VSMG3700-GS18

VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability • High radiant power 94 8553 • High radiant intensity • Angle of half intensity: ϕ = ± 60° • Low forward voltage • Suitable for high pulse current operation • High modulation band width: fc = 18 MHz DESCRIPTION VSMG3700 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD). • Good spectral matching with Si photodetectors • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Infrared radiation source for operation with CMOS cameras (illumination) • High speed IR data transmission PRODUCT SUMMARY COMPONENT VSMG3700 Ie (mW/sr) 10 ϕ (deg) ± 60 λP (nm) 850 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSMG3700-GS08 VSMG3700-GS18 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-2 PLCC-2 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV VALUE 5 100 200 1 180 UNIT V mA mA A mW www.vishay.com 312 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81471 Rev. 1.2, 04-Sep-08 VSMG3700 High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero ABSOLUTE MAXIMUM RATINGS PARAMETER Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified acc. figure 8, J-STD-020 J-STD-051, soldered on PCB TEST CONDITION SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 85 - 40 to + 100 260 250 UNIT °C °C °C °C K/W Vishay Semiconductors 200 180 120 100 80 60 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 250 K/W IF - Forward Current (mA) RthJA = 250 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21339 Tamb - Ambient Temperature (°C) 21340 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tf fc d 6 125 10 100 40 - 0.35 ± 60 850 40 0.25 20 13 18 0.44 22 MIN. TYP. 1.5 2.3 - 1.8 10 MAX. 1.8 UNIT V V mV/K µA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm Document Number: 81471 Rev. 1.2, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 313 VSMG3700 Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero 10 000 1.25 0.01 Φe, rel - Relative Radiant Power tp/T = 0.005 Tamb < 60 °C I F - Forward Current (mA) 1000 0.02 0.05 100 0.2 0.5 DC 10 0.1 1.0 0.75 0.5 0.25 0 1 0.01 95 9985 0.1 1 10 100 16972 800 850 900 t p - Pulse Length (ms) λ- Wavelength (nm) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Relative Radiant Power vs. Wavelength 1000 Ie rel - Relative Radiant Intensity I F - Forward Current (mA) 0° 10° 20° 30° ϕ - Angular Displacement 100 t p = 100 µs tp/T = 0.001 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 10 1 0 18873_1 1 2 3 4 94 8013 0.6 0.4 0.2 0 VF - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 100 Ie - Radiant Intensity (mW/sr) 10 tp = 100 µs 1 0.1 1 18874 10 100 1000 IF - Forward Pulse Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current www.vishay.com 314 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81471 Rev. 1.2, 04-Sep-08 VSMG3700 High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters 3.5 ± 0.2 Vishay Semiconductors 1.75 ± 0.1 Pin identification 0.9 Mounting Pad Layout 1.2 area covered with solder resist 2.8 ± 0.15 C A 2.6 (2.8) 2.2 4 Ø 2.4 3 + 0.15 1.6 (1.9) 20541 SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. 19841 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 4 Document Number: 81471 Rev. 1.2, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 315 VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero 10.0 9.0 120° Adhesive tape 4.5 3.5 Blister tape 2.5 1.5 Identification Label: Vishay type group tape code production code quantity 13.00 12.75 63.5 60.5 Component cavity 94 8670 Fig. 9 - Blister Tape 180 178 14.4 max. 94 8665 3.5 3.1 2.2 2.0 Fig. 12 - Dimensions of Reel-GS08 10.4 8.4 5.75 5.25 3.6 3.4 1.85 1.65 4.0 3.6 8.3 7.7 120° 4.5 3.5 2.5 1.5 0.25 13.00 12.75 62.5 60.0 1.6 1.4 4.1 3.9 2.05 1.95 4.1 3.9 94 8668 Fig. 10 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction 94 8158 Identification Label: Vishay type group tape code production code quantity 321 329 14.4 max. 18857 Fig. 13 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. > 160 mm 40 empty compartments min. 75 empty compartments Tape leader Carrier leader Carrier trailer Fig. 11 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. www.vishay.com 316 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81471 Rev. 1.2, 04-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1