W9464G6KH
1M 4 BANKS 16 BITS DDR SDRAM
Table of Contents1.
2.
3.
4.
5.
6.
7.
8.
GENERAL DESCRIPTION ......................................................................................................... 4
FEATURES ................................................................................................................................. 4
ORDER INFORMATION ............................................................................................................. 4
KEY PARAMETERS ................................................................................................................... 5
PIN CONFIGURATION ............................................................................................................... 6
PIN DESCRIPTION..................................................................................................................... 7
BLOCK DIAGRAM ...................................................................................................................... 8
FUNCTIONAL DESCRIPTION.................................................................................................... 9
8.1
Power Up Sequence ....................................................................................................... 9
8.2
Command Function ...................................................................................................... 10
8.2.1
Bank Activate Command ........................................................................... 10
8.2.2
Bank Precharge Command........................................................................ 10
8.2.3
Precharge All Command ............................................................................ 10
8.2.4
Write Command ......................................................................................... 10
8.2.5
Write with Auto-precharge Command ........................................................ 10
8.2.6
Read Command ......................................................................................... 10
8.2.7
Read with Auto-precharge Command ....................................................... 10
8.2.8
Mode Register Set Command.................................................................... 11
8.2.9
Extended Mode Register Set Command ................................................... 11
8.2.10
No-Operation Command ............................................................................ 11
8.2.11
Burst Read Stop Command ....................................................................... 11
8.2.12
Device Deselect Command ....................................................................... 11
8.2.13
Auto Refresh Command ............................................................................ 11
8.2.14
Self Refresh Entry Command .................................................................... 12
8.2.15
Self Refresh Exit Command....................................................................... 12
8.2.16
Data Write Enable /Disable Command ...................................................... 12
8.3
Read Operation............................................................................................................. 12
8.4
Write Operation ............................................................................................................. 13
8.5
Precharge ..................................................................................................................... 13
8.6
Burst Termination.......................................................................................................... 13
8.7
Refresh Operation......................................................................................................... 13
8.8
Power Down Mode ....................................................................................................... 14
8.9
Input Clock Frequency Change during Precharge Power Down Mode ........................ 14
8.10 Mode Register Operation.............................................................................................. 14
8.10.1
Burst Length field (A2 to A0) ...................................................................... 14
8.10.2
Addressing Mode Select (A3) .................................................................... 15
8.10.3
CAS Latency field (A6 to A4) ..................................................................... 16
8.10.4
DLL Reset bit (A8) ..................................................................................... 16
8.10.5
Mode Register /Extended Mode register change bits (BA0, BA1)............. 16
Publication Release Date: Nov. 14, 2014
Revision: A02
-1-
W9464G6KH
9.
10.
11.
12.
8.10.6
Extended Mode Register field .................................................................... 16
8.10.7
Reserved field ............................................................................................ 16
OPERATION MODE ................................................................................................................. 17
9.1
Simplified Truth Table ................................................................................................... 17
9.2
Function Truth Table ..................................................................................................... 18
9.3
Function Truth Table for CKE ....................................................................................... 21
9.4
Simplified Stated Diagram ............................................................................................ 22
ELECTRICAL CHARACTERISTICS ......................................................................................... 23
10.1 Absolute Maximum Ratings .......................................................................................... 23
10.2 Recommended DC Operating Conditions .................................................................... 23
10.3 Capacitance .................................................................................................................. 24
10.4 Leakage and Output Buffer Characteristics .................................................................. 24
10.5 DC Characteristics ........................................................................................................ 25
10.6 AC Characteristics and Operating Condition ................................................................ 26
10.7 AC Test Conditions ....................................................................................................... 27
SYSTEM CHARACTERISTICS FOR DDR SDRAM ................................................................. 29
11.1 Table 1: Input Slew Rate for DQ, DQS, and DM .......................................................... 29
11.2 Table 2: Input Setup & Hold Time Derating for Slew Rate ........................................... 29
11.3 Table 3: Input/Output Setup & Hold Time Derating for Slew Rate ............................... 29
11.4 Table 4: Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate ................ 29
11.5 Table 5: Output Slew Rate Characteristics (x16 Devices only) .................................... 29
11.6 Table 6: Output Slew Rate Matching Ratio Characteristics ......................................... 30
11.7 Table 7: AC Overshoot/Undershoot Specification for Address and Control Pins ......... 30
11.8 Table 8: Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins .......... 31
11.9 System Notes:............................................................................................................... 32
TIMING WAVEFORMS ............................................................................................................. 34
12.1 Command Input Timing ................................................................................................ 34
12.2 Timing of the CLK Signals ............................................................................................ 34
12.3 Read Timing (Burst Length = 4) ................................................................................... 35
12.4 Write Timing (Burst Length = 4) .................................................................................... 36
12.5 DM, DATA MASK (W9464G6KH) ................................................................................. 37
12.6 Mode Register Set (MRS) Timing ................................................................................. 38
12.7 Extend Mode Register Set (EMRS) Timing .................................................................. 39
12.8 Auto-precharge Timing (Read Cycle, CL = 2) .............................................................. 40
12.9 Auto-precharge Timing (Read cycle, CL = 2), continued ............................................. 41
12.10 Auto-precharge Timing (Write Cycle) .......................................................................... 42
12.11 Read Interrupted by Read (CL = 2, BL = 2, 4, 8) ........................................................ 43
12.12 Burst Read Stop (BL = 8) ............................................................................................ 43
12.13 Read Interrupted by Write & BST (BL = 8) .................................................................. 44
12.14 Read Interrupted by Precharge (BL = 8) ..................................................................... 44
12.15 Write Interrupted by Write (BL = 2, 4, 8) ..................................................................... 45
12.16 Write Interrupted by Read (CL = 2, BL = 8) ................................................................ 45
12.17 Write Interrupted by Read (CL = 3, BL = 4) ................................................................ 46
12.18 Write Interrupted by Precharge (BL = 8) ..................................................................... 46
12.19 2 Bank Interleave Read Operation (CL = 2, BL = 2) ................................................... 47
Publication Release Date: Nov. 14, 2014
Revision: A02
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W9464G6KH
13.
14.
12.20 2 Bank Interleave Read Operation (CL = 2, BL = 4) ................................................... 47
12.21 4 Bank Interleave Read Operation (CL = 2, BL = 2) ................................................... 48
12.22 4 Bank Interleave Read Operation (CL = 2, BL = 4) ................................................... 48
12.23 Auto Refresh Cycle ..................................................................................................... 49
12.24 Precharge/Activate Power Down Mode Entry and Exit Timing ................................... 49
12.25 Input Clock Frequency Change during Precharge Power Down Mode Timing .......... 49
12.26 Self Refresh Entry and Exit Timing ............................................................................. 50
Package Specification ............................................................................................................... 51
REVISION HISTORY ................................................................................................................ 52
Publication Release Date: Nov. 14, 2014
Revision: A02
-3-
W9464G6KH
1. GENERAL DESCRIPTION
W9464G6KH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR
SDRAM); organized as 1M words 4 banks 16 bits. W9464G6KH delivers a data bandwidth of up to
400M words per second. To fully comply with the personal computer industrial standard, W9464G6KH
is sorted into two speed grades: -5 and -5I. The -5 and -5I is compliant to the DDR400/CL3
specification (the -5I industrial grade which is guaranteed to support -40°C ~ 85°C).
