SFM16MH

SFM11MH thru SFM18MH Surface Mount Standard Recovery Glass Passivated Rectifiers P b Lead(Pb)-Free Features: * Batch process design, excellent power dissipation o ers better reverse leakage current and thermal resistance. * Low pro le surface mounted application in order to optimize board space. * Tiny plastic SMD package. * High current capability. * Super fast reovery time for switching mode application. * High surge current capability. * Glass passivated chip junction. REVERSE VOLTAGE 50 TO 600 VOLTS FORWARD CURRENT 1.0 AMPERE SOD-123H Mechanical Data: * Case : Molded plastic, JEDEC SOD-123H * Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 * Polarity : Indicated by cathode band * Mounting Position : Any * Weight : 0.011 gram SOD-123H Outline Dimension B unit:mm C A SOD-123H Dim A B C H J Min 1.40 3.30 0.6 Max 1.80 3.70 0.30( T YP) 0.80( T YP) 1.00 J H H WEITRON http://www.weitron.com.tw 1/3 05-Dec-08 SFM11MH thru SFM18MH Maximum Ratings (TA=25ºC Unless Otherwise noted) Characteristics Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TA=50°C Peak Forward Surge Current, 8.3 ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) Maximum Instantaneous At 1.0A DC Maximum DC Reverse Current @TA=25 C At Rated DC Blocking Voltage @TA=100 C Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range VF IR CJ R JA TJ TSTG 0.95 5.0 100 10(TYP) 42(TYP) -65 to +175 -65 to +175 1.25 1.70 IFSM 25 Symbol VRRM VRMS VDC IF(AV ) SFM11 MH SFM12 SFM13 SFM14 SFM15 SFM16 SFM17 SFM18 MH MH MH MH MH MH MH Unit V V V A 50 35 50 100 35 100 150 70 150 200 140 200 300 280 300 1.0 400 420 400 500 560 500 600 700 600 A V uA PF C/ W C C Device Marking Item SFM11MH SFM12MH SFM13MH SFM14MH Marking S1 S2 S3 S4 Item SFM15MH SFM16MH SFM17MH SFM18MH Marking S5 S6 S6 S7 WEITRON http://www.weitron.com.tw 2/3 05-Dec-08 SFM11MH thru SFM18MH Rating and characteristic curves (SFM11MH THRU SFM18MH) 10 AVERAGE FORWARD CURRENT,(A) MH ~S FM 14 ~S FM 16 M H 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 Single Phase Half Wave 60Hz Resistive Or Inductive Load INSTANTANEOUS FORWARD CURRENT,(A) SF M1 1M H H .1 TJ=25 C Pulse Width 300us 1% Duty Cycle SF M 17 M H ~S FM 18 SF M 1.0 15 M M H .01 AMBIENT TEMPERATURE ( C) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE .001 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 PEAK FORWARD SURGE CURRENT,(A) 25 FORWARD VOLT AGE,(V) 20 FIG.1-TYPICAL FORWARD CHARACTERISTICS 15 TJ=25 C 8.3ms Single Half Sine Wave JEDEC method 50 NONINDUCTIVE 10 NONINDUCTIVE 10 5 (+) 25Vdc (approx.) () 1 NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 1 5 10 50 100 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS JUNCTION CAPACITANCE,(pF) 70 60 50 40 30 20 10 0 trr +0.5A | | | | | | | | 0 -0.25A -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) FIG.5-TYPICAL JUNCTION CAPACITANCE WEITRON http://www.weitron.com.tw 3/3 05-Dec-08