W97BH6KB / W97BH2KB
LPDDR2-S4B 2Gb
Table of Contents1.
GENERAL DESCRIPTION ............................................................................................................................................ 6
2.
FEATURES .................................................................................................................................................................... 6
3.
ORDER INFORMATION ................................................................................................................................................ 7
4.
4.1
4.2
PIN CONFIGURATION .................................................................................................................................................. 8
134 Ball VFBGA ............................................................................................................................................................. 8
168 Ball WFBGA ............................................................................................................................................................ 9
5.1
5.2
PIN DESCRIPTION ..................................................................................................................................................... 10
Basic Functionality ....................................................................................................................................................... 10
Addressing Table ......................................................................................................................................................... 11
5.
6.
BLOCK DIAGRAM ....................................................................................................................................................... 12
7.
FUNCTIONAL DESCRIPTION..................................................................................................................................... 13
Simplified LPDDR2 State Diagram .............................................................................................................................. 13
7.1
7.1.1
7.2
Simplified LPDDR2 Bus Interface State Diagram ......................................................................................................... 14
Power-up, Initialization, and Power-Off ........................................................................................................................ 15
7.2.1
7.2.2
7.2.3
7.2.4
7.2.5
7.2.6
7.2.7
7.3
Power Ramp and Device Initialization.......................................................................................................................... 15
Timing Parameters for Initialization .............................................................................................................................. 17
Power Ramp and Initialization Sequence .................................................................................................................... 17
Initialization after Reset (without Power ramp) ............................................................................................................. 18
Power-off Sequence .................................................................................................................................................... 18
Timing Parameters Power-Off ..................................................................................................................................... 18
Uncontrolled Power-Off Sequence .............................................................................................................................. 18
Mode Register Definition .............................................................................................................................................. 19
7.3.1
7.3.1.1
7.3.2
7.3.3
7.3.3.1
7.3.3.2
7.3.4
7.3.5
7.3.6
7.3.7
7.3.8
7.3.9
7.3.10
7.3.11
7.3.12
7.3.13
7.3.14
7.3.15
7.3.16
7.3.17
7.4
Mode Register Assignment and Definition ................................................................................................................... 19
Mode Register Assignment ............................................................................................................................... 19
MR0_Device Information (MA[7:0] = 00H) ................................................................................................................... 20
MR1_Device Feature 1 (MA[7:0] = 01H) ...................................................................................................................... 20
Burst Sequence by Burst Length (BL), Burst Type (BT), and Warp Control (WC) .............................................. 21
Non Wrap Restrictions ...................................................................................................................................... 21
MR2_Device Feature 2 (MA[7:0] = 02H) ...................................................................................................................... 22
MR3_I/O Configuration 1 (MA[7:0] = 03H) ................................................................................................................... 22
MR4_Device Temperature (MA[7:0] = 04H) ................................................................................................................. 22
MR5_Basic Configuration 1 (MA[7:0] = 05H) ............................................................................................................... 23
MR6_Basic Configuration 2 (MA[7:0] = 06H) ............................................................................................................... 23
MR7_Basic Configuration 3 (MA[7:0] = 07H) ............................................................................................................... 23
MR8_Basic Configuration 4 (MA[7:0] = 08H) ............................................................................................................... 23
MR9_Test Mode (MA[7:0] = 09H) ................................................................................................................................ 23
MR10_Calibration (MA[7:0] = 0AH) ............................................................................................................................. 24
MR16_PASR_Bank Mask (MA[7:0] = 10H) .................................................................................................................. 24
MR17_PASR_Segment Mask (MA[7:0] = 11H)............................................................................................................ 25
MR32_DQ Calibration Pattern A (MA[7:0] = 20H) ........................................................................................................ 25
MR40_DQ Calibration Pattern B (MA[7:0] = 28H) ........................................................................................................ 25
MR63_Reset (MA[7:0] = 3FH): MRW only ................................................................................................................... 25
Command Definitions and Timing Diagrams ................................................................................................................ 26
7.4.1
7.4.1.1
7.4.1.2
7.4.1.3
7.4.1.4
7.4.2
7.4.3
7.4.3.1
7.4.3.2
Activate Command ...................................................................................................................................................... 26
Activate Command Cycle: tRCD = 3, tRP = 3, tRRD = 2 ................................................................................... 26
tFAW Timing ..................................................................................................................................................... 27
Command Input Setup and Hold Timing............................................................................................................ 27
CKE Input Setup and Hold Timing .................................................................................................................... 28
Read and Write Access Modes.................................................................................................................................... 28
Burst Read Command ................................................................................................................................................. 28
Data Output (Read) Timing (tDQSCKmax) ........................................................................................................ 29
Data Output (Read) Timing (tDQSCKmin)......................................................................................................... 30
Publication Release Date: Apr. 28, 2016
Revision: A01-001
-1-
W97BH6KB / W97BH2KB
7.4.3.3
7.4.3.4
7.4.3.5
7.4.3.6
7.4.3.7
7.4.3.8
7.4.3.9
7.4.4
7.4.4.1
7.4.5
7.4.5.1
7.4.5.2
7.4.5.3
7.4.5.4
7.4.6
7.4.6.1
7.4.7
7.4.7.1
7.4.7.2
7.4.8
7.4.8.1
7.4.9
7.4.9.1
7.4.10
7.4.10.1
7.4.10.2
7.4.11
7.4.11.1
7.4.12
7.4.13
7.4.13.1
7.4.14
7.4.14.1
7.4.14.2
7.4.15
7.4.15.1
7.4.16
7.4.16.1
7.4.16.2
7.4.16.3
7.4.16.4
7.4.16.5
7.4.16.6
7.4.16.7
7.4.17
7.4.18
7.4.19
7.4.20
7.4.20.1
7.4.20.2
7.4.20.3
7.4.21
7.4.21.1
7.4.21.2
7.4.21.3
7.4.22
Burst Read: RL = 5, BL = 4, tDQSCK > tCK ...................................................................................................... 30
Burst Read: RL = 3, BL = 8, tDQSCK < tCK ...................................................................................................... 31
LPDDR2: tDQSCKDL Timing ............................................................................................................................ 31
LPDDR2: tDQSCKDM Timing ........................................................................................................................... 32
LPDDR2: tDQSCKDS Timing............................................................................................................................ 32
Burst Read Followed by Burst Write: RL = 3, WL = 1, BL = 4 ............................................................................ 33
Seamless Burst Read: RL = 3, BL= 4, tCCD = 2 ............................................................................................... 33
Reads Interrupted by a Read....................................................................................................................................... 34
Read Burst Interrupt Example: RL = 3, BL= 8, tCCD = 2 ................................................................................... 34
Burst Write Operation .................................................................................................................................................. 34
Data Input (Write) Timing .................................................................................................................................. 35
Burst Write: WL = 1, BL= 4 ............................................................................................................................... 35
Burst Wirte Followed by Burst Read: RL = 3, WL= 1, BL= 4 .............................................................................. 36
Seamless Burst Write: WL= 1, BL = 4, tCCD = 2............................................................................................... 36
Writes Interrupted by a Write ....................................................................................................................................... 37
Write Burst Interrupt Timing: WL = 1, BL = 8, tCCD = 2 .................................................................................... 37
Burst Terminate ........................................................................................................................................................... 37
Burst Write Truncated by BST: WL = 1, BL = 16 ............................................................................................... 38
Burst Read Truncated by BST: RL = 3, BL = 16 ................................................................................................ 38
Write Data Mask .......................................................................................................................................................... 39
Write Data Mask Timing .................................................................................................................................... 39
Precharge Operation ................................................................................................................................................... 40
Bank Selection for Precharge by Address Bits .................................................................................................. 40
Burst Read Operation Followed by Precharge ............................................................................................................. 40
Burst Read Followed by Precharge: RL = 3, BL = 8, RU(tRTP(min)/tCK) = 2 .................................................... 41
Burst Read Followed by Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 3 .................................................... 41
Burst Write Followed by Precharge ............................................................................................................................. 42
Burst Write Follwed by Precharge: WL = 1, BL = 4............................................................................................ 42
Auto Precharge Operation ........................................................................................................................................... 43
Burst Read with Auto-Precharge ................................................................................................................................. 43
Burst Read with Auto-Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 2 ........................................................ 43
Burst Write with Auto-Precharge.................................................................................................................................. 44
Burst Write with Auto-Precharge: WL = 1, BL = 4 .............................................................................................. 44
Precharge & Auto Precharge Clarification ......................................................................................................... 45
Refresh Command ...................................................................................................................................................... 46
Command Scheduling Separations Related to Refresh ..................................................................................... 47
LPDDR2 SDRAM Refresh Requirements .................................................................................................................... 47
Definition of tSRF .............................................................................................................................................. 48
Regular, Distributed Refresh Pattern ................................................................................................................. 50
Allowable Transition from Repetitive Burst Refresh ........................................................................................... 50
NOT-Allowable Transition from Repetitive Burst Refresh .................................................................................. 51
Recommended Self-Refresh Entry and Exit ...................................................................................................... 51
All Bank Refresh Operation............................................................................................................................... 52
Per Bank Refresh Operation ............................................................................................................................. 52
Self Refresh Operation ................................................................................................................................................ 53
Partial Array Self-Refresh: Bank Masking .................................................................................................................... 54
Partial Array Self-Refresh: Segment Masking .............................................................................................................. 54
Mode Register Read Command .................................................................................................................................. 55
Mode Register Read Timing Example: RL = 3, tMRR = 2.................................................................................. 56
Read to MRR Timing Example: RL = 3, tMRR = 2 ............................................................................................ 57
Burst Write Followed by MRR: RL = 3, WL = 1, BL = 4 ..................................................................................... 57
Temperature Sensor.................................................................................................................................................... 58
Temperature Sensor Timing ............................................................................................................................. 59
DQ Calibration .................................................................................................................................................. 59
MR32 and MR40 DQ Calibration Timing Example: RL = 3, tMRR = 2 ............................................................... 60
Mode Register Write Command................................................................................................................................... 61
Publication Release Date: Apr. 28, 2016
Revision: A01-001
-2-
W97BH6KB / W97BH2KB
7.4.22.1
7.4.22.2
7.4.23
7.4.24
7.4.24.1
7.4.24.2
7.4.24.3
7.4.24.4
7.4.24.5
7.4.25
7.4.25.1
7.4.25.2
7.4.25.3
7.4.25.4
7.4.25.5
7.4.25.6
7.4.25.7
7.4.25.8
7.4.25.9
7.4.25.10
7.4.25.11
7.4.25.12
7.4.26
7.4.26.1
7.4.27
7.4.28
7.5
Truth Tables ................................................................................................................................................................. 72
7.5.1
7.5.2
7.5.3
7.5.4
7.5.5
8.
8.1
8.2
Mode Register Write Timing Example: RL = 3, tMRW = 5 ................................................................................. 61
Truth Table for Mode Register Read (MRR) and Mode Register Write (MRW) .................................................. 61
Mode Register Write Reset (MRW Reset) ................................................................................................................... 62
Mode Register Write ZQ Calibration Command ........................................................................................................... 62
ZQ Calibration Initialization Timing Example ..................................................................................................... 63
ZQ Calibration Short Timing Example ............................................................................................................... 63
ZQ Calibration Long Timing Example ................................................................................................................ 64
ZQ Calibration Reset Timing Example .............................................................................................................. 64
ZQ External Resistor Value, Tolerance, and Capacitive Loading ...................................................................... 65
Power-Down................................................................................................................................................................ 65
Basic Power Down Entry and Exit Timing ......................................................................................................... 65
CKE Intensive Environment .............................................................................................................................. 66
Refresh to Refresh Timing with CKE Intensive Environment ............................................................................. 66
Read to Power-Down Entry............................................................................................................................... 67
Read with Auto Precharge to Power-Down Entry .............................................................................................. 67
Write to Power-Down Entry ............................................................................................................................... 68
Write with Auto Precharge to Power-Down Entry .............................................................................................. 68
Refresh Command to Power-Down Entry.......................................................................................................... 69
Activate Command to Power-Down Entry ......................................................................................................... 69
Precharge/Precharge-All Command to Power-Down Entry ............................................................................... 69
Mode Register Read to Power-Down Entry ....................................................................................................... 70
MRW Command to Power-Down Entry ............................................................................................................. 70
Deep Power-Down ...................................................................................................................................................... 70
Deep Power Down Entry and Exit Timing.......................................................................................................... 71
Input Clock Stop and Frequency Change .................................................................................................................... 71
No Operation Command .............................................................................................................................................. 72
Command Truth Table................................................................................................................................................. 73
CKE Truth Table.......................................................................................................................................................... 74
Current State Bank n - Command to Bank n Truth Table ............................................................................................. 75
Current State Bank n - Command to Bank m Truth Table ............................................................................................ 77
Data Mask Truth Table ................................................................................................................................................ 78
ELECTRICAL CHARACTERISTIC .............................................................................................................................. 79
Absolute Maximum DC Ratings ................................................................................................................................... 79
AC & DC Operating Conditions .................................................................................................................................... 79
8.2.1
8.2.1.1
8.2.2
8.2.3
8.2.4
8.2.4.1
8.2.4.1.1
8.2.4.1.2
8.2.4.1.3
8.2.4.2
8.2.4.2.1
8.2.4.3
8.2.4.3.1
8.2.4.4
8.2.4.4.1
8.2.4.4.2
8.2.4.5
8.2.4.6
8.2.4.7
8.2.4.8
Recommended DC Operating Conditions .................................................................................................................... 79
Recommended DC Operating Conditions ......................................................................................................... 79
Input Leakage Current ................................................................................................................................................. 80
Operating Temperature Conditions .............................................................................................................................. 80
AC and DC Input Measurement Levels ........................................................................................................................ 80
AC and DC Logic Input Levels for Single-Ended Signals................................................................................... 80
Single-Ended AC and DC Input Levels for CA and CS_n Inputs ....................................................................... 80
Single-Ended AC and DC Input Levels for CKE ................................................................................................ 81
Single-Ended AC and DC Input Levels for DQ and DM ..................................................................................... 81
Vref Tolerances ................................................................................................................................................ 81
VRef(DC) Tolerance and VRef AC-Noise Limits................................................................................................ 82
Input Signal....................................................................................................................................................... 83
LPDDR2-800/1066 Input Signal ........................................................................................................................ 83
AC and DC Logic Input Levels for Differential Signals ....................................................................................... 84
Differential Signal Definition .............................................................................................................................. 84
Differential swing requirements for clock (CK_t - CK_c) and strobe (DQS_t - DQS_c) ...................................... 84
Single-Ended Requirements for Differential Signals .......................................................................................... 85
Differential Input Cross Point Voltage ................................................................................................................ 86
Slew Rate Definitions for Single-Ended Input Signals ....................................................................................... 87
Slew Rate Definitions for Differential Input Signals ............................................................................................ 87
Publication Release Date: Apr. 28, 2016
Revision: A01-001
-3-
W97BH6KB / W97BH2KB
8.2.5
8.2.5.1
8.2.5.2
8.2.5.3
8.2.5.4
8.2.5.5
8.2.6
8.2.6.1
8.2.6.2
8.2.6.3
8.2.6.4
8.2.6.5
8.2.6.6
8.2.6.7
8.3
IDD Specification Parameters and Test Conditions ..................................................................................................... 98
8.3.1
8.3.2.1
IDD Measurement Conditions ...................................................................................................................................... 98
Definition of Switching for CA Input Signals ...................................................................................................... 98
Definition of Switching for IDD4R ...................................................................................................................... 99
Definition of Switching for IDD4W ..................................................................................................................... 99
IDD Specifications ..................................................................................................................................................... 100
LPDDR2 IDD Specification Parameters and Operating Conditions, -40°C~85°C (x16, x32) ............................. 100
8.3.2.2
IDD6 Partial Array Self-Refresh Current, -40°C~85°C (x16, x32) ..................................................................... 102
8.3.1.1
8.3.1.2
8.3.1.3
8.3.2
8.4
Clock Specification..................................................................................................................................................... 102
8.4.1
8.4.2
8.4.3
8.4.4
8.4.5
8.4.6
8.4.7
8.4.8
8.5
Definition for tCK(avg) and nCK................................................................................................................................. 102
Definition for tCK(abs) ............................................................................................................................................... 102
Definition for tCH(avg) and tCL(avg) .......................................................................................................................... 103
Definition for tJIT(per) ................................................................................................................................................ 103
Definition for tJIT(cc) ................................................................................................................................................. 103
Definition for tERR(nper) ........................................................................................................................................... 103
Definition for duty Dycle Jitter tJIT(duty) .................................................................................................................... 104
Definition for tCK(abs), tCH(abs) and tCL(abs) .......................................................................................................... 104
Period Clock Jitter ...................................................................................................................................................... 104
8.5.1
8.5.1.1
8.5.1.2
8.5.2
8.5.3
8.5.3.1
8.5.3.2
8.5.3.3
8.5.3.4
8.5.4
8.5.4.1
8.5.4.2
8.5.4.3
8.6
Clock Period Jitter Effects on Core Timing Parameters ............................................................................................. 104
Cycle Time De-rating for Core Timing Parameters .......................................................................................... 104
Clock Cycle De-rating for Core Timing Parameters ......................................................................................... 105
Clock Jitter Effects on Command/Address Timing Parameters .................................................................................. 105
Clock Jitter Effects on Read tTiming Parameters ....................................................................................................... 105
tRPRE ............................................................................................................................................................ 105
tLZ(DQ), tHZ(DQ), tDQSCK, tLZ(DQS), tHZ(DQS) ......................................................................................... 105
tQSH, tQSL..................................................................................................................................................... 105
tRPST ............................................................................................................................................................. 106
Clock Jitter Effects on Write Timing Parameters ........................................................................................................ 106
tDS, tDH ......................................................................................................................................................... 106
tDSS, tDSH..................................................................................................................................................... 106
tDQSS ............................................................................................................................................................ 106
Refresh Requirements ............................................................................................................................................... 107
8.6.1
8.7
AC and DC Output Measurement Levels ..................................................................................................................... 88
Single Ended AC and DC Output Levels ........................................................................................................... 88
Differential AC and DC Output Levels ............................................................................................................... 88
Single Ended Output Slew Rate ........................................................................................................................ 88
Differential Output Slew Rate ............................................................................................................................ 90
Overshoot and Undershoot Specifications ........................................................................................................ 91
Output buffer Characteristics ....................................................................................................................................... 92
HSUL_12 Driver Output Timing Reference Load ............................................................................................... 92
RONPU and RONPD Resistor Definition .............................................................................................................. 92
RONPU and RONPD Characteristics with ZQ Calibration ..................................................................................... 93
Output Driver Temperature and Voltage Sensitivity ........................................................................................... 93
RONPU and RONPD Characteristics without ZQ Calibration ................................................................................ 94
RZQ I-V Curve .................................................................................................................................................. 95
Input/Output Capacitance ................................................................................................................................. 97
Refresh Requirement Parameters ............................................................................................................................. 107
AC Timings ................................................................................................................................................................ 108
8.7.1
8.7.2
8.7.2.1
8.7.2.2
8.7.2.3
8.7.2.4
8.7.2.5
LPDDR2 AC Timing .................................................................................................................................................. 108
CA and CS_n Setup, Hold and Derating .................................................................................................................... 113
CA and CS_n Setup and Hold Base-Values for 1V/nS .................................................................................... 113
Derating Values LPDDR2 tIS/tIH - AC/DC Based AC220 ................................................................................ 114
Required Time tVAC above VIH(ac) {below VIL(ac)} for Valid Transition......................................................... 114
Nominal Slew Rate and tVAC for Setup Time tIS for CA and CS_n with Respect to Clock .............................. 115
Nominal Slew Rate for Hold Time tIH for CA and CS_n with Respect to Clock ................................................ 116
Publication Release Date: Apr. 28, 2016
Revision: A01-001
-4-
W97BH6KB / W97BH2KB
8.7.2.6
8.7.2.7
8.7.3
8.7.3.1
8.7.3.2
8.7.3.3
8.7.3.4
8.7.3.5
8.7.3.6
8.7.3.7
Tangent Line for Setup Time tIS for CA and CS_n with Respect to Clock ....................................................... 117
Tangent Line for Hold Time tIH for CA and CS_n with Respect to Clock ......................................................... 118
Data Setup, Hold and Slew Rate Derating ................................................................................................................. 119
Data Setup and Hold Base-Values .................................................................................................................. 119
Derating Values LPDDR2 tDS/tDH - AC/DC Based AC220 ............................................................................. 120
Required Time tVAC above VIH(ac) {below VIL(ac)} for Valid Transition......................................................... 120
Nominal Slew Rate and tVAC for Setup Time tDS for DQ with Respect to Strobe ........................................... 121
Nominal Slew Rate for Hold time tDH for DQ with Respect to Strobe .............................................................. 122
Tangent Line for Setup Time tDS for DQ with Respect to Strobe .................................................................... 123
Tangent Line for Hold Time tDH for DQ with Respect to Strobe ...................................................................... 124
9.