All Inputs reference to the positive edge of CLK (except for DQ, DM and CKE). The timing reference
point for the differential clock is when the CLK and CLK signals cross during a transition. Write and
Read data are synchronized with the both edges of DQS (Data Strobe).
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9464G6KH is ideal for any high
performance applications.
2. FEATURES
2.5V ± 0.2V Power Supply for DDR400
Up to 200 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and CLK )
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5 and 3
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
15.6µS Refresh interval (4K/64 mS Refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
3. ORDER INFORMATION
PART NUMBER
SPEED
SELF REFRESH
CURRENT (MAX.)
OPERATING
TEMPERATURE
W9464G6KH-5
DDR400/CL3
2 mA
0°C ~ 70°C
W9464G6KH-5I
DDR400/CL3
2 mA
-40°C ~ 85°C
Publication Release Date: Nov. 14, 2014
Revision: A02
-4-
W9464G6KH
4. KEY PARAMETERS
SYMBOL
DESCRIPTION
MIN./MAX.
CL = 2
tCK
Clock Cycle Time
CL = 2.5
CL = 3
-5/-5I
Min.
7.5 nS
Max.
10 nS
Min.
6 nS
Max.
10 nS
Min.
5 nS
Max.
10 nS
tRAS
Active to Precharge Command Period
Min.
40 nS
tRC
Active to Ref/Active Command Period
Min.
55 nS
IDD0
Operating Current: One Bank Active-Precharge
Max.
45 mA
IDD1
Operating Current: One Bank Active-Read-Precharge
Max.
55 mA
IDD2F
Precharge floating standby current
Max.
25 mA
IDD2Q
Precharge quiet standby current
Max.
25 mA
IDD4R
Burst Operation Read Current
Max.
100 mA
IDD4W
Burst Operation Write Current
Max.
95 mA
IDD5
Auto Refresh Current
Max.
60 mA
IDD6
Self Refresh Current
Max.
2 mA
Publication Release Date: Nov. 14, 2014
Revision: A02
-5-
W9464G6KH
5. PIN CONFIGURATION
VDD
1
66
VSS
DQ0
2
65
DQ15
VDDQ
3
64
VSSQ
DQ1
4
63
DQ14
DQ2
5
62
DQ13
VSSQ
6
61
VDDQ
DQ3
7
60
DQ12
DQ4
8
59
DQ11
VDDQ
9
58
VSSQ
DQ5
10
57
DQ10
DQ6
11
56
DQ9
VSSQ
12
55
VDDQ
DQ7
13
54
DQ8
NC
14
53
NC
VDDQ
15
52
VSSQ
LDQS
16
51
UDQS
NC
17
50
NC
VDD
18
49
VREF
NC
19
48
VSS
LDM
20
47
UDM
WE
21
46
CLK
CLK
CAS
22
45
RAS
23
44
CKE
CS
24
43
NC
NC
25
42
NC
BA0
26
41
A11
BA1
27
40
A9
A10/AP
28
39
A8
A0
29
38
A7
A1
30
37
A6
A2
31
36
A5
A3
32
35
A4
VDD
33
34
VSS
Publication Release Date: Nov. 14, 2014
Revision: A02
-6-
W9464G6KH
6. PIN DESCRIPTION
PIN NUMBER
PIN
NAME
FUNCTION
DESCRIPTION
Multiplexed pins for row and column address.
Row address: A0 A11.
Column address: A0 A7. (A10 is used for Auto-precharge)
28 32,
35 41
A0 A11
Address
26, 27
BA0, BA1
Bank Select
Select bank to activate during row address latch time, or
bank to read/write during column address latch time.
2, 4, 5, 7, 8, 10,
11, 13, 54, 56, 57,
59, 60, 62, 63, 65
DQ0
DQ15
Data Input/ Output
The DQ0 – DQ15 input and output data are synchronized
with both edges of DQS.
16,51
LDQS,
UDQS
Data Strobe
DQS is Bi-directional signal. DQS is input signal during write
operation and output signal during read operation. It is Edgealigned with read data, Center-aligned with write data.
24
CS
Chip Select
Disable or enable the command decoder. When command
decoder is disabled, new command is ignored and previous
operation continues.
23, 22, 21
RAS ,
Command Inputs
CAS , WE
Command inputs (along with CS ) define the command
being entered.
LDM, UDM
Write Mask
When DM is asserted “high” in burst write, the input data is
masked. DM is synchronized with both edges of DQS.
CLK,
CLK
Differential Clock
Inputs
All address and control input signals are sampled on the
crossing of the positive edge of CLK and negative edge of
CLK .
44
CKE
Clock Enable
CKE controls the clock activation and deactivation. When
CKE is low, Power Down mode, Suspend mode, or Self
Refresh mode is entered.
49
VREF
1, 18, 33
VDD
34, 48, 66
20, 47
45, 46
Reference Voltage VREF is reference voltage for inputs.
Power
Power for logic circuit inside DDR SDRAM.
VSS
Ground
Ground for logic circuit inside DDR SDRAM.
3, 9, 15, 55, 61
VDDQ
Power for I/O
Buffer
Separated power from VDD, used for output buffer, to
improve noise.
6, 12, 52, 58, 64
VSSQ
Ground for I/O
Buffer
Separated ground from VSS, used for output buffer, to
improve noise.
14, 17, 19, 25,
42, 43, 50, 53
NC
No Connection
No connection
Publication Release Date: Nov. 14, 2014
Revision: A02
-7-
W9464G6KH
7. BLOCK DIAGRAM
CLK
CLK
DLL
CLOCK
BUFFER
CKE
CONTROL
CS
SIGNAL
RAS
COMMAND
CAS
DECODER
GENERATOR
COLUMN DECODER
COLUMN DECODER
A10
ROW DECODER
ROW DECODER
WE
CELL ARRAY
BANK #0
CELL ARRAY
BANK #1
A0
MODE
REGISTER
SENSE AMPLIFIER
SENSE AMPLIFIER
ADDRESS
BUFFER
PREFETCH REGISTER
DQ
BUFFER
DATA CONTROL
CIRCUIT
DQ0
DQ15
LDQS
UDQS
LDM
UDM
COLUMN
COUNTER
COLUMN DECODER
COLUMN DECODER
ROW DECODER
REFRESH
COUNTER
ROW DECODER
A9
A11
BA1
BA0
CELL ARRAY
BANK #2
SENSE AMPLIFIER
CELL ARRAY
BANK #3
SENSE AMPLIFIER
NOTE : The cell array configuration is 4096 * 256 * 16
Publication Release Date: Nov. 14, 2014
Revision: A02
-8-
W9464G6KH
8. FUNCTIONAL DESCRIPTION
8.1 Power Up Sequence
(1)
Apply power and attempt to CKE at a low state ( 0.2V), all other inputs may be undefined
1) Apply VDD before or at the same time as VDDQ.
