MUN5311DW Series Dual Bias Resistor Transistor NPN+PNP Silicon
P b Lead(Pb)-Free
1 6 5 4
Q2
R2 R1
2
R1
65
R2
4
Q1
3
1
2
3
SOT-363(SC-88)
Maximum Ratings ( TA=25˚C unless otherwise noted, common for Q1 adn Q2, -minus sign for Q1(PNP) omitted)
Rating
Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous
Symbol
VCEO VCBO IC
Value
50 50 100
Unit
Vdc Vdc mAdc
Thermal Characteristics
Characteristics(One Junction Heated)
Total Device Dissipation TA=25˚C Derate above 25˚C Thermal Resistance, Junction to Ambient
Symbol
PD
Max
187(1) 256(2) 1.5(1) 2.0(2) 670(1) 490(2)
Unit
mW mW/˚C ˚C/W
RθJA
Characteristics(Both Junctions Heated)
Total Device Dissipation TA=25˚C Derate above 25˚C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Junction and Storage, Temperature Range 1.FR-4 @ minimum pad. 2.FR-4 @ 1.0 x 1.0 inch Pad
Symbol
PD
Max
250(1) 385(2) 2.0(1) 3.0(2) 493(1) 325(2) 188(1) 208(2) -55 to +150
Unit
mW mW/ C ˚C/W ˚C/W ˚C
RθJA RθJL TJ,Tstg
Device Marking and Resistor Values
Device
MUN5311DW MUN5312DW MUN5313DW MUN5314DW MUN5315DW MUN5316DW
Marking
11 12 13 14 15 16
R1(K)
10 22 47 10 10 4.7
R2(K)
10 22 47 47 88
Device
MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW
Marking
30 31 32 33 34 35
R1(K)
1.0 2.2 4.7 4.7 22 2.2
R2(K)
1.0 2.2 4.7 47 47 47
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1/29
Rev.B 20-Jan-09
MUN5311DW Series
Electrical Characteristics
( TA=25 C Unless Otherwise noted)
WEITRON
Symbol Min Typ Max Unit
Characteristics
Off Characteristics
Collector-Base Breakdown Voltage (IC=10 uA ,IE=0) Collector-Emitter Breakdown Voltage3 (IC=2.0mA, IB =0) Collector-Base Cutoff Voltage ( VCB=50 V, IE =0) Collector-Emitter Cutoff Current ( VCE=50V, IB=0) Emitter-Base Cutoff Current (VEB=6.0V, IC=0) V(BR)CBO V(BR)CEO ICBO ICEO MUN5311DW MUN5312DW MUN5313DW MUN5314DW MUN5315DW MUN5316DW MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 V V nA nA mA
On Characteristics3
Collector-Emitter Saturation Voltage (IC =10mA, IB =0.3mA) (IC =10mA, I B =5mA) MUN5330DW/MUN5331DW (IC =10mA, IB =1mA) MUN5315DW/MUN5316DW MUN5332DW/MUN5333DW/MUN5334DW 3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% VCE(sat) 0.25 Vdc
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Rev.A 29-Dec-05
MUN5311DW Series
Electrical Characteristics
( TA=25 C Unless Otherwise noted, common for Q1 and Q2, -minus sign for Q1(PNP) omitted) (Continued)
WEITRON
Symbol Min Typ Max Unit
Characteristics
On Characteristics3
DC Current Gain ( VCE=-10V, IC =5.0mA) MUN5311DW MUN5312DW MUN5313DW MUN5314DW MUN5315DW MUN5316DW MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW MUN5311DW MUN5312DW MUN5314DW MUN5315DW MUN5316DW MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW MUN5313DW h FE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 4.9 60 100 140 140 350 350 5.0 15 30 200 150 140 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc
Output Voltage(on) ( VCC=5.0V, VB =2.5V, R =1.0kΩ )
VOL
(VCC =5.0V, VB =3.5V, RL =1.0kΩ )
Output Voltage(off ) (VCC =5.0V, VB =0.5V, RL =1.0kΩ ) (VCC =5.0V, VB =0.05V, RL =1.0kΩ ) MUN5330DW MUN5315DW (VCC =5.0V, VB =0.25V, RL =1.0kΩ ) MUN5316DW MUN5333DW 3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
VOH
Vdc
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Rev.A 29-Dec-05
MUN5311DW Series
Electrical Characteristics On Characteristics3
Input Resistor MUN5311DW MUN5312DW MUN5313DW MUN5314DW MUN5315DW MUN5316DW MUN5330DW MUN5331DW MUN5332DW MUN5333DW MUN5334DW MUN5335DW R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 0.8 0.055 0.38 0.038 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 ( TA=25 C Unless Otherwise noted)
WEITRON
Symbol Min Typ Max Unit
Characteristics
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 1.2 0.185 0.56 0.056
kΩ
Resistor Ratio MUN5311DW/MUN5312DW/MUN5313DW MUN5314DW MUN5315DW/MUN5316DW MUN5330DW/MUN5331DW/MUN5332DW MUN5333DW MUN5334DW MUN5335DW 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0 %
R1/R2
1.0 0.21 1.0 0.1 0.47 0.047
MUN531 W Series 11D
ALL MUN51 11DW SERIES DEVICES
300 250
PD , POWER DISSIPATION(mW)
200 150 100 50 0 - 50 0 RθJA=490°C/W 50 100 150
TA, AMBIENT TEMPERATURE(°C)
FIG.1 Derating Curve
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Rev.A 29-Dec-05
MUN5311DW Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 NPN TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 I C/I B = 10 TA °C 25°C 0.1 75°C 0.01 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE=10V TA =75° C 25°C -25 °C 100
0.001
0
20 40 I C, COLLECTOR CURRENT (mA)
50
10
1
10 I C, COLLECTOR CURRENT (mA)
100
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4 I C , COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C
100 75°C 10 1 0.1 0.01
25°C TA °C
Cob , CAPACITANCE (pF)
3
2
1
VO = 5 V 0 1 2 3 4 5 6 7 V in , INPUT VOLTAGE (VOLTS) 8 9 10
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10 VO=0.2V V in , INPUT VOLTAGE (VOLTS) TA °C 25°C
75°C 1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 PNP TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10
TA
°C 25°C
TA 100
°C 25°C −25°C
75°C
IC, COLLECTOR CURRENT (mA)
50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4 f = 1 MHz lE = 0 V TA = 25°C
100 10 1
75°C
25°C TA °C
Cob , CAPACITANCE (pF)
3
2
1
IC, COLLECTOR CURRENT (mA)
