V) 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 20 - On-State Voltage Drop Characteristics Fig. 22 - Reverse Recovery Charge Characteristics www.vishay.com 8 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94417 Revision: 02-Jul-10 VSK.170PbF, VSK.250PbF Series SCR/SCR and SCR/Diode Vishay Semiconductors (MAGN-A-PAK Power Modules), 170 A/250 A 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 ohms; tr < =1µs b) Recommended load line for