VSC7927KF

VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7927 Features • Rise Times of Less Than 100ps • High Speed Operation (Up to 2.5 Gb/s NRZ Data) • Differential or Single-Ended Inputs • Single Supply • ECL-Compatible Clock and Data Inputs SONET/SDH 2.5Gb/s Laser Diode Driver • Direct Access to Modulation and Bias FETs • Data Density Monitors • On-Chip Reclocking Register • On-Chip Mux for Clocked or Non-clocked Applications • On-Chip 50Ω Input Termination: Clock and Data General Description The VSC7927 is a single 5V supply, 2.5 Gb/s laser diode driver with direct access to the laser modulation and bias FETs. Laser bias and modulation currents are set by external components allowing precision monitoring and setting of the current levels. Data density outputs are provided to allow the user to adjust the laser bias in high unbalanced data applications. Clock and data inputs are differentially terminated to 50Ω. Applications • SDH/SONET @ 622Mb/s, 1.244Gb/s, 2.488Gb/s • Full Speed Fibre Channel (1.062Gb/s) VSC7927 Block Diagram MK NMK IOUT NIOUT DIN 50 Ω** DINTERM* 50 Ω** NDIN DQ M U X IBIAS DCC CLK 50 Ω** CLKTERM* 50 Ω ** NCLK SEL MIP *Terminated to Off-chip Capacitor **On Die Components VIB VIP IMOD IBIAS MIB G52201-0, Rev 3.0 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 1 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver Table 1: Signal Pin Reference Signal DIN, NDIN MK, NMK NIOUT IOUT VSS GND VIP MIP VIB MIB IBIAS CLK, NCLK DINTERM CLKTERM DCC SEL Total Pins VSC7927 Description Data Input and Data Reference, On-chip 50Ω Termination Data Density Differential Outputs Laser Modulation Current Output (Complementary) Laser Modulation Current Output (to Laser Cathode) Negative Voltage Rail Positive Voltage Rail Modulation Gate Node Modulation Source Node Bias Gate Node Bias Source Node Laser Bias Output (To Laser Cathode) Clock Input and Clock Reference, On-chip 50Ω Termination Data Reference Clock Reference Duty Cycle Control, Leave Floating Clk/Non-clk Data Select Type In Out Out Out Pwr Pwr In In In In Out In In In In In Level ECL ECL # Pins 2 2 1 1 2 5 1 1 1 1 1 2 1 1 1 1 24 — — Pwr Pwr DC DC DC DC DC ECL DC DC DC DC — — Table 2: Mux Select Logic Table SEL VSS GND N/C Mode Select Clocked Data In Non-clocked Data In Non-clocked Data In Table 3: Absolute Maximum Ratings Symbol VSS TJ TSTG Rating Negative Power Supply Voltage Maximum Junction Temperature Storage Temperature Limit VCC to -6.0V -55°C to + 125°C -65°C to +150°C Table 4: Recommended Operating Conditions Symbol GND VSS TCl TJ Parameter Positive Voltage Rail Negative Voltage Rail Operational Temperature Junction Temperature (1) Min — -5.5 -40 Typ 0 -5.2 Max — -4.9 85 (2) Units V V °C °C Conditions — — — Power dissipation = 1.3W 125 NOTES: (1) Lower limit of specification is ambient temperature and upper limit is case temperature. (2) See section “Calculation of the Maximum Case Temperature” for detailed maximum temperature calculations. Page 2 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52201-0, Rev 3.0 04/05/01/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7927 Table 5: High Speed Inputs and ECL Outputs Symbol VIN VCM VOH VOL VIN SONET/SDH 2.5Gb/s Laser Diode Driver Parameter Single-ended Input Voltage Swing Differential Input Common Mode Range ECL Output High Voltage ECL Output Low Voltage On-Chip Terminations Min 300 -2.3 -1200 Typ — — — — — Max 1500 -1.3 Units mVp-p V mV mV Ω Conditions VCM = -2.0V VSS = -5.2V 50Ω to -2.0V 50Ω to -2.0V — -1600 65 — 35 Table 6: Power Dissipation Symbol IVSS PD Parameter Power Supply Current (VSS) Total Power Dissipation Min — — Typ — — Max 120 700 Units mA mW Conditions VSS = -5.5V, IMOD = IBIAS = 0mA, MK/NMK open circuit VSS = -5.5V, IMOD = IBIAS = 0mA, RLOAD = 25Ω to GND, MK/NMK terminated 50Ω