2) Apply VDDQ before or at the same time as VTT and VREF.
(2)
Start Clock and maintain stable condition for 200 µS (min.).
(3)
After stable power and clock, apply NOP and take CKE high.
(4)
Issue precharge command for all banks of the device.
(5)
Issue EMRS (Extended Mode Register Set) to enable DLL and establish Output Driver Type.
(6)
Issue MRS (Mode Register Set) to reset DLL and set device to idle with bit A8.
(An additional 200 cycles(min) of clock are required for DLL Lock before any executable
command applied.)
(7)
Issue precharge command for all banks of the device.
(8)
Issue two or more Auto Refresh commands.
(9)
Issue MRS-Initialize device operation with the reset DLL bit deactivated A8 to low.
CLK
CLK
Command
PREA
EMRS
tRP
MRS
2 Clock min.
PREA
2 Clock min.
AREF
tRP
AREF
tRFC
ANY
CMD
MRS
tRFC
2 Clock min.
200 Clock min.
Inputs
maintain stable
for 200 µS min.
Enable DLL
Disable DLL reset with A8 = Low
DLL reset with A8 = High
Initialization sequence after power-up
Publication Release Date: Nov. 14, 2014
Revision: A02
-9-
W9464G6KH
8.2
Command Function
8.2.1
Bank Activate Command
( RAS = “L”, CAS = “H”, WE = “H”, BA0, BA1 = Bank, A0 to A11 = Row Address)
The Bank Activate command activates the bank designated by the BA (Bank address) signal. Row
addresses are latched on A0 to A11 when this command is issued and the cell data is read out of
the sense amplifiers. The maximum time that each bank can be held in the active state is specified
as tRAS (max). After this command is issued, Read or Write operation can be executed.
8.2.2
Bank Precharge Command
( RAS = “L”, CAS = “H”, WE = “L”, BA0, BA1 = Bank, A10 = “L”, A0 to A9, A11 = Don’t Care)
The Bank Precharge command percharges the bank designated by BA. The precharged bank is
switched from the active state to the idle state.
8.2.3
Precharge All Command
( RAS = “L”, CAS = “H”, WE = “L”, BA0, BA1 = Don’t Care, A10 = “H”, A0 to A9, A11 = Don’t
Care)
The Precharge All command precharges all banks simultaneously. Then all banks are switched to
the idle state.
8.2.4
Write Command
( RAS = “H”, CAS = “L”, WE = “L”, BA0, BA1 = Bank, A10 = “L”, A0 to A7 = Column Address)
The write command performs a Write operation to the bank designated by BA. The write data are
latched at both edges of DQS. The length of the write data (Burst Length) and column access
sequence (Addressing Mode) must be in the Mode Register at power-up prior to the Write
operation.
8.2.5
Write with Auto-precharge Command
( RAS = “H”, CAS = “L”, WE = “L”, BA0, BA1 = Bank, A10 = “H”, A0 to A7 = Column Address)
The Write with Auto-precharge command performs the Precharge operation automatically after the
Write operation. This command must not be interrupted by any other commands.
8.2.6
Read Command
( RAS = “H”, CAS = “L”, WE = “H”, BA0, BA1 = Bank, A10 = “L”, A0 to A7 = Column Address)
The Read command performs a Read operation to the bank designated by BA. The read data are
synchronized with both edges of DQS. The length of read data (Burst Length), Addressing Mode
and CAS Latency (access time from CAS command in a clock cycle) must be programmed in the
Mode Register at power-up prior to the Read operation.
8.2.7
Read with Auto-precharge Command
( RAS = “H”, CAS = “L”, WE = “H”, BA0, BA1 = Bank, A10 = “H”, A0 to A7 = Column Address)
The Read with Auto-precharge command automatically performs the Precharge operation after the
Read operation.
Publication Release Date: Nov. 14, 2014
Revision: A02
- 10 -
W9464G6KH
1. READA tRAS (min) – (BL/2) x tCK
Internal precharge operation begins after BL/2 cycle from Read with Auto-precharge command.
2. tRCD(min) READA < tRAS(min) – (BL/2) x tCK
Data can be read with shortest latency, but the internal Precharge operation does not begin until
after tRAS (min) has completed.
This command must not be interrupted by any other command.
8.2.8
Mode Register Set Command
( RAS = “L”, CAS = “L”, WE = “L”, BA0 = “L”, BA1 = “L”, A0 to A11 = Register Data)
The Mode Register Set command programs the values of CAS Latency, Addressing Mode, Burst
Length and DLL reset in the Mode Register. The default values in the Mode Register after powerup are undefined, therefore this command must be issued during the power-up sequence. Also,
this command can be issued while all banks are in the idle state. Refer to the table for specific
codes.
8.2.9
Extended Mode Register Set Command
( RAS = “L”, CAS = “L”, WE = “L”, BA0 = “H”, BA1 = “L”, A0 to A11 = Register data)
The Extended Mode Register Set command can be implemented as needed for function
extensions to the standard (SDR-SDRAM). Currently the only available mode in EMRS is DLL
enable/disable, decoded by A0. The default value of the extended mode register is not defined;
therefore this command must be issued during the power-up sequence for enabling DLL. Refer to
the table for specific codes.
8.2.10 No-Operation Command
( RAS = “H”, CAS = “H”, WE = “H”)
The No-Operation command simply performs no operation (same command as Device Deselect).
8.2.11 Burst Read Stop Command
( RAS = “H”, CAS = “H”, WE = “L”)
The Burst stop command is used to stop the burst operation. This command is only valid during a
Burst Read operation.
8.2.12 Device Deselect Command
( CS = “H”)
The Device Deselect command disables the command decoder so that the RAS , CAS , WE
and Address inputs are ignored. This command is similar to the No-Operation command.
8.2.13 Auto Refresh Command
( RAS = “L”, CAS = “L”, WE = “H”, CKE = “H”, BA0, BA1, A0 to A11 = Don’t Care)
AUTO REFRESH is used during normal operation of the DDR SDRAM and is analogous to CAS–
BEFORE–RAS (CBR) refresh in previous DRAM types. This command is non persistent, so it
must be issued each time a refresh is required.
The refresh addressing is generated by the internal refresh controller. This makes the address
bits “Don’t Care” during an AUTO REFRESH command. The DDR SDRAM requires AUTO
REFRESH cycles at an average periodic interval of tREFI (maximum).