PACKAGE DIMENSIONS .......................................................................................................................................... 125
10.
REVISION HISTORY ................................................................................................................................................. 127
Publication Release Date: Apr. 28, 2016
Revision: A01-001
-5-
W97BH6KB / W97BH2KB
1. GENERAL DESCRIPTION
LPDDR2 is a high-speed SDRAM device internally configured as an 8-Bank memory. These devices contains 2 Gb
has 2,147,483,648 bits.
All LPDDR2 devices use a double data rate architecture on the Command/Address (CA) bus to reduce the number
of input pins in the system. The 10-bit CA bus contains command, address, and Bank/Row Buffer information. Each
command uses one clock cycle, during which command information is transferred on both the positive and negative
edge of the clock.
For LPDDR2 devices, accesses begin with the registration of an Activate command, which is then followed by a
Read or Write command. The address and BA bits registered coincident with the Activate command are used to
select the row and the Bank to be accessed. The address bits registered coincident with the Read or Write command
are used to select the Bank and the starting column location for the burst access.
2. FEATURES
VDD1 = 1.7~1.95V
Data mask (DM) for write data
VDD2/VDDCA/VDDQ = 1.14V~1.30V
Clock Stop capability during idle periods
Data width: x16 / x32
Double data rate for data output
Clock rate: up to 533 MHz
Differential clock inputs
Data rate: up to 1066 Mb/s/pin
Bidirectional differential data strobe
Four-bit prefetch DDR architecture
Interface: HSUL_12
Eight internal banks for concurrent operation
JEDEC LPDDR2-S4B compliance
Programmable READ and WRITE latencies (RL/WL)
Support package:
Programmable burst lengths: 4, 8, or 16
Single channel: 134 VFBGA (10mm x11.5mm)
Per Bank Refresh
Single channel: 168 WFBGA (12mm x12mm)
Partial Array Self-Refresh(PASR)
Operating Temperature Range:
Deep Power Down Mode (DPD Mode)
-25°C ≤ TCASE ≤ 85°C
Programmable output buffer driver strength
-40°C ≤ TCASE ≤ 85°C
Publication Release Date: Apr. 28, 2016
Revision: A01-001
-6-
W97BH6KB / W97BH2KB
3. ORDER INFORMATION
Part Number
VDD1/VDD2/VDDQ
I/O Width
Package
Others
W97BH6KBQX2I
1.8V/1.2V/1.2V
16
168WFBGA
400MHz, -40°C~85°C
W97BH6KBQX2E
1.8V/1.2V/1.2V
16
168WFBGA
400MHz, -25°C~85°C
W97BH2KBQX2I
1.8V/1.2V/1.2V
32
168WFBGA
400MHz, -40°C~85°C
W97BH2KBQX2E
1.8V/1.2V/1.2V
32
168WFBGA
400MHz, -25°C~85°C
W97BH6KBQX1I
1.8V/1.2V/1.2V
16
168WFBGA
533MHz, -40°C~85°C
W97BH6KBQX1E
1.8V/1.2V/1.2V
16
168WFBGA
533MHz, -25°C~85°C
W97BH2KBQX1I
1.8V/1.2V/1.2V
32
168WFBGA
533MHz, -40°C~85°C
W97BH2KBQX1E
1.8V/1.2V/1.2V
32
168WFBGA
533MHz, -25°C~85°C
W97BH6KBVX2I
1.8V/1.2V/1.2V
16
134VFBGA
400MHz, -40°C~85°C
W97BH6KBVX2E
1.8V/1.2V/1.2V
16
134VFBGA
400MHz, -25°C~85°C
W97BH2KBVX2I
1.8V/1.2V/1.2V
32
134VFBGA
400MHz, -40°C~85°C
W97BH2KBVX2E
1.8V/1.2V/1.2V
32
134VFBGA
400MHz, -25°C~85°C
W97BH6KBVX1I
1.8V/1.2V/1.2V
16
134VFBGA
533MHz, -40°C~85°C
W97BH6KBVX1E
1.8V/1.2V/1.2V
16
134VFBGA
533MHz, -25°C~85°C
W97BH2KBVX1I
1.8V/1.2V/1.2V
32
134VFBGA
533MHz, -40°C~85°C
W97BH2KBVX1E
1.8V/1.2V/1.2V
32
134VFBGA
533MHz, -25°C~85°C
Publication Release Date: Apr. 28, 2016
Revision: A01-001
-7-
W97BH6KB / W97BH2KB
4. PIN CONFIGURATION
4.1 134 Ball VFBGA
1
2
3
9
10
A
DNU
DNU
DNU
DNU
A
B
DNU
NC
NC
VDD2
VDD1
DQ31
NC
DQ29
NC
DQ26
NC
DNU
B
C
VDD1
VSS
NC
VSS
VSSQ
VDDQ
DQ25
NC
VSSQ
VDDQ
C
D
VSS
VDD2
ZQ0
VDDQ
DQ30
NC
DQ27
NC
DQS3_t
NC
DQS3_c
NC
VSSQ
D
E
VSSCA
CA9
CA8
DQ28
NC
DQ24
NC
DM3
NC
DQ15
VDDQ
VSSQ
E
F
VDDCA
CA6
CA7
VSSQ
DQ11
DQ13
DQ14
DQ12
VDDQ
F
G
VDD2
CA5
Vref (CA)
DQS1_c
DQS1_t
DQ10
DQ9
DQ8
VSSQ
G
H
VDDCA
VSS
CK_c
DM1
VDDQ
J
VSSCA
NC
CK_t
VSSQ
VDDQ
K
CKE0
NC
NC
DM0
VDDQ
L
CS0_n
NC
NC
DQS0_c
DQS0_t
DQ5
DQ6
DQ7
VSSQ
L
LPDDR2 DQ
M
CA4
CA3
CA2
VSSQ
DQ4
DQ2
DQ1
DQ3
VDDQ
M
LPDDR2 CA
N
VSSCA
VDDCA
CA1
DQ19
NC
DQ23
NC
DM2
NC
DQ0
VDDQ
VSSQ
N
Power
P
VSS
VDD2
CA0
VDDQ
DQ17
NC
DQ20
NC
DQS2_t
NC
DQS2_c
NC
VSSQ
P
Ground
R
VDD1
VSS
NC
VSS
VSSQ
VDDQ
DQ22
NC
VSSQ
VDDQ
R
Do Not Use
/NC
T
DNU
NC
NC
VDD2
VDD1
DQ16
NC
DQ18
NC
DQ21
NC
DNU
T
ZQ
U
DNU
DNU
DNU
DNU
U
Clock
1
2
9
10
3
4
4
5
5
6
6
7
8
Ball Definition where
2 labe's are present
1st Row
2nd Row
x32 device
x16 device
H
VDD2
VSS
J
Vref (DQ)
K
7
8
[Top View]
Publication Release Date: Apr. 28, 2016
Revision: A01-001
-8-
W97BH6KB / W97BH2KB
4.2
168 Ball WFBGA
168Ball WFBGA
21
22
23
VSSQ DQS3_c VDD1
VSS
NC
NC
DM3
VDD2
NC
NC
VDD2
DQ15
VSSQ
NC
NC
VDDQ
DQ14
NC
NC
DQ12
DQ13
F
NC
VSS
DQ11
VSSQ
G
NC
NC
VDDQ
DQ10
H
NC
NC
DQ8
DQ9
J
NC
VSS
DQS1_t VSSQ
K
NC
NC
VDDQ DQS1_c
NC
C
VSS
D
E
VSSQ
DQ26
DQ25
DQ27
VDDQ
DQ24
DQS3_t VDDQ
VSSQ
DQ30
DQ29
DQ31
VDDQ
DQ28
NC
NC
VDD1
NC
VSS
VDD2
NC
NC
VSS
VDD1
NC
VSS
NC
NC
NC
NC
NC
B
NC
NC
NC
A
19
17
15
12
18
16
14
11
NC
7
13
10
9
6
4
2
8
5
3
1
20
L
NC
NC
VDD2
DM1
M
NC
VSS
Vref(DQ)
VSS
N
NC
VDD1
VDD1
DM0
DQS0_c VSSQ
P
ZQ
Vref(CA)
R
VSS
VDD2
VDDQ DQS0_t
T
CA9
CA8
DQ6
DQ7
U
CA7
VDDCA
DQ5
VSSQ
V
VSSCA
CA6
VDDQ
DQ4
W
CA5
VDDCA
DQ2
DQ3
Y
CK_c
CK_t
DQ1
VSSQ
AA
VSS
VDD2
VDDQ
DQ0
AB
NC
NC
CS_n
NC
VDD1
CA1
VSSCA
CA3
CA4
VDD2
VSS
DQ16
VDDQ
DQ18
DQ20
VDDQ
DQ22
DQS2_t VDDQ
DM2
VDD2
NC
NC
AC
NC
NC
CKE
NC
VSS
CA0
CA2
VDDCA
VSS
NC
NC
VSSQ
DQ17
DQ19
VSSQ
DQ21
DQ23
VSSQ DQS2_c VDD1
VSS
NC
NC
[Top View]
Note: x16: DQ16~DQ31,DM2,DM3,DQS2_t,DQS2_c, DQS3_t & DQS3_c is NC.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
-9-
W97BH6KB / W97BH2KB
5. PIN DESCRIPTION
5.1 Basic Functionality
Name
CK_t, CK_c
Type
Description
Input
Clock: CK_t and CK_c are differential clock inputs. All Double Data Rate (DDR) CA inputs are sampled on both
positive and negative edge of CK_t. Single Data Rate (SDR) inputs, CS_n and CKE, are sampled at the positive
Clock edge.
Clock is defined as the differential pair, CK_t and CK_c. The positive Clock edge is defined by the crosspoint of a
rising CK_t and a falling CK_c. The negative Clock edge is defined by the crosspoint of a falling CK_t and a rising
CK_c.
Clock Enable: CKE HIGH activates and CKE LOW deactivates internal clock signals and therefore device input
CKE
Input
CS_n
Input
CA[n:0]
Input
DQ[n:0]
I/O
buffers and output drivers. Power savings modes are entered and exited through CKE transitions.
CKE is considered part of the command code. See 7.5.1 “Command Truth Table” for command code
descriptions.
CKE is sampled at the positive Clock edge.
Chip Select: CS_n is considered part of the command code. See 7.5.1 “Command Truth Table” for
command code descriptions.
CS_n is sampled at the positive Clock edge.
DDR Command/Address Inputs: Uni-directional command/address bus inputs.
CA is considered part of the command code. See 7.5.1 “Command Truth Table” for command code
descriptions.
Data Inputs/Output: Bi-directional data bus. n=15 for 16 bits DQ; n=31 for 32 bits DQ.
Data Strobe (Bi-directional, Differential):
DQSn_t,
DQSn_c
I/O
The data strobe is bi-directional (used for read and write data) and differential (DQS_t and DQS_c). It is output
with read data and input with write data. DQS_t is edge-aligned to read data and centered with write data.
For x16, DQS0_t and DQS0_c correspond to the data on DQ0-7; DQS1_t and DQS1_c to the data on DQ8-15.
For x32 DQS0_t and DQS0_c correspond to the data on DQ0-7; DQS1_t and DQS1_c to the data on DQ8-15;
DQS2_t and DQS2_c to the data on DQ16-23; DQS3_t and DQS3_c to the data on DQ24-31.
Input Data Mask:
DM is the input mask signal for write data. Input data is masked when DM is sampled HIGH coincident with that
input data during a Write access. DM is sampled on both edges of DQS_t. Although DM is for input only, the DM
loading shall match the DQ and DQS (or DQS_c).
