BCX54

1 Jiangsu Weida Semiconductor Co., Ltd. NPN Transistors BCX54,BCX55,BCX56 (KCX54 ,KCX55,KCX56) Features ◆High current (max. 1A). ◆Low voltage (max.80V). ◆Package:SOT-89-3L. SOT-89-3L 1:B 2:C 3:E Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit 45 V 60 V BCX56 100 V BCX54 45 V 60 V 80 V VEBO 5 V Collector current IC 1 A Peak collector current ICM 1.5 A Peak base current IBM 0.2 A Total power dissipation Ptot 1.3 W Storage temperature Tstg -65 to +150 ℃ Junction temperature Tj 150 ℃ Operating ambient temperature Tamb -65 to +150 ℃ Thermal resistance from junction to ambient Rth(j-a) 94 K/W Thermal resistance from junction to solder point Rth(j-s) 14 K/W BCX54 Collector-base voltage Collector-emitter voltage VCBO BCX55 VCEO BCX55 BCX56 Emitter-base voltage Electrical Characteristics Ta = 25℃ Parameter Collector cutoff current PRODUCT DATA SHEET Symbol ICBO Testconditions Max Unit VCB = 30 V, IE = 0 100 nA VCB = 30 V, IE = 0; Tj = 125 10 uA 1 Min Typ Rev.69.0 2020 2 Jiangsu Weida Semiconductor Co., Ltd. NPN Transistors Emitter cutoff current IEBO VEB = 5 V, IC = 0 DC current gain hFE IC = 5 mA; VCE = 2 V 63 IC = 150 mA; VCE = 2 V 63 IC = 500 mA; VCE = 2 V 40 IC = 150 mA; VCE = 2 V 63 160 IC = 150 mA; VCE = 2 V 100 250 DC current gain BCX54-10,BCX55-10,BCX56-10 hFE BCX54-16,BCX55-16,BCX56-16 Collector-emitter saturation voltage 100 250 VCE(sat) IC = 500 mA; IB = 50 mA Base to emitter voltage VBE Transition frequency fT DC current gain ratio of the hFE complementary pairs hFE IC = 500 mA; VCE = 2 V IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 150 mA; VCE = 2V nA 0.5 V 1 V 130 1.3 MHz 1.6 hFE Classification TYPE BCX54 BCX54-10 BCX54-16 Marking BA BC BD TYPE BCX55 BCX55-10 BCX55-16 Marking BE BG BM TYPE BCX56 BCX56-10 BCX56-16 Marking BH BK BL Package mechanical data Ref. A b b1 c D D1 E E1 e e1 L SOT-89-3L PRODUCT DATA SHEET 2 Dimensions Millimeters Min. Typ. Max. Min. 1.4 1.6 0.055 0.35 0.52 0.013 0.4 0.58 0.016 0.35 0.44 0.014 4.4 4.6 0.173 1.55 2.35 2.55 0.091 3.94 4.25 0.155 1.500 3.000 0.9 1.1 0.035 Inches Typ. Max. 0.063 0.197 0.023 0.017 0.181 0.061 0.102 0.167 0.060 0.118 0.047 Rev.69.0 2020 3 Jiangsu Weida Semiconductor Co., Ltd. NPN Transistors ■ Typical Characterisitics Information furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu Weida Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. PRODUCT DATA SHEET 3 Rev.69.0 2020