BTA12-800CW

Jiangsu Weida Semiconductor Co., Ltd. BTA12/BTB12 Series 12A Triacs DESCRIPTION: With high ability to withstand the shock loading of Large current, BTA12/BTB12 series triacs provide high dv/dt rate with strong resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially recommended for use on inductive load. From all three terminals to external heatsink, BTA12 provides a rated insulation voltage of 2500 VRMS complying with UL standards (File ref: E516503). TO-220A（Ins ） TO-220B （Non-Ins ） TO-220F（Ins） TO-263 MAIN FEATURES: symbol value unit 12 A IT(RMS) VDRM/VRRM 600/800/1200 VTM ≤1.5 V V ABSOLUTE MAXIMUM RATINGS: Parameter Symbol Value Unit Tstg -40~150 ℃ Tj -40~125 ℃ Repetitive peak off-state voltage (Tj=25℃) VDRM 600/800/1200 V Repetitive peak reverse voltage (Tj=25℃) VRRM 600/800/1200 V RMS on-state current IT(RMS) 12 A ITSM 120 A I2t 78 A2s dI/dt 50 A/μs IGM 4 A PG(AV) 1 W PGM 5 W Storage junction temperature range Operating junction temperature range Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current(IG=2×IGT) Peak gate current Average gate power dissipation Peak gate power PRODUCT DATA SHEET 1 Rev.14.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BTA12/BTB12 Series 12A Triacs ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) 3 Quadrants： Parameter Test Condition IGT VD=12V, VGT RL=33Ω VGD VD=VDRM Ⅰ-Ⅱ-Ⅲ MAX Ⅰ-Ⅱ-Ⅲ MIN Tj=125℃ I =100mA IH Ⅰ-Ⅲ IG=1.2IGT SW CW BW 5 10 35 50 Ⅱ MIN Gate open Unit mA 1.5 V 0.2 V 5 10 40 60 20 30 50 70 25 40 60 80 100 200 500 1000 MAX VD=2/3VDRM Tj=125℃ dV/dt TW MAX T RL=3.3kΩ IL Value Quadrant mA mA V/µs 4 Quadrants： Parameter Test Condition IGT VD=12V, VGT VGD IH IL dV/dt PRODUCT DATA SHEET Value Quadrant Ⅰ-Ⅱ-Ⅲ MAX Ⅳ RL=33Ω MAX T IG=1.2IGT 25 50 mA 50 70 mA MIN ALL Tj=125℃ I =100mA RL=3.3kΩ B ALL VD=VDRM Ⅰ-Ⅲ-Ⅳ MAX Ⅱ VD=2/3VDRM Tj=125℃ MIN Gate open 2 Unit C 1.5 V 0.2 V 40 60 50 70 70 90 200 500 mA mA V/µs Rev.14.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BTA12/BTB12 Series 12A Triacs STATIC CHARACTERISTICS Symbol VTM Test Condition ITM=17A IDRM IRRM tp=380μs Tj=25℃ Unit 1.5 V 5 µA 1 mA Value Unit MAX Tj=25℃ VDRM= VRRM Value MAX Tj=125℃ THERMAL RESISTANCES Symbol Rth(j-c) Test Condition junction to case(AC) TO-220A(Ins） 2.3 TO-220B(Non-Ins） 1.5 TO-220F(Ins） 2.5 TO-263 1.5 ℃/W ORDERING INFORMATION BT A 12–600 Triacs A:Insulated IT(RMS):12A B:Non-Insulated CW VDRM、VRRM: B：IGT1-3≤50mA、IGT4≤100mA 600：600V C：IGT1-3≤25mA、IGT4≤50mA 800：800V TW：IGT1-3≤5mA 1200：1200V SW：IGT1-3≤10mA CW：IGT1-3≤35mA BW：IGT1-3≤50mA PRODUCT DATA SHEET 3 Rev.14.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BTA12/BTB12 Series 12A Triacs PACKAGE MECHANICAL DATA Dimensions Ref. Millimeters Min. Typ. Max. Min. Typ. Max. A 4.4 4.47 4.6 0.173 0.176 0.181 B 0.61 0.88 0.024 C 0.46 0.50 0.7 0.018 0.02 0.028 C2 1.21 1.27 1.32 0.048 0.050 0.052 C3 2.4 2.72 0.094 0.107 D 8.6 9.7 0.339 0.382 E 9.8 10.4 0.386 0.409 F 6.55 6.95 0.258 0.274 G H 2.54 28 L1 0.035 0.1 29.8 1.102 3.75 1.173 0.148 L2 1.14 1.7 0.045 0.067 L3 2.65 2.95 0.104 0.116 V1 TO-220A Ins Inches 45° 45° Dimensions Millimeters Ref. Inches Min. Typ. Max. Min. Typ. Max. A 4.4 4.47 4.6 0.173 0.176 0.181 B 0.61 0.88 0.024 C 0.46 0.50 0.7 0.018 0.02 0.028 C2 1.21 1.27 1.32 0.048 0.050 0.052 C3 2.4 2.72 0.094 0.107 D 8.6 9.7 0.339 0.382 E 9.8 10.4 0.386 0.409 F 6.55 6.95 0.258 0.274 G H 2.54 28 L1 0.035 0.1 29.8 1.102 3.75 1.173 0.148 L2 1.14 1.7 0.045 0.067 L3 2.65 2.95 0.104 0.116 V1 45° 45° TO-220B Non-Ins PRODUCT DATA SHEET 4 Rev.14.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BTA12/BTB12 Series 12A Triacs Dimensions Ref. Millimeters Min. Typ. Inches Max. Min. 4.9 0.177 0.83 0.029 Typ. Max. A 4.5 B 0.74 C 0.47 0.65 0.019 0.026 C2 2.45 2.75 0.096 0.108 C3 2.6 3 0.102 0.118 D 8.8 9.3 0.346 0.366 E 9.8 10.4 0.386 0.41 F 6.4 6.8 0.252 G H 0.8 2.54 28 L1 1.14 L3 2.65 29.8 V1 0.033 0.268 1.102 1.173 0.148 1.7 3.3 0.031 0.1 3.63 L2 0.193 0.045 0 0.067 0.13 45° 0.116 45° TO-220F Ins Dimensions Ref. Millimeters Min. Typ. Max. Min. Typ. Max. A 9.9 10.3 0.390 0.406 B 14.7 15.8 0.579 0.622 C 8.5 8.9 0.370 0.378 D 2.54 0.100 E 1.20 1.40 0.047 0.055 F 0.75 0.85 0.029 0.033 G PRODUCT DATA SHEET Inches 1.75 0.069 H 4.40 4.60 4.80 0.173 0.181 0.189 J 2.40 2.60 2.80 0.094 0.102 0.110 L 0 0.1 0.25 0 0.004 0.010 M 1.17 1.27 1.37 0.046 0.05 0.054 5 Rev.14.0 2020 Jiangsu Weida Semiconductor Co., Ltd. BTA12/BTB12 Series 12A Triacs FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS)(A) P(w) FIG.3: Surge peak on-state current versus number of cycles FIG.4:On-state characteristics (maximum values) ITM(A) ITSM(A) FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp