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VSMS3700 - Infrared Emitting Diode, 950 nm, GaAs - Vishay Siliconix

型  号:
VSMS3700
大  小:
141.81KB 共7页
厂  商:
VISHAY[VishaySiliconix]
主  页:
http://www.vishay.com
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VSMS3700 - Infrared Emitting Diode, 950 nm, GaAs - Vishay Siliconix
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VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60° • Low forward voltage 94 8553 • Suitable for high pulse current operation • Good spectral photodetectors matching with Si • Package matched with IR emitter series VEMT3700 • Floor life: 168 h, MSL 3, acc. J-STD-020 DESCRIPTION VSMS3700 is an infrared, 950 nm emitting diode in GaAs technology, molded in a PLCC-2 package for surface mounting (SMD). • Lead (Pb)-free reflow soldering • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications APPLICATIONS • Infrared source in tactile keyboards • IR diode in low space applications • PCB mounted infrared sensors • Emitter in miniature photo-interrupters PRODUCT SUMMARY COMPONENT VSMS3700 Ie (mW/sr) 4.5 ϕ (deg) ± 60 λP (nm) 950 tr (ns) 800 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSMS3700-GS08 VSMS3700-GS18 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-2 PLCC-2 ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81373 Rev. 1.3, 03-Nov-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 322 VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified 180 120 100 80 60 TEST CONDITION SYMBOL VR IF VALUE 5 100 200 1.5 170 100 - 40 to + 85 - 40 to + 100 260 250 UNIT V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 μs tp = 100 μs IFM IFSM PV Tj Tamb Tstg Acc. figure 11, J-STD-020 J-STD-051, soldered on PCB Tsd RthJA PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 250 K/W IF - Forward Current (mA) RthJA = 250 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21341 Tamb - Ambient Temperature (°C) 21342 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified www.vishay.com 323 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81373 Rev. 1.3, 03-Nov-09 IF = 100 mA IF = 100 mA IF = 100 mA IF = 20 mA IF = 1 A IF = 20 mA IF = 1 A EN 60825-1 TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 μs IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tr tf tf d 1.6 30 4.5 35 15 - 0.8 ± 60 950 50 0.2 800 400 800 400 0.5 8 MIN. TYP. 1.3 1.8 - 1.3 100 MAX. 1.7 UNIT V V mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns mm VSMS3700 Infrared Emitting Diode, 950 nm, GaAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Vishay Semiconductors 10 000 100 0.01 1000 0.02 0.05 Ie - Radiant Intensity (mW/sr) 100 tp/T = 0.005 Tamb < 60 °C IF - Forward Current (mA) 10 100 0.2 0.5 DC 1 10 0.1 1 0.01 95 9985 0.1 1 10 0.1 100 94 7956 tp - Pulse Length (ms) 101 102 103 104 IF - Forward Current (mA) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Intensity vs. Forward Current 10 4 10 3 10 2 10 1 10 0 10 -1 94 7996 1000 Φe - Radiant Power (mW) I F - Forward Current (mA) 100 10 1 0 1 2 3 4 0.1 100 94 8012 101 102 103 104 V F - Forward Voltage (V) IF - Forward Current (mA) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Radiant Power vs. Forward Current 1.2 VF rel - Relative Forward Voltage (V) 1.6 1.1 IF = 10 mA Ie rel; Φe rel 1.2 IF = 20 mA 0.8 1.0 0.9 0.8 0.7 0 20 40 60 80 100 0.4 0 - 10 0 10 94 7993 50 100 140 94 7990 Tamb - Ambient Temperature (°C) T amb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81373 Rev. 1.3, 03-Nov-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 324 VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs 1.25 Φe rel - Relative Radiant Power Ie, rel - Relative Radiant Intensity 1.0 0° 10° 20° 30° 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.75 0.5 0.25 IF = 100 mA 0 900 950 λ - Wavelength (nm) 1000 94 8013 94 7994 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters 3.5 ± 0.2 1.75 ± 0.1 technical drawings according to DIN specifications Pin identification 0.9 Mounting Pad Layout 1.2 area covered with solder resist 2.8 ± 0.15 C A 2.6 (2.8) 2.2 4 Ø 2.4 3 + 0.15 1.6 (1.9) Drawing-No.: 6.541-5067.01-4 Issue: 5; 04.11.08 20541 Die Position (for reference only) X = +/- 0.2 mm centrical Y = +/- 0.2 mm centrical Z = 1.13 mm +/- 0.25 mm, from top of die bottom of component www.vishay.com 325 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81373 Rev. 1.3, 03-Nov-09 4 ϕ - Angular Displacement VSMS3700 Infrared Emitting Diode, 950 nm, GaAs SOLDER PROFILE 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C 3.5 3.1 2.2 2.0 Vishay Semiconductors Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s 1.6 1.4 4.1 3.9 2.05 1.95 5.75 5.25 3.6 3.4 1.85 1.65 4.0 3.6 8.3 7.7 max. 100 s 4.1 3.9 0.25 94 8668 19841 Time (s) Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Fig. 13 - Tape Dimensions in mm for PLCC-2 DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. De-reeling direction 94 8158 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. > 160 mm 40 empty compartments min. 75 empty compartments Tape leader Carrier leader Carrier trailer TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. Fig. 14 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Adhesive tape Blister tape Component cavity 94 8670 Fig. 12 - Blister Tape Document Number: 81373 Rev. 1.3, 03-Nov-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 326 VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs COVER TAPE REMOVAL FORCE 120° 10.0 9.0 4.5 3.5 2.5 1.5 Identification Label: Vishay type group tape code production code quantity The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. 13.00 12.75 63.5 60.5 180 178 14.4 max. 94 8665 Fig. 15 - Dimensions of Reel-GS08 120° 10.4 8.4 4.5 3.5 2.5 1.5 Identification Label: Vishay type group tape code production code quantity 13.00 12.75 62.5 60.0 321 329 14.4 max. 18857 Fig. 16 - Dimensions of Reel-GS18 www.vishay.com 327 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81373 Rev. 1.3, 03-Nov-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1

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