WSF128K16-37H1IA

White Electronic Designs FEATURES Access Times of 35ns (SRAM) and 70ns (FLASH) Access Times of 70ns (SRAM) and 120ns (FLASH) Packaging • 66-pin, PGA Type, 1.075 inch square HIP, Hermetic Ceramic HIP (Package 400) • 66-pin, PGA Type, 1.185 inch square HIP, Hermetic Ceramic HIP (Package 401) • 68 lead, Hermetic CQFP (G1U)1, 22.4mm (0.880 inch) square (Package 519). Designed to fit JEDEC 68 lead 0.990” CQFJ footprint (FIGURE 2) • 68 lead, Hermetic CQFP (G1T), 22.4mm (0.880 inch) square (Package 524) 128Kx16 SRAM 128Kx16 5V FLASH Organized as 128Kx16 of SRAM and 128Kx16 of Flash Memory with separate Data Buses Both blocks of memory are User Configurable as 256Kx8 Low Power CMOS Commercial, Industrial and Military Temperature Ranges WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 TTL Compatible Inputs and Outputs Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Weight • WSF128K16-XHX — 13 grams typical • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical • WSF128K16-XG1TX — 5 grams typical FLASH MEMORY FEATURES 10,000 Erase/Program Cycles Sector Architecture • 8 equal size sectors of 16K bytes each • Any combination of sectors can be concurrently erased. Also supports full chip erase 5 Volt Programming; 5V ± 10% Supply Embedded Erase and Program Algorithms Hardware Write Protection Page Program Operation and Internal Program Control Time. Note: For programming information refer to Flash Programming 1M5 Application Note. Note 1: Package not recommended for new designs FIGURE1 PIN CONFIGURATION FOR WSF128K16-XHX AND WSF128K16-XH1X Top View 1 SD8 SD9 SD10 A13 A14 A15 A16 NC SD0 SD1 SD2 11 22 12 SWE2# SCS2# GND SD11 A10 A11 A12 VCC SCS1# NC SD3 33 23 SD15 SD14 SD13 SD12 OE# NC SWE1# SD7 SD6 SD5 SD4 FD8 FD9 FD10 A6 A7 NC A8 A9 FD0 FD1 FD2 44 34 VCC FCS2# FWE2# FD11 A3 A4 A5 FWE1# FCS1# GND FD3 55 45 FD15 FD14 FD13 FD12 A0 A1 A2 FD7 FD6 FD5 FD4 66 OE# A0-16 128K x 8 SRAM 128K x 8 SRAM 128K x 8 FLASH 128K x 8 FLASH Pin Description 56 FD0-15 SD0-15 A0-16 SWE1-2# SCS1-2# OE# VCC GND NC FWE1-2# FCS1-2# Flash Data Inputs/Outputs SRAM Data Inputs/Outputs Address Inputs SRAM Write Enable SRAM Chip Selects Output Enable Power Supply Ground Not Connected Flash Write Enable Flash Chip Select Block Diagram S W E 1 # S CS 1 # S W E 2 # S CS 2 # F W E 1 # F CS 1 # F W E 2 # F CS 2 # 8 8 8 8 SD0-7 SD8-15 FD0-7 FD8-15 White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K16-XXX FIGURE 2 – PIN CONFIGURATION FOR WSF128K16-XG1UX1, WSF128K16-XG1TX Top View NC A0 A1 A2 A3 A4 A5 FCS3# GND FCS4# SWE1# A6 A7 A8 A9 A10 VCC Pin Description FD0-15 SD0-15 A0-16 FD0 FD1 FD2 FD3 FD4 FD5 FD6 FD7 GND FD8 FD9 FD10 FD11 FD12 FD13 FD14 FD15 Flash Data Inputs/Outputs SRAM Data Inputs/Outputs Address Inputs SRAM Write Enable SRAM Chip Selects Output Enable Power Supply Ground Not Connected Flash Write Enable Flash Chip Select 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SD0 SD1 SD2 SD3 SD4 SD5 SD6 SD7 GND SD8 SD9 SD10 SD11 SD12 SD13 SD14 SD15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 SWE1-2# SCS1-2# OE# VCC GND NC FWE1-2# FCS1-2# Block Diagram S W E 1 # S CS 1 # OE# A0-16 128K x 8 SRAM 128K x 8 SRAM 128K x 8 FLASH 128K x 8 FLASH S W E 2 # S CS 2 # F W E 1 # F CS 1 # F W E 2 # F CS 2 # SCS1# OE# SCS2# NC SWE2# FWE3# FWE4# A11 A12 A13 A14 NC NC VCC NC NC NC 8 8 8 8 SD0-7 SD8-15 FD0-7 FD8-15 NOTE 1: Package not recommended for new designs White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs ABSOLUTE MAXIMUM RATINGS Parameter Symbol Operating Temperature TA Storage Temperature TSTG Signal Voltage Relative to GND VG Junction Temperature TJ Supply Voltage VCC Parameter Flash Data Retention Flash Endurance (write/erase cycles) Min -55 -65 -0.5 -0.5 Max +125 +150 7.0 150 7.0 Unit °C °C V °C V SCS# H L L L OE# X L H X SWE# X H H L WSF128K16-XXX SRAM TRUTH TABLE Mode Standby Read Read Write Data I/O High Z Data Out High Z Data In Power Standby Active Active Active CAPACITANCE 10 years 10,000 TA = +25°C Test Symbol Condition Max Unit OE# Capacitance COE VIN = 0V, f = 1.0MHz 50 pF F/S WE1-2# Capacitance CWE VIN = 0V, f = 1.0MHz 20 pF F/S CS1-2# Capacitance CCS VIN = 0V, f = 1.0MHz 20 pF SD0-15/FD0-15 Capacitance CI/O VIN = 0V, f = 1.0MHz 20 pF A0 - A16 Capacitance CAD VIN = 0V, f = 1.0MHz 50 pF This parameter is guaranteed by design but not tested. NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min 4.5 2.2 -0.5 Max 5.5 VCC + 0.3 +0.8 Unit V V V DC CHARACTERISTICS VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C Parameter Input Leakage Current Output Leakage Current SRAM Operating Supply Current x 16 Mode Standby Current SRAM Output Low Voltage SRAM Output High Voltage Flash VCC Active Current for Read (1) Flash VCC Active Current for Program or Erase (2) Flash Output Low Voltage Flash Output High Voltage Flash Output High Voltage Flash Low VCC Lock Out Voltage Symbol ILI ILO ICCx16 ISB VOL VOH ICC1 ICC2 VOL VOH1 VOH2 VLKO Conditions VCC = 5.5, VIN = GND to VCC SCS# = VIH, OE# = VIH, VOUT = GND to VCC SCS# = VIL, OE# = FCS# = VIH, f = 5MHz, VCC = 5.5 FCS# = SCS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 IOL = 2.1mA, VCC = 4.5 IOH = -1.0mA, VCC = 4.5 FCS# = VIL, OE# = SCS# = VIH FCS# = VIL, OE# = SCS# = VIH IOL = 8.0mA, VCC = 4.5 IOH = -2.5 mA, VCC = 4.5 IOH = -100 µA, VCC = 4.5 Min Max 10 10 360 40 0.4 100 130 0.45 0.85 x VCC VCC -0.4 3.2 Unit µA µA mA mA V V mA mA V V V V 2.4 NOTES: 1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE# at VIH. 2. ICC active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs SRAM AC CHARACTERISTICS VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Symbol tRC tAA tOH tACS tOE tCLZ1 tOLZ1 tCHZ1 tOHZ1 -35 -70 Unit ns ns ns ns ns ns ns ns ns Parameter Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold from Write Time WSF128K16-XXX SRAM AC CHARACTERISTICS VCC = 5.0V, -55°C ≤ TA ≤ +125°C Symbol tWC tCW tAW tDW tWP tAS tAH tOW1 tWHZ1 tDH -35 -70 Unit ns ns ns ns ns ns ns ns ns ns Min Max Min Max 35 70 35 70 0 3 35 70 20 35 3 3 0 0 20 25 20 25 1. This parameter is guaranteed by design but not tested. Min Max Min Max 35 70 25 60 25 60 20 30 25 50 0 5 0 5 4 5 20 25 0 0 1. This parameter is guaranteed by design but not tested. FIGURE 3 AC Test Circuit AC TEST CONDITIONS Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level Typ VIL = 0, VIH = 3.0 5 1.5 1.5 Unit V ns V V ≈ Notes: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75Ω. