PESD5V0S1BL

PESD5V0S1BL DFN1006 Bi-directional ESD Protection Diode in DFN1006 Package 1. Features  Capacitance: 15pF(typ.)  Reverse Working Voltage: 5V  IEC 61000-4-2 (ESD Air): ±25KV 2. Pin Description 4. Schematic Diagram Datasheet IEC 61000-4-2 (ESD Contact): ±25KV IEC 61000-4-5 (Lightning 8/20µs): 8A 3. 5. 6. Applications  Smart Phone and Tablet PC  TV and Set Top Box  Wearable Devices  PDA Order Information Type Package Size (mm) Delivery Form Delivery Quantity P ESD5V0S1B L DFN1006 1.00x0.60x0.37 7” T&R 10,000 Limiting Values(TA = 25 °C, unless otherwise specified) Symbol 7. Parameter Conditions Min Max Unit IEC 61000-4-2; Contact Discharge - ±25 kV IEC 61000-4-2; Air Discharge - ±25 kV VESD Electrostatic Discharge Voltage PPP Peak Pulse Power tP = 8/20 µs - 80 W IPPM Rated Peak Pulse Current tP = 8/20 µs - 8 A TA Ambient Temperature Range - -55 125 ℃ Tstg Storage Temperature Range - -55 150 ℃ Electrical Characteristics(TA = 25 °C, unless otherwise specified) Symbol Parameter Conditions Reverse Working Voltage TA = 25 °C Breakdown Voltage IR = 1mA; TA = 25 °C IR Reverse Leakage Current VC Clamping Voltage CJ Junction Capacitance VRWM VBR Min Typ. Max Unit - - 5.0 V 5.6 6.5 8.4 V VRWM = 5V; TA = 25 °C - - 0.1 µA IPP=1A, tP =8/20µs - - 6 V IPP=8A, tP =8/20µs - - 10 V VR = 0V, f = 1 MHz - 15 18 pF Jiangsu Weida Semiconductor Co., Ltd. 1/ 5 PESD5V0S1BL DFN1006 Bi-directional ESD Protection Diode in DFN1006 Package 8. Datasheet Typical Characteristics Fig.1 Pulse Waveform-ESD (IEC61000-4-2) Fig.2 Transmission Line Pulse (TLP) Fig.3 V-I Characteristics for Bidirectional Diode Fig.4 IV Curve Fig.5 Clamping Voltage at IEC61000-4-2 Fig.6 Clamping Voltage at IEC61000-4-2 +8kV Pulse Waveform -8kV Pulse Waveform Jiangsu Weida Semiconductor Co., Ltd. 2/ 5 PESD5V0S1BL DFN1006 Bi-directional ESD Protection Diode in DFN1006 Package 9. Datasheet Package Outline Dimensions DFN1006 Package Outline Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.350 0.450 0.014 0.018 D 0.550 0.650 0.022 0.026 E 0.950 1.050 0.037 0.041 D1 0.420 0.520 0.017 0.020 E1 0.550 0.650 0.022 0.026 L 0.270 0.370 0.011 0.015 L1 0.000 0.100 0.000 0.004 Jiangsu Weida Semiconductor Co., Ltd. 3/ 5 PESD5V0S1BL DFN1006 Bi-directional ESD Protection Diode in DFN1006 Package Soldering Parameters FIG.5: Reflow condition tp TP Critical Zone TL to TP Ramp-up TL tL TS(max) Temperature 10. Datasheet Ramp-down Preheat TS(min) ts 25 time to peak temperatue (t 25℃ to peak) Reflow Condition Pre-heat Time Pb-Free Assembly -Temperature Min (Ts(min)) +150°C -Temperature Max(Ts(max)) +200°C -Time (Min to Max) (ts) 60-180 secs. Average ramp up rate (Liquid us Temp (TL) to peak) 3°C/sec. Max Ts(max) to TL - Ramp-up Rate 3°C/sec. Max Reflow -Temperature(TL)(Liquid us) +217°C -Temperature(tL) 60-150 secs. Peak Temp (Tp) +260(+0/-5)°C Time within 5°C of actual Peak Temp (tp) 30 secs. Max Ramp-down Rate 6°C/sec. Max xTime 25°C to Peak Temp (TP) 8 min. Max Do not exceed +260°C Jiangsu Weida Semiconductor Co., Ltd. 4/ 5 PESD5V0S1BL DFN1006 Bi-directional ESD Protection Diode in DFN1006 Package 11. Datasheet Contact Information Online product information is available at www.wdsemi.com Buy our products or get free samples,for further information and requests, Please e-mail us at:sales1@wdsemi.com 12. Copyrights & Disclaimer Information furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu Weida Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. Jiangsu Weida Semiconductor Co., Ltd. 5/ 5