WS128K32N-55G2TQE

White Electronic Designs WS128K32-XG2TXE ADVANCED* 128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT FEATURES Access Times of 35, 45, 55ns Packaging • 68 lead, 22.4mm CQFP (G2T), 4.57mm (0.180"), (Package 509) Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8 Low Power Data Retention Commercial, Industrial and Military Temperature Ranges 5V Power Supply Low Power CMOS * This product is under development, is not qualified or characterized and is subject to change or cancellation without notice. TTL Compatible Inputs and Outputs Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Weight WS128K32-XG2TXE – 8 grams typical Radiation tolerant with epitaxial layer on die. 6T memory cells provide excellent protection against soft errors FIGURE 1 – PIN CONFIGURATION FOR WS128K32N-XG2TXE Top View NC A0 A1 A2 A3 A4 A5 CS3# GND CS4# WE1# A6 A7 A8 A9 A10 VCC Pin Description I/O0-31 A0-16 WE1-4# CS1-4# OE# VCC GND NC Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected 987654 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 3 2 1 68 67 66 65 64 63 62 61 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 The White 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form. OE# A0-16 Block Diagram WE1# CS1# WE2# CS2# WE3# CS3# WE4# CS4# VCC A11 A12 A13 A14 A15 A16 CS1# OE# CS2# NC WE2# WE3# WE4# NC NC NC 128K x 8 128K x 8 128K x 8 128K x 8 8 8 8 8 I/O0-7 I/O8-15 I/O16-23 I/O24-31 December 2000 Rev. 0 1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC Min -55 -65 -0.5 -0.5 Max +125 +150 VCC+0.5 150 7.0 Unit °C °C V °C V CS# H L L L OE# X L X H WE# X H L H WS128K32-XG2TXE ADVANCED TRUTH TABLE Mode Standby Read Write Out Disable Data I/O High Z Data Out Data In High Z Power Standby Active Active Active RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Opertating Temp. (MIL) Symbol VCC VIH VIL TA Min 4.5 2.2 -0.3 -55 Max 5.5 VCC + 0.3 +0.8 +125 Unit V V V °C CAPACITANCE TA = +25°C Parameter OE# capacitance WE1-4# capacitance CQFP G2T CS1-4# capacitance Data# I/O capacitance Address input capacitance Symbol Conditions COE VIN = 0V, f = 1.0 MHz CWE VIN = 0V, f = 1.0 MHz CCS CI/O CAD Max Unit 50 pF pF 20 VIN = 0V, f = 1.0 MHz 20 pF VI/O = 0V, f = 1.0 MHz 20 pF VIN = 0V, f = 1.0 MHz 50 pF RADIATION CHARACTERISTICS Total Dose (TM1019.5) Functional (Krads) 30 Parametric (Krads) 30 Typical Iccsb (mA) This parameter is guaranteed by design but not tested. Latch-up 25°C VCC Max SEU LET Threshold (VCC MIN) Cross Section /BIT (E-6 cm2) (MeV/mg/cm2) (MeV/mg/cm2) 1.2 >100 2 0.2 DC CHARACTERISTICS VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C Parameter Input Leakage Current Output Leakage Current Operating Supply Current Standby Current Output Low Voltage Output High Voltage NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V Sym ILI ILO ICC ISB VOL VOH Conditions VCC = 5.5, VIN = GND to VCC CS# = VIH, OE# = VIH, VOUT = GND to VCC CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5 CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 IOL = 8mA, VCC = 4.5 IOH = -40mA, VCC = 4.5 Min Max 10 10 520 8 0.4 Units µA µA mA mA V V 2.4 DATA RETENTION CHARACTERISTICS -55°C ≤ TA ≤ +125°C Characteristic Data Retention Voltage Data Retention Quiescent Current Chip Disable to Data Retention Time (1) Operation Recovery Time (1) NOTE: Parameter guaranteed, but not tested. December 2000 Rev. 0 2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com Sym VCC ICCDR TCDR TR Conditions VCC = 2.0V CS ≥ VCC -0.2V VIN ≥ VCC -0.2V or VIN ≤ 0.2V Min 2 — 0 TRC Max — 1 — — Units V mA ns ns White Electronic Designs AC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Symbol tRC tAA tOH tACS tOE tCLZ1 tOLZ1 tCHZ1 tOHZ1 Min 35 3 35 15 3 0 20 12 3 0 20 15 -35 Max 35 3 45 20 Min 45 -45 Max 45 WS128K32-XG2TXE ADVANCED -55 Min 55 3 55 30 3 0 20 20 Max 55 Units ns ns ns ns ns ns ns ns ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C Parameter Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold Time Symbol tWC tCW tAW tDW tWP tAS tAH tOW1 tWHZ1 tDH Min 35 25 25 20 25 0 0 0 0 -35 Max Min 45 35 35 25 35 0 0 0 0 -45 Max Min 55 45 45 25 45 0 0 0 0 -55 Max ns ns ns ns ns ns ns ns ns ns Units 10 15 20 1. This parameter is guaranteed by design but not tested. FIGURE 2 – AC TEST CIRCUIT AC Test Conditions I OL Current Source D.U.T. C eff = 50 pf VZ 1.5V Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V (Bipolar Supply) I OH Current Source Notes: V Z is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75Ω. V Z is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. December 2000 Rev. 0 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WS128K32-XG2TXE ADVANCED FIGURE 3 – TIMING WAVEFORM - READ CYCLE CS# OE# READ CYCLE 1, (CS# = OE# = VIL, WE# = VIH) READ CYCLE 2 (WE# = VIH) FIGURE 4 – WRITE CYCLE - WE# CONTROLLED CS# WE# WRITE CYCLE 1, WE# CONTROLLED FIGURE 5 – WRITE CYCLE - CS# CONTROLLED WS32K32-XHX CS# WE# WRITE CYCLE 2, CS# CONTROLLED December 2000 Rev. 0 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WS128K32-XG2TXE ADVANCED PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T) 25.15 (0.990) ± 0.26 (0.010) SQ 22.36 (0.880) ± 0.26 (0.010) SQ 4.57 (0.180) MAX 0.27 (0.011) ± 0.04 (0.002) Pin 1 0.25 (0.010) REF 24.03 (0.946) ± 0.26 (0.010) 1° / 7° 1.0 (0.040) ± 0.127 (0.005) R 0.25 (0.010) 0.19 (0.007) ± 0.06 (0.002) 23.87 (0.940) REF DETAIL A 1.27 (0.050) TYP SEE DETAIL "A" 0.38 (0.015) ± 0.05 (0.002) 20.3 (0.800) REF The White 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form. 0.940" TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES December 2000 Rev. 0 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs ORDERING INFORMATION WS128K32-XG2TXE ADVANCED W S 128K 32 X - XXX X X E X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads E = Epitaxial Layer on die DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE TYPE: G2T = 22.4mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 510) ACCESS TIME (ns) IMPROVEMENT MARK: N = No Connect at pin 8, 21, 28 and 39 in HIP for Upgrades ORGANIZATION, 128Kx32 User configurable as 256Kx16 or 512Kx8 SRAM WHITE ELECTRONIC DESIGNS CORPORATION * Low Power Data Retention only available in G2T Package Type December 2000 Rev. 0 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com