Publication Release Date: Nov. 14, 2014
Revision: A02
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W9464G6KH
To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the
absolute refresh interval is provided. A maximum of eight AUTO REFRESH commands can be
posted to any given DDR SDRAM, and the maximum absolute interval between any AUTO
REFRESH command and the next AUTO REFRESH command is 8 * tREFI.
8.2.14 Self Refresh Entry Command
( RAS = “L”, CAS = “L”, WE = “H”, CKE = “L”, BA0, BA1, A0 to A11 = Don’t Care)
The SELF REFRESH command can be used to retain data in the DDR SDRAM, even if the rest of
the system is powered down. When in the self refresh mode, the DDR SDRAM retains data
without external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH
command except CKE is disabled (LOW). The DLL is automatically disabled upon entering SELF
REFRESH, and is automatically enabled upon exiting SELF REFRESH. Any time the DLL is
enabled a DLL Reset must follow and 200 clock cycles should occur before a READ command
can be issued. Input signals except CKE are “Don’t Care” during SELF REFRESH. Since CKE is
an SSTL_2 input, VREF must be maintained during SELF REFRESH.
8.2.15 Self Refresh Exit Command
(CKE = “H”, CS = “H” or CKE = “H”, RAS = “H”, CAS = “H”)
The procedure for exiting self refresh requires a sequence of commands. First, CLK must be
stable prior to CKE going back HIGH. Once CKE is HIGH, the DDR SDRAM must have NOP
commands issued for tXSNR because time is required for the completion of any internal refresh in
progress. A simple algorithm for meeting both refresh and DLL requirements is to apply NOPs for
200 clock cycles before applying any other command.
The use of SELF REFREH mode introduces the possibility that an internally timed event can be
missed when CKE is raised for exit from self refresh mode. Upon exit from SELF REFRESH an
extra auto refresh command is recommended.
8.2.16 Data Write Enable /Disable Command
(DM = “L/H” or LDM, UDM = “L/H”)
During a Write cycle, the DM or LDM, UDM signal functions as Data Mask and can control every
word of the input data. The LDM signal controls DQ0 to DQ7 and UDM signal controls DQ8 to
DQ15.
8.3
Read Operation
Issuing the Bank Activate command to the idle bank puts it into the active state. When the Read
command is issued after tRCD from the Bank Activate command, the data is read out sequentially,
synchronized with both edges of DQS (Burst Read operation). The initial read data becomes
available after CAS Latency from the issuing of the Read command. The CAS Latency must be
set in the Mode Register at power-up.
When the Precharge Operation is performed on a bank during a Burst Read and operation, the
Burst operation is terminated.
When the Read with Auto-precharge command is issued, the Precharge operation is performed
automatically after the Read cycle then the bank is switched to the idle state. This command
cannot be interrupted by any other commands. Refer to the diagrams for Read operation.
Publication Release Date: Nov. 14, 2014
Revision: A02
- 12 -
W9464G6KH
8.4
Write Operation
Issuing the Write command after tRCD from the bank activate command. The input data is latched
sequentially, synchronizing with both edges(rising & falling) of DQS after the Write command
(Burst write operation). The burst length of the Write data (Burst Length) and Addressing Mode
must be set in the Mode Register at power-up.
When the Precharge operation is performed in a bank during a Burst Write operation, the Burst
operation is terminated.
When the Write with Auto-precharge command is issued, the Precharge operation is performed
automatically after the Write cycle, then the bank is switched to the idle state, The Write with Autoprecharge command cannot be interrupted by any other command for the entire burst data
duration.
Refer to the diagrams for Write operation.
8.5
Precharge
There are two Commands, which perform the precharge operation (Bank Precharge and
Precharge All). When the Bank Precharge command is issued to the active bank, the bank is
precharged and then switched to the idle state. The Bank Precharge command can precharge one
bank independently of the other bank and hold the unprecharged bank in the active state. The
maximum time each bank can be held in the active state is specified as tRAS (max). Therefore, each
bank must be precharged within tRAS(max) from the bank activate command.
The Precharge All command can be used to precharge all banks simultaneously. Even if banks
are not in the active state, the Precharge All command can still be issued. In this case, the
Precharge operation is performed only for the active bank and the precharge bank is then
switched to the idle state.
8.6
Burst Termination
When the Precharge command is used for a bank in a Burst cycle, the Burst operation is
terminated. When Burst Read cycle is interrupted by the Precharge command, read operation is
disabled after clock cycle of (CAS Latency) from the Precharge command. When the Burst Write
cycle is interrupted by the Precharge command, the input circuit is reset at the same clock cycle at
which the precharge command is issued. In this case, the DM signal must be asserted “high”
during tWR to prevent writing the invalided data to the cell array.
When the Burst Read Stop command is issued for the bank in a Burst Read cycle, the Burst Read
operation is terminated. The Burst read Stop command is not supported during a write burst
operation. Refer to the diagrams for Burst termination.
8.7
Refresh Operation
Two types of Refresh operation can be performed on the device: Auto Refresh and Self Refresh.
By repeating the Auto Refresh cycle, each bank in turn refreshed automatically. The Refresh
operation must be performed 4096 times (rows) within 64mS. The period between the Auto
Refresh command and the next command is specified by tRFC.
Self Refresh mode enters issuing the Self Refresh command (CKE asserted “low”) while all banks
are in the idle state. The device is in Self Refresh mode for as long as CKE held “low”. In the case
of distributed Auto Refresh commands, distributed auto refresh commands must be issued every
15.6 µS and the last distributed Auto Refresh commands must be performed within 15.6 µS before
entering the self refresh mode. After exiting from the Self Refresh mode, the refresh operation
must be performed within 15.6 µS. In Self Refresh mode, all input/output buffers are disabled,
resulting in lower power dissipation (except CKE buffer). Refer to the diagrams for Refresh
operation.
Publication Release Date: Nov. 14, 2014
Revision: A02
- 13 -
W9464G6KH
8.8
Power Down Mode
Two types of Power Down Mode can be performed on the device: Active Standby Power Down
Mode and Precharge Standby Power Down Mode.
When the device enters the Power Down Mode, all input/output buffers are disabled resulting in
low power dissipation (except CKE buffer).
Power Down Mode enter asserting CKE “low” while the device is not running a burst cycle. Taking
CKE “high” can exit this mode. When CKE goes high, a No operation command must be input at
next CLK rising edge. Refer to the diagrams for Power Down Mode.
8.9
Input Clock Frequency Change during Precharge Power Down Mode
DDR SDRAM input clock frequency can be changed under following condition:
DDR SDRAM must be in precharged power down mode with CKE at logic LOW level. After a
minimum of 2 clocks after CKE goes LOW, the clock frequency may change to any frequency
between minimum and maximum operating frequency specified for the particular speed grade.
During an input clock frequency change, CKE must be held LOW. Once the input clock frequency
is changed, a stable clock must be provided to DRAM before precharge power down mode may
be exited. The DLL must be RESET via EMRS after precharge power down exit. An additional
MRS command may need to be issued to appropriately set CL etc. After the DLL relock time, the
DRAM is ready to operate with new clock frequency.
