BAV99W

WEITRON Surface Mount Switching Diode Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-323 Package BAS16W / BAV70W BAW56W / BAV99W SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS 3 1 2 SOT-323(SC-70) SOT-323 Outline Demensions Unit:mm A T OP V IE W B C D E G H K L J M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 http://www.weitron.com.tw WEITRON BAS16W / BAV70W BAW56W / BAV99W Maximum Ratings Characteristic Reverse Voltage Forward Current (EACH DIODE) Symbol VR IF IFM BAS16W BAV70W BAW56W BAV99W 75 200 500 70 215 Unit Volts mAdc mAdc Peak Forward Surge Current Thermal Characteristics Characteristic Total Device Dissipation FR-5 Board *1, TA=25 C Derate Above 25 C Thermal Resistance Junction to Ambient Symbol PD R qJA PD R qJA TJ, Tstg Max 200 1.6 625 300 2.4 417 -55 to + 150 Unit mW mW/ C C/W mW mW/ C C/W C Total Device Dissipation Alumina Substrate*2 TA=25 C Derate Above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature *1 ER-5=1.0x0.75x0.062 in *2 Alumina=0.4x0.3x0.024 in 99.5% Alumina Electrical Characteristics Characteristic (TA=25 C Unless Otherwise Note) (Each Diode) Symbol Min Max Unit Off Characteristics Reverse Breakdown Voltage BAS16W (IBR=100 µAdc ) BAV70W/BAW56W/BAV99W Reverse Voltage Leakage Current VR=75V VR=70V VR=25V, VR=25V, BAS16W BAV70W/BAW56W/BAV99W TJ=150 C BAS16W/BAW56W/BAV99W TJ=150 C BAV70W VBR 75 70 1.0 2.5 Vdc IR 30.0 60.0 50.0 50.0 100.0 µAdc VR=75V, TJ=150 C BAS16W VR=70V, TJ=150 C BAW56W/BAV99W VR=70V, TJ=150 C BAV70W WEITRON http://www.weitron.com.tw BAS16W / BAV70W BAW56W / BAV99W Off Characteristic Characteristic Diode Capacition BAS16W/BAW56W (VR=0, f=1.0MHz) BAV70W/BAV99W Forward Voltage (IF=1.0 mAdc) (IF=10 mAdc) (IF=50 mAdc) (IF=150 mAdc) Reverse Recovery Time (Figure 1.) IF=IR=10 mAdc, VR=5.0Vdc IR(REC)=1.0 mAdc, RL=100 Symbol CD Min Max 2.0 1.5 715 855 1000 1250 6.0 Unit PF VF mVdc trr nS Device Marking Item BAS16W BAV70W BAW56W BAV99W Marking A6 A4 A1 A7 Eqivalent Circuit diagram 3 3 3 3 1 1 2 1 2 1 2 Figure 1. Recovery Time Equivalent Test Circuit 820 +10V 2.0K IF 0.1µF 100 µH D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR 0.1µF tr 10% tp t IF trr t 90% IR INPUT SIGNAL IR(REC)=1.0mA OUTPUT PULSE (IF=IR=10mA, MEASURED AT IR(REC)=1.0mA Notes:1. A 2.0 k 3. tp variable resistor for a Forward Current (IF) 0f 10 mA 2. Input pules is adjusted so IR(peak) is equal to 10 mA » trr http://www.weitron.com.tw WEITRON BAS16W / BAV70W BAW56W / BAV99W FIGURE 2 .FORWARD VOLTAGE 100 10 FIGURE 3. LEAKAGE CURRENT TA=150 C TA=125 C 1.0 TA=85 C 0.1 TA=55 C 0.01 TA=25 C 0.001 0 10 20 30 40 50 IF, FORWARD CURRENT (mA) TA=85 C TA=-40 C 10 TA=25 C 1.0 IA. REVERSE CURRENT (µA) 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VR. REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) CD. DIODE CAPACITANCE (PF) 0.64 CD. DIODE CAPACITANCE (PF) 0.68 FIGURE 4. CAPACITANCE(BAS16W) 1.00 FIGURE 5. CAPACITANCE (BAV70W) 0.90 0.60 0.80 0.56 0.70 0.52 0 2 4 6 8 0.60 0 2 4 6 8 VR. REVERSE VOLTAGE (VOLTS) VR. REVERSW VOLTAGE (VOLTS) 1.75 FIGURE 6. CAPACITANCE(BAW56W) CD. DIODE CAPACITANCE (PF) 0.68 FIGUTRE 7. CAPACITANCE (BAV99W) CD. DIODE CAPACITANCE (PF) 1.50 0.64 1.25 0.60 1.00 0.56 0.75 0 2 4 6 8 0.52 0 2 4 6 8 VR. REVERSE VOLTAGE (VOLTS) VR. REVERSE VOLTAGE (VOLTS) WEITRON http://www.weitron.com.tw