BSS123
Power MOSFET N-Channel
3 DRAIN
SOT-23
Features:
*Low On-Resistance : 6.0 Ω *Low Input Capacitance: 20PF *Low Out put Capacitance : 9PF *Low Threshole :2.8V *Fast Switching Speed : 20ns
1 GATE 2
SOURCE
3 1 2
Application:
* DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc.
Maximum Ratings ( TA=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current (1) Power Dissipation (TA=25 C)(2) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDSS VGS ID IDM PD R θ JA TJ, Tstg Value
100 _ +20 170 680 225 556
Unit V V mA mA mW C/W C
-55 to 150
Device Marking
BSS123=SA
WEITRON
http://www.weitron.com.tw
BSS123
Electrical Characteristics
Characteristic ( TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit
Static (1)
Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Threshold Voltage VDS=VGS , ID=1.0 mA Gate-body Leakage Current VGS= 20V, VDS=0V Zero Gate Voltage Drain Current VDS=0V, VGS=100V, Tj=25 C VDS=0V, VGS=100V, Tj=125 C Static Drain-to-Source On-Resistance VGS=10V, ID=0.1A Forward Trans Conductance VDS=25V, ID=100 mA V(BR)DSS VGS (th) IGSS IDSS 100 0.8 2.8 50 15 60 6.0 V V nA uA
8.0
5.0
rDS (on)
g fs
Ω ms
-
-
Dynamic Characteristics
Input Capacitance VDS=25V, VGS=0, f=1.0 MHz Output Capacitance VDS=25V, VGS=0, f=1.0 MHz Transfer Capacitance VDG=25V, VGS=0, f=1.0 MHz Ciss Coss Crss
-
20 9.0 4.0
PF
Switching Characteristics(1)
Turn-On Delay Time Turn-Off Delay Time (VCC =30V, IC =0.28A, VGS=10V, R GS =50Ω ) td(on) td(off )
-
20 40
nS
Reverse Diode
Diode Forward On-Voltage I D =0.34A, V GS =0V VSD
-
-
1.3
V
Note:
_ _ 1. Pulse Test: Pulse Width < 300us, Duty Cycle < 2%. _ _ 2. RF-5=1.0 0.75 0.062m.
_ _
WEITRON
http://www.weitron.com.tw
BSS123
2.0 1.8 1.6 I D ,DRIAN CURRENT(A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 7V 6V 5V 4V 3V 9.0 10 Ta =25 C VGS=10V I D ,DRIAN CURRENT(A) 9V 8V
1.0 VGS=10V 0.8 -55 C 125 C 25 C
0.6
0.4
0.2
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
VDS ,DRAIN SOURCE VOLTAGE(V)
VGS ,GATE SOURCE VOLTAGE(V)
FIG.1 Ohmic Region
FIG.2 Transfer Characteristics
IDS(on) ,STATIC DRAIN-SOURCE ON-RESISTANCE
2.4 2.2 2.0 1.8 (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 - 60 - 20 + 20 + 60 + 100 + 140 VGS=10V ID =200mA
VGS(th) ,THRESHOLD VOLTAGE (NORMZLIZED)
1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 - 60 - 20 + 20 + 60 + 100 + 140 VDS=VGS ID =1.0mA
T ,TEMPERATURE( C)
T ,TEMPERATURE( C)
FIG.3 Temperature Versus Static Drain-Source On-Resistance
FIG.4 Temperature Versus Gate Threshold Voltage
WEITRON
http://www.weitron.com.tw
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