to -2V Table 7: Laser Driver DC Electrical Specifications Symbol IBIAS IMOD VIB VIP VOCM Parameter Programmable Laser Bias Current Programmable Modulation Current Laser Bias Control Voltage Laser Modulation Control Voltage Output Voltage Compliance Min 2 2 — — Typ — — — — GND 3V Max 100 100 VSS + 2.1 VSS + 2.1 — Units mA mA V V V — Conditions — IBIAS = 50mA IMOD= 60mA VSS = -5.2V — Table 8: Laser Driver AC Electrical Specifications Symbol tR, tF tSU tH Parameter Output Rise and Fall Times Data to Clock Setup Time Hold Time Min — — 20 Typ — 50 50 Max 100 Units ps ps ps Conditions 25Ω load, 20%-80%, 20mA < IMOD < 60mA, IBIAS = 60mA 90 — — — Table 9: Package Thermal Specifications Symbol θJCC Parameter Thermal Resistance from Junction-to-Case Min — Typ 25 Max — Units °C/W Conditions Ceramic Package G52201-0, Rev 3.0 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 3 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver VSC7927 Calculation of the Maximum Case Temperature The VSC7927 is designed to operate with a maximum junction temperature of 125°C. The rise from the case to junction is determined by the power dissipation of the device. The power dissipation is determined by the VSS current plus the operating IMOD and IBIAS currents. The power of the chip is determined by the following formula: PD = (-VSS * ISS) + ((VIOUT – VSS) * IMOD) + ((VIBIAS – VSS) * IBIAS) For example with: VSS IMOD IBIAS VIBIAS VIOUT PD PD = = = = = = = -5.2V 40mA 20mA -2.0V -2.0V (-5.2 * 150mA) + ((5.2 - 2.0) * 40mA) + ((5.2-- 2.0) * 20mA) 780mW + 128mW + 64mW = 972mW The thermal rise from junction-to-case is θJC * PD. For the ceramic package, θJCP = 25°C/W. Thus the thermal rise is: 25°C/W * 972W = 24.3°C The maximum case temperature is: 125°C – 24.3°C = 100.7°C The absolute maximum power dissipation of the device is at: VSS IMOD IBIAS VIBIAS VIOUT PD PD = = = = = = = -5.5V 60mA 50mA 0V 0V (5.5 * 150mA) + (5.5 * 60mA) + (5.5mA * 50mA) 1.43W This will net a maximum junction to case thermal rise of: 1.43W * 25°C/W = 35.8°C This situation will allow maximum case temperature of: 35.8°C – 58°C = 89.2°C Page 4 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52201-0, Rev 3.0 04/05/01/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7927 SONET/SDH 2.5Gb/s Laser Diode Driver Figure 1: On-chip Data and Clock Input Configuration GND DIN (CLK) DINTERM (CLKTERM) NDIN (NCLK) GND DATA BUFFER (CLOCK BUFFER) X * 50 * * 4.0K 6.4K X * 50 X *On-chip Components VSS VSS DINTERM to -2.0V for Differential ECL Inputs Figure 2: Single-Ended Operation DATA SOURCE 0.1µf GND 0.1µf 7927 DIN DINTERM NDIN 0.1µf 0.1µf GND CLOCK SOURCE 0.1µf GND CLK CLKTERM NCLK 0.1µf GND G52201-0, Rev 3.0 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 5 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver Figure 3: Single-Ended AC-Coupled GND VSC7927 0.1µf SOURCE DINTERM (CLKTERM) DIN (CLK) X 50 4.0K -2.0V 50 6.4K X X 0.1µf GND NDIN (NCLK) 0.1µf VSS GND Figure 4: Differential AC-Coupled GND 0.1µf SOURCE 0.1µf DIN (CLK) X DINTERM (CLKTERM) 50 4.0K -2.0V X 0.1µf GND NDIN (NCLK) 50 6.4K X VSS Figure 5: Differential DC-Coupled GND DIN (CLK) X SOURCE DINTERM (CLKTERM) 50 4.0K -2.0V X NDIN (NCLK) 50 6.4K X -2.0V VSS Page 6 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52201-0, Rev 3.0 04/05/01/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7927 I (MIB) 30 mA SONET/SDH 2.5Gb/s Laser Diode Driver Figure 6: Control Signals VIP and VIB VIB VSS + 1.5 Volts (Typical) Typical Bias Current v.s. Bias Voltage I (MIP) 60 mA VIP VSS + 1.5 Volts (Typical) Typical Modulation Current v.s. Modulation Voltage Figure 7: Simplified Output Structure NIOUT IOUT IBIAS X X X VIP X IMOD OUTPUT DIFF PAIR IBIAS X VIB X MIP X MIB G52201-0, Rev 3.0 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 7 