2SB647 / 2SB647A PNP General Purpose Transistors
P b Lead(Pb)-Free
3 2 2 3 1.EMITTER 3.BASE 2.COLLECTOR 1
1
TO-92MOD
MAXIMUM RATINGS(Ta=25°C)
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC PD Tj Tstg
Value
80 120 5.0 1000 900 +150 -55 to +150
Unit
V V V mA mW °C °C
WEITRON
http://www.weitron.com.tw
1/5
09-Dec-08
2SB647 / 2SB647A
ELECTRICAL CHARACTERISTICS (TA=25ºC unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage 2SB647 V(BR)CEO 2SB647A Emitter-base breakdown voltage Collector cut-off current 2SB647 2SB647A DC current gain hFE(2) Collector-emitter saturation voltage Transition frequency VCEsat VCE=-5 V, IC= -500mA IC=-500mA, IB=-50mA VCE=-5V, IC= -150mA VCE=-10V, IE=0 f=1 MHz 30 140 -1 V MHz V(BR)EBO ICBO hFE(1)* IE= -10? A, IC=0 VCB= -100 V, IE=0 VCE=-5 V, IC= -150mA IC=-1mA , IB=0 Symbol V(BR)CBO Test conditions MIN -120 -80 -100 -5 60 60 MAX -10 320 200 UNIT V V V ?A -
Ic= -10? A , IE=0
fT Cob
Output capacitance
20
pF
CLASSIFICATION OF hFE Rank
2SB647 Range 2SB647A 60-120 100-200 B 60-120 C 100-200 D 160-320
WEITRON
http://www.weitron.com.tw
2/5
09-Dec-08
2SB647 / 2SB647A
Typical Characteristics
WEITRON
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3/5
09-Dec-08
2SB647 / 2SB647A
WEITRON
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4/5
09-Dec-08
2SB647 / 2SB647A
TO-92MOD Outline Dimensions
G
unit:mm
TO-92MOD
J
D
C
K L
Di m A B C D E G J K L M
M in M ax 4.70 5.10 1.73 2.03 0.40 0.60 0.90 1.10 0.40 0.50 5.80 6.20 8.40 8.80 1.50Typ 2.90 3.10 12.20 13.45
B
M
WEITRON
http://www.weitron.com.tw
E
A
5/5
09-Dec-08
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