2N7002T

2N7002T N-Channel ENHANCEMENT MODE POWER MOSFET P b Lead(Pb)-Free 1. GATE 2. SOURCE 3. DRAIN 3 1 2 SOT-523(SC-75) FEATURES: * Fast Switching Speed * Low On-Resistance * Low Voltage Driver APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switching Cell Phones, Pagers Maximum Ratings (TA=25°C unless otherwise specified) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation Junction temperature Range Storage Temperature Range Symbol VDSS VGSS ID PD Tj Tstg Values 60 ±20 115 150 150 -55 to +150 Unit V V mA mW °C °C Device Marking 2N7002T = K72 WEITRON http://www.weitron.com.tw 1/4 17-Sep-09 2N7002T ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage VGS=0V,ID=10µA Gate-Threshold Voltage VDS=VGS, ID=250µA Gate-body Leakage* VGS=±20V, VDS=0V Zero Gate Voltage Drain Current VGS=0V, VDS=60V On-state Drain Current VGS=10V, VDS=7.5V Drain-Source On-Resistance VGS=5V, ID=50mA VGS=10V, ID=500mA Forward Tranconductance VDS=10V, ID=200mA Input Capacitance VDS=25V, VGS=0V, f=1MHz Output Capacitance VDS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHz Symbol V(BR)DSS Vth(GS) IGSS IDSS ID(ON) RDS(on) gfs Ciss Coss Crss Min 60 1 500 80 - Typ 1000 2.0 4.4 22 11 2 Max 2 ±10 1 7.5 13.5 50 25 5 Unit V V nA µA mA ms pF SWITCHING Turn-on Time VDD=30V, RL=150 , ID=200mA, VGEN=10V, RGEN=25 VDD=30V, RL=150 , ID=200mA, VGEN=10V, RGEN=25 TD(on) T 7 11 20 ns 20 WEITRON http://www.weitron.com.tw 2/4 17-Sep-09 2N7002T Typical Characteristics WEITRON http://www.weitron.com.tw 3/4 17-Sep-09 2N7002T SOT-523 Outline Dimensions Unit:mm A SOT-523 Dim A B C D E G H J K L M Min 0.30 0.70 1.45 0.15 0.80 1.40 0.00 0.70 0.37 0.10 Max 0.50 0.90 1.75 0.50 0.40 1.00 1.80 0.10 1.00 0.48 0.25 TOP VIEW B C D E G H K L J M WEITRON http://www.weitron.com.tw 4/4 17-Sep-09