DM0 is the input data mask signal for the data on DQ0-7.
For x16 and x32 devices, DM1 is the input data mask signal for the data on DQ8-15.
For x32 devices, DM2 is the input data mask signal for the data on DQ16-23 and DM3 is the input data mask
signal for the data on DQ24-31.
DMn
Input
VDD1
Supply
Core Power Supply 1: Power supply for core.
VDD2
Supply
Core Power Supply 2: Power supply for core.
VDDCA
Supply
Input Receiver Power Supply: Power supply for CA[n:0], CKE, CS_n, CK_t, and CK_c input buffers.
VDDQ
Supply
I/O Power Supply: Power supply for Data input/output buffers.
VREF(CA)
Supply
VREF(DQ)
Supply
Reference Voltage for DQ Input Receiver: Reference voltage for all Data input buffers.
VSS
Supply
Ground
VSSCA
Supply
Ground for CA Input Receivers
VSSQ
Supply
I/O Ground
ZQ
I/O
Reference Voltage for CA Command and Control Input Receiver: Reference voltage for all
CA[n:0], CKE, CS_n, CK_t, and CK_c input buffers.
Reference Pin for Output Drive Strength Calibration
Note: Data includes DQ and DM.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 10 -
W97BH6KB / W97BH2KB
5.2
Addressing Table
Density
2Gb
Number of Banks
8
Bank Addresses
BA0-BA2
Row Addresses
R0-R13
Column Addresses*1
C0-C9
Row Addresses
R0-R13
Column Addresses*1
C0-C8
x16
x32
Notes:
1. The least-significant column address C0 is not transmitted on the CA bus, and is implied to be zero.
2. Row and Column Address values on the CA bus that are not used are “don’t care”.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 11 -
W97BH6KB / W97BH2KB
6. BLOCK DIAGRAM
CK_c
CK_t
CLOCK
BUFFER
CKE
CONTROL
SIGNAL
COMMAND
COLUMN DECODER
GENERATOR
R
O
W
DECODER
CA0
MODE
REGISTER
CA9
ADDRESS
D
E
C
O
R
D
E
R
CELL ARRAY
BANK #7
BANK #0
BUFFER
SENSE AMPLIFIER
Power
GND
ZQ
REFRESH
COUNTER
COLUMN
COUNTER
DATA CONTROL
CIRCUIT
DQ
BUFFER
DQ , DQS_t ,
DQS_c
DM
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 12 -
W97BH6KB / W97BH2KB
7. FUNCTIONAL DESCRIPTION
LPDDR2-S4 devices use a double data rate architecture on the DQ pins to achieve high speed operation. The
double data rate architecture is essentially a 4n prefetch architecture with an interface designed to transfer two data
bits per DQ every clock cycle at the I/O pins. A single read or write access for the LPDDR2-S4 effectively consists of
a single 4n-bit-wide, one-clock-cycle data transfer at the internal SDRAM core and four corresponding n-bit-wide,
one-half-clock-cycle data transfers at the I/O pins.
Read and write accesses are burst oriented; accesses start at a selected location and continue for a programmed
number of locations in a programmed sequence.
Prior to normal operation, the LPDDR2 device must be initialized. The following section provides detailed information
covering device initialization, register definition, command description and device operation.
7.1
Simplified LPDDR2 State Diagram
LPDDR2-SDRAM state diagram provides a simplified illustration of allowed state transitions and the related
commands to control them. For a complete definition of the device behavior, the information provided by the state
diagram should be integrated with the truth tables and timing specification.
The truth tables provide complementary information to the state diagram, they clarify the device behavior and the
applied restrictions when considering the actual state of all the banks.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 13 -
W97BH6KB / W97BH2KB
7.1.1
Simplified LPDDR2 Bus Interface State Diagram
Power
Applied
Resetting
MR
Reading
DPDX
Power
On
Reset
Deep
Power
Down
Automatic Sequence
Command Sequence
MRR
Resetting
DPD
PD
PDX
Resetting
Power
Down
Self
Refreshing
SREF
SREFX
Reset
Idle
MR
Reading
MRR
REF
Idle
MRW
PDX
MR
Writing
Active
Power
Down
ACT
PD
Idle
Power
Down
MRR
PDX
Refreshing
Active
MR
Reading
PR,PRA
PD
Active*1
BST
RD
WR
WR
Writing
RDA
WRA
PR(A)=Precharge (All)
ACT=Activate
WR(A)=Write(with Autoprecharge)
RD(A)=Read (with Autoprecharge)
BST=Burst Terminate
Reset=Reset is achieved through MRW command
MRW=Mode Register Write
MRR=Mode Register Read
PD=Enter Power Down
PDX=Exit Power Down
SREF=Enter Self Refresh
SREFX=Exit Self Refresh
DPD=Enter Deep Power Down
DPDX=Exit Deep Power Down
REF=Refresh
RD
Reading
WRA
Writing
With
Autoprecharge
BST
RDA
PR,PRA
Reading
With
Autoprecharge
Precharging
Note: For LPDDR2-SDRAM in the Idle state, all banks are precharged.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 14 -
W97BH6KB / W97BH2KB
7.2
Power-up, Initialization, and Power-Off
The LPDDR2 Devices must be powered up and initialized in a predefined manner. Operational procedures other
than those specified may result in undefined operation.
7.2.1
Power Ramp and Device Initialization
The following sequence shall be used to power up an LPDDR2 device. Unless specified otherwise, these steps are
mandatory.
1. Power Ramp
While applying power (after Ta), CKE shall be held at a logic low level (≤ 0.2 x VDDCA), all other inputs shall be
between VILmin and VIHmax. The LPDDR2 device will only guarantee that outputs are in a high impedance state
while CKE is held low.
On or before the completion of the power ramp (Tb) CKE must be held low.
DQ, DM, DQS_t and DQS_c voltage levels must be between VSSQ and VDDQ during voltage ramp to avoid latchup.
CK_t, CK_c, CS_n, and CA input levels must be between VSSCA and VDDCA during voltage ramp to avoid latch-up.
The following conditions apply:
Ta is the point where any power supply first reaches 300mV.
After Ta is reached, VDD1 must be greater than VDD2 - 200mV.
After Ta is reached, VDD1 and VDD2 must be greater than VDDCA - 200mV.
After Ta is reached, VDD1 and VDD2 must be greater than VDDQ - 200mV.
After Ta is reached, VREF must always be less than all other supply voltages.
The voltage difference between any of VSS, VSSQ, and VSSCA pins may not exceed 100mV.
The above conditions apply between Ta and power-off (controlled or uncontrolled).
Tb is the point when all supply voltages are within their respective min/max operating conditions. Reference voltages
shall be within their respective min/max operating conditions a minimum of 5 clocks before CKE goes high.
For supply and reference voltage operating conditions, see 8.2.1.1 “Recommended DC Operating Conditions”
table.
Power ramp duration tINIT0 (Tb - Ta) must be no greater than 20 mS.
2. CKE and clock
Beginning at Tb, CKE must remain low for at least tINIT1 = 100 nS, after which it may be asserted high. Clock must
be stable at least tINIT2 = 5 x tCK prior to the first low to high transition of CKE (Tc). CKE, CS_n and CA inputs must
observe setup and hold time (tIS, tIH) requirements with respect to the first rising clock edge (as well as to the
subsequent falling and rising edges).
The clock period shall be within the range defined for tCKb (18 nS to 100 nS), if any Mode Register Reads are
performed. Mode Register Writes can be sent at normal clock operating frequencies so long as all AC Timings are
met. Furthermore, some AC parameters (e.g. tDQSCK) may have relaxed timings (e.g. tDQSCKb) before the system is
appropriately configured.
While keeping CKE high, issue NOP commands for at least tINIT3 = 200 µS. (Td).
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 15 -
W97BH6KB / W97BH2KB
3. Reset command
After tINIT3 is satisfied, a MRW(Reset) command shall be issued (Td). The memory controller may optionally issue a
Precharge-All command prior to the MRW Reset command. Wait for at least tINIT4 = 1 µS while keeping CKE
asserted and issuing NOP commands.
4. Mode Registers Reads and Device Auto-Initialization (DAI) polling:
After tINIT4 is satisfied (Te) only MRR commands and power-down entry/exit commands are allowed. Therefore, after
Te, CKE may go low in accordance to Power-Down entry and exit specification (see section 7.4.25 “Power-Down”).
The MRR command may be used to poll the DAI-bit to acknowledge when Device Auto-Initialization is complete or
the memory controller shall wait a minimum of tINIT5 before proceeding.
As the memory output buffers are not properly configured yet, some AC parameters may have relaxed timings before
the system is appropriately configured.
After the DAI-bit (MR#0, “DAI”) is set to zero “DAI complete” by the memory device, the device is in idle state (Tf).
The state of the DAI status bit can be determined by an MRR command to MR#0.
The LPDDR2 SDRAM device will set the DAI-bit no later than tINIT5 (10 µS) after the Reset command. The memory
controller shall wait a minimum of tINIT5 or until the DAI-bit is set before proceeding.
After the DAI-Bit is set, it is recommended to determine the device type and other device characteristics by issuing
MRR commands (MR0 “Device Information” etc.).
5. ZQ Calibration:
After tINIT5 (Tf), an MRW ZQ Initialization Calibration command may be issued to the memory (MR10). This
command is used to calibrate the LPDDR2 output drivers (RON) over process, voltage, and temperature. Optionally,
the MRW ZQ Initialization Calibration command will update MR0 to indicate RZQ pin connection. In systems in which
more than one LPDDR2 device exists on the same bus, the controller must not overlap ZQ Calibration commands.
The device is ready for normal operation after tZQINIT.
6. Normal Operation:
After tZQINIT (Tg), MRW commands may be used to properly configure the memory, for example the output buffer
driver strength, latencies etc. Specifically, MR1, MR2, and MR3 shall be set to configure the memory for the target
frequency and memory configuration.
The LPDDR2 device will now be in IDLE state and ready for any valid command.
After Tg, the clock frequency may be changed according to the clock frequency change procedure described in
section 7.4.27 “Input Clock Stop and Frequency Change”.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 16 -
W97BH6KB / W97BH2KB
7.2.2
Timing Parameters for Initialization
Symbol
Value
min
max
tINIT0
20
Comment
mS
Maximum Power Ramp Time
tINIT1
100
nS
Minimum CKE low time after completion of power ramp
tINIT2
5
tCK
Minimum stable clock before first CKE high
tINIT3
200
µS
Minimum Idle time after first CKE assertion
tINIT4
1
µS
Minimum Idle time after Reset command
µS
Maximum duration of Device Auto-Initialization
µS
ZQ Initial Calibration for LPDDR2-S4
nS
Clock cycle time during boot
tINIT5
10
tZQINIT
1
tCKb
18
7.2.3
Unit
100
Power Ramp and Initialization Sequence
Ta
Tb
Td
Tc
Te
Tf
Tg
tINIT2 = 5 tCK (min)
CK_t / CK_c
tINIT0 = 20 ms (max)
Supplies
tINIT3 = 200 μs (min)
tINIT1 = 100 ns (min)
CKE
PD
tINIT5
tISCKE
tZQINIT
tINIT4 = 1 μs (min)
CA*
RESET
MRR
ZQC
Valid
DQ
*Midlevel on CA bus means : valid NOP
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 17 -
W97BH6KB / W97BH2KB
7.2.4
Initialization after Reset (without Power ramp)
If the RESET command is issued outside the power up initialization sequence, the reinitialization procedure shall
begin with step 3 (Td).
7.2.5
Power-off Sequence
The following sequence shall be used to power off the LPDDR2 device.
While removing power, CKE shall be held at a logic low level (≤ 0.2 x VDDCA), all other inputs shall be between
VILmin and VIHmax. The LPDDR2 device will only guarantee that outputs are in a high impedance state while CKE is
held low.
DQ, DM, DQS_t and DQS_c voltage levels must be between VSSQ and VDDQ during power off sequence to avoid
latch-up. CK_t, CK_c, CS_n and CA input levels must be between VSSCA and VDDCA during power off sequence to
avoid latch-up.
Tx is the point where any power supply decreases under its minimum value specified in 8.2.1.1 “Recommended DC
Operating Conditions” table.
Tz is the point where all power supplies are below 300 mV. After Tz, the device is powered off.
The time between Tx and Tz (tPOFF) shall be less than 2s.
The following conditions apply:
Between Tx and Tz, VDD1 must be greater than VDD2 - 200 mV.
Between Tx and Tz, VDD1 and VDD2 must be greater than VDDCA - 200 mV.
Between Tx and Tz, VDD1 and VDD2 must be greater than VDDQ - 200 mV.
Between Tx and Tz, VREF must always be less than all other supply voltages.
The voltage difference between any of VSS, VSSQ, and VSSCA pins may not exceed 100 mV.
For supply and reference voltage operating conditions, see 8.2.1.1 “Recommended DC Operating Conditions”
table.
7.2.6
Timing Parameters Power-Off
Symbol
tPOFF
7.2.7
Value
min
max
-
2
Unit
s
Comment
Maximum Power-Off Ramp Time
Uncontrolled Power-Off Sequence
The following sequence shall be used to power off the LPDDR2 device under uncontrolled condition.
Tx is the point where any power supply decreases under its minimum value specified in the DC operating condition
table. After turning off all power supplies, any power supply current capacity must be zero, except for any static
charge remaining in the system.
Tz is the point where all power supply first reaches 300 mV. After Tz, the device is powered off.
The time between Tx and Tz (tPOFF) shall be less than 2s. The relative levels between supply voltages are
uncontrolled during this period.
VDD1 and VDD2 shall decrease with a slope lower than 0.5 V/µS between Tx and Tz.
Uncontrolled power off sequence can be applied only up to 400 times in the life of the device.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 18 -
W97BH6KB / W97BH2KB
7.3
Mode Register Definition
7.3.1
Mode Register Assignment and Definition
Each register is denoted as “R” if it can be read but not written, “W” if it can be written but not read, and “R/W” if it
can be read and written.
Mode Register Read command shall be used to read a register. Mode Register Write command shall be used to
write a register.
7.3.1.1
Mode Register Assignment
MR#
MA[7:0]
Function
Access
0
00H
01H
Device Info.
R
(RFU)
Device Feature 1
W
nWR (for AP)
Device Feature 2
W
(RFU)
RL & WL
I/O Config-1
W
(RFU)
DS
1
2
3
4
5
6
7
8
9
10
11-15
16
17
18-19
20-31
32
33-39
40
41-47
48-62
63
64-126
127
02H
03H
04H
05H
OP5
OP4
OP3
RZQI
OP1
OP0
DI
DAI
BT
R
LPDDR2 Manufacturer ID
06H
07H
Basic Config-2
R
Revision ID1
Basic Config-3
R
Revision ID2
08H
09H
Basic Config-4
R
Test Mode
W
Vendor-Specific Test Mode
0AH
0BH~0FH
I/O Calibration
W
Calibration Code
(reserved)
-
(RFU)
10H
11H
PASR_Bank
W
Bank Mask
PASR_Seg
W
Segment Mask
12H~13H
14h–1Fh
(Reserved)
-
(RFU)
20H
21H~27H
DQ Calibration Pattern A
R
28H
29H~2FH
DQ Calibration Pattern B
R
(Do Not Use)
-
30H~3EH
3FH
40H~7EH
(Reserved)
-
FFH
(RFU)
BL
R
255
TUF
WC
OP2
DNVI
Refresh Rate
192-254
191
OP6
Basic Config-1
7FH
80H~BEH
BFH
C0H~FEH
128-190
OP7
I/O width
Refresh Rate
Density
Type
Reserved for NVM
(Do Not Use)
See 7.4.21.2 “DQ Calibration”
See 7.4.21.2 “DQ Calibration”
(RFU)
Reset
W
X
(Reserved)
-
(RFU)
(Do Not Use)
-
(Reserved for Vendor Use)
-
(Do Not Use)
-
(Reserved for Vendor Use)
-
(Do Not Use)
-
(RFU)
(RFU)
Notes:
1. RFU bits shall be set to ‘0’ during Mode Register writes.
2. RFU bits shall be read as ‘0’ during Mode Register reads.
3. All Mode Registers that are specified as RFU or write-only shall return undefined data when read and DQS shall be toggled.