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K16-XXX FIGURE 4 – SRAM TIMING WAVEFORM — READ CYCLE tRC ADDRESS tAA tRC ADDRESS SCS# tAA tOH DATA I/O PREVIOUS DATA VALID DATA VALID tACS tCLZ SOE# tCHZ READ CYCLE 1 (SCS# = OE# = VIL, SWE# = VIH) tOE tOLZ DATA I/O HIGH IMPEDANCE tOHZ DATA VALID READ CYCLE 2 (SWE# = VIH) FIGURE 5 – SRAM WRITE CYCLE — SWE# CONTROLLED tWC ADDRESS tAW tCW SCS# tAH tAS SWE# tWP tOW tWHZ tDW DATA VALID tDH DATA I/O WRITE CYCLE 1, SWE# CONTROLLED FIGURE 6 – SRAM WRITE CYCLE — SCS# CONTROLLED tWC ADDRESS tAS SCS# tAW tCW tAH tWP SWE# tDW DATA I/O DATA VALID tDH WRITE CYCLE 2, SCS# CONTROLLED White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Write Cycle Time Chip Select Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Chip Select Hold Time Write Enable Pulse Width High Duration of Byte Programming Operation (min) Chip and Sector Erase Time Read Recovery Time Before Write VCC Set-up Time Chip Programming Time Output Enable Setup Time Output Enable Hold Time (1) 1. For Toggle and Data# Polling. WSF128K16-XXX FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FWE# CONTROLLED Symbol tAVAV tELWL tWLWH tAVWL tDVWH tWHDX tWLAX tWHEH tWHWL tWHWH1 tWHWH2 tGHWL tWC tCS tWP tAS tDS tDH tAH tCH tWPH -70 Min 70 0 35 0 30 0 45 0 20 14 2.2 0 50 0 10 Max Min 120 0 50 0 50 0 50 0 20 14 2.2 0 50 0 10 -120 Max Unit ns ns ns ns ns ns ns ns ns µs sec µs µs sec ns ns 60 60 tVCS tOES tOEH 12.5 12.5 FLASH AC CHARACTERISTICS – READ ONLY OPERATIONS VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Read Cycle Time Address Access Time Chip Select Access Time OE# to Output Valid Chip Select to Output High Z (1) OE# High to Output High Z (1) Output Hold from Address, CS# or OE# Change, whichever is first 1. Guaranteed by design, not tested. Symbol tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tRC tACC tCE tOE tDF tDF tOH -70 Min 70 Max 70 70 35 20 20 0 0 Min 120 -120 Max 120 120 50 30 30 Unit ns ns ns ns ns ns ns White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Write Cycle Time Fwe# Setup Time Fcs# Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Fwe# Hold From Fwe# High Fcs# Pulse Width High Duration Of Programming Operation Duration Of Erase Operation Read Recovery Before Write Chip Programming Time Symbol tAVAV tWLEL tELEH tAVEL tDVEH tEHDX tELAX tEHWH tEHEL tWHWH1 tWHWH2 tGHEL tWC tWS tCP tAS tDS tDH tAH tWH tCPH -70 Min 70 0 35 0 30 0 45 0 20 14 2.2 0 WSF128K16-XXX FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FCS# CONTROLLED -120 Max Min 120 0 50 0 50 0 50 0 20 14 2.2 0 Max Unit ns ns ns ns ns ns ns ns ns µs sec ns sec 60 12.5 60 12.5 White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K16-XXX FIGURE 7 – AC WAVEFORMS FOR FLASH MEMORY READ OPERATIONS tRC Addresses tACC FCS# tDF OE# tOE Addresses Stable FWE# tCE tOH High Z Outputs High Z Output Valid White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K16-XXX FIGURE 8 – WRITE/ERASE/PROGRAM OPERATION, FLASH MEMORY FWE# CONTROLLED Data# Polling Addresses 5555H tWC FCS# tGHWL OE# tWP FWE# tCS tWPH tDH Data tDS tOH A0H PD tOE tDF tWHWH1 tAS PA tAH PA tRC D7# DOUT 5.0 V tCE NOTES: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D7# is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 9 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K16-XXX FIGURE 9 – AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS