VSD004N03MS

VSD004N03MS 30V/150A N-Channel Advanced Power MOSFET Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V V DS 30 V R DS(on),TYP@ VGS=10 V 2.2 mΩ R DS(on),TYP@ VGS=4.5V 2.8 mΩ ID 150 A  Fast Switching TO-252  100% Avalanche Tested  Pb-free lead plating; RoHS compliant Part ID Package Type Marking VSD004N03MS TO-252 004N03M Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Rating Unit 30 V TC =25°C 150 A TC =25°C 150 A TA =100°C 96 A V(BR)DSS Drain-Source breakdown voltage IS Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① TC =25°C 500 A EAS Avalanche energy, single pulsed ② ID=40A 80 mJ IAS Avalanche energy, single pulsed ② 85 A PD Maximum power dissipation 125 W ±20 V -55 to 175 °C Typical Unit TA =25°C VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter R JC Thermal Resistance-Junction to Case 1.2 °C/W R JA Thermal Resistance Junction-Ambient 50 °C/W Copyright Vanguard Semiconductor Co., Ltd Rev A – Jan.4th, 2016 www.vgsemi.com VSD004N03MS 30V/150A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TC = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 -- -- V Zero Gate Voltage Drain Current(Tc=25℃) VDS=24V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tc=125℃) VDS=24V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 0.8 1.5 2.5 V RDS(ON) Drain-Source On-State Resistance③ VGS=10V, ID=40A -- 2.2 4.0 mΩ RDS(ON) Drain-Source On-State Resistance③ VGS=4.5V, ID=10A -- 2.8 5.0 mΩ RDS(ON) Drain-Source On-State Resistance③ VGS=4.2V, ID=5A -- 3.5 6.0 mΩ -- 5150 -- pF -- 580 -- pF -- 405 -- pF -- 85 -- nC -- 14 -- nC -- 23 -- nC -- 14 -- nS V(BR)DSS IDSS Dynamic Electrical Characteristics @ T C= 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V,VGS=0V, f=1MHz VDS=15V,ID=20A, VGS=10V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=20A, -- 18 -- nS t d(off) Turn-Off Delay Time RG=3Ω, -- 43 -- nS tf Turn-Off Fall Time -- 16 -- nS VDD=15V, VGS=10V Source- Drain Diode Characteristics@ TC = 25°C (unless otherwise stated) VSD Forward on voltage ISD=40A,VGS=0V -- 0.84 1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=20A, -- 37 -- nS Qrr Reverse Recovery Charge VGS=0V di/dt=100A/μs 32 nC NOTE: ① Repetitive rating; pulse width limited by max. junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.1mH,RG = 25Ω, IAS = 40A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 300μs; duty cycle≤ 2%. Copyright Vanguard Semiconductor Co., Ltd Rev A – Jan.4th, 2016 www.vgsemi.com VSD004N03MS 30V/150A N-Channel Advanced Power MOSFET Fig1. Typical Output Characteristics Fig2. Normalized Threshold Voltage Vs. Temperature Normalized On Resistance Tj - Junction Temperature (°C) ID, Drain-Source Current (A) VDS, Drain -Source Voltage (V) Normalized Threshold Voltage (Vth) ID, Drain-Source Current (A) Typical Characteristics Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature ID - Drain Current (A) Tj - Junction Temperature (°C) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev A – Jan.4th, 2016 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com VSD004N03MS 30V/150A N-Channel Advanced Power MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS , Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs.Gate-Source Thermal Resistance) ZqJA Normalized Transient Fig7. Typical Capacitance Vs.Drain-Source Voltage Qg -Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and Fig11. Switching Time Test Circuit and waveforms waveforms Copyright Vanguard Semiconductor Co., Ltd Rev A – Jan.4th, 2016 www.vgsemi.com VSD004N03MS 30V/150A N-Channel Advanced Power MOSFET TO-252 Package Outline DIMENSIONS ( unit : mm ) Symbol Min Typ Max Symbol Min Typ Max A 2.22 2.30 2.38 A1 0.46 0.58 0.93 b 0.71 0.79 0.89 b1 0.90 0.98 1.10 b2 5.00 5.30 5.46 c 0.20 0.40 0.56 D1 5.98 6.05 6.22 D2 -- 4.00 -- E 6.47 6.60 6.73 E1 5.10 5.28 5.45 e -- 2.28 -- e1 -- 4.57 -- HD 9.60 10.08 10.40 L 2.75 2.95 3.05 L1 -- 0.50 -- L2 0.80 0.90 1.10 w -- 0.20 -- y 0.20 -- -- Customer Service Sales and Service: sales@vgsemi.com Vanguard Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com Copyright Vanguard Semiconductor Co., Ltd Rev A – Jan.4th, 2016 www.vgsemi.com