4. All Mode Registers that are specified as RFU shall not be written.
5. Writes to read-only registers shall have no impact on the functionality of the device.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 19 -
W97BH6KB / W97BH2KB
7.3.2
MR0_Device Information (MA[7:0] = 00H)
OP7
OP6
OP5
OP4
(RFU)
OP3
OP2
RZQI
DNVI
OP1
OP0
DI
DAI
DAI (Device Auto-Initialization Status)
Read-only
OP0
0b: DAI complete
1b: DAI still in progress
DI (Device Information)
Read-only
OP1
0b: S4 SDRAM
DNVI (Data Not Valid Information)
Read-only
OP2
0b: LPDDR2 SDRAM will not implement DNV functionalit
OP[4:3]
00b: RZQ self test not executed.
01b: ZQ-pin may connect to VDDCA or float
10b: ZQ-pin may short to GND
11b: ZQ-pin self test completed, no error condition detected
(ZQ-pin may not connect to VDDCA or float nor short to GND)
RZQI (Built in Self Test for RZQ Information)
Read-only
Notes:
1. RZQI will be set upon completion of the MRW ZQ Initialization Calibration command.
2. If ZQ is connected to VDDCA to set default calibration by user, OP[4:3] shall be read as 01. If user does not want to connect ZQ pin to
VDDCA, but OP[4:3] is read as 01 or 10, it might indicate a ZQ-pin assembly error. It is recommended that the assembly error being
corrected first.
3. In the case of possible assembly error (either OP[4:3]=01 or OP[4:3]=10 as defined above), the LPDDR2 device will default to factory trim
settings for RON, and will ignore ZQ calibration commands. In either case, the system may not function as intended.
4. In the case of the ZQ self-test returning a value of 11b, this result indicates that the device has detected a resistor connection to the ZQ pin.
However, this result cannot be used to validate the ZQ resistor value or that the ZQ resistor tolerance meets the specified limits (i.e., 240
Ohm ± 1%).
7.3.3
MR1_Device Feature 1 (MA[7:0] = 01H)
OP7
OP6
OP5
nWR (for AP)
OP4
OP3
WC
BT
OP2
OP1
OP0
BL
010b: BL4 (default)
011b: BL8
BL
Write-only
OP[2:0]
BT
Write-only
OP3
0b: Sequential (default)
1b: Interleaved
WC
Write-only
OP4
0b: Wrap (default)
1 b: No wrap (allowed for SDRAM BL4 only)
100b: BL16
All others: reserved
001b: nWR=3 (default)
010b: nWR=4
nWR
Write-only
OP[7:5]
011b: nWR=5
100b: nWR=6
1
101b: nWR=7
110b: nWR=8
All others: reserved
Note:
1. Programmed value in nWR register is the number of clock cycles which determines when to start internal precharge operation for a write
burst with AP enabled. It is determined by RU(tWR/tCK).
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 20 -
W97BH6KB / W97BH2KB
7.3.3.1
Burst Sequence by Burst Length (BL), Burst Type (BT), and Warp Control (WC)
Burst Cycle Number and Burst Address Sequence
C3
C2
C1
C0
WC
BT
BL
1
2
3
4
0
1
2
3
2
3
0
1
5
6
7
8
9
10
11
12
13
14
15
16
X
X
0b
0b
X
X
1b
0b
X
X
X
0b
X
0b
0b
0b
X
0b
1b
0b
X
1b
0b
0b
X
1b
1b
0b
X
0b
0b
0b
X
0b
1b
0b
X
1b
0b
0b
X
1b
1b
0b
X
X
X
0b
0b
0b
0b
0b
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
0b
0b
1b
0b
2
3
4
5
6
7
8
9
A
B
C
D
E
F
0
1
0b
1b
0b
0b
4
5
6
7
8
9
A
B
C
D
E
F
0
1
2
3
0b
1b
1b
0b
6
7
8
9
A
B
C
D
E
F
0
1
2
3
4
5
1b
0b
0b
0b
8
9
A
B
C
D
E
F
0
1
2
3
4
5
6
7
1b
0b
1b
0b
A
B
C
D
E
F
0
1
2
3
4
5
6
7
8
9
1b
1b
0b
0b
C
D
E
F
0
1
2
3
4
5
6
7
8
9
A
B
1b
1b
1b
0b
E
F
0
1
2
3
4
5
6
7
8
9
A
B
C
D
X
X
X
0b
X
X
X
0b
wrap
any
4
nw
any
y
y+1 y+2 y+3
0
1
2
3
4
5
6
7
2
3
4
5
6
7
0
1
4
5
6
7
0
1
2
3
6
7
0
1
2
3
4
5
0
1
2
3
4
5
6
7
2
3
0
1
6
7
4
5
4
5
6
7
0
1
2
3
6
7
4
5
2
3
0
1
seq
wrap
8
int
nw
illegal (not allowed)
any
seq
wrap
16
nw
int
illegal (not allowed)
any
illegal (not allowed)
Notes:
1. C0 input is not present on CA bus. It is implied zero.
2. For BL=4, the burst address represents C[1: 0].
3. For BL=8, the burst address represents C[2:0].
4. For BL=16, the burst address represents C[3:0].
5. For no-wrap (nw), BL4, the burst shall not cross the page boundary and shall not cross sub-page boundary. The variable y may start at
any address with C0 equal to 0 and may not start at any address shown in table below.
7.3.3.2
Non Wrap Restrictions
Bus Width
2Gb
Not across full page boundary
x16
3FE, 3FF, 000, 001
x32
1FE, 1FF, 000, 001
Not across sub page boundary
x16
1FE, 1FF, 200, 201
x32
None
Note: Non-wrap BL=4 data-orders shown above are prohibited.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 21 -
W97BH6KB / W97BH2KB
7.3.4
MR2_Device Feature 2 (MA[7:0] = 02H)
OP7
OP6
OP5
OP4
OP3
OP2
(RFU)
RL & WL
7.3.5
OP0
RL & WL
Write-only
0001b: RL = 3 / WL = 1 (default)
0010b: RL = 4 / WL = 2
0011b: RL = 5 / WL = 2
0100b: RL = 6 / WL = 3
0101b: RL = 7 / WL = 4
0110b: RL = 8 / WL = 4
All others: reserved
OP[3:0]
MR3_I/O Configuration 1 (MA[7:0] = 03H)
OP7
OP6
OP5
OP4
OP3
OP2
(RFU)
DS
7.3.6
OP1
OP1
OP0
DS
Write-only
0000b: reserved
0001b: 34.3-ohm typical
0010b: 40-ohm typical (default)
0011b: 48-ohm typical
0100b: 60-ohm typical
0101b: reserved for 68.6-ohm typical
0110b: 80-ohm typical
0111b: 120-ohm typical
All others: reserved
OP[3:0]
MR4_Device Temperature (MA[7:0] = 04H)
OP7
OP6
OP5
TUF
OP4
OP3
(RFU)
SDRAM
Refresh Rate
Read-only
OP[2:0]
Temperature
Update Flag (TUF)
Read-only
OP7
OP2
OP1
OP0
SDRAM Refresh Rate
000b: SDRAM Low temperature operating limit exceeded
001b: 4x tREFI, 4x tREFIpb, 4x tREFW
010b: 2x tREFI, 2x tREFIpb, 2x tREFW
011b: 1x tREFI, 1x tREFIpb, 1x tREFW (≤ 85°C)
100b: Reserved
101b: 0.25x tREFI, 0.25x tREFIpb, 0.25x tREFW, do not de-rate
SDRAM AC timing
110b: 0.25x tREFI, 0.25x tREFIpb, 0.25x tREFW, de-rate SDRAM
AC timing
111b: SDRAM High temperature operating limit exceeded
0b: OP[2:0] value has not changed since last read of MR4.
1b: OP[2:0] value has changed since last read of MR4.
Notes:
1. A Mode Register Read from MR4 will reset OP7 to ‘0’.
2. OP7 is reset to ‘0’ at power-up.
3. If OP2 equals ‘1’, the device temperature is greater than 85°C.
4. OP7 is set to ‘1’ if OP2:OP0 has changed at any time since the last read of MR4.
5. LPDDR2 might not operate properly when OP[2:0] = 000b or 111b.
6. For specified operating temperature range and maximum operating temperature, refer to “Operating Temperature Conditions” table.
7. LPDDR2 devices must be derated by adding 1.875 nS to the following core timing parameters: tRCD, tRC, tRAS, tRP, and tRRD. tDQSCK
shall be de-rated according to the tDQSCK de-rating value in “LPDDR2 AC Timing” table. Prevailing clock frequency spec and related
setup and hold timings shall remain unchanged.
8. The recommended frequency for reading MR4 is provided in “Temperature Sensor” section.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 22 -
W97BH6KB / W97BH2KB
7.3.7
MR5_Basic Configuration 1 (MA[7:0] = 05H)
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
LPDDR2 Manufacturer ID
LPDDR2 Manufacturer ID
7.3.8
Read-only
OP[7:0]
0000 1000b: Winbond
MR6_Basic Configuration 2 (MA[7:0] = 06H)
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Revision ID1
Revision ID1
Read-only
OP[7:0]
00000000b: A-version
Note: MR6 is Vendor Specific.
7.3.9
MR7_Basic Configuration 3 (MA[7:0] = 07H)
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Revision ID2
Revision ID2
Read-only
OP[7:0]
00000000b: A-version
Note: MR7 is Vendor Specific.
7.3.10 MR8_Basic Configuration 4 (MA[7:0] = 08H)
OP7
OP6
OP5
OP4
I/O width
OP3
OP2
OP1
Density
OP0
Type
Type
Read-only
OP[1:0]
00b: S4 SDRAM
Density
Read-only
OP[5:2]
0101b: 2Gb
I/O width
Read-only
OP[7:6]
00b: x32
01b: x16
7.3.11 MR9_Test Mode (MA[7:0] = 09H)
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Vendor-specific Test Mode
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 23 -
W97BH6KB / W97BH2KB
7.3.12 MR10_Calibration (MA[7:0] = 0AH)
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Calibration Code
Write-only
Calibration Code
OP[7:0]
0xFF: Calibration command after initialization
0xAB: Long calibration
0x56: Short calibration
0xC3: ZQ Reset
others: Reserved
Notes:
1. Host processor shall not write MR10 with “Reserved” values.
2. LPDDR2 devices shall ignore calibration command when a “Reserved” value is written into MR10.
3. See AC timing table for the calibration latency.
4. If ZQ is connected to VSSCA through RZQ, either the ZQ calibration function (see section 7.4.24 “Mode Register Write ZQ
Calibration Command”) or default calibration (through the ZQreset command) is supported. If ZQ is connected to VDDCA, the
device operates with default calibration, and ZQ calibration commands are ignored. In both cases, the ZQ connection shall not
change after power is applied to the device.
5. Optionally, the MRW ZQ Initialization Calibration command will update MR0 to indicate RZQ pin connection.
7.3.13 MR16_PASR_Bank Mask (MA[7:0] = 10H)
OP7
OP6
OP5
S4 SDRAM
OP4
OP3
OP2
OP1
OP0
Bank Mask (8-bank)
Bank [7:0] Mask
Write-only
OP[7:0]
0b: refresh enable to the bank (=unmasked, default)
1b: refresh blocked (=masked)
OP
Bank Mask
8-Bank S4 SDRAM
0
XXXXXXX1
Bank 0
1
XXXXXX1X
Bank 1
2
XXXXX1XX
Bank 2
3
XXXX1XXX
Bank 3
4
XXX1XXXX
Bank 4
5
XX1XXXXX
Bank 5
6
X1XXXXXX
Bank 6
7
1XXXXXXX
Bank 7
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 24 -
W97BH6KB / W97BH2KB
7.3.14 MR17_PASR_Segment Mask (MA[7:0] = 11H)
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Segment Mask
Segment [7:0] Mask
Write-only
0b: refresh enable to the segment (=unmasked, default)
1b: refresh blocked (=masked)
OP[7:0]
Segment
OP
Segment Mask
R[13:11]
0
0
XXXXXXX1
000b
1
1
XXXXXX1X
001b
2
2
XXXXX1XX
010b
3
3
XXXX1XXX
011b
4
4
XXX1XXXX
100b
5
5
XX1XXXXX
101b
6
6
X1XXXXXX
110b
7
7
1XXXXXXX
111b
7.3.15 MR32_DQ Calibration Pattern A (MA[7:0] = 20H)
Reads to MR32 return DQ Calibration Pattern “A”. See section 7.4.21.2 “DQ Calibration”.
7.3.16 MR40_DQ Calibration Pattern B (MA[7:0] = 28H)
Reads to MR40 return DQ Calibration Pattern “B”. See section 7.4.21.2 “DQ Calibration”.
7.3.17 MR63_Reset (MA[7:0] = 3FH): MRW only
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
X
For additonal information on MRW RESET see section 7.4.22 “Mode Register Write Command”.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 25 -
W97BH6KB / W97BH2KB
7.4
Command Definitions and Timing Diagrams
7.4.1
Activate Command
The SDRAM Activate command is issued by holding CS_n LOW, CA0 LOW, and CA1 HIGH at the rising edge of the
clock. The bank addresses are used to select the desired bank. The row addresses are used to determine which row
to activate in the selected bank. The Activate command must be applied before any Read or Write operation can be
executed. The LPDDR2 SDRAM can accept a read or write command at time tRCD after the activate command is
sent. Once a bank has been activated it must be precharged before another Activate command can be applied to the
same bank. The bank active and precharge times are defined as t RAS and tRP, respectively. The minimum time
interval between successive Activate commands to the same bank is determined by the RAS cycle time of the device
(tRC). The minimum time interval between Activate commands to different banks is t RRD.
Certain restrictions on operation of the 8-bank devices must be observed. There are two rules. One for restricting the
number of sequential Activate commands that can be issued and another for allowing more time for RAS precharge
for a Precharge All command. The rules are as follows:
8-bank device Sequential Bank Activation Restriction: No more than 4 banks may be activated (or refreshed, in the
case of REFpb) in a rolling tFAW window. Converting to clocks is done by dividing t FAW [nS] by tCK[nS], and rounding
up to next integer value. As an example of the rolling window, if RU{ (tFAW / tCK) } is 10 clocks, and an activate
command is issued in clock N, no more than three further activate commands may be issued at or between clock
N+1 and N+9. REFpb also counts as bank-activation for the purposes of tFAW.
8-bank device Precharge All Allowance: tRP for a Precharge All command for an 8-bank device shall equal tRPab,
which is greater than tRPpb.
7.4.1.1
Activate Command Cycle: tRCD = 3, tRP = 3, tRRD = 2
T0
T1
T2
T3
Tn
Tn+1
Tn+2
Tn+3
CK_t / CK_c
CA0-9
Bank A
Row Addr Row Addr
Bank B
Bank A
Row Addr Row Addr Col Addr Col Addr
RAS-CAS delay=tRCD
Bank A
Read Begins
RAS-RAS delay time=tRRD
[Cmd]
Activate
Nop
Activate
Bank A
Row Addr Row Addr
Bank Precharge time=tRP
Read
Precharge
Nop
Nop
Activate
Bank Active=tRAS
Row Cycle time=tRC
Note:
A Precharge-All command uses tRPab timing, while a Single Bank Precharge command uses t RPpb timing. In this figure, tRP is used to denote
either an All-bank Precharge or a Single Bank Precharge
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 26 -
W97BH6KB / W97BH2KB
7.4.1.2
tFAW Timing
Tn
Tn+
Tm
Tm+
Tx
Ty
Tx+
Ty+1
Ty+2
Tz
Tz+1
Tz+2
CK_t / CK_c
CA0-9
Bank A Bank A
[Cmd]
Bank B Bank B
Bank C Bank C
Bank D Bank D
ACT
ACT
ACT
ACT
tRRD
Bank E Bank E
Nop
Nop
Nop
ACT
Nop
tRRD
tRRD
tFAW
Note: tFAW is for 8-bank devices only.
