VSKT91-08

VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A FEATURES • High voltage • Industrial standard package • Low thermal resistance • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level ADD-A-PAK BENEFITS • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate 95 A PRODUCT SUMMARY IT(AV) or IF(AV) • Up to 1600 V • High surge capability MECHANICAL DESCRIPTION The ADD-A-PAK Generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. • Easy mounting on heatsink ELECTRICAL DESCRIPTION These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IT(AV) or IF(AV) IO(RMS) ITSM, IFSM I2t I2√t VRRM TStg TJ Range CHARACTERISTICS 85 °C As AC switch 50 Hz 60 Hz 50 Hz 60 Hz VALUES 95 210 2000 2094 20 18.26 200 400 to 1600 - 40 to 125 kA2s kA2√s V °C A UNITS Document Number: 94632 Revision: 17-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 04 06 08 VSK.91 10 12 14 16 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 600 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 700 900 1100 1300 1500 1700 VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 400 600 800 1000 1200 1400 1600 15 IRRM, IDRM AT 125 °C mA ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A ON-STATE CONDUCTION PARAMETER Maximum average on-state current (thyristors) Maximum average forward current (diodes) Maximum continuous RMS on-state current, as AC switch SYMBOL IT(AV) IF(AV) IO(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Maximum value or threshold voltage Maximum value of on-state slope resistance Maximum peak on-state or forward voltage Maximum non-repetitive rate of rise of turned on current Maximum holding current Maximum latching current Notes (1) I2t for time t = I2√t x √t x x (2) Average power = V 2 T(TO) x IT(AV) + rt x (IT(RMS)) (3) 16.7 % x π x I AV < I < π x IAV (4) I > π x I AV I2√t (1) VT(TO) (2) rt (2) VTM VFM dI/dt IH IL TEST CONDITIONS 180° conduction, half sine wave, TC = 85 °C or VALUES 95 UNITS I(RMS) I(RMS) 210 A 2000 No voltage reapplied 100 % VRRM reapplied No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 2094 1682 1760 20 Initial TJ = TJ maximum 100 % VRRM reapplied 18.26 14.14 12.91 200 0.97 1.1 2.76 2.38 1.73 150 250 400 kA2s t = 0.1 ms to 10 ms, no voltage reapplied TJ = TJ maximum Low level (3) High level (4) kA2√s V mΩ V A/μs TJ = TJ maximum TJ = TJ maximum TJ = 25 °C Low level (3) High level (4) ITM = π x IT(AV) IFM = π x IF(AV) TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit TJ = 25 °C, anode supply = 6 V, resistive load mA www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94632 Revision: 17-May-10 VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 95 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM - VGM TJ = - 40 °C Maximum gate voltage required to trigger VGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C Maximum gate current required to trigger IGT VGD IGD TJ = 25 °C TJ = 125 °C Maximum gate voltage that will not trigger Maximum gate current that will not trigger TJ = 125 °C, rated VDRM applied TJ = 125 °C, rated VDRM applied Anode supply = 6 V resistive load Anode supply = 6 V resistive load TEST CONDITIONS VALUES 12 3.0 3.0 10 4.0 2.5 1.7 270 150 80 0.25 6 V mA mA V UNITS W A BLOCKING PARAMETER Maximum peak reverse and off-state leakage current at VRRM, VDRM Maximum RMS insulation voltage Maximum critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt TEST CONDITIONS TJ = 125 °C, gate open circuit 50 Hz TJ = 125 °C, linear to 0.67 VDRM VALUES 15 3000 (1 min) 3600 (1 s) 1000 UNITS mA V V/μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction operating and storage temperature range Maximum internal thermal resistance, junction to case per leg Typical thermal resistance, case to heatsink per module to heatsink Mounting torque ± 10 % busbar Approximate weight Case style JEDEC SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. TEST CONDITIONS VALUES - 40 to 125 0.22 °C/W 0.1 4 Nm 3 75 2.7 g oz. UNITS °C TO-240AA compatible ΔR CONDUCTION PER JUNCTION DEVICES VSK.91.. SINE HALF WAVE CONDUCTION 180° 0.04 120° 0.048 90° 0.063 60° 0.085 30° 0.125 180° 0.033 RECTANGULAR WAVE CONDUCTION 120° 0.052 90° 0.067 60° 0.088 30° 0.127 UNITS °C/W Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94632 Revision: 17-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series Vishay Semiconductors 130 RthJC (DC) = 0.22°C/W ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A Maximum average on-state power loss (W) Maximum allowable case temperature (°C) 220 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Average on-state current (A) Per leg, Tj = 125°C 120 110 100 90 80 70 0 20 40 60 80 100 Average on-state current (A) 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° DC