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver Figure 8: Pad Assignments for VSC7927 Die 1720µm 1620µm 50µm 50µm VSC7927 50µm 120 120µm 150µm PAD 34 PAD 33 PAD 32 PAD 31 PAD 30 PAD 29 PAD 28 PAD 27 PAD 26 DCC VSS VSS VSS VSS VIP MIP MIP MIB PAD 1 N/C PAD 2 NDIN PAD 3 DIN PAD 4 DINT PAD 5 CLOCKT PAD 6 CLOCK PAD 7 NCLOCK PAD 8 N/C SEL PAD 9 GND PAD 10 PAD 25 VIB PAD 24 GND PAD 23 IOUT PAD 22 IOUT PAD 21 GND PAD 20 GND PAD 19 NIOUT PAD 18 IBIAS GND GND GND GND GND NMARK MARK PAD 11 PAD 12 PAD 13 PAD 14 PAD 15 PAD 16 PAD 17 30µm 1620µm 1720µm 50µm Die Size: Actual Die Size: Pad Size: Pad Pitch: Space Between Pads: 1620µm x 1620µm 1720µmx1720µm (after the die are cut up) 120µm x 120µm 150µm 30µm Page 8 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52201-0, Rev 3.0 04/05/01/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7927 SONET/SDH 2.5Gb/s Laser Diode Driver Pin Diagram for 24-Pin Ceramic Package DCC MIB 19 18 17 16 15 14 7 8 9 10 11 13 12 VSS VSS NDIN DIN DINTERM CLKTERM CLK NCLK 24 1 2 3 4 5 6 23 22 21 20 MIP VIP VIB GND IOUT GND NIOUT IBIAS SEL GND GND GND MK Note: Package lid and bottom heat spreader are electrically connected to GND within the package. MK G52201-0, Rev 3.0 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 9 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver VSC7927 Package Information - 24 Pin Ceramic Package (Formed Leads) Top View A 24 23 22 21 20 19 Key A B C D mm 9.5 7.7 2.0 1.27 0.30 1.7 0.6 11.5 0.125 8.51 In 0.374 0.303 0.079 0.050 0.012 0.067 0.024 0.453 0.005 0.335 INDEX E 1 2 3 A 4 5 6 15 14 13 17 16 18 E F G H I J 7 8 9 10 11 D 12 Side View B I J H C G F NOTES: Drawing not to scale. Package #: 101-000-0 Issue #:1 Page 10 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52201-0, Rev 3.0 04/05/01/01 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7927 SONET/SDH 2.5Gb/s Laser Diode Driver Package Information - 24 Pin Ceramic Package (Straight Leads) Top View A 24 23 22 21 20 19 Key A B C D mm 9.5 7.7 5.8 1.27 0.30 1.7 0.6 9.53 0.125 8.51 In 0.374 0.303 .230 0.050 0.012 0.067 0.024 0.375 0.005 0.335 INDEX E 1 2 3 A 4 5 6 15 14 13 17 16 18 E F G H I J 7 8 9 10 11 D 12 Side View B I G F C H C NOTES: Drawing not to scale. G52201-0, Rev 3.0 04/05/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 11 VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 2.5Gb/s Laser Diode Driver VSC7927 Ordering Information The order number for this product is formed by a combination of the device number, and package style. VSC7927 Device Type VSC7927: 2.5Gb/s Laser Diode Driver XX Package Style KF: (Ceramic - Straight Leads) KFL: (Ceramic- Formed Leads) KFRL: (Ceramic - Reversed Formed Leads}* X : (Bare Die) *Optional Reversed Formed Leads: Package leads have the same profile and dimensions, but heat spreader is away from board. Please contact the factory for additional information. Notice Vitesse Semiconductor Corporation (“Vitesse”) provides this document for informational purposes only. This document contains pre-production information about Vitesse products in their concept, development and/or testing phase. All information in this document, including descriptions of features, functions, performance, technical specifications and availability, is subject to change without notice at any time. Nothing contained in this document shall be construed as extending any warranty or promise, express or implied, that any Vitesse product will be available as described or will be suitable for or will accomplish any particular task. Vitesse products are not intended for use in life support appliances, devices or systems. Use of a Vitesse product in such applications without written consent is prohibited. Page 12 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com G52201-0, Rev 3.0 04/05/01/01