8.10 Mode Register Operation
The mode register is programmed by the Mode Register Set command (MRS/EMRS) when all
banks are in the idle state. The data to be set in the Mode Register is transferred using the A0 to
A11 and BA0, BA1 address inputs.
The Mode Register designates the operation mode for the read or write cycle. The register is
divided into five filed: (1) Burst Length field to set the length of burst data (2) Addressing Mode
selected bit to designate the column access sequence in a Burst cycle (3) CAS Latency field to set
the assess time in clock cycle (4) DLL reset field to reset the DLL (5) Regular/Extended Mode
Register filed to select a type of MRS (Regular/Extended MRS). EMRS cycle can be implemented
the extended function (DLL enable/Disable mode).
The initial value of the Mode Register (including EMRS) after power up is undefined; therefore the
Mode Register Set command must be issued before power operation.
8.10.1 Burst Length field (A2 to A0)
This field specifies the data length for column access using the A2 to A0 pins and sets the Burst
Length to be 2, 4 and 8 words.
A2
A1
A0
BURST LENGTH
0
0
0
Reserved
0
0
1
2 words
0
1
0
4 words
0
1
1
8 words
1
x
x
Reserved
Publication Release Date: Nov. 14, 2014
Revision: A02
- 14 -
W9464G6KH
8.10.2 Addressing Mode Select (A3)
The Addressing Mode can be one of two modes; Interleave mode or Sequential Mode, When the
A3 bit is “0”, Sequential mode is selected. When the A3 bit is “1”, Interleave mode is selected. Both
addressing Mode support burst length 2, 4 and 8 words.
A3
ADDRESSING MODE
0
Sequential
1
Interleave
8.10.2.1. Addressing Sequence of Sequential Mode
A column access is performed by incrementing the column address input to the device. The
address is varied by the Burst Length as the following.
Addressing Sequence of Sequential Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
n
2 words (address bits is A0)
Data 1
n+1
not carried from A0 to A1
Data 2
n+2
4 words (address bit A0, A1)
Data 3
n+3
Not carried from A1 to A2
Data 4
n+4
Data 5
n+5
8 words (address bits A2, A1 and A0)
Data 6
n+6
Not carried from A2 to A3
Data 7
n+7
8.10.2.2. Addressing Sequence for Interleave Mode
A Column access is started from the inputted column address and is performed by interleaving the
address bits in the sequence shown as the following.
Addressing Sequence of Interleave Mode
DATA
ACCESS ADDRESS
Data 0
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 1
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 2
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 3
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 4
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 5
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 6
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 7
A8 A7 A6 A5 A4 A3 A2 A1 A0
BURST LENGTH
2 words
4 words
8 words
Publication Release Date: Nov. 14, 2014
Revision: A02
- 15 -
W9464G6KH
8.10.3 CAS Latency field (A6 to A4)
This field specifies the number of clock cycles from the assertion of the Read command to the first
data read. The minimum values of CAS Latency depend on the frequency of CLK.
A6
A5
A4
CAS LATENCY
0
0
0
Reserved
0
0
1
Reserved
0
1
0
2
0
1
1
3
1
0
0
Reserved
1
0
1
Reserved
1
1
0
2.5
1
1
1
Reserved
8.10.4 DLL Reset bit (A8)
This bit is used to reset DLL. When the A8 bit is "1", DLL is reset.
8.10.5 Mode Register /Extended Mode register change bits (BA0, BA1)
These bits are used to select MRS/EMRS.
BA1
BA0
A11-A0
0
0
Regular MRS Cycle
0
1
Extended MRS Cycle
1
x
Reserved
8.10.6 Extended Mode Register field
1) DLL Switch field (A0)
This bit is used to select DLL enable or disable
A0
DLL
0
Enable
1
Disable
2) Output Driver Strength Control field (A6, A1)
The 100%, 60% and 30% or matched impedance driver strength are required Extended Mode
Register Set (EMRS) as the following:
A6
A1
BUFFER STRENGTH
0
0
100% Strength
0
1
60% Strength
1
0
Reserved
1
1
30% Strength
8.10.7 Reserved field
Test mode entry bit (A7)
This bit is used to enter Test mode and must be set to "0" for normal operation.
Reserved bits (A9, A10, A11)
These bits are reserved for future operations. They must be set to "0" for normal operation.
Publication Release Date: Nov. 14, 2014
Revision: A02
- 16 -
W9464G6KH
9. OPERATION MODE
The following table shows the operation commands.
9.1
Simplified Truth Table
SYM.
COMMAND
DEVICE
STATE
CKEn-1 CKEn
DM(4)
BA0,
BA1
A10
A0-A9
,A11
CS
RAS
CAS
WE
ACT
Bank Active
Idle(3)
H
X
X
V
V
V
L
L
H
H
PRE
Bank Precharge
Any(3)
H
X
X
V
L
X
L
L
H
L
PREA
Precharge All
Any
H
X
X
X
H
X
L
L
H
L
WRIT
Write
Active(3)
H
X
X
V
L
V
L
H
L
L
WRITA
Write with Autoprecharge
Active(3)
H
X
X
V
H
V
L
H
L
L
READ
Read
Active(3)
H
X
X
V
L
V
L
H
L
H
READA
Read with Autoprecharge
Active(3)
H
X
X
V
H
V
L
H
L
H
Mode Register Set
Idle
H
X
X
L, L
C
C
L
L
L
L
EMRS
Extended Mode
Register Set
Idle
H
X
X
H, L
V
V
L
L
L
L
NOP
No Operation
Any
H
X
X
X
X
X
L
H
H
H
BST
Burst Read Stop
Active
H
X
X
X
X
X
L
H
H
L
DSL
Device Deselect
Any
H
X
X
X
X
X
H
X
X
X
AREF
Auto Refresh
Idle
H
H
X
X
X
X
L
L
L
H
SELF
Self Refresh
Entry
Idle
H
L
X
X
X
X
L
L
L
H
SELEX
Self Refresh Exit
Idle (Self
Refresh)
L
H
X
X
X
X
PD
Power Down
Mode Entry
Idle/
Active(5)
H
L
X
X
X
X
PDEX
Power Down
Mode Exit
Any
(Power
Down)
L
H
X
X
X
X
MRS
H
X
X
X
L
H
H
X
H
X
X
X
L
H
H
X
H
X
X
X
L
H
H
X
WDE
Data Write Enable
Active
H
X
L
X
X
X
X
X
X
X
WDD
Data Write Disable
Active
H
X
H
X
X
X
X
X
X
X
Notes
1. V = Valid
X = Don’t Care
L = Low level
H = High level
2. CKEn signal is input level when commands are issued.
CKEn-1 signal is input level one clock cycle before the commands are issued.