RMS limit Fig. 1 - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum allowable case temperature (°C) 130 120 110 100 90 80 70 0 20 40 60 80 100 120 140 160 Average on-state current (A) DC 180° 120° 90° 60° 30° 1800 Peak half sine wave on-state current (A) RthJC (DC) = 0.22°C/W 1600 At any rated load condition and with rated Vrrm applied following surge Initial Tj = Tj max @ 60 Hz 0.0083 s @ 50 Hz 0.0100s 1400 1200 1000 Per leg 800 1 10 100 Number of equal amplitude half cycle current pulses (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum average on-state power loss (W) 160 Peak half sine wave on-state current (A) 2000 180° 120° 90° 60° 30° 140 120 100 80 60 40 20 0 0 1800 1600 1400 1200 1000 RMS limit Maximum Non-repetitive Surge Current Versus Pulse Train Duration. Control of conduction may not be maintained. Initial Tj = 125°C No Voltage Reapplied Rated Vrrm reapplied Per leg, Tj = 125°C 20 40 60 80 100 Per leg 800 0.01 0.1 Pulse train duration (s) 1 Average on-state current (A) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94632 Revision: 17-May-10 VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 95 A 400 Maximum total on-state power loss (W) RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 0.7 °C/W 1 °C/W 1.5 °C/W 3 °C/W 350 300 250 200 150 100 50 0 0 40 80 180° 120° 90° 60° 30° VSK.91 Series Per module Tj = 125°C 120 160 200 240 20 0 40 60 80 100 120 140 Total RMS output current (A) Maximum allowable ambient temperature (°C) Fig. 7 - On-State Power Loss Characteristics 700 Maximum total power loss (W) 600 500 400 300 200 100 0 0 50 ∼ 180° (sine) 180° (rect) RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 1 °C/W 2 °C/W 2 x VSK.91 Series single phase bridge connected Tj = 125°C 100 150 0 200 20 40 60 80 100 120 140 Total output current (A) Maximum allowable ambient temperature (°C) Fig. 8 - On-State Power Loss Characteristics 900 Maximum total power loss (W) 800 700 600 500 400 300 200 100 0 0 40 80 120 160 200 0 240 20 40 60 3 x VSK.91 Series three phase bridge connected Tj = 125°C RthSA = 0.1 °C/W 0.2 °C/W 0.3 °C/W 0.5 °C/W 1 °C/W 120° (rect) 80 100 120 140 Total output current (A) Maximum allowable ambient temperature (°C) Fig. 9 - On-State Power Loss Characteristics Document Number: 94632 Revision: 17-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A 1000 Instantaneous on-state current (A) Per leg 100 10 Tj = 125°C Tj = 25°C 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Instantaneous on-state voltage (V) Fig. 10 - On-State Voltage Drop Characteristics Transient thermal impedance Z thJC ( °C/W) 1 Steady state value RthJC = 0.22 °C/W (DC operation) 0.1 0.01 Per leg 0.001 0.001 0.01 0.1 Square wave pulse duration (s) 1 10 Fig. 11 - Thermal Impedance ZthJC Characteristics 100 Instantaneous gate voltage (V) Rec tangular ga te pulse a )R ecommend ed load line for ra ted di/ d t: 20 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b )R ecommend ed load line for = 6 µs (1) PGM = 200 W, tp = 300 µs (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) T = -40 °C J (b) T = 25 °C J T = 125 °C J 1 (4) (3) (2) (1) VGD IGD 0.1 0.001 IR VSK..91.. S K.71../ eries F requenc y Limited by PG(AV) 0.1 1 10 100 1000 0.01 Instantaneous gate current (A) Fig. 12 - Gate Characteristics www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94632 Revision: 17-May-10 VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series ADD-A-PAK Generation VII Power Modules Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 95 A ORDERING INFORMATION TABLE Device code VSK 1 1 2 3 4 - T 2 91 3 / 16 4 Module type Circuit configuration (see end of datasheet) Current code (95 A) Voltage code (see Voltage Ratings table) Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKT (1) VSKH ~ (1) VSKL ~ (1) VSKN ~ (1) - 1 1 1 1 2 + (2) 2 + (2) 2 + (2) 2 + (2) 3 45 76 45 3 3 76 45 3 (3) G1 K1 K2 G2 (4) (5) (7) (6) (3) G1 K1 (4) (5) (3) K2 G2 (7) (6) + (3) G1 K1 (4) (5) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95368 Document Number: 94632 Revision: 17-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Thyristor DIMENSIONS in millimeters (inches) Fast-on tab 2.8 x 0.8 (0.110 x 0.03) Viti M5 x 0.8 Screws M5 x 0.8 18 (0.7) REF. 6.7 ± 0.3 (0.26 ± 0.012) 15.5 ± 0.5 (0.6 ± 0.020) 80 ± 0.3 (3.15 ± 0.012) 22.6 ± 0.2 (0.89 ± 0.008) 2 3 76 45 15 ± 0.5 (0.59 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) 5.8 ± 0.25 (0.228 ± 0.010) 6.3 ± 0.2 (0.248 ± 0.008) 4 ± 0.2 (0.157 ± 0.008) 1 30 ± 1 (1.18 ± 0.039) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 29 ± 0.5 (1 ± 0.020) 24 ± 0.5 (1 ± 0.020) Document Number: 95368 Revision: 11-Nov-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1