VSMG2000X01

VSMG2000X01, VSMG2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH FEATURES VSMG2000X01 VSMG2020X01 21725-2 DESCRIPTION VSMG2000X01 series are infrared, 850 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). • • • • • • • • • • • • • • • Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 AEC-Q101 qualified Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 12° Low forward voltage Suitable for high pulse current operation Terminal configurations: gullwing or reserve gullwing Package matches with detector VEMD2000X01 series Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications APPLICATIONS • IrDA compatible data transmission • IR-illumination (CCTV) • Miniature light barrier • • • • Photointerrupters Optical switch Shaft encoders IR emitter source for proximity applications PRODUCT SUMMARY COMPONENT VSMG2000X01 VSMG2020X01 Ie (mW/sr) 40 40 ϕ (deg) ± 12 ± 12 λp (nm) 850 850 tr (ns) 20 20 Note Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE VSMG2000X01 VSMG2020X01 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ: 6000 pcs, 6000 pcs/reel PACKAGE FORM Reverse gullwing Gullwing ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Document Number: 85194 Rev. 1.0, 28-Jan-10 TEST CONDITION SYMBOL VR IF For technical questions, contact: emittertechsupport@vishay.com VALUE 5 100 UNIT V mA www.vishay.com 1 VSMG2000X01, VSMG2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH ABSOLUTE MAXIMUM RATINGS PARAMETER Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified 180 120 100 80 60 TEST CONDITION tp/T = 0.5, tp = 100 µs tp = 100 µs SYMBOL IFM IFSM PV Tj Tamb Tstg VALUE 200 1 170 100 - 40 to + 85 - 40 to + 100 260 250 UNIT mA A mW °C °C °C °C K/W Acc. figure 9, J-STD-020 J-STD-051, leads 7 mm, soldered on PCB Tsd RthJA PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21342 RthJA = 250 K/W IF - Forward Current (mA) RthJA = 250 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21341 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 30 mA IF = 30 mA IF = 30 mA IF = 100 mA, 20 % to 80 % IF = 100 mA, 20 % to 80 % IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 1 m A IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF TKVF TKVF IR CJ Ie Ie φe TKφe ϕ λp Δλ TKλp tr tf fc d 830 20 125 40 350 40 - 0.35 ± 12 850 35 0.25 20 20 23 1.5 870 60 MIN. 1.25 TYP. 1.45 2.3 - 1.8 - 1.1 10 MAX. 1.7 UNIT V V mV/K mV/K µA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 85194 Rev. 1.0, 28-Jan-10 VSMG2000X01, VSMG2020X01 High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, GaAlAs, DH BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 1.25 Φe, rel - Relative Radiant Power 1.0 IF - Forward Current (mA) 100 0.75 0.5 0.25 0 tp = 100 µs 10 tp/T = 0.001 1 0 18873_1 1 2 3 4 16972 800 850 900 VF - Forward Voltage (V) λ- Wavelength (nm) Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Power vs. Wavelength 0° 10° 20° 30° VF, rel - Relative Forward Voltage (%) 110 108 106 104 102 100 98 96 94 92 90 - 40 - 20 0 20 40 60 80 100 21550 Ie rel - Relative Radiant Intensity 40° 1.0 50° 0.9 60° 0.8 70° 0.7 0.6 0.4 0.2 0 80° IF = 100 mA IF = 10 mA tp = 20 ms IF = 1 mA 21443 Tamb - Ambient Temperature (°C) Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 1000 Ie - Radiant Intensity (mW/sr) tp = 100 µs tp/T= 0.001 100 10 1 10 21487 100 1000 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 85194 Rev. 1.0, 28-Jan-10 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 ϕ - Angular Displacement VSMG2000X01, VSMG2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH SOLDER PROFILE 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. DRYING Time (s) 19841 Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters: VSMG2000 0.4 Ø 1.8 ± 0.1 0.05 ± 0.1 Z 2.77 ± 0.2 1.6 2.2 2.2 5.8 ± 0.2 2.3 ± 0.2 exposed copper 0.3 0.19 Z 20:1 1.1 ± 0.1 0.5 2.3 ± 0.2 0.4 Cathode Pin ID Anode 1.7 0.75 Solder pad proposal acc. IPC 7351 technical drawings according to DIN specifications Not indicated tolerances ± 0.1 Ø 2.3 ± 0.1 6.7 Drawing-No.: 6.544-5391.02-4 Issue: 1; 26.09.08 21517 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 85194 Rev. 1.0, 28-Jan-10 0.254 VSMG2000X01, VSMG2020X01 High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, GaAlAs, DH PACKAGE DIMENSIONS in millimeters: VSMG2020 0.4 Ø 1.8 2.77 ± 0.2 X 1.6 0.05 2.2 0.19 2.2 4.2 ± 0.2 exposed copper 0.3 X 20:1 2.3 ± 0.2 0.5 2.3 ± 0.2 0.4 0.6 Cathode Pin ID Anode 0.75 Solder pad proposal acc. IPC 7351 technical drawings according to DIN specifications Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.02-4 Issue: 3; 26.09.08 21488 0.254 Document Number: 85194 Rev. 1.0, 28-Jan-10 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 5 VSMG2000X01, VSMG2020X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH TAPING AND REEL DIMENSIONS in millimeters: VSMG2000 Reel Unreel direction X Ø 62 ± 0.5 2. 0.5 5± Tape position coming out from reel 6000 pcs/reel Ø 330 ± 1 Ø 13 ± 0.5 Label posted here 12.4 ± 1.5 Technical drawings according to DIN specifications Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Empty (400 mm min.) 1.75 ± 0.1 Document Number: 85194 Rev. 1.0, 28-Jan-10 Ø 1.55 ± 0.05 Terminal position in tape Device VEMT2000 Collector VEMT2500 VEMD2000 Cathode VSMB2000 Anode Emitter 4 ± 0.1 2 ± 0.05 I X 2:1 Lead I Lead II 12 ± 0.3 3.05 ± 0.1 II 4 ± 0.1 Drawing-No.: 9.800-5100.01-4 Issue: X; 29.04.09 21572 www.vishay.com 6 For technical questions, contact: emittertechsupport@vishay.com 5.5 ± 0.05 VSMG2000X01, VSMG2020X01 High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, GaAlAs, DH TAPING AND REEL DIMENSIONS in millimeters: VSMG2020 Reel Unreel direction X 2. Ø 62 ± 0.5 5± 0.5 Tape position coming out from reel 6000 pcs/reel Ø 330 ± 1 Ø 13 ± 0.5 Label posted here 12.4 ± 1.5 technical drawings according to DIN specifications Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Empty (400 mm min.) 1.75 ± 0.1 5.5 ± 0.05 12 ± 0.3 www.vishay.com 7 Terminal position in tape Device VEMT2020 Collector VEMT2520 VSMB2020 Cathode VEMD2020 Anode Emitter Ø 1.55 ± 0.05 I X 2:1 4 ± 0.1 2 ± 0.05 Lead I Lead II 3.05 ± 0.1 II 4 ± 0.1 Drawing-No.: 21571 9.800-5091.01-4 Issue: X; 29.04.09 Document Number: 85194 Rev. 1.0, 28-Jan-10 For technical questions, contact: emittertechsupport@vishay.com Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1