VO = 5 V 0
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
10
TA
°C 75°C 25°C
1
0 IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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1000
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1 NPN TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA °C 25°C 75°C hFE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA °C 25°C −25°C 100
0.1
0.01
0.001
0
20 IC, COLLECTOR CURRENT (mA)
40
50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
4 f = 1 MHz IE = 0 V TA = 25°C
100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 0.001
75°C
25°C TA °C
Cob , CAPACITANCE (pF)
3
2
1
0
VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA 10 75°C °C 25°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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1000 hFE , DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1 PNP TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 VCE = 10 V
1 TA °C
25°C
TA 100
°C
25°C
−25°C
75°C
0.01 IC, COLLECTOR CURRENT (mA)
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C
100
75°C
25°C TA °C
Cob , CAPACITANCE (pF)
3
10 1
2
1
VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Vin, INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
100 V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V TA °C 25°C 75°C
10
1
0 IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
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8/29
Rev.A 29-Dec-05
MUN5311DW Series
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1000 hFE , DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1 NPN TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 VCE = 10 V TA °C 25°C −25°C 100
1 TA 0.1 °C 25°C 75°C
0.01
0
20 40 IC, COLLECTOR CURRENT (mA)
50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 22. VCE(sat) versus IC
Figure 23. DC Current Gain
1 0.8 Cob, CAPACITANCE (pF) 0.6 0.4 0.2 0
IC, COLLECTOR CURRENT (mA)
f = 1 MHz IE = 0 V TA = 25°C
100 75°C 10 1 0.1 0.01
25°C TA °C
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA 10 °C 25°C 75°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1 PNP TRANSISTOR
1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA °C 25°C 100 −25°C
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TA
°C 75°C
25°C
0
10 20 30 IC, COLLECTOR CURRENT (mA)
40
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 27. VCE(sat) versus IC
Figure 28. DC Current Gain
1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0
IC, COLLECTOR CURRENT (mA)
f = 1 MHz lE = 0 V TA = 25°C
100 10 1
TA
°C
25°C −25°C
VO = 5 V 0 Vin, INPUT VOLTAGE (VOLTS) 10
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
100 TA 10 °C
VO = 0.2 V 25°C 75°C
V in , INPUT VOLTAGE (VOLTS)
1
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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300 TA °C 25°C 75°C hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1 NPN TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 0.1
250 200 150 100 50 0 1
VCE = 10
TA
°C 25°C
−25°C
0.01
0.001
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
2
4
6
8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA)
90 100
Figure 32. VCE(sat) versus IC
Figure 33. DC Current Gain
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25°C
100 TA IC, COLLECTOR CURRENT (mA) °C 25°C
−25°C 10
VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA °C 25°C 75°C 1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 36. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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180 hFE , DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1 PNP TRANSISTOR
VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA 75°C °C 25°C TA 25°C −25°C °C
160 140 120 100 80 60 40 20 0 1
VCE = 10 V
0.1
0.01
0.001
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
2
4
6
8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA)
80 90 100
Figure 37. VCE(sat) versus IC
Figure 38. DC Current Gain
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C
100 TA IC, COLLECTOR CURRENT (mA) °C 25°C
−25°C 10
VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA 25°C °C
75°C 1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 41. Input Voltage versus Output Current
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12/29
Rev.A 29-Dec-05
MUN5311DW Series
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1000
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C −25°C 0.01 TA = −25°C 100 25°C 75°C VCE = 10 V
0.1 25°C
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 42. VCE(sat) versus IC
Figure 43. DC Current Gain
12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C
100 10 1 0.1
75°C 25°C
Cob, CAPACITANCE (pF)
TA = −25°C
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 44. Output Capacitance
Figure 45. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C 1 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 46. Input Voltage versus Output Current
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13/29
Rev.A 29-Dec-05
MUN5311DW Series
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1000
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C −25°C 0.01 TA = −25°C 25°C VCE = 10 V
75°C
0.1 25°C
100