3. These are state designated by the BA0, BA1 signals.
4. LDM, UDM (W9464G6KH).
5. Power Down Mode can not entry in the burst cycle.
Publication Release Date: Nov. 14, 2014
Revision: A02
- 17 -
W9464G6KH
9.2
Function Truth Table
(Note 1)
CURRENT
STATE
Idle
Row Active
Read
Write
CS
RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
X
X
X
DSL
NOP
L
H
H
X
X
NOP/BST
NOP
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
Row activating
L
L
H
L
BA, A10
PRE/PREA
NOP
L
L
L
H
X
AREF/SELF
Refresh or Self refresh
2
L
L
L
L
Op-Code
MRS/EMRS
Mode register accessing
2
H
X
X
X
X
DSL
NOP
L
H
H
X
X
NOP/BST
NOP
L
H
L
H
BA, CA, A10
READ/READA
Begin read: Determine AP
4
L
H
L
L
BA, CA, A10
WRIT/WRITA
Begin write: Determine AP
4
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
Precharge
5
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
Burst stop
L
H
L
H
BA, CA, A10
READ/READA
Term burst, new read: Determine AP
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE/PREA
Term burst, precharging
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
Term burst, start read: Determine AP
6, 7
L
H
L
L
BA, CA, A10
WRIT/WRITA
Term burst, start read: Determine AP
6
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
Term burst, precharging
8
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
6
3
Publication Release Date: Nov. 14, 2014
Revision: A02
- 18 -
W9464G6KH
Function Truth Table, continued
CURRENT
STATE
Read with
Autoprecharge
Write with
Autoprecharge
Precharging
Row
Activating
CS
RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
X
X
X
DSL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
3
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
NOP-> Idle after tRP
L
H
H
H
X
NOP
NOP-> Idle after tRP
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
Idle after tRP
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
NOP-> Row active after tRCD
L
H
H
H
X
NOP
NOP-> Row active after tRCD
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
3
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
Publication Release Date: Nov. 14, 2014
Revision: A02
- 19 -
W9464G6KH
Function Truth Table, continued
CURRENT
STATE
Write
Recovering
Write
Recovering
with Autoprecharge
Refreshing
Mode
Register
Accessing
CS
RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
X
X
X
DSL
NOP->Row active after tWR
L
H
H
H
X
NOP
NOP->Row active after tWR
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
3
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
NOP->Enter precharge after tWR
L
H
H
H
X
NOP
NOP->Enter precharge after tWR
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
3
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
NOP->Idle after tRC
L
H
H
H
X
NOP
NOP->Idle after tRC
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
X
READ/WRIT
ILLEGAL
L
L
H
X
X
ACT/PRE/PREA
ILLEGAL
L
L
L
X
X
AREF/SELF/MRS/EMRS
ILLEGAL
H
X
X
X
X
DSL
NOP->Row after tMRD
L
H
H
H
X
NOP
NOP->Row after tMRD
L
H
H
L
X
BST
ILLEGAL
L
H
L
X
X
READ/WRIT
ILLEGAL
L
L
X
X
X
ACT/PRE/PREA/ARE
F/SELF/MRS/EMRS
ILLEGAL
Notes
1. All entries assume that CKE was active (High level) during the preceding clock cycle and the current clock cycle.
2. Illegal if any bank is not idle.
3. Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA), depending on the
state of that bank.
4. Illegal if tRCD is not satisfied.
5. Illegal if tRAS is not satisfied.
6. Must satisfy burst interrupt condition.
7. Must avoid bus contention, bus turn around, and/or satisfy write recovery requirements.
8. Must mask preceding data which don’t satisfy tWR
Remark: H = High level, L = Low level, X = High or Low level (Don’t Care), V = Valid data
Publication Release Date: Nov. 14, 2014
Revision: A02
- 20 -
W9464G6KH
9.3
Function Truth Table for CKE
CURRENT
STATE
Self Refresh
Power Down
All banks Idle
Row Active
Any State
Other Than
Listed Above
CKE
CS
RAS
CAS
WE
ADDRESS
X
X
X
X
X
X
INVALID
L
H
H
X
X
X
X
Exit Self Refresh->Idle after tXSNR
L
H
L
H
H
X
X
Exit Self Refresh->Idle after tXSNR
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
Maintain Self Refresh
H
X
X
X
X
X
X
INVALID
L
H
X
X
X
X
X
Exit Power down->Idle after tIS
L
L
X
X
X
X
X
Maintain power down mode
H
H
X
X
X
X
X
Refer to Function Truth Table
H
L
H
X
X
X
X
Enter Power down
2
H
L
L
H
H
X
X
Enter Power down
2
H
L
L
L
L
H
X
Self Refresh
1
H
L
L
H
L
X
X
ILLEGAL
H
L
L
L
X
X
X
ILLEGAL
n-1
n
H
ACTION
NOTES
L
X
X
X
X
X
X
Power down
H
H
X
X
X
X
X
Refer to Function Truth Table
H
L
H
X
X
X
X
Enter Power down
3
H
L
L
H
H
X
X
Enter Power down
3
H
L
L
L
L
H
X
ILLEGAL
H
L
L
H
L
X
X
ILLEGAL
H
L
L
L
X
X
X
ILLEGAL
L
X
X
X
X
X
X
Power down
H
H
X
X
X
X
X
Refer to Function Truth Table
Notes
1. Self refresh can enter only from the all banks idle state.
2. Power Down occurs when all banks are idle; this mode is referred to as precharge power down.
3. Power Down occurs when there is a row active in any bank; this mode is referred to as active power down.
Remark: H = High level, L = Low level, X = High or Low level (Don’t Care), V = Valid data
Publication Release Date: Nov. 14, 2014
Revision: A02
- 21 -
W9464G6KH
9.4
Simplified Stated Diagram
SELF
REFRESH
SREF
SREFX
MRS/EMRS
MODE
REGISTER
SET
AREF
IDLE
AUTO
REFRESH
PD
PDEX
ACT
POWER
DOWN
ACTIVE
POWERDOWN
PDEX
PD
ROW
ACTIVE
Write
BST
Read
Write
Read
Read
Write
Read
Read A
Write A
Read A
Write A
Read A
PRE
Write A
POWER
APPLIED
POWER
ON
PRE
PRE
PRE
Read A
PRE
CHARGE
Automatic Sequence
Command Sequence
Publication Release Date: Nov. 14, 2014
Revision: A02
- 22 -
W9464G6KH
10. ELECTRICAL CHARACTERISTICS
10.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
VIN, VOUT
-0.5 ~ VDDQ +0.5
V
Voltage on Input Pins Relative to VSS
VIN
-1 ~ 3.6
V
Voltage on VDD Supply Relative to VSS
VDD
-1 ~ 3.6
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
-1 ~ 3.6
V
Operating Temperature (-5)
TOPR
0 ~ 70
°C
Operating Temperature (-5I)
TOPR
-40 ~ 85
°C
Storage Temperature
TSTG
-55 ~ 150
°C
TSOLDER
260
°C
PD
1
W
IOUT
50
mA
Voltage on I/O Pins Relative to VSS
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
10.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for -5, TA = -40 to 85°C for -5I)
SYM.
