BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C
General Purpose Transistor PNP Silicon
COLLECTOR 3
3 1 2 SOT-23
MARKING DIAGRAM 3
1 BASE
2 EMITTER
1
XX = Device Code (See 2 Table Below)
Maximum Ratings ( TA=25 C unless otherwise noted)
Rating Collector-Emitter Voltage BC856 BC857 BC858,BC859 BC856 BC857 BC858,BC859 Symbol VCEO Value -65 -45 -30 -80 -50 -30 -5.0 -100 Max 225 1.8 556 300 2.4 417 -55 to +150 Unit V
Collector-Base Voltage
VCBO VEBO IC Symbol PD R θJA PD R θJA TJ,Tstg
V V mAdc Unit mW mW/ C C/W mW mW/ C C/W C
Emitter-Base VOltage Collector Current-Continuous
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board (1) (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics Off Characteristics
Collector-Emitter Breakdown Voltage (IC= -10mA) Collector-Emitter Breakdown Voltage (IC=-10 µA ,VEB=0) Collector-Base Breakdown Voltage (IC=-10 µA) Emitter-Base Breakdown Voltage (IE=-1.0 µA)
(TA=25 C Unless Otherwise noted) Symbol Characteristics
Min
Typ
Max
Unit
BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series
V(BR)CEO
-65 -45 -30 -80 -50 -30 -80 -50 -30 -5.0 -5.0 -5.0 -
-
-15 -4.0
V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
Collector Cutoff Current (VCB=-30V) ( VCB=-30V, TA=150 C)
ICBO
nA mA
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Rev A 12-Apr-05
BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C
W E IT R ON
(TA=25 C Unless Otherwise noted) Symbol Min Typ Max Unit
Electrical Characteristics On Characteristics
DC Current Gain (IC= -10uA, VCE=-5.0V)
Characteristics
(IC= -2.0mA,VCE=-5.0V)
BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C
hFE
125 220 420 -0.6 -
90 150 270 180 290 520 -0.7 -0.9 -
250 475 800 -0.3 -0.65 -0.75 -0.82
-
Collector-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA) Base-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA) Base-Emitter On Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA)
VCE(sat)
V
VBE(sat)
V
VBE(on)
V
Small-signal Characteristics
Current-Gain-Bandwidth Product (IC= -10mA, VCE= -5.0VDC, f=100MHz) Output Capacitance ( VCB= -10V, f=1.0MHz) Noise Figure (IC= -0.2mA, VCE= -5.0Vdc, Rs=2.0k Ω , f=1.0kHz, BW=200Hz) BC856, BC857, BC858 Series BC859, Series fT Cobo NF 10 4.0 100 4.5 MHz pF dB
Device Marking
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G BC858A=3J; C858B=3K; BC858C=3L; BC859B=4B; BC859C=4C
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Rev A 12-Apr-05
BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C
W E IT R ON
BC857/BC858/BC859 Series
-1.0 -0.9 V, VOLTAGE (VOLTS) TA=25 C VBE(sat)@IC/BC=10
hFE,NORMALIZED DC CURRENT GAIN
2.0 1.5 1.0 0.7 0.5 VCE=10V TA=25 C
-0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2
VBE(ON)@VCE= -10V
0.3 0.2
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 0 -0.1 -0.2
VCE(sat)@IC/BC=10 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure1.Normalized DC Current Gain
Firure2. "Saturation" And "On" Voltage
VCE, COLLECTOR- EMITTER VOLTAGE (V)
qVB, TEMPERATURE COEFFICIENT (mV/ C)
-2.0 TA=25 C -1.6
1.0 -55 C to +125 C 1.2 1.6 2.0 2.4 2.8
-1.2 IC= -10mA IC= -20mA -0.4 IC= -50mA IC= -200mA
-0.8
IC= -100mA
0
-0.02
-0.1 -1.0 IB, BASE CURRENT (mA)
-10
-20
-0.2
-1.0 -10 IC, COLLECTOR CURRENT (mA)
-100
Figure 3. Collector Saturation Region
Figure 4. Base-Emitter Temperature Coefficient
10 Cib 7.0 C,CAPACITANCE (pF) 5.0 Cob TA=25 C
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
400 300 200 150 100 80 60 40 30 20 -0.5 VCE= -10V TA= 25 C
3.0
2.0
1.0 -0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20
-30 -40
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current-Gain- Bandwidth Product
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Rev A 12-Apr-05
BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C
WE IT R ON
BC856 Series
-1.0
hFE,DC CURRENT GAIN (NORMALIZED)
VCE= -5.0V TA= 25 C V,Voltage (Volts) 2.0 1.0 0.5
TJ=25 C -0.8 VBE(sat)@IC/IB=10
-0.6 VBE@VCE=-5.0V -0.4
0.2
-0.2 VCE(sat)@IC/IB=10 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
-0.1 -0.2
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT(mA)
Figure 7. DC Current Gain
Figure 8. "ON" Voltage
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
qVB TEMPERATURE COEFFICIENT (mV/= C)
-1.0
-1.6 IC= -10mA -20mA -50mA -100mA -200mA
-1.4
-1.2
-1.8
qVB for VBE -55 C to 125 C
-0.8
-2.2
-0.4 TJ=25 C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
-2.6
-3.3 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base-Emitter Temperature Coefficient
40 TJ=25 C 20 Cib
fT, CURRENT-GAIN-BANDWIDTH PRODUCT
500
VCE=-5.0V
C. CAPACTIANCE (pF)
200 100 50
10 8.0 6.0 4.0 Cob
20
2.0 -0.1 -0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50 -100
-1.0
-10
-100
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12.Current-Gain-Bandwidth Product
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Rev A 12-Apr-05