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 47. VCE(sat) versus IC
Figure 48. DC Current Gain
4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 75°C 10 1 0.1 TA = −25°C 25°C
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 49. Output Capacitance
Figure 50. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C 1 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 51. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5311DW Series
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1000
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C −25°C 0.01 TA = −25°C 25°C VCE = 10 V
75°C
0.1 25°C
100
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 52. VCE(sat) versus IC
Figure 53. DC Current Gain
12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 10 1 0.1
75°C 25°C
Cob, CAPACITANCE (pF)
TA = −25°C
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
1
TA = −25°C 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 56. Input Voltage versus Output Current
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15/29
Rev.A 29-Dec-05
MUN5311DW Series
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1000 VCE = 10 V
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C TA = −25°C 100 25°C
0.1 −25°C 0.01 25°C
75°C
hFE, DC CURRENT GAIN 50
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 57. VCE(sat) versus IC
Figure 58. DC Current Gain
4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C
100 10 1 0.1
75°C 25°C TA = −25°C
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 59. Output Capacitance
Figure 60. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
1
TA = −25°C 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 61. Input Voltage versus Output Current
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16/29
Rev.A 29-Dec-05
MUN5311DW Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 25°C 0.01 hFE, DC CURRENT GAIN 1000 VCE = 10 V
0.1
100 75°C 10 25°C TA = −25°C 1 1 10 IC, COLLECTOR CURRENT (mA) 100
0.001
0
5
10 15 20 25 IC, COLLECTOR CURRENT (mA)
30
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 TA = −25°C Vin, INPUT VOLTAGE (VOLTS) 75°C 25°C
10
TA = −25°C 1 75°C
25°C
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25
0.001
Figure 64. Output Current versus Input Voltage
Figure 65. Input Voltage versus Output Current
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17/29
Rev.A 29-Dec-05
MUN5311DW Series
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100
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN
0.1 25°C
10
75°C 25°C TA = −25°C VCE = 10 V
0.001
0
10 20 40 30 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 66. VCE(sat) versus IC
Figure 67. DC Current Gain
4.5 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50
100 10 1 0.1
75°C 25°C
TA = −25°C
0.01
VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 68. Output Capacitance
Figure 69. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C 1 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 70. Input Voltage versus Output Current
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WEITRON
18/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1000
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN VCE = 10 V
0.1 25°C
100 75°C 10 TA = −25°C 25°C
0.001
0
5
10 15 20 25 IC, COLLECTOR CURRENT (mA)
30
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 71. VCE(sat) versus IC
Figure 72. DC Current Gain
12 10 8 6 4 2 0 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 10 75°C 25°C 1 0.1 TA = −25°C
Cob, CAPACITANCE (pF)
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0
5
10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 73. Output Capacitance
Figure 74. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C 1 75°C
25°C
VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25
Figure 75. Input Voltage versus Output Current
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WEITRON
19/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
100
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN
0.1 25°C
10
75°C
25°C
TA = −25°C VCE = 10 V
0.001
0
10 20 40 30 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 76. VCE(sat) versus IC
Figure 77. DC Current Gain
4.5 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50
100 75°C 10 1 0.1 TA = −25°C 25°C
0.01
VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 78. Output Capacitance
Figure 79. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C 1 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 80. Input Voltage versus Output Current
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WEITRON
20/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1000
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C hFE, DC CURRENT GAIN 75°C VCE = 10 V
0.1 25°C
100
25°C 10 TA = −25°C
0.01
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 81. VCE(sat) versus IC
Figure 82. DC Current Gain
12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 10
75°C 25°C
Cob, CAPACITANCE (pF)
1 0.1 TA = −25°C
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 83. Output Capacitance
Figure 84. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C 1 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 85. Input Voltage versus Output Current
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WEITRON