7.4.1.3
Command Input Setup and Hold Timing
T0
T1
T2
T3
CK_t / CK_c
tIS
CS_n
tIH
[Cmd]
tIH
VIH(AC)
VIL(DC)
VIL(AC)
tIS
CA0-9
tIS
VIH(DC)
tIH
tIS
tIH
CA
CA
CA
CA
CA
CA
CA
CA
Rise
Fall
Rise
Fall
Rise
Fall
Rise
Fall
Nop
Command
Nop
Command
HIGH or LOW (but a defined logic level)
Note: Setup and hold conditions also apply to the CKE pin. See section related to power down for timing diagrams related to the CKE pin.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 27 -
W97BH6KB / W97BH2KB
7.4.1.4
CKE Input Setup and Hold Timing
T0
T1
Tx
Tx+1
CK_t / CK_c
tIHCKE
tIHCKE
CKE
VIHCKE
VILCKE
VIHCKE
VILCKE
tISCKE
tISCKE
HIGH or LOW (but a defined logic level)
Notes:
1. After CKE is registered LOW, CKE signal level shall be maintained below V ILCKE for tCKE specification (LOW pulse width).
2. After CKE is registered HIGH, CKE signal level shall be maintained above V IHCKE for tCKE specification (HIGH pulse width).
7.4.2
Read and Write Access Modes
After a bank has been activated, a read or write cycle can be executed. This is accomplished by setting CS_n LOW,
CA0 HIGH, and CA1 LOW at the rising edge of the clock. CA2 must also be defined at this time to determine
whether the access cycle is a READ operation (CA2 HIGH) or a WRITE operation (CA2 LOW).
The LPDDR2 SDRAM provides a fast column access operation. A single Read or Write Command will initiate a burst
read or write operation on successive clock cycles.
A new burst access must not interrupt the previous 4-bit burst operation in case of BL = 4 setting. In case of BL = 8
and BL = 16 settings, Reads may be interrupted by Reads and Writes may be interrupted by Writes provided that this
occurs on even clock cycles after the Read or Write command and t CCD is met.
7.4.3
Burst Read Command
The Burst Read command is initiated by having CS_n LOW, CA0 HIGH, CA1 LOW and CA2 HIGH at the rising edge
of the clock. The command address bus inputs, CA5r-CA6r and CA1f-CA9f, determine the starting column address
for the burst. The Read Latency (RL) is defined from the rising edge of the clock on which the Read Command is
issued to the rising edge of the clock from which the t DQSCK delay is measured. The first valid datum is available RL
* tCK + tDQSCK + tDQSQ after the rising edge of the clock where the Read Command is issued. The data strobe output
is driven LOW tRPRE before the first rising valid strobe edge. The first bit of the burst is synchronized with the first
rising edge of the data strobe. Each subsequent data-out appears on each DQ pin edge aligned with the data strobe.
The RL is programmed in the mode registers.
Timings for the data strobe are measured relative to the crosspoint of DQS_t and its complement, DQS_c.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 28 -
W97BH6KB / W97BH2KB
7.4.3.1
Data Output (Read) Timing (tDQSCKmax)
RL-1
RL
tCH
RL+BL/2
tCL
CK_c
CK_t
tLZ(DQS)
tDQSCKmax
tQSH
DQS_c
DQS_c
DQS_t
tQSL
tHZ(DQs)
DQS_t
tRPRE
tRPST
DQ
Q
tDQSQmax
Q
Q
Q
tDQSQmax
tQH
tLZ(DQ)
tQH
tHZ(DQ)
Notes:
1. tDQSCK may span multiple clock periods.
2. An effective Burst Length of 4 is shown.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 29 -
W97BH6KB / W97BH2KB
7.4.3.2
Data Output (Read) Timing (tDQSCKmin)
RL-1
RL
tCH
RL+BL/2
tCL
CK_c
CK_t
tHZ(DQs)
tLZ(DQS)
tDQSCKmin
tQSH
DQS_c
DQS_c
DQS_t
tQSL
DQS_t
tRPST
tRPRE
DQ
Q
tDQSQmax
tLZ(DQ)
Q
Q
Q
tDQSQmax
tQH
tQH
tHZ(DQ)
Note: An effective Burst Length of 4 is shown.
7.4.3.3
Burst Read: RL = 5, BL = 4, tDQSCK > tCK
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
Bank A
Col Addr Col Addr
[Cmd]
Read
Nop
Nop
Nop
Nop
Nop
Nop
Nop
Nop
tDQSCK
DQS_c
DQS_t
RL = 5
DQS
DOUT A0
DOUT A1
DOUT A2
DOUT A3
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 30 -
W97BH6KB / W97BH2KB
7.4.3.4
Burst Read: RL = 3, BL = 8, tDQSCK < tCK
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
[Cmd]
Bank A
Col Addr
Col Addr
Read
Nop
Nop
Nop
Nop
Nop
Nop
Nop
Nop
tDQSCK
DQS_c
DQS_t
RL = 3
DQS
7.4.3.5
DOUT A0
DOUT A2
DOUT A1
DOUT A3
DOUT A4
DOUT A5
DOUT A6
DOUT A7
LPDDR2: tDQSCKDL Timing
Tn Tn+1 Tn+2 Tn+3 Tn+4 Tn+5 Tn+6 Tn+7 Tn+8
Tm Tm+1 Tm+2 Tm+3 Tm+4 Tm+5 Tm+6 Tm+7 Tm+8
CA0-9
Col Col
Addr Addr
Col Col
Addr Addr
[Cmd]
Read Nop
CK_t / CK_c
Nop
Nop
Nop
Nop
Nop
Nop Nop Read Nop Nop
tDQSCKn
DQS_c
DQS_t
DQS
Nop Nop
Nop
Nop
Nop
Nop
tDQSCKm
RL = 5
RL = 5
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
32mS maximum
tDQSCKDL = l tDQSCKn – tDQSCKm l
Note: tDQSCKDLmax is defined as the maximum of ABS(tDQSCKn - tDQSCKm) for any {tDQSCKn ,tDQSCKm} pair within any 32mS rolling window.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 31 -
W97BH6KB / W97BH2KB
7.4.3.6
LPDDR2: tDQSCKDM Timing
Tn Tn+1 Tn+2 Tn+3 Tn+4 Tn+5 Tn+6 Tn+7 Tn+8
Tm Tm+1 Tm+2 Tm+3 Tm+4 Tm+5 Tm+6 Tm+7 Tm+8
CA0-9
Col Col
Addr Addr
Col Col
Addr Addr
[Cmd]
Read Nop Nop Nop Nop Nop Nop Nop Nop Read Nop Nop
Nop Nop Nop Nop Nop Nop
tDQSCKn
tDQSCKm
CK_t / CK_c
DQS_c
DQS_t
RL = 5
RL = 5
DQS
DOUT DOUT DOUT DOUT
A3
A2
A1
A0
DOUT DOUT DOUT DOUT
A3
A2
A1
A0
1.6µS maximum
tDQSCKDM = l tDQSCKn – tDQSCKm l
Note: tDQSCKDMmax is defined as the maximum of ABS(tDQSCKn - tDQSCKm) for any {tDQSCKn,tDQSCKm} pair within any 1.6µS rolling window.
7.4.3.7
LPDDR2: tDQSCKDS Timing
Tn Tn+1 Tn+2 Tn+3 Tn+4 Tn+5 Tn+6 Tn+7 Tn+8
Tm Tm+1 Tm+2 Tm+3 Tm+4 Tm+5 Tm+6 Tm+7 Tm+8
CK_t / CK_c
CA0-9
[Cmd]
Col Col
Addr Addr
Col Col
Addr Addr
Read Nop
Nop
Nop
Nop Nop
Nop
Nop Nop
Read Nop Nop
tDQSCKn
DQS_c
DQS_t
DQS
Nop Nop
Nop
Nop
Nop
Nop
tDQSCKm
RL = 5
RL = 5
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
160nS maximum
tDQSCKDS = l tDQSCKn – tDQSCKm l
Note:
tDQSCKDSmax is defined as the maximum of ABS(tDQSCKn - tDQSCKm) for any {tDQSCKn ,tDQSCKm} pair for reads within a consecutive burst
within any 160nS rolling window
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 32 -
W97BH6KB / W97BH2KB
7.4.3.8
Burst Read Followed by Burst Write: RL = 3, WL = 1, BL = 4
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
Bank A
Col Addr
[Cmd]
Bank A
Col Addr
Col Addr
Read
Nop
Nop
Nop
Nop
Nop
tDQSCK
Col Addr
Write
Nop
Nop
tDQSSmin
BL / 2
DQS_c
DQS_t
RL = 3
DQS
WL=1
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DIN A0
DIN A1
DIN A2
The minimum time from the burst read command to the burst write command is defined by the Read Latency (RL)
and the Burst Length (BL). Minimum read to write latency is RL + RU(t DQSCKmax/tCK) + BL/2 + 1 - WL clock cycles.
Note that if a read burst is truncated with a Burst Terminate (BST) command, the effective burst length of the
truncated read burst should be used as “BL” to calculate the minimum read to write delay.
7.4.3.9
Seamless Burst Read: RL = 3, BL= 4, tCCD = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
[Cmd]
Bank N
Col Addr A Col Addr A
Read
Bank N
Col Addr B Col Addr B
Nop
Read
Nop
Nop
Nop
Nop
Nop
Nop
tCCD = 2
DQS_c
DQS_t
RL = 3
DQS
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT B0
DOUT B1
DOUT B2
DOUT B3
The seamless burst read operation is supported by enabling a read command at every other clock for BL = 4
operation, every 4 clocks for BL = 8 operation, and every 8 clocks for BL=16 operation.
For LPDDR2-SDRAM, this operation is allowed regardless of whether the accesses read the same or different banks
as long as the banks are activated.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 33 -
W97BH6KB / W97BH2KB
7.4.4
Reads Interrupted by a Read
For LPDDR2-S4 device, burst read can be interrupted by another read on even clock cycles after the Read
command, provided that tCCD is met.
7.4.4.1
Read Burst Interrupt Example: RL = 3, BL= 8, tCCD = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
Bank N
Col Addr A Col Addr A
[Cmd]
Read
Bank N
Col Addr B Col Addr B
Nop
Read
Nop
Nop
Nop
Nop
Nop
Nop
tCCD=2
DQS_c
DQS_t
RL = 3
DQS
DOUT A0
DOUT A1
DOUT A2 DOUT A3
DOUT B0
DOUT B1
DOUT B2
DOUT B3
DOUT B4
DOUT B5
Notes:
1. For LPDDR2-S4 devices, read burst interrupt function is only allowed on burst of 8 and burst of 16.
2. For LPDDR2-S4 devices, read burst interrupt may occur on any clock cycle after the intial read command, provided that tCCD is met.
3. Reads can only be interrupted by other reads or the BST command.
4. Read burst interruption is allowed to any bank inside DRAM.
5. Read burst with Auto-Precharge is not allowed to be interrupted.
6. The effective burst length of the first read equals two times the number of clock cycles between the first read and the interrupting read.
7.4.5
Burst Write Operation
The Burst Write command is initiated by having CS_n LOW, CA0 HIGH, CA1 LOW and CA2 LOW at the rising edge
of the clock. The command address bus inputs, CA5r-CA6r and CA1f-CA9f, determine the starting column address
for the burst. The Write Latency (WL) is defined from the rising edge of the clock on which the Write Command is
issued to the rising edge of the clock from which the tDQSS delay is measured. The first valid data must be driven WL
* tCK + tDQSS from the rising edge of the clock from which the Write command is issued. The data strobe signal
(DQS) should be driven LOW tWPRE prior to the data input. The data bits of the burst cycle must be applied to the
DQ pins tDS prior to the respective edge of the DQS_t, DQS_c and held valid until tDH after that edge. The burst data
are sampled on successive edges of the DQS_t, DQS_c until the burst length is completed, which is 4, 8, or 16 bit
burst.
For LPDDR2-SDRAM devices, tWR must be satisfied before a precharge command to the same bank may be issued
after a burst write operation.
Input timings are measured relative to the crosspoint of DQS_t and its complement, DQS_c.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 34 -
W97BH6KB / W97BH2KB
7.4.5.1
Data Input (Write) Timing
tDQSH
tDQSL
DQS_c
DQS_c
DQS_t
DQS_t
tWPST
tWPRE
VIH(ac)
DQ
VIH(dc)
D
D
D
D
VIL(ac)
VIL(dc)
tDS
VIH(ac)
DM
VIH(dc)
DMin
DMin
DMin
DMin
VIL(dc)
VIL(ac)
7.4.5.2
tDH
tDH
tDS
Burst Write: WL = 1, BL= 4
T0
T1
T3
T2
T4
Tx
Tx+1
Ty
Ty+1
CK_t / CK_c
CA0-9
[Cmd]
Bank A
Col Addr
Write
Case 1:with tDQSS(max)
DQS_c
DQS_t
Bank A
Row Addr Row Addr
Bank A
Col Addr
Nop
Nop
Nop
tDSS
tDSS
tDQSSmax
Precharge
Nop
Nop
Activate
Nop
Completion of Burst Write
WL = 1
tWR
DQS
DIN A0
DIN A1
DIN A2
DIN A3
tRP
Case 2:with tDQSS(min)
tDQSSmin
DQS_c
DQS_t
DQS
tDSH
tDSH
WL = 1
tWR
DIN A0
DIN A1
DIN A2
DIN A3
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 35 -
W97BH6KB / W97BH2KB
7.4.5.3
Burst Wirte Followed by Burst Read: RL = 3, WL= 1, BL= 4
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
Bank M
Col Addr A Col Addr A
[Cmd]
Write
Bank N
Col Addr B Col Addr B
Nop
Nop
Nop
Nop
Nop
Read
Nop
Nop
RL = 3
WL = 1
DQS_c
DQS_t
tWTR
DQS
DIN A0
DIN A1
DIN A2
DIN A3
Notes:
1. The minimum number of clock cycles from the burst write command to the burst read command for any bank is [WL + 1 + BL/2 +
RU( tWTR/tCK)].
2. tWTR starts at the rising edge of the clock after the last valid input datum.
3. If a write burst is truncated with a Burst Terminate (BST) command, the effective burst length of the truncated write burst should be
used as “BL” to calculate the minimum write to read delay.
7.4.5.4
Seamless Burst Write: WL= 1, BL = 4, tCCD = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
Bank M
Col Addr A Col Addr A
[Cmd]
Write
Bank N
Col Addr B Col Addr B
Nop
Nop
Nop
Write
Nop
Nop
Nop
Nop
tCCD = 2
DQS_c
DQS_t
WL=1
DQS
DIN A0
DIN A1
DIN A2
DIN A3
DIN B0
DIN B1
DIN B2
DIN B3
Note:
The seamless burst write operation is supported by enabling a write command every other clock for BL = 4 operation, every four clocks for
BL = 8 operation, or every eight clocks for BL = 16 operation. This operation is allowed regardless of same or different banks as long as the
banks are activated
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 36 -
W97BH6KB / W97BH2KB
7.4.6
Writes Interrupted by a Write
For LPDDR2-S4 devices, burst writes can only be interrupted by another write on even clock cycles after the write
command, provided that tCCD(min) is met.
7.4.6.1
Write Burst Interrupt Timing: WL = 1, BL = 8, tCCD = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
Bank M
Col Addr A Col Addr A
[Cmd]
Write
Bank N
Col Addr B Col Addr B
Nop
Nop
Nop
Write
Nop
Nop
Nop
Nop
tCCD = 2
DQS_c
DQS_t
WL=1
DQS
DIN A0
DIN A1
DIN A2
DIN A3
DIN B0
DIN B1
DIN B2
DIN B3
DIN B4
DIN B5
DIN B6
DIN B7
Notes:
1. For LPDDR2-S4 devices, write burst interrupt function is only allowed on burst of 8 and burst of 16.
2. For LPDDR2-S4 devices, write burst interrupt may only occur on even clock cycles after the previous write commands, provided that
tCCD(min) is met.
3. Writes can only be interrupted by other writes or the BST command.
4. Write burst interruption is allowed to any bank inside DRAM.
5. Write burst with Auto-Precharge is not allowed to be interrupted.
6. The effective burst length of the first write equals two times the number of clock cycles between the first write and the interrupting write.
7.4.7
Burst Terminate
The Burst Terminate (BST) command is initiated by having CS_n LOW, CA0 HIGH, CA1 HIGH, CA2 LOW, and CA3
LOW at the rising edge of clock. A Burst Teminate command may only be issued to terminate an active Read or
Write burst. Therefore, a Burst Terminate command may only be issued up to and including BL/2 - 1 clock cycles
after a Read or Write command. The effective burst length of a Read or Write command truncated by a BST
command is as follows:
Effective burst length = 2 x {Number of clock cycles from the Read or Write Command to the BST command}
Note that if a read or write burst is truncated with a Burst Terminate (BST) command, the effective burst length of the
truncated burst should be used as “BL” to calculate the minimum read to write or write to read delay.
