VSO008N10MS

VSO008N10MS 100V/17A N-Channel Advanced Power MOSFET Features V DS 100 V R DS(on),TYP@ VGS=10 V 6.4 mΩ R DS(on),TYP@ VGS=4.5 V 10 mΩ ID 17 A  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology SOP8  100% Avalanche test  Pb-free lead plating; RoHS compliant Part ID Package Type Marking VSO008N10MS SOP8 008N10M Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage 100 V VGS Gate-Source voltage ±20 V IS Diode continuous forward current TA =25°C 2.6 A ID TA =25°C 17 A Continuous drain current @VGS=10V TA =100°C 11 A IDM Pulse drain current tested ① TA =25°C 68 A EAS Avalanche energy, single pulsed ② 104 mJ PD Maximum power dissipation 3.1 W TA =25°C MSL TSTG , TJ Level 3 Storage and Junction Temperature Range -55 to 150 °C Typical Unit Thermal Characteristics Symbol Parameter RθJL Thermal Resistance, Junction-to-Lead 24 °C/W R JA Thermal Resistance, Junction-to-Ambient 40 °C/W Copyright Vanguard Semiconductor Co., Ltd Rev C – APR, 2019 www.vgsemi.com VSO008N10MS 100V/17A N-Channel Advanced Power MOSFET Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 -- -- V Zero Gate Voltage Drain Current VDS=100V,VGS=0V -- -- 1 uA Zero Gate Voltage Drain Current( Tj =125℃) VDS=100V,VGS=0V -- -- 100 uA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.3 1.8 2.3 V RDS(ON) Drain-Source On-State Resistance③ VGS=10V, ID=10A -- 6.4 8 mΩ RDS(ON) Drain-Source On-State Resistance③ VGS=4.5V, ID=6A -- 10 12 mΩ 2250 2645 3050 pF 980 1155 1305 pF 25 35 45 pF -- 3.1 -- Ω -- 45 -- nC V(BR)DSS IDSS Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge VDS=50V,ID=10A, -- 23 -- nC Qgs Gate-Source Charge VGS=10V -- 8 -- nC Qgd Gate-Drain Charge -- 9 -- nC -- 11.7 -- ns VDS=30V,VGS=0V, f=1MHz f=1MHz Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=10A, -- 7.2 -- ns t d(off) Turn-Off Delay Time RG=3.0Ω, -- 34.5 -- ns tf Turn-Off Fall Time -- 12.3 -- ns VDD=50V, VGS=10V Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=10A,VGS=0V -- 0.8 1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=10A, -- 21.6 -- ns Qrr Reverse Recovery Charge -- 44.7 -- nC VGS=0V di/dt=500A/μs NOTE: ① Repetitive rating; pulse width limited by max junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 16A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 300μs; duty cycle≤ 2%. Copyright Vanguard Semiconductor Co., Ltd Rev C – APR, 2019 www.vgsemi.com VSO008N10MS 100V/17A N-Channel Advanced Power MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj Normalized On Resistance ID, Drain-Source Current (A) Tc, Case Temperature (°C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) Tj - Junction Temperature (°C) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev C – APR, 2019 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com VSO008N10MS 100V/17A N-Channel Advanced Power MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZθJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg - Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms Copyright Vanguard Semiconductor Co., Ltd Rev C – APR, 2019 Fig11. Switching Time Test Circuit and waveforms www.vgsemi.com VSO008N10MS 100V/17A N-Channel Advanced Power MOSFET Marking Information Vs 008N10M XXXYWW 1st line： Vanguard Code（Vs） ， Vanguard Logo nd 2 line：Part Number（008N10M） 3rd line：Date code （XXXYWW） XXX： Wafer Lot Number Code , code changed with Lot Number Y： Year Code，(e.g. E=2017, F=2018, G=2019, H=2020, etc) WW： Week Code (01 to 53) Copyright Vanguard Semiconductor Co., Ltd Rev C – APR, 2019 www.vgsemi.com VSO008N10MS 100V/17A N-Channel Advanced Power MOSFET SOP8 Package Outline Data Dimensions (unit: mm) Label Min Typ Max A -- -- 1.75 A1 0.10 0.18 0.25 A2 1.25 1.35 1.50 A3 -- 0.25 -- bp 0.36 0.42 0.51 c 0.19 0.22 0.25 D 4.80 4.92 5.00 E 3.80 3.90 4.00 e -- 1.27 -- HE 5.80 6.00 6.20 L -- 1.05 -- Lp 0.40 0.68 1.00 Q 0.60 0.65 0.725 v -- 0.25 -- w -- 0.25 -- y -- 0.10 -- Z 0.30 0.50 0.70 θ 0° 8° Notes: 1. Follow JEDEC MS-012. 2. Dimension "D" does NOT include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15mm per side. 3. Dimension "E" does NOT include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.25mm per side. 4. Dimension "bp" does NOT include dambar protrusion. Allowable dambar protrusion shall be 0.1mm total in excess of "bp" dimension at maximum material condition. The dambar cannot be located on the lower radius of the foot. Customer Service Sales and Service: sales@vgsemi.com Vanguard Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com Copyright Vanguard Semiconductor Co., Ltd Rev C – APR, 2019 www.vgsemi.com