PARAMETER
MIN.
TYP.
MAX.
UNIT
NOTES
VDD
Power Supply Voltage (for -5/-5I)
2.3
2.5
2.7
V
2
VDDQ
I/O Buffer Supply Voltage (for -5/-5I)
2.3
2.5
2.7
V
2
VREF
Input reference Voltage
0.49 x VDDQ
0.50 x VDDQ
0.51 x VDDQ
V
2, 3
VTT
Termination Voltage (System)
VREF - 0.04
VREF
VREF + 0.04
V
2, 8
VIH (DC)
Input High Voltage (DC)
VREF + 0.15
-
VDDQ + 0.3
V
2
VIL (DC)
Input Low Voltage (DC)
-0.3
-
VREF - 0.15
V
2
Differential Clock DC Input Voltage
-0.3
-
VDDQ + 0.3
V
15
0.36
-
VDDQ + 0.6
V
13, 15
VICK (DC)
VID (DC)
Input Differential Voltage.
CLK and CLK inputs (DC)
VIH (AC)
Input High Voltage (AC)
VREF + 0.31
-
-
V
2
VIL (AC)
Input Low Voltage (AC)
-
-
VREF - 0.31
V
2
0.7
-
VDDQ + 0.6
V
13, 15
Differential AC input Cross Point Voltage
VDDQ/2 - 0.2
-
VDDQ/2 + 0.2
V
12, 15
Differential Clock AC Middle Point
VDDQ/2 - 0.2
-
VDDQ/2 + 0.2
V
14, 15
VID (AC)
VX (AC)
VISO (AC)
Input Differential Voltage.
CLK and CLK inputs (AC)
Notes: VIH (DC) and VIL (DC) are levels to maintain the current logic state.
VIH (AC) and VIL (AC) are levels to change to the new logic state.
Publication Release Date: Nov. 14, 2014
Revision: A02
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W9464G6KH
10.3 Capacitance
(VDD = VDDQ = 2.5V ± 0.2V, f = 1 MHz, TA = 25°C, VOUT (DC) = VDDQ/2, VOUT (Peak to Peak) = 0.2V)
SYMBOL
CIN
PARAMETER
MIN.
MAX.
DELTA
(MAX.)
UNIT
Input Capacitance (except for CLK pins)
2.0
3.0
0.5
pF
CCLK
Input Capacitance (CLK pins)
2.0
3.0
0.25
pF
CI/O
DQ, DQS, DM Capacitance
4.0
5.0
0.5
pF
-
1.5
-
pF
CNC
NC Pin Capacitance
Notes: These parameters are periodically sampled and not 100% tested.
The NC pins have additional capacitance for adjustment of the adjacent pin capacitance.
10.4 Leakage and Output Buffer Characteristics
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
II (L)
Input Leakage Current
Any input 0V VIN VDD, VREF Pin 0V VIN 1.35V
(All other pins not under test = 0V)
-2
2
µA
IO (L)
Output Leakage Current
(Output disabled, 0V VOUT VDDQ)
-5
5
µA
VOH
Output High Voltage
(under AC test load condition)
VTT +0.76
-
V
VOL
Output Low Voltage
(under AC test load condition)
-
VTT -0.76
V
IOH
Output Levels: Full drive option
High Current
(VOUT = VDDQ - 0.373V, min. VREF, min. VTT
-15
-
mA
4, 6
IOL
Low Current
(VOUT = 0.373V, max. VREF, max. VTT)
15
-
mA
4, 6
IOHR
Output Levels: Reduced drive option - 60%
High Current
(VOUT = VDDQ - 0.763V, min. VREF, min. VTT
-9
-
mA
5
IOLR
Low Current
(VOUT = 0.763V, max. VREF, max. VTT)
9
-
mA
5
NOTES
IOHR(30)
Output Levels: Reduced drive option - 30%
High Current
(VOUT = VDDQ – 1.056V, min. VREF, min. VTT
-4.5
-
mA
5
IOLR(30)
Low Current
(VOUT = 1.056V, max. VREF, max. VTT)
4.5
-
mA
5
Publication Release Date: Nov. 14, 2014
Revision: A02
- 24 -
W9464G6KH
10.5 DC Characteristics
SYM.
MAX.
-5/-5I
PARAMETER
UNIT
NOTES
IDD0
Operating current: One Bank Active-Precharge;
tRC = tRC min; tCK = tCK min;
DQ, DM and DQS inputs changing once per clock cycle;
Address and control inputs changing once every two clock cycles
45
7
IDD1
Operating current: One Bank Active-Read-Precharge;
Burst = 4; tRC = tRC min; CL = 3; tCK = tCK min; IOUT = 0 mA;
Address and control inputs changing once per clock cycle
55
7, 9
IDD2P
Precharge Power Down standby current:
All Banks Idle; Power down mode;
CKE ≤ VIL max; tCK = tCK min; Vin = VREF for DQ, DQS and DM
5
Idle standby current:
IDD2N
CS ≥ VIH min; All Banks Idle; CKE ≥ VIH min; tCK = tCK min;
Address and other control inputs changing once per clock cycle;
Vin ≥ VIH min or Vin ≤ VIL max for DQ, DQS and DM
25
Idle floating standby current:
IDD2F
CS ≥ VIH min; All Banks Idle; CKE ≥ VIH min;
Address and other control inputs changing once per clock cycle;
Vin = VREF for DQ, DQS and DM
25
7
25
7
Idle quiet standby current:
IDD2Q
IDD3P
CS ≥ VIH min; All Banks Idle; CKE ≥ VIH min;
Address and other control inputs stable at > VIH min or VIL max;
Vin ≥ VREF for DQ, DQS and DM
Active Power Down standby current:
One Bank Active; Power down mode;
CKE ≤ VIL max; tCK = tCK min
15
mA
Vin = VREF for DQ, DQS and DM
Active standby current:
IDD3N
CS ≥ VIH min; CKE ≥ VIH min; One Bank Active-Precharge;
tRC = tRAS max; tCK = tCK min;
DQ, DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per clock cycle
30
7
IDD4R
Operating current:
Burst = 2; Reads; Continuous burst; One Bank Active;
Address and control inputs changing once per clock cycle;
CL=2; tCK = tCK min; IOUT = 0mA
100
7, 9
IDD4W
Operating current:
Burst = 2; Write; Continuous burst; One Bank Active;
Address and control inputs changing once per clock cycle;
CL = 2; tCK = tCK min;
DQ, DM and DQS inputs changing twice per clock cycle
95
7
Auto Refresh current: tRC = tRFC min
60
7
Self Refresh current: CKE ≤ 0.2V; external clock on; tCK = tCK min
2
IDD5
IDD6
IDD7
Random Read current: 4 Banks Active Read with activate every 20nS,
Auto-Precharge Read every 20 nS;
Burst = 4; tRCD = 3; IOUT = 0mA;
DQ, DM and DQS inputs changing twice per clock cycle;
Address changing once per clock cycle
110
Publication Release Date: Nov. 14, 2014
Revision: A02
- 25 -
W9464G6KH
10.6 AC Characteristics and Operating Condition
SYM.