The BST command only affects the most recent read or write command. The BST command truncates an ongoing
read burst RL * tCK + tDQSCK + tDQSQ after the rising edge of the clock where the Burst Terminate command is
issued. The BST command truncates an on going write burst WL * t CK + tDQSS after the rising edge of the clock
where the Burst Terminate command is issued.
For LPDDR2-S4 devices, the 4-bit prefetch architecture allows the BST command to be issued on an even number
of clock cycles after a Write or Read command. Therefore, the effective burst length of a Read or Write command
truncated by a BST command is an integer multiple of 4.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 37 -
W97BH6KB / W97BH2KB
7.4.7.1
Burst Write Truncated by BST: WL = 1, BL = 16
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
Bank M
Col Addr A Col Addr A
[Cmd]
Write
Nop
Nop
Nop
Nop
BST
Nop
Nop
WL*tCK+tDQSS
Nop
BST not allowed
WL=1
DQS_c
DQS_t
DQS
DIN A0
DIN A1
DIN A2
DIN A3
DIN A4
DIN A5
DIN A7
DIN A6
Notes:
1. The BST command truncates an ongoing write burst WL * t CK + tDQSS after the rising edge of the clock where the Burst Terminate command
is issued.
2. For LPDDR2-S4 devices, BST can only be issued at even number of clock cycles after the Write command.
3. Additional BST commands are not allowed after T4 and may not be issued until after the next Read or Write command.
7.4.7.2
Burst Read Truncated by BST: RL = 3, BL = 16
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
Bank N
Col Addr A Col Addr A
[Cmd]
Read
Nop
Nop
Nop
BST
Nop
Nop
Nop
Nop
RL*tCK+tDQSCK+tDQSQ
BST not allowed
DQS_c
DQS_t
RL = 3
DQS
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A4
DOUT A5
DOUT A6
DOUT A7
Notes:
1. The BST command truncates an ongoing read burst RL * tCK + tDQSCK + tDQSQ after the rising edge of the clock where the Burst Terminate
command is issued.
2. For LPDDR2-S4 devices, BST can only be issued at even number of clock cycles after the Read command.
3. Additional BST commands are not allowed after T4 and may not be issued until after the next Read or Write command.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 38 -
W97BH6KB / W97BH2KB
7.4.8
Write Data Mask
One write data mask (DM) pin for each data byte (DQ) will be supported on LPDDR2 devices, consistent with the
implementation on LPDDR SDRAMs. Each data mask (DM) may mask its respective data byte (DQ) for any given
cycle of the burst. Data mask has identical timings on write operations as the data bits, though used as input only, is
internally loaded identically to data bits to insure matched system timing.
See 7.4.14.2 “Precharge & Auto Precharge Clarification” table for Write to Precharge timings.
7.4.8.1
Write Data Mask Timing
Data Mask Timing
DQS_c
DQS_t
DQ
VIH(ac) VIH(dc)
VIL(ac) VIL(dc)
DM
tDS
VIH(ac) VIH(dc)
VIL(ac) VIL(dc)
tDH
tDS
tDH
Data Mask Function,WL= 2, BL=4 shown,second DQ masked
CK_c
CK_t
[Cmd]
Case 1: min tDQSS
DQS_c
DQS_t
DQ
Wirte
WL = 2
tWR
tWTR
tDQSSmin
0
1
2
3
0
1
2
DM
Case 2: max tDQSS
tDQSSmax
DQS_c
DQS_t
DQ
3
DM
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 39 -
W97BH6KB / W97BH2KB
7.4.9
Precharge Operation
The Precharge command is used to precharge or close a bank that has been activated. The Precharge command is
initiated by having CS_n LOW, CA0 HIGH, CA1 HIGH, CA2 LOW, and CA3 HIGH at the rising edge of the clock.
The Precharge Command can be used to precharge each bank independently or all banks simultaneously. For 8bank devices, the AB flag, and the bank address bits, BA0, BA1, and BA2 are used to determine which bank(s) to
precharge. The bank(s) will be available for a subsequent row access t RPab after an All-Bank Precharge command is
issued and tRPpb after a Single-Bank Precharge command is issued.
In order to ensure that 8-bank devices do not exceed the instantaneous current supplying capability of 4-bank
devices, the Row Precharge time (tRP) for an All-Bank Precharge for 8-bank devices (tRPab) will be longer than the
Row Precharge time for a Single-Bank Precharge (tRPpb).
7.4.9.1
Bank Selection for Precharge by Address Bits
AB (CA4r)
BA2 (CA9r)
BA1 (CA8r)
BA0 (CA7r)
Precharged Bank(s)
8-bank device
0
0
0
0
Bank 0 only
0
0
0
1
Bank 1 only
0
0
1
0
Bank 2 only
0
0
1
1
Bank 3 only
0
1
0
0
Bank 4 only
0
1
0
1
Bank 5 only
0
1
1
0
Bank 6 only
0
1
1
1
Bank 7 only
1
DON’T CARE
DON’T CARE
DON’T CARE
All Banks
7.4.10 Burst Read Operation Followed by Precharge
For the earliest possible precharge, the precharge command may be issued BL/2 clock cycles after a Read
command. For an untruncated burst, BL is the value from the Mode Register. For a truncated burst, BL is the
effective burst length. A new bank active (command) may be issued to the same bank after the Row Precharge time
(tRP). A precharge command cannot be issued until after tRAS is satisfied.
For LPDDR2-S4 devices, the minimum Read to Precharge spacing has also to satisfy a minimum analog time from
the rising clock edge that initiates the last 4-bit prefetch of a Read command. This time is called tRTP (Read to
Precharge).
For LPDDR2-S4 devices, tRTP begins BL/2 - 2 clock cycles after the Read command. If the burst is truncated by a
BST command or a Read command to a different bank, the effective “BL” shall be used to calculate when t RTP
begins.
See 7.4.14.2 “Precharge & Auto Precharge Clarification” table for Read to Precharge timings.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 40 -
W97BH6KB / W97BH2KB
7.4.10.1 Burst Read Followed by Precharge: RL = 3, BL = 8, RU(tRTP(min)/tCK) = 2
T0
T2
T1
T3
T4
T5
T7
T6
T8
CK_t / CK_c
CA0-9
Bank M
Col Addr A Col Addr A
[Cmd]
Read
Bank M
Nop
Nop
Nop
Bank M
Row Addr Row Addr
Nop
Precharge
Nop
Activate
Nop
BL / 2
tRTP
DQS_c
DQS_t
RL = 3
DQS
DOUT A0
DOUT A1
DOUT A3
DOUT A2
DOUT A4
DOUT A5
DOUT A6
DOUT A7
tRP
7.4.10.2 Burst Read Followed by Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 3
T0
T2
T1
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
Bank M
Col Addr A Col Addr A
[Cmd]
Read
Bank M
Nop
Nop
Bank M
Row Addr Row Addr
Precharge
Nop
Nop
Activate
Nop
Nop
BL / 2
DQS_c
DQS_t
DQS
RL = 3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
tRTP=3
tRP
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 41 -
W97BH6KB / W97BH2KB
7.4.11 Burst Write Followed by Precharge
For write cycles, a delay must be satisfied from the time of the last valid burst input data until the Precharge
command may be issued. This delay is known as the write recovery time (tWR) referenced from the completion of the
burst write to the precharge command. No Precharge command to the same bank should be issued prior to the tWR
delay.
LPDDR2-S4 devices write data to the array in prefetch quadruples (prefetch = 4). The beginning of an internal write
operation may only begin after a prefetch group has been latched completely. Therefore, the write recovery time (tWR)
starts at different boundaries.
The minimum Write to Precharge command spacing to the same bank is WL + BL/2 + 1 + RU(tWR/tCK) clock cycles.
For an untruncated burst, BL is the value from the Mode Register. For a truncated burst, BL is the effective burst
length.
See 7.4.14.2 “Precharge & Auto Precharge Clarification” table for Write to Precharge timings.
7.4.11.1 Burst Write Follwed by Precharge: WL = 1, BL = 4
T0
T1
T2
T3
T4
Tx
Tx+1
Ty
Ty+1
CK_t / CK_c
CA0-9
[Cmd]
Bank A
Col Addr
Bank A
Write
Case 1:with tDQSS(max)
DQS_c
DQS_t
Nop
Nop
Nop
Nop
tDQSSmax
Nop
Activate
Nop
tWR
DIN A0
DIN A1
DIN A2
DIN A3
Case 2:with tDQSS(min)
WL = 1
Precharge
Completion of Burst Write
WL = 1
DQS
>=tRP
tDQSSmin
DQS_c
DQS_t
DQS
Bank A
Row Addr Row Addr
Col Addr
tWR
DIN A0
DIN A1
DIN A2
DIN A3
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 42 -
W97BH6KB / W97BH2KB
7.4.12 Auto Precharge Operation
Before a new row in an active bank can be opened, the active bank must be precharged using either the Precharge
command or the auto-precharge function. When a Read or a Write command is given to the LPDDR2 SDRAM, the
AP bit (CA0f) may be set to allow the active bank to automatically begin precharge at the earliest possible moment
during the burst read or write cycle.
If AP is LOW when the Read or Write command is issued, then normal Read or Write burst operation is executed
and the bank remains active at the completion of the burst.
If AP is HIGH when the Read or Write command is issued, then the auto-precharge function is engaged. This feature
allows the precharge operation to be partially or completely hidden during burst read cycles (dependent upon Read
or Write latency) thus improving system performance for random data access.
7.4.13 Burst Read with Auto-Precharge
If AP (CA0f) is HIGH when a Read Command is issued, the Read with Auto-Precharge function is engaged.
LPDDR2-S4 devices start an Auto-Precharge operation on the rising edge of the clock BL/2 or BL/2 - 2 +
RU(tRTP/tCK) clock cycles later than the Read with AP command, whichever is greater. Refer to section 7.4.14.2
“Precharge & Auto Precharge Clarification” table for equations related to Auto-Precharge for LPDDR2-S4.
A new bank Activate command may be issued to the same bank if both of the following two conditions are satisfied
simultaneously.
■ The RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins.
■ The RAS cycle time (tRC) from the previous bank activation has been satisfied.
7.4.13.1 Burst Read with Auto-Precharge: RL = 3, BL = 4, RU(tRTP(min)/tCK) = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
[Cmd]
Bank M
Row Addr Row Addr
Bank M
Col Addr A Col Addr A
Read
Nop
Nop
Nop
Nop
Activate
Nop
Nop
Nop
BL / 2
DQS_c
DQS_t
RL = 3
DQS
DOUT A0
tRTP
DOUT A1
DOUT A2
DOUT A3
>=tRPpb
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 43 -
W97BH6KB / W97BH2KB
7.4.14 Burst Write with Auto-Precharge
If AP (CA0f) is HIGH when a Write Command is issued, the Write with Auto-Precharge function is engaged. The
LPDDR2 SDRAM starts an Auto Precharge operation on the rising edge which is t WR cycles after the completion of
the burst write.
A new bank activate (command) may be issued to the same bank if both of the following two conditions are satisfied.
■ The RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins.
■ The RAS cycle time (tRC) from the previous bank activation has been satisfied.
7.4.14.1 Burst Write with Auto-Precharge: WL = 1, BL = 4
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
[Cmd]
Bank A
Col Addr Col Addr
Write
Bank A
Row Addr Row Addr
Nop
Nop
Nop
Nop
Nop
Activate
Nop
tWR
WL = 1
DQS_c
DQS_t
DQS
Nop
tRPpb
DIN A0
DIN A1
DIN A2
DIN A3
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 44 -
W97BH6KB / W97BH2KB
7.4.14.2 Precharge & Auto Precharge Clarification
From
Command
Read
BST
(for Reads)
Read w/AP
Write
BST
(for Writes)
Write w/AP
Precharge
Precharge All
To Command
Minimum Delay between
“From Command” to “To Command”
Unit
Notes
Precharge (to same Bank as Read)
BL/2 + max(2, RU(tRTP/tCK)) - 2
CLK
1
Precharge All
BL/2 + max(2, RU(tRTP/tCK)) - 2
CLK
1
Precharge (to same Bank as Read)
1
CLK
1
Precharge All
1
CLK
1
Precharge (to same Bank as Read w/AP)
BL/2 + max(2, RU(tRTP/tCK)) - 2
CLK
1, 2
Precharge All
BL/2 + max(2, RU(tRTP/tCK)) - 2
CLK
1
Activate (to same Bank as Read w/AP)
BL/2 + max(2, RU(tRTP/tCK)) - 2 + RU(tRPpb/tCK)
CLK
1
Write or Write w/AP (same bank)
lllegal
CLK
3
Write or Write w/AP (different bank)
RL + BL/2 + RU(tDQSCKmax/tCK) - WL + 1
CLK
3
Read or Read w/AP (same bank)
lllegal
CLK
3
Read or Read w/AP (different bank)
BL/2
CLK
3
Precharge (to same Bank as Write)
WL + BL/2 + RU(tWR/tCK) + 1
CLK
1
Precharge All
WL + BL/2 + RU(tWR/tCK) + 1
CLK
1
Precharge (to same Bank as Write)
WL + RU(tWR/tCK) + 1
CLK
1
Precharge All
WL + RU(tWR/tCK) + 1
CLK
1
Precharge (to same Bank as Write w/AP)
WL + BL/2+ RU(tWR/tCK) + 1
CLK
1
Precharge All
WL + BL/2 + RU(tWR/tCK) + 1
CLK
1
Activate (to same Bank as Write w/AP)
WL + BL/2 + RU(tWR/tCK) + 1 + RU(tRPpb/tCK)
CLK
1
Write or Write w/AP (same bank)
lllegal
CLK
3
Write or Write w/AP (different bank)
BL/2
CLK
3
Read or Read w/AP (same bank)
lllegal
CLK
3
Read or Read w/AP (different bank)
WL + BL/2 + RU(tWTR/tCK) + 1
CLK
3
Precharge (to same Bank as Precharge)
1
CLK
1
Precharge All
1
CLK
1
Precharge
1
CLK
1
Precharge All
1
CLK
1
Notes:
1. For a given bank, the precharge period should be counted from the latest precharge command, either one bank precharge or precharge all,
issued to that bank. The precharge period is satisfied after tRP depending on the latest precharge command issued to that bank.
2. Any command issued during the specified minimum delay time is illegal.
3. After Read with AP, seamless read operations to different banks are supported. After Write with AP, seamless write operations to different banks
are supported. Read w/AP and Write w/AP may not be interrupted or truncated.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 45 -
W97BH6KB / W97BH2KB
7.4.15 Refresh Command
The Refresh command is initiated by having CS_n LOW, CA0 LOW, CA1 LOW, and CA2 HIGH at the rising edge of
clock. Per Bank Refresh is initiated by having CA3 LOW at the rising edge of clock and All Bank Refresh is initiated
by having CA3 HIGH at the rising edge of clock. Per Bank Refresh is only allowed in devices with 8 banks.
A Per Bank Refresh command, REFpb performs a refresh operation to the bank which is scheduled by the bank
counter in the memory device. The bank sequence of Per Bank Refresh is fixed to be a sequential round-robin:
“0-1-2-3-4-5-6-7-0-1-...”. The bank count is synchronized between the controller and the SDRAM upon issuing a
RESET command or at every exit from self refresh, by resetting bank count to zero. The bank addressing for the Per
Bank Refresh count is the same as established in the single-bank Precharge command (See 7.4.9.1 “Bank
Selection for Precharge by Address Bits” table).
A bank must be idle before it can be refreshed. It is the responsibility of the controller to track the bank being
refreshed by the Per Bank Refresh command.
As shown in 7.4.15.1 “Command Scheduling Separations Related to Refresh” table, the REFpb command may
not be issued to the memory until the following conditions have been met:
a) The tRFCab has been satisified after the prior REFab command
b) The tRFCpb has been satisified after the prior REFpb command
c) The tRP has been satisified after prior Precharge commands to that given bank
The tRRD has been satisfied after the prior ACTIVATE command (if applicable, for example after activating a row in a
different bank than affected by the REFpb command).
