VSMY1850X01

VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm • High reliability • High radiant power • High radiant intensity • High speed 22119 • Angle of half sensitivity:  = ± 60° • Suitable for high pulse current operation • 0805 standard surface-mountable package • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION VSMY1850X01 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD). APPLICATIONS • IrDA compatible data transmission • Miniature light barrier • Photointerrupters • Optical switch • Emitter source for proximity sensors • IR touch panels • IR Flash • IR illumination • 3D TV PRODUCT SUMMARY COMPONENT VSMY1850X01 Ie (mW/sr) 10  (deg) ± 60 p (nm) 850 tr (ns) 10 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE VSMY1850X01 Note • MOQ: minimum order quantity PACKAGING Tape and reel REMARKS MOQ: 3000 pcs, 3000 pcs/reel PACKAGE FORM 0805 ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 83317 Rev. 1.0, 13-Oct-10 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient acc. figure 7, J-STD-020 J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.1, tp = 100 μs tp = 100 μs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1 190 100 - 40 to + 85 - 40 to + 100 260 270 UNIT V mA mA A mW °C °C °C °C K/W 200 120 100 80 60 40 20 0 0 20 40 60 80 100 22109 PV - Power Dissipation (mW) 160 120 RthJA = 270 K/W 80 IF - Forward Current (mA) RthJA = 270 K/W 40 0 22108 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time Virtual source diameter www.vishay.com 2 IF = 100 mA IF = 30 mA IF = 30 mA IF = 100 mA, 20 % to 80 % IF = 100 mA, 20 % to 80 % VR = 0 V, f = 1 MHz, E = 0 mW/cm2 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 100 mA, tp = 20 ms IF = 100 mA TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs IF = 1 mA IF = 10 mA SYMBOL VF VF TKVF TKVF IR CJ Ie Ie e TKe  p  TKp tr tf d For technical questions, contact: emittertechsupport@vishay.com 840 5 MIN. TYP. 1.65 2.9 - 1.4 - 1.18 not designed for reverse operation 125 10 85 50 - 0.35 ± 60 850 30 0.25 10 10 0.5 870 15 MAX. 1.9 UNIT V V mV/K mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm ns ns mm Document Number: 83317 Rev. 1.0, 13-Oct-10 VSMY1850X01 High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, Surface Emitter Technology BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 0° 10 tp = 100 µs 10° 20° 30° Ie, rel - Relative Radiant Intensity 1 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.1 0.01 0.001 0 22097 0.5 1 1.5 2 2.5 3 3.5 94 8013 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Intensity vs. Angular Displacement 1000 Ie - Radiant Intensity (mW/sr) 100 tp = 100 µs 10 1 0.1 0.001 22110 0.01 0.1 1 IF - Forward Current (A) Fig. 4 - Radiant Intensity vs. Forward Current 1 Φe, rel - Relative Radiant Power IF = 30 mA 0.75 0.5 0.25 0 650 21776-1 750 850 950 λ - Wavelength (nm) Fig. 5 - Relative Radiant Power vs. Wavelength Document Number: 83317 Rev. 1.0, 13-Oct-10 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 ϕ - Angular Displacement IF - Forward Current (A) VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology REFLOW SOLDER PROFILE 300 250 255 °C 240 °C 217 °C max. 260 °C 245 °C DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 °C/s max. ramp down 6 °C/s max. 100 s DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. 19841 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 PACKAGE DIMENSIONS in millimeters Cathode Bottom View Anode technical drawings according to DIN specifications 1 Not indicated tolerances ± 0.1 Side View 2 0.35 0.6 0.6 0.85 Top View Recommended solder pad Footprint 1 1 1.25 0.82 0.625 1.2 0.6 Drawing-No.: 6.541-5083.01-4 Issue: 1; 29.03.10 22111 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 83317 Rev. 1.0, 13-Oct-10 VSMY1850X01 High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, Surface Emitter Technology BLISTER TAPE DIMENSIONS in millimeters 4 Ø 1.55 ± 0.05 0.2 ± 0.05 2 ± 0.05 Anode 3.5 ± 0.05 2.24 0.94 Cathode Ø 1.1 + 0.1 4 1.45 Not indicated tolerances ±0.1 Reel off direction 1.75 Drawing-No.: 9.700-5352.01-4 Issue: 1; 13.04.10 22112 technical drawings according to DIN specifications Document Number: 83317 Rev. 1.0, 13-Oct-10 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 5 8 VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology REEL DIMENSIONS in millimeters 8.4 +2.5 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. Z 2:1 14.4 max. 1.5 min. Drawing-No.: 9.800-5096.01-4 Issue: 2; 26.04.10 20875 technical drawings according to DIN specifications Ø 20.2 min. Ø 13 - 0.2 + 0.5 www.vishay.com 6 For technical questions, contact: emittertechsupport@vishay.com Document Number: 83317 Rev. 1.0, 13-Oct-10 Ø 177.8 max. Ø 55 min. Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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