-5/-5I
PARAMETER
MIN.
55
70
40
15
15
1
15
10
15
(tWR/tCK) +
(tRP/tCK)
7.5
6
5
MAX.
tRC
tRFC
tRAS
tRCD
tRAP
tCCD
tRP
tRRD
tWR
Active to Ref/Active Command Period
Ref to Ref/Active Command Period
Active to Precharge Command Period
Active to Read/Write Command Delay Time
Active to Read with Auto-precharge Enable
Read/Write(a) to Read/Write(b) Command Period
Precharge to Active Command Period
Active(a) to Active(b) Command Period
Write Recovery Time
tDAL
Auto-precharge Write Recovery + Precharge Time
tCK
CLK Cycle Time
tAC
Data Access Time from CLK, CLK
-0.7
0.7
tDQSCK
DQS Output Access Time from CLK, CLK
-0.6
0.6
tDQSQ
tCH
tCL
tHP
tQH
tRPRE
tRPST
tDS
tDH
tDIPW
tDQSH
tDQSL
tDSS
tDSH
tWPRES
tWPRE
tWPST
tDQSS
tIS
tIH
tIS
tIH
tIPW
Data Strobe Edge to Output Data Edge Skew
CLk High Level Width
CLK Low Level Width
CLK Half Period (minimum of actual tCH, tCL)
DQ Output Data Hold Time from DQS
DQS Read Preamble Time
DQS Read Postamble Time
DQ and DM Setup Time
DQ and DM Hold Time
DQ and DM Input Pulse Width (for each input)
DQS Input High Pulse Width
DQS Input Low Pulse Width
DQS Falling Edge to CLK Setup Time
DQS Falling Edge Hold Time from CLK
Clock to DQS Write Preamble Set-up Time
DQS Write Preamble Time
DQS Write Postamble Time
Write Command to First DQS Latching Transition
Input Setup Time (fast slew rate)
Input Hold Time (fast slew rate)
Input Setup Time (slow slew rate)
Input Hold Time (slow slew rate)
Control & Address Input Pulse Width (for each input)
CL = 2
CL = 2.5
CL = 3
0.45
0.45
Min. (tCL,tCH)
tHP-0.5
0.9
0.4
0.4
0.4
1.75
0.35
0.35
0.2
0.2
0
0.25
0.4
0.72
0.6
0.6
0.7
0.7
2.2
70000
NOTES
nS
tCK
nS
tCK
18
nS
16
10
10
10
0.4
0.55
0.55
16
tCK
11
11
nS
1.1
0.6
tCK
11
11
nS
tCK
11
11
11
11
nS
0.6
1.25
tCK
11
11
11
19, 21-23
19, 21-23
20-23
20-23
nS
tHZ
Data-out High-impedance Time from CLK, CLK
tLZ
Data-out Low-impedance Time from CLK, CLK
-0.7
0.7
SSTL Input Transition
Internal Write to Read Command Delay
Exit Self Refresh to non-Read Command
Exit Self Refresh to Read Command
Refresh Time (4K/64mS)
Mode Register Set Cycle Time
0.5
2
75
200
1.5
tT(SS)
tWTR
tXSNR
tXSRD
tREFI
tMRD
UNIT
0.7
15.6
10
tCK
nS
tCK
µS
nS
17
Publication Release Date: Nov. 14, 2014
Revision: A02
- 26 -
W9464G6KH
10.7 AC Test Conditions
PARAMETER
SYMBOL
VALUE
UNIT
Input High Voltage (AC)
VIH
VREF + 0.31
V
Input Low Voltage (AC)
VIL
VREF - 0.31
V
Input Reference Voltage
VREF
0.5 x VDDQ
V
Termination Voltage
VTT
0.5 x VDDQ
V
Differential Clock Input Reference Voltage
VR
Vx (AC)
V
VID (AC)
1.5
V
VOTR
0.5 x VDDQ
V
Input Difference Voltage. CLK and CLK Inputs (AC)
Output Timing Measurement Reference Voltage
VTT
VDDQ
VIH min (AC)
V SWING (MAX)
VREF
50 Ω
VIL max (AC)
VSS
T
T
Output
Output
V(out)
30pF
SLE W = (VIH min (AC) - VILmax (AC)) / T
Timing Reference Load
Notes:
(1)
(2)
(3)
(4)
(5)
(6)
Conditions outside the limits listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
All voltages are referenced to VDD, VDDQ.
Peak to peak AC noise on VREF may not exceed ±2% VREF(DC).
VOH = 1.95V, VOL = 0.35V
VOH = 1.9V, VOL = 0.4V
The values of IOH(DC) is based on VDDQ = 2.3V and VTT = 1.19V.
The values of IOL(DC) is based on VDDQ = 2.3V and VTT = 1.11V.
(7)
These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values
of tCK and tRC.
(8)
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors is expected to be set
equal to VREF and must track variations in the DC level of VREF.
(9)
These parameters depend on the output loading. Specified values are obtained with the output open.
(10) Transition times are measured between VIH min(AC) and VIL max(AC).Transition (rise and fall) of input signals have a fixed
slope.
(11) IF the result of nominal calculation with regard to tCK contains more than one decimal place, the result is rounded up to
the nearest decimal place.
(i.e., tDQSS = 1.25 tCK, tCK = 5 nS, 1.25 5 nS = 6.25 nS is rounded up to 6.2 nS.)
(12) VX is the differential clock cross point voltage where input timing measurement is referenced.
(13) VID is magnitude of the difference between CLK input level and CLK input level.
(14) VISO means {VICK(CLK)+VICK( CLK )}/2.
(15) Refer to the figure below.
Publication Release Date: Nov. 14, 2014
Revision: A02
- 27 -
W9464G6KH
CLK
VX
VX
VX
VICK
VX
VICK
VX
VID(AC)
CLK
VICK
VICK
VSS
VID(AC)
0 V Differential
VISO
VISO(min)
VISO(max)
VSS
(16) tAC and tDQSCK depend on the clock jitter. These timing are measured at stable clock.
(17) A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
(18) tDAL = (tWR/tCK) + (tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For -5 speed grade at CL=2.5 and tCK=6 nS
tDAL = ((15 nS / 6 nS) + (15 nS / 6 nS)) clocks = ((3) + (3)) clocks = 6 clocks
(19) For command/address input slew rate ≥1.0 V/nS.
(20) For command/address input slew rate ≥0.5 V/nS and
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