The target bank is inaccessable during the Per Bank Refresh cycle time (t RFCpb), however other banks within the
device are accessable and may be addressed during the Per Bank Refresh cycle. During the REFpb operation, any
of the banks other than the one being refreshed can be maintained in active state or accessed by a read or a write
command.
When the Per Bank refresh cycle has completed, the affected bank will be in the Idle state.
As shown in 7.4.15.1 “Command Scheduling Separations Related to Refresh” table, after issuing REFpb:
a) The tRFCpb must be satisified before issuing a REFab command
b) The tRFCpb must be satisfied before issuing an ACTIVATE command to the same bank
c) The tRRD must be satisified before issuing an ACTIVATE command to a different bank
d) The tRFCpb must be satisified before issuing another REFpb command
An All Bank Refresh command, REFab performs a refresh operation to all banks. All banks have to be in Idle state
when REFab is issued (for instance, by Precharge all-bank command). REFab also synchronizes the bank count
between the controller and the SDRAM to zero.
As shown in 7.4.15.1 “Command Scheduling Separations Related to Refresh” table, the REFab command may
not be issued to the memory until the following conditions have been met:
a) The tRFCab has been satisified after the prior REFab command
b) The tRFCpb has been satisified after the prior REFpb command
c) The tRP has been satisified after prior Precharge commands
When the All Bank refresh cycle has completed, all banks will be in the Idle state.
As shown in 7.4.15.1 “Command Scheduling Separations Related to Refresh” table, after issuing REFab:
a) The tRFCab latency must be satisfied before issuing an ACTIVATE command
b) The tRFCab latency must be satisfied before issuing a REFab or REFpb command
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 46 -
W97BH6KB / W97BH2KB
7.4.15.1 Command Scheduling Separations Related to Refresh
Symbol
minimum delay from
to
Note
REFab
tRFCab
REFab
Activate cmd to any bank
REFpb
REFab
tRFCpb
REFpb
Activate cmd to same bank as REFpb
REFpb
REFpb
tRRD
Activate
Activate cmd to different bank than REFpb
REFpb affecting an idle bank (different bank than Activate)
1
Activate cmd to different bank than prior Activate
Note:
1. A bank must be in the Idle state before it is refreshed. Therefore, after Activate, REFab is not allowed and REFpb is allowed
only if it affects a bank which is in the Idle state.
7.4.16 LPDDR2 SDRAM Refresh Requirements
(1) Minimum number of Refresh commands:
The LPDDR2 SDRAM requires a minimum number of R Refresh (REFab) commands within any rolling Refresh
Window (tREFW = 32 mS @ MR4[2:0] = “011” or TCASE ≤ 85°C). The required minimum number of Refresh
commands and resulting average refresh interval (tREFI) are given in 8.6.1 “Refresh Requirement Parameters”
table.
See Mode Register 4 for tREFW and tREFI refresh multipliers at different MR4 settings.
(2) Burst Refresh limitation:
To limit maximum current consumption, a maximum of 8 REFab commands may be issued in any rolling tREFBW
(tREFBW = 4 x 8 x tRFCab). This condition does not apply if REFpb commands are used.
(3) Refresh Requirements and Self-Refresh:
If any time within a refresh window is spent in Self-Refresh Mode, the number of required Refresh commands in this
particular window is reduced to:
R* = R - RU{tSRF / tREFI} = R - RU{R * tSRF / tREFW}; where RU stands for the round-up function.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 47 -
W97BH6KB / W97BH2KB
7.4.16.1 Definition of tSRF
A)
tREFW
tSRF
CKE
Enter Self-Refresh
Exit Self-Refresh
tREFW
B)
tSRF
CKE
C)
CKE
tREFW
tSRF
Exit Self-Refresh
D)
Enter Self-Refresh
tREFW
tSRF1
tSRF2
CKE
Exit Self-Refresh Enter Self-Refresh
tSRF=tSRF1+tSRF2
Exit Self-Refresh
Several examples on how tSRF is caclulated:
A: with the time spent in Self-Refresh Mode fully enclosed in the Refresh Window (tREFW).
B: at Self-Refresh entry.
C: at Self-Refresh exit.
D: with several different invervals spent in Self Refresh during one tREFW interval.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 48 -
W97BH6KB / W97BH2KB
In contrast to JESD79 and JESD79-2 and JESD79-3 compliant SDRAM devices, LPDDR2-S4 devices allow
significant flexibiliy in scheduling REFRESH commands, as long as the boundary conditions above are met. In the
most straight forward case a REFRESH command should be scheduled every t REFI. In this case Self-Refresh may
be entered at any time.
The users may choose to deviate from this regular refresh pattern e.g., to enable a period where no refreshes are
required. As an example, using a 1Gb LPDDR2-S4 device, the user can choose to issue a refresh burst of 4096
REFRESH commands with the maximum allowable rate (limited by tREFBW) followed by a long time without any
REFRESH commands, until the refresh window is complete, then repeating this sequence. The achieveable time
without REFRESH commands is given by tREFW - (R / 8) * tREFBW = tREFW - R * 4 * tRFCab.@ TCASE ≤ 85°C this can
be up to 32 mS - 4096 * 4 * 130 nS ≈ 30 mS.
While both - the regular and the burst/pause - patterns can satisfy the refresh requirements per rolling refresh
interval, if they are repeated in every subsequent 32 mS window, extreme care must be taken when transitioning
from one pattern to another to satisfy the refresh requirement in every rolling refresh window during the transition.
Figure of 7.4.16.3 shows an example of an allowable transition from a burst pattern to a regular, distributed pattern. If
this transition happens directly after the burst refresh phase, all rolling tREFW interval will have at least the required
number of refreshes.
Figure of 7.4.16.4 shows an example of a non-allowable transition. In this case the regular refresh pattern starts after
the completion of the pause-phase of the burst/pause refresh pattern. For several rolling tREFW intervals the
minimmun number of REFRESH commands is not satisfied.
The understanding of the pattern transition is extremly relevant (even if in normal operation only one pattern is
employed), as in Self-Refresh-Mode a regular, distributed refresh pattern has to be assumed, which is reflected in
the equation for R* above. Therefore it is recommended to enter Self-Refresh-Mode ONLY directly after the burstphase of a burst/pause refresh pattern as indicated in figure of 7.4.16.5 and begin with the burst phase upon exit
from Self-Refresh.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 49 -
W97BH6KB / W97BH2KB
7.4.16.2 Regular, Distributed Refresh Pattern
tREFBW
12,289
12,288
96 mS
16,384
8,192
64 mS
8,193
32 mS
8,192
4,096
4,097
4,096
0 mS
tREFI
12,288
tREFI
tREFBW
Notes:
1. Compared to repetitive burst Refresh with subsequent Refresh pause.
2. For an example, in a 1Gb LPDDR2 device at TCASE ≤ 85°C, the distributed refresh pattern would have one REFRESH command per 7.8 µS;
the burst refresh pattern would have an average of one refresh command per 0.52 µS followed by ≈30 mS without any REFRESH command.
7.4.16.3 Allowable Transition from Repetitive Burst Refresh
64 mS
12,288
10,240
4,097
4,096
tREFBW
8,192
32 mS
0 mS
tREFI
96 mS
16,384
tREFI
tREFBW
Notes:
1. Shown with subsequent Refresh pause to regular distributed Refresh pattern.
2. For an example, in a 1Gb LPDDR2 device at TCASE ≤ 85°C, the distributed refresh pattern would have one REFRESH command per 7.8 µS;
the burst refresh pattern would have an average of one refresh command per 0.52 µS followed by ≈30 mS without any REFRESH command.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 50 -
W97BH6KB / W97BH2KB
7.4.16.4 NOT-Allowable Transition from Repetitive Burst Refresh
tREFI
64 mS
12,288
96 mS
10,240
8,193
4,097
4,096
8,192
32 mS
0 mS
tREFI
tREFW=32mS
tREFBW
tREFBW
Not enough Refresh commands
In this refresh window!!
Notes:
1. Shown with subsequent Refresh pause to regular distributed Refresh pattern.
2. Only ≈2048 REFRESH commands (< R which is 4096) in the indicated tREFW window.
7.4.16.5 Recommended Self-Refresh Entry and Exit
4,097
4,096
8,192
32 mS
0 mS
Self-Refresh
tREFBW
tREFBW
Note:
1. In conjunction with a Burst/Pause Refresh patterns.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 51 -
W97BH6KB / W97BH2KB
7.4.16.6 All Bank Refresh Operation
T0
T1
T2
T3
T4
Tx
Tx+1
Ty
Ty+1
CK_t / CK_c
AB
CA0-9
[Cmd]
Precharge
Nop
Nop
Nop
REFab
>=tRFCab
>=tRPab
Nop
REFab
ANY
>=tRFCab
7.4.16.7 Per Bank Refresh Operation
T0
Tx
T1
Tx+1
Tx+2
Ty
Ty+1
Tz
Tz+1
CK_t / CK_c
CA0-9
[Cmd]
AB
Precharge
Bank 1
Row A
NOP
NOP
>=tRPab
REFpb
REFpb
ACT
>=tRFCpb
>=tRFCpb
Refresh to Bank 0
Row A
Refresh to Bank 1
Activate command to Bank 1
Notes:
1. In the beginning of this example, the REFpb bank is pointing to Bank 0.
2. Operations to other banks than the bank being refreshed are allowed during the tRFCpb period.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 52 -
W97BH6KB / W97BH2KB
7.4.17 Self Refresh Operation
The Self Refresh command can be used to retain data in the LPDDR2 SDRAM, even if the rest of the system is
powered down. When in the Self Refresh mode, the LPDDR2 SDRAM retains data without external clocking. The
LPDDR2 SDRAM device has a built-in timer to accommodate Self Refresh operation. The Self Refresh Command is
defined by having CKE LOW, CS_n LOW, CA0 LOW, CA1 LOW, and CA2 HIGH at the rising edge of the clock. CKE
must be HIGH during the previous clock cycle. A NOP command must be driven in the clock cycle following the
power-down command. Once the command is registered, CKE must be held LOW to keep the device in Self Refresh
mode.
LPDDR2-S4 devices can operate in Self Refresh in both the Standard or Extended Temperature Ranges. LPDDR2S4 devices will also manage Self Refresh power consumption when the operating temperature changes, lower at low
temperatures and higher temperatures.
Once the LPDDR2 SDRAM has entered Self Refresh mode, all of the external signals except CKE, are “don’t care”.
For proper self refresh operation, power supply pins (VDD1, VDD2, and VDDCA) must be at valid levels. VDDQ may be
turned off during Self-Refresh. Prior to exiting Self-Refresh, VDDQ must be within specified limits. VrefDQ and VrefCA
may be at any level within minimum and maximum levels (see section 8.1 “Absolute Maximum DC Ratings” table).
However prior to exit Self-Refresh, VrefDQ and VrefCA must be within specified limits (see section 8.2.1.1
“Recommended DC Operating Conditions” table). The SDRAM initiates a minimum of one all-bank refresh
command internally within tCKESR period once it enters Self Refresh mode. The clock is internally disabled during
Self Refresh Operation to save power. The minimum time that the LPDDR2 SDRAM must remain in Self Refresh
mode is tCKESR. The user may change the external clock frequency or halt the external clock one clock after Self
Refresh entry is registered; however, the clock must be restarted and stable before the device can exit Self Refresh
operation.
The procedure for exiting Self Refresh requires a sequence of commands. First, the clock shall be stable and within
specified limits for a minmum of 2 clock cycles prior to CKE going back HIGH. Once Self Refresh Exit is registered, a
delay of at least tXSR must be satisfied before a valid command can be issued to the device to allow for any internal
refresh in progress. CKE must remain HIGH for the entire Self Refresh exit period t XSR for proper operation except
for self refresh re-entry. NOP commands must be registered on each positive clock edge during the Self Refresh exit
interval tXSR.
The use of Self Refresh mode introduces the possibility that an internally timed refresh event can be missed when
CKE is raised for exit from Self Refresh mode. Upon exit from Self Refresh, it is required that at least one Refresh
command (8 per-bank or 1 all-bank) is issued before entry into a subsequent Self Refresh.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 53 -
W97BH6KB / W97BH2KB
For LPDDR2 SDRAM, the maximum duration in power-down mode is only limited by the refresh requirements
outlined in section 7.4.16 “LPDDR2 SDRAM Refresh Requirements”, since no refresh operations are performed in
power-down mode.
2 tCK(min)
CK_c
CK_t
tIHCKE
Input clock frequency may be changed
or stopped during Self-Refresh
tIHCKE
CKE
tISCKE
tISCKE
CS_n
[Cmd]
Valid
Enter SR
NOP
Exit SR
NOP
Valid
tXSR(min)
tCKESR(min)
Enter Self-Refresh
NOP
Exit Self-Refresh
Figure of Self Refresh Operation
Notes:
1. Input clock frequency may be changed or stopped during self-refresh, provided that upon exiting self-refresh, a minimum of 2 clocks of stable
clock are provided and the clock frequency is between the minimum and maximum frequency for the particular speed grad
2. Device must be in the “All banks idle” state prior to entering Self Refresh mode.
3. tXSR begins at the rising edge of the clock after CKE is driven HIGH.
4. A valid command may be issued only after tXSR is satisfied. NOPs shall be issued during tXSR.
7.4.18 Partial Array Self-Refresh: Bank Masking
Each bank of LPDDR2 SDRAM can be independently configured whether a self refresh operation is taking place.
One mode register unit of 8 bits accessible via MRW command is assigned to program the bank masking status of
each bank up to 8 banks. For bank masking bit assignments, see section 7.3.13 Mode Register 16
“MR16_PASR_Bank Mask (MA[7:0] = 10H)”.
The mask bit to the bank controls a refresh operation of entire memory within the bank. If a bank is masked via MRW,
a refresh operation to the entire bank is blocked and data retention by a bank is not guaranteed in self refresh mode.
To enable a refresh operation to a bank, a coupled mask bit has to be programmed, “unmasked”. When a bank mask
bit is unmasked, a refresh to a bank is determined by the programmed status of segment mask bits.
7.4.19 Partial Array Self-Refresh: Segment Masking
Segment masking scheme may be used in place of or in combination with bank masking scheme in LPDDR2-S4
SDRAM. The number of segments differ by the density and the setting of each segment mask bit is applied across
all the banks. For segment masking bit assignments, see section 7.3.14 Mode Register 17 “MR17_PASR_Segment
Mask (MA[7:0] = 11H)”.
For those refresh-enabled banks, a refresh operation to the address range which is represented by a segment is
blocked when the mask bit to this segment is programmed, “masked”. Programming of segment mask bits is similar
to the one of bank mask bits.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 54 -
W97BH6KB / W97BH2KB
Table of Example of Bank and Segment Masking use in LPDDR2-S4 devices
Segment Mask(MR17)
BankMask (MR16)
Bank 0 Bank 1 Bank 2 Bank 3 Bank 4 Bank 5 Bank 6 Bank 7
0
1
0
0
0
0
0
1
Segment 0
0
-
M
-
-
-
-
-
M
Segment 1
0
-
M
-
-
-
-
-
M
Segment 2
1
M
M
M
M
M
M
M
M
Segment 3
0
-
M
-
-
-
-
-
M
Segment 4
0
-
M
-
-
-
-
-
M
Segment 5
0
-
M
-
-
-
-
-
M
Segment 6
0
-
M
-
-
-
-
-
M
Segment 7
1
M
M
M
M
M
M
M
M
Note:
This table illustrates an example of an 8-bank LPDDR2-S4 device, when a refresh operation to bank 1 and bank 7, as well as segment 2 and
segment 7 are masked
7.4.20 Mode Register Read Command
The Mode Register Read command is used to read configuration and status data from mode registers. The Mode
Register Read (MRR) command is initiated by having CS_n LOW, CA0 LOW, CA1 LOW, CA2 LOW, and CA3 HIGH
at the rising edge of the clock. The mode register is selected by {CA1f-CA0f, CA9r-CA4r}. The mode register
contents are available on the first data beat of DQ[0:7], RL * tCK + tDQSCK + tDQSQ after the rising edge of the clock
where the Mode Register Read Command is issued. Subsequent data beats contain valid, but undefined content,
except in the case of the DQ Calibration function DQC, where subsequent data beats contain valid content as
described in section 7.4.21.2 “DQ Calibration”. All DQS_t, DQS_c shall be toggled for the duration of the Mode
Register Read burst.
