MCL4148

MCL4148/MCL4448 High-Speed Switching Diodes P b Lead(Pb)-Free Features: *Silicon Epitaxial Planner Diode *Fast Switching Diodes *500 mW Power Dissipation SMALL SIGNAL SWITCHING DIODES 150 m AMPERES 75 VOLTS Mechanical Data: *Case : MicroMELF Glass Case *Weight : Approx 0.0123 gram MICRO-MELF MICRO-MELF Outline Dimensions Unit:mm A B C MICRO-MELF Dim A B C Min 2.5 R≥ ass Gl 2.0 1.20 1.35 Max 1.8 1.30 1.35 http//www.weitron.com.tw WEITRON MCL4148/MCL4448 Maximum Ratings Characteristic Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Output Current (1) Non-Repetitive Peak Forward Surge Current @t=1.0us Power Dissipation Thermal Resistance Junction to Ambient(2) Operating and Strorage Temperature Range ( TA=25 C Unless otherwise noted) Symbol VPWM VR IO IFSM Pd R θJA TJ ,TSTG MCL4148/MCL4448 100 75 150 2.0 500 300 -65 to +175 Unit V V mA A mW K/W C Electrical Characteristics Characteristic Reverse Breakdown Voltage IR= 100uA Forward Voltage MCL4148 IF=10 mA MCL4448 IF=5 mA IF=100 mA Leakage Current VR=20V VR=75V VR=20V, Tj=150 C Junction Capacitance VR=0V, f=1MHz ( TA=25 C Unless otherwise noted) Symbol V(BR)R Min 100 Max - Unit V VF 0.62 1.0 0.72 1.0 25 5 50 4 4 V IR - nA uA uA PF Cj Trr Reverse Recovery Time IF=10 mA, IR=1mA, iR =0.1 IR , VR=6V, RL=100 Ω Note: 1.Valid Provided that device Terminals are Kept at Ambient Temperature. 2. On PC board 50 mm 50mm 1.6mm. _ WEITRON http//www.weitron.com.tw _ _ _ _ _ nS MCL4148/MCL4448 WE IT R ON Typical Characteristics (Tamb =25 C unless otherwise specified) 1000 I F , FORWARD CURRENT(mA) I F , FORWARD CURRENT(mA) 1000 MCL4148 MCL4448 100 Scattering Limit 10 100 Scattering Limit 10 1 Tj =25 C 0.1 0 0.4 0.8 1.2 1.6 2.0 1 Tj =25 C 0.1 0 0.4 0.8 1.2 1.6 2.0 VF , FORWARD VOLTAGE(V) VF , FORWARD VOLTAGE(V) FIG.1 Forward Current vs. Forward Voltage FIG.2 Forward Current vs. Forward Voltage 1000 I R , REVERSE CURRENT(nA) C j , Diode Capacitance( P F) 3.0 2.5 Tj =25 C f=1MHz TJ =25 C 100 2.0 1.5 1.0 0.5 0 Scattering Limit 10 1 1 10 VR , REVERSE VOLTAGE(V) 100 0.1 1 10 100 VR , REVERSE VOLTAGE(V) FIG.3 Reverse Current vs. Reverse Voltage FIG.4 Diode Capacitance vs. Reverse Voltage WEITRON http://www.weitron.com.tw