FOR FLASH MEMORY tAS Addresses 5555H tAH 2AAAH 5555H 5555H 2AAAH SA FCS# tGHWL OE# tWP FWE# tWPH tCS Data tDS tDH AAH 55H 80H AAH 55H 10H/30H VCC tVCS Note: SA is the sector address for Sector Erase. White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 10 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K16-XXX FIGURE 10 – AC WAVEFORMS FOR DATA# POLLING DURING EMBEDDED ALGORITHM OPERATIONS FOR FLASH MEMORY FCS# t CH t DF t OE OE# tOEH FWE# tCE t OH D7 tWHWH 1 or 2 D0-D6 D0-D6 = Invalid t OE D7 tWHWH 1 or 2 D7 D7 Valid Data High Z D0-D7 Valid Data D7# D7 = Valid Data High Z White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K16-XXX FIGURE 11 – WRITE/ERASE/PROGRAM OPERATION FOR FLASH MEMORY, CS# CONTROLLED Data# Polling Addresses 5555H tWC FWE# tGHEL OE# tCP FCS# tWS tWHWH1 tAS PA tAH PA tCPH tDH Data tDS A0H PD D7# DOUT 5.0 V NOTES: 1. PA represents the address of the memory location to be programmed. 2. PD represents the data to be programmed at byte address. 3. D7# is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates the last two bus cycles of a four bus cycle sequence. White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 12 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K16-XXX PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 13 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K16-XXX PACKAGE 519: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G1U)1 NOTE 1: Package not recommended for new designs ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 14 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K16-XXX PACKAGE 524: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1T) 25.27 (0.995) ± 0.13 (0.005) SQ 23.88 (0.940) ± 0.25 (0.010) SQ 4.06 (0.160) MAX 0.25 (0.010) MAX 0.83 (0.033) ± 0.32 (0.013) 0.84 (0.033) REF DETAIL A 1.27 (0.050) 0.38 (0.015) ± 0.05 (0.002) 20.3 (0.800) REF SEE DETAIL "A" ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 15 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs ORDERING INFORMATION W S F 128K16 - XXX X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: M = Military Screened I = Industrial C = Commercial WSF128K16-XXX -55°C to +125°C -40°C to +85°C 0°C to +70°C PACKAGE TYPE: H1 = 1.075" sq. Ceramic Hex In-line Package, HIP (Package 400) H = 1.185" sq. Ceramic Hex In-line Package, HIP (Package 401) G1U = 22.4 mm Ceramic Quad Flat Pack, CQFP (Package 519) G1T = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 524) ACCESS TIME (ns) 37 = 35ns SRAM and 70ns FLASH 72 = 70ns SRAM and 120ns FLASH ORGANIZATION, 128K x 16 FLASH SRAM WHITE ELECTRONIC DESIGNS CORP. DEVICE TYPE 128K x 16 Mixed Module 128K x 16 Mixed Module 128K x 16 Mixed Module SRAM SPEED 70ns 70ns 70ns FLASH SPEED 120ns 120ns 120ns PACKAGE 66 pin HIP (H) 66 pin HIP (H1) 68 lead CQFP/J (G1U) SMD NO. 5962-96900 01HXX 5962-96900 01HYX 5962-96900 01H9X 128K x 16 Mixed Module 128K x 16 Mixed Module 128K x 16 Mixed Module 35ns 35ns 35ns 70ns 70ns 70ns 66 pin HIP (H) 66 pin HIP (H1) 68 lead CQFP/J (G1U) 5962-96900 02HXX 5962-96900 02HYX 5962-96900 02H9X White Electronic Designs Corp. reserves the right to change products or specifications without notice. May 2003 Rev. 6 16 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com