21/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1000
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C −25°C 0.01 75°C VCE = 10 V
0.1 25°C
100
10
TA = −25°C
25°C
0.001
0
10 20 40 30 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 86. VCE(sat) versus IC
Figure 87. DC Current Gain
6 Cob, CAPACITANCE (pF) 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 10 1 0.1 TA = −25°C 75°C 25°C
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 88. Output Capacitance
Figure 89. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C 1 75°C
25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 90. Input Voltage versus Output Current
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WEITRON
22/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1000
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE = 10 V 75°C 100 TA = −25°C
0.1 −25°C 0.01
75°C
25°C
25°C
10
0.001
0
5
10 15 25 20 IC, COLLECTOR CURRENT (mA)
30
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 91. VCE(sat) versus IC
Figure 92. DC Current Gain
4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 10 1
75°C 25°C
TA = −25°C 0.1
0.01
VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 93. Output Capacitance
Figure 94. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
1
TA = −25°C 75°C
25°C VO = 0.2 V
0.1
0
5 10 15 20 IC, COLLECTOR CURRENT (mA)
25
Figure 95. Input Voltage versus Output Current
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WEITRON
23/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1000 VCE = 10 V 75°C 100 TA = −25°C
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C 0.1 −25°C 0.01 25°C hFE, DC CURRENT GAIN
25°C
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 96. VCE(sat) versus IC
Figure 97. DC Current Gain
8 7 Cob, CAPACITANCE (pF) 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 10 1 0.1
75°C 25°C
0.01
TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 98. Output Capacitance
Figure 99. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C 1 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 100. Input Voltage versus Output Current
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WEITRON
24/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1000
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 25°C hFE, DC CURRENT GAIN VCE = 10 V 75°C 100 TA = −25°C
0.1
25°C
0.01
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 101. VCE(sat) versus IC
Figure 102. DC Current Gain
3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 10 1 0.1 TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 75°C 25°C
Cob, CAPACITANCE (pF)
0.01
0.001
Figure 103. Output Capacitance
Figure 104. Output Current versus Input Voltage
100 Vin, INPUT VOLTAGE (VOLTS)
10 TA = −25°C 1
75°C
25°C VO = 0.2 V
0.1
0
40 10 20 30 IC, COLLECTOR CURRENT (mA)
50
Figure 105. Input Voltage versus Output Current
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WEITRON
25/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 1000 VCE = 10 V 75°C 100 TA = −25°C
0.1
75°C −25°C
25°C
0.01
25°C
10
0.001
0
5
10 15 25 20 IC, COLLECTOR CURRENT (mA)
30
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 106. VCE(sat) versus IC
Figure 107. DC Current Gain
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WEITRON
26/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1000
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1 NPN TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN VCE = 10 V 75°C 100 TA = −25°C
0.1 25°C
25°C
10
0.001
0
20 40 30 10 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 108. VCE(sat) versus IC
Figure 109. DC Current Gain
12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA)
100 10 1 0.1
75°C 25°C
Cob, CAPACITANCE (pF)
TA = −25°C
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 110. Output Capacitance
Figure 111. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS)
1
TA = −25°C 75°C 25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 112. Input Voltage versus Output Current
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WEITRON
27/29
Rev.A 29-Dec-05
MUN5311DW Series
WEITRON
1000
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1 PNP TRANSISTOR
VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN VCE = 10 V 75°C 100
0.1 25°C
TA = −25°C
25°C
10
0.001
0
10 20 40 30 IC, COLLECTOR CURRENT (mA)
50
1
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 113. VCE(sat) versus IC
Figure 114. DC Current Gain
4.5 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50
100 10 1 0.1
25°C 75°C
TA = −25°C
0.01
VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10
0.001
Figure 115. Output Capacitance
Figure 116. Output Current versus Input Voltage
10 Vin, INPUT VOLTAGE (VOLTS) 75°C
1
25°C
TA = −25°C
VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
Figure 117. Input Voltage versus Output Current
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WEITRON
28/29
Rev.A 29-Dec-05
MUN5311DW Series SOT-363 Package Outline Dimensions
A
WEITRON
Unit:mm
SOT-363
4
6
5
BC
1 2 3
D
E
H K L M
Dim A B C D E H J K L M
Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25
J
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WEITRON
29/29
Rev.A 29-Dec-05
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