The MRR command has a burst length of four. The Mode Register Read operation (consisting of the MRR command
and the corresponding data traffic) shall not be interrupted. The MRR command period (t MRR) is 2 clock cycles.
Mode Register Reads to reserved and write-only registers shall return valid, but undefined content on all data beats
and DQS_t, DQS_c shall be toggled.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 55 -
W97BH6KB / W97BH2KB
7.4.20.1 Mode Register Read Timing Example: RL = 3, tMRR = 2
T0
T2
T1
T3
T4
T5
T7
T6
T8
CK_t / CK_c
CA0-9
[Cmd]
DQS_t
DQS_c
Reg A
Reg A
Reg B
MRR
Reg B
MRR
tMRR = 2
tMRR = 2
RL = 3
DQ[0-7]
DQ[8-max]
DOUT A
UNDEF
UNDEF
UNDEF
DOUT B
UNDEF
UNDEF
UNDEF
UNDEF
UNDEF
UNDEF
UNDEF
UNDEF
UNDEF
UNDEF
UNDEF
CMD not allowed
Notes:
1. Mode Register Read has a burst length of four.
2. Mode Register Read operation shall not be interrupted.
3. Mode Register data is valid only on DQ[0-7] on the first beat. Subsequent beats contain valid, but undefined data. DQ[8-max] contain valid, but
undefined data for the duration of the MRR burst.
4. The Mode Register Command period is tMRR. No command (other than Nop) is allowed during this period.
5. Mode Register Reads to DQ Calibration registers MR32 and MR40 are described in the section on DQ Calibration.
6. Minimum Mode Register Read to write latency is RL + RU(t DQSCKmax/tCK) + 4/2 + 1 - WL clock cycles.
7. Minimum Mode Register Read to Mode Register Write latency is RL + RU(tDQSCKmax/tCK) + 4/2 + 1 clock cycles.
The MRR command shall not be issued earlier than BL/2 clock cycles after a prior Read command and WL + 1 +
BL/2 + RU( tWTR/tCK) clock cycles after a prior Write command, because read-bursts and write-bursts shall not be
truncated by MRR. Note that if a read or write burst is truncated with a Burst Terminate (BST) command, the
effective burst length of the truncated burst should be used as “BL”.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 56 -
W97BH6KB / W97BH2KB
7.4.20.2 Read to MRR Timing Example: RL = 3, tMRR = 2
T0
T2
T1
T3
T4
T5
T7
T6
T8
CK_t / CK_c
CA0-9
BA M
Col Addr A
[Cmd]
Col Addr A
Reg B
Read
Reg B
MRR
tMRR = 2
BL / 2
DQS_c
DQS_t
RL = 3
DQ[0-7]
DQ[8-max]
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT B
UNDEF
UNDEF
UNDEF
DOUT A0
DOUT A1
DOUT A2
DOUT A3
UNDEF
UNDEF
UNDEF
UNDEF
CMD not allowed
Notes:
1. The minimum number of clocks from the burst read command to the Mode Register Read command is BL/2.
2. The Mode Register Read Command period is tMRR. No command (other than Nop) is allowed during this period.
7.4.20.3 Burst Write Followed by MRR: RL = 3, WL = 1, BL = 4
T1
T0
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
[Cmd]
BA N
Col Addr A
Reg B
Col Addr A
Write
Reg B
MRR
RL = 3
DQS_c
DQS_t
tWTR
WL = 1
DIN A0
DIN A1
DIN A2
tMRR = 2
DIN A3
CMD not allowed
Notes:
1. The minimum number of clock cycles from the burst write command to the Mode Register Read command is [WL + 1 + BL/2 + RU( tWTR/tCK)].
2. The Mode Register Read Command period is tMRR. No command (other than Nop) is allowed during this period.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 57 -
W97BH6KB / W97BH2KB
7.4.21 Temperature Sensor
LPDDR2 SDRAM features a temperature sensor whose status can be read from MR4. This sensor can be used to
determine an appropriate refresh rate, determine whether AC timing derating is required in the Extended
Temperature Range and/or monitor the operating temperature. Either the temperature sensor or the device operating
temperature (See 8.2.3 “Operating Temperature Conditions” table) may be used to determine whether operating
temperature requirements are being met.
LPDDR2 devices shall monitor device temperature and update MR4 according to t TSI. Upon exiting self-refresh or
power-down, the device temperature status bits shall be no older than tTSI.
When using the temperature sensor, the actual device case temperature may be higher than the operating
temperature specification (See 8.2.3 “Operating Temperature Conditions” table) that applies for the Standard or
Extended Temperature Ranges. For example, TCASE may be above 85°C when MR4[2:0] equals 011b.
To assure proper operation using the temperature sensor, applications should consider the following factors:
TempGradient is the maximum temperature gradient experienced by the memory device at the temperature of
interest over a range of 2°C.
ReadInterval is the time period between MR4 reads from the system.
TempSensorInterval (tTSI) is maximum delay between internal updates of MR4.
SysRespDelay is the maximum time between a read of MR4 and the response by the system.
LPDDR2 devices shall allow for a 2°C temperature margin between the point at which the device temperature enters
the Extended Temperature Range and point at which the controller re-configures the system accordingly.
In order to determine the required frequency of polling MR4, the system shall use the maximum TempGradient and
the maximum response time of the system using the following equation:
TempGradient x (ReadInterval + tTSI + SysRespDelay) ≤ 2°C
Table of Temperature Sensor
Symbol
Parameter
Max/Min
Value
Unit
TempGradient
System Temperature Gradient
Max
System Dependent
°C/S
ReadInterval
MR4 Read Interval
Max
System Dependent
mS
tTSI
Temperature Sensor Interval
Max
32
mS
SysRespDelay
System Response Delay
Max
System Dependent
mS
TempMargin
Device Temperature Margin
Max
2
ºC
For example, if TempGradient is 10°C/s and the SysRespDelay is 1 mS:
10°C/s x (ReadInterval + 32mS + 1mS) ≤ 2°C
In this case, ReadInterval shall be no greater than 167 mS.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 58 -
W97BH6KB / W97BH2KB
7.4.21.1 Temperature Sensor Timing
Temp
< (tTSI + Readlnterval + SysRespDelay)
Device
Temp
Margin
p
Tem
2°C
ien
Grad
t
MR4
Trip Level
tTSI
MR4=0x03
MR4=0x86
MR4=0x86
MR4=0x86
MR4=0x86
Temperature
Sensor
Update
MRR MR4=0x03
Time
SysRespDelay
Readlnterval
Host
MR4 Read
MR4=0x06
MRR MR4=0x86
7.4.21.2 DQ Calibration
LPDDR2 device features a DQ Calibration function that outputs one of two predefined system timing calibration
patterns. A Mode Register Read to MR32 (Pattern “A”) or MR40 (Pattern “B”) will return the specified pattern on
DQ[0] and DQ[8] for x16 devices, and DQ[0], DQ[8], DQ[16 ], and DQ[24] for x32 devices.
For x16 devices, DQ[7:1] and DQ[15:9] may optionally drive the same information as DQ[0] or may drive 0b during
the MRR burst. For x32 devices, DQ[7:1], DQ[15:9], DQ[23:17], and DQ[31:25] may optionally drive the same
information as DQ[0] or may drive 0b during the MRR burst.
For LPDDR2-S4 devices, MRR DQ Calibration commands may only occur in the Idle state.
Table of Data Calibration Pattern Description
Pattern
MR#
Bit Time 0 Bit Time 1 Bit Time 2 Bit Time 3
Description
Pattern A
MR32
1
0
1
0
Read to MR32 return DQ calibration pattern A
Pattern B
MR40
0
0
1
1
Read to MR40 return DQ calibration pattern B
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 59 -
W97BH6KB / W97BH2KB
7.4.21.3 MR32 and MR40 DQ Calibration Timing Example: RL = 3, tMRR = 2
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK_t / CK_c
CA0-9
[Cmd]
DQS_t
DQS_c
Reg 32
Reg 32
Reg 40
MRR32
Reg 40
MRR40
tMRR = 2
tMRR = 2
RL = 3
DQ[0]
1
0
1
0
0
0
1
1
DQ[7:1]
1
0
1
0
0
0
1
1
Pattern “B”
Pattern “A”
x16
DQ[8]
1
0
1
0
0
0
1
1
DQ[15:9]
1
0
1
0
0
0
1
1
x32
DQ[16]
1
0
1
0
0
0
1
1
DQ[23:17]
1
0
1
0
0
0
1
1
DQ[24]
1
0
1
0
0
0
1
1
DQ[31:25]
1
0
1
0
0
0
1
1
CMD not allowed
Optionally driven the same as DQ0 or to 0b
Notes:
1. Mode Register Read has a burst length of four.
2. Mode Register Read operation shall not be interrupted.
3. Mode Register Reads to MR32 and MR40 drive valid data on DQ[0] during the entire burst. For x16 devices, DQ[8] shall drive the same
information as DQ[0] during the burst. For x32 devices, DQ[8], DQ[16], and DQ[24] shall drive the same information as DQ[0] during the burst.
4. For x16 devices, DQ[7:1] and DQ[15:9] may optionally drive the same information as DQ[0] or they may drive 0b during the burst.
For x32 devices, DQ[7:1], DQ[15:9], DQ[23:17], and DQ[31:25] may optionally drive the same information as DQ[0] or they may drive 0b
during the burst.
5. The Mode Register Command period is tMRR. No command (other than Nop) is allowed during this period.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 60 -
W97BH6KB / W97BH2KB
7.4.22 Mode Register Write Command
The Mode Register Write command is used to write configuration data to mode registers. The Mode Register Write
(MRW) command is initiated by having CS_n LOW, CA0 LOW, CA1 LOW, CA2 LOW, and CA3 LOW at the rising
edge of the clock. The mode register is selected by {CA1f-CA0f, CA9r-CA4r}. The data to be written to the mode
register is contained in CA9f-CA2f. The MRW command period is defined by t MRW. Mode Register Writes to readonly registers shall have no impact on the functionality of the device.
For LPDDR2-S4 devices, the MRW may only be issued when all banks are in the idle precharge state. One method
of ensuring that the banks are in the idle precharge state is to issue a Precharge-All command.
7.4.22.1 Mode Register Write Timing Example: RL = 3, tMRW = 5
T1
T0
T2
Tx + 1
Tx
Tx + 2
Ty
Ty + 1
Ty + 2
CK_t / CK_c
CA0-9
MR Addr MR Data
MR Addr MR Data
[Cmd]
MRW
MRW
ANY
tMRW
tMRW
CMD not allowed
Notes:
1. The Mode Register Write Command period is tMRW . No command (other than Nop) is allowed during this period.
2. At time Ty, the device is in the idle state.
7.4.22.2 Truth Table for Mode Register Read (MRR) and Mode Register Write (MRW)
Current State
All Banks Idle
Bank(s) Active
Command
Intermediate State
Next State
MRR
Mode Register Reading (All Banks Idle)
All Banks Idle
MRW
Mode Register Writing (All Banks Idle)
All Banks Idle
MRW (RESET)
Resetting (Device Auto-Initialization)
All Banks Idle
MRR
Mode Register Reading (Bank(s) Active)
Bank(s) Active
MRW
Not Allowed
Not Allowed
MRW (RESET)
Not Allowed
Not Allowed
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 61 -
W97BH6KB / W97BH2KB
7.4.23 Mode Register Write Reset (MRW Reset)
Any MRW command issued to MRW63 initiates an MRW Reset. The MRW Reset command brings the device to the
Device Auto-Initialization (Resetting) State in the Power-On Initialization sequence (see step 3 in sections 7.2.1
“Power Ramp and Device Initialization”). The MRW Reset command may be issued from the Idle state for
LPDDR2-S4 devices. This command resets all Mode Registers to their default values. No commands other than
NOP may be issued to the LPDDR2 device during the MRW Reset period (tINIT4). After MRW Reset, boot timings
must be observed until the device initialization sequence is complete and the device is in the Idle state. Array data
for LPDDR2-S4 devices are undefined after the MRW Reset command.
For the timing diagram related to MRW Reset, refer to 7.2.3 “Power Ramp and Initialization Sequence” figure.
7.4.24 Mode Register Write ZQ Calibration Command
The MRW command is also used to initiate the ZQ Calibration command. The ZQ Calibration command is used to
calibrate the LPDDR2 ouput drivers (RON) over process, temperature, and voltage. LPDDR2-S4 devices support ZQ
Calibration.
There are four ZQ Calibration commands and related timings times, tZQINIT, tZQRESET, tZQCL, and tZQCS. tZQINIT
corresponds to the initialization calibration, tZQRESET for resetting ZQ setting to default, tZQCL is for long calibration,
and tZQCS is for short calibration. See Mode Register 10 (MR10) for description on the command codes for the
different ZQ Calibration commands.
The Initialization ZQ Calibration (ZQINIT) shall be performed for LPDDR2-S4 devices. This Initialization Calibration
achieves a RON accuracy of ±15%. After initialization, the ZQ Long Calibration may be used to re-calibrate the
system to a RON accuracy of ±15%. A ZQ Short Calibration may be used periodically to compensate for temperature
and voltage drift in the system.
The ZQReset Command resets the RON calibration to a default accuracy of ±30% across process, voltage, and
temperature. This command is used to ensure RON accuracy to ±30% when ZQCS and ZQCL are not used.
One ZQCS command can effectively correct a minimum of 1.5% (ZQCorrection) of RON impedance error within
tZQCS for all speed bins assuming the maximum sensitivities specified in the ‘Output Driver Voltage and Temperature
Sensitivity’. The appropriate interval between ZQCS commands can be determined from these tables and other
application-specific parameters.
One method for calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and voltage
(Vdriftrate) drift rates that the LPDDR2 is subject to in the application, is illustrated. The interval could be defined by
the following formula:
ZQCorrection
(TSens × Tdriftrate ) + (VSens × Vdriftrate )
where TSens = max(dRONdT) and VSens = max(dRONdV) define the LPDDR2 temperature and voltage
sensitivities.
For example, if TSens = 0.75% / C, VSens = 0.20% / mV, Tdriftrate = 1C / sec and Vdriftrate = 15 mV / sec, then
the interval between ZQCS commands is calculated as:
1.5
= 0.4s
(0.75 × 1) + (0.20 × 15)
For LPDDR2-S4 devices, a ZQ Calibration command may only be issued when the device is in Idle state with all
banks precharged.
No other activities can be performed on the LPDDR2 data bus during the calibration period (tZQINIT, tZQCL, tZQCS).
The quiet time on the LPDDR2 data bus helps to accurately calibrate RON. There is no required quiet time after the
ZQ Reset command. If multiple devices share a single ZQ Resistor, only one device may be calibrating at any given
time. After calibration is achieved, the LPDDR2 device shall disable the ZQ pin’s current consumption path to reduce
power.
In systems that share the ZQ resistor between devices, the controller must not allow overlap of tZQINIT, tZQCS, or
tZQCL between the devices. ZQ Reset overlap is allowed. If the ZQ resistor is absent from the system, ZQ shall be
connected to VDDCA. In this case, the LPDDR2 device shall ignore ZQ calibration commands and the device will use
the default calibration settings (See section 8.2.6.5 “RONPU and RONPD Characteristics without ZQ Calibration”
Output Driver DC Electrical Characteristics without ZQ Calibration table).
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 62 -
W97BH6KB / W97BH2KB
7.4.24.1 ZQ Calibration Initialization Timing Example
T0
T1
T2
T3
T4
T5
Tx
Tx+1
Tx+2
Tx+1
Tx+2
CK_t / CK_c
CA0-9
MR Addr MR Data
[Cmd]
MRW
ANY
tZQINIT
CMD not allowed
Notes:
1. The ZQ Calibration Initialization period is tZQINIT. No command (other than Nop) is allowed during this period.
2. CKE must be continuously registered HIGH during the calibration period.
3. All devices connected to the DQ bus should be high impedance during the calibration process.
7.4.24.2 ZQ Calibration Short Timing Example
T0
T1
T2
T3
T4
T5
Tx
CK_t / CK_c
CA0-9
[Cmd]
MR Addr MR Data
MRW
ANY
tZQCS
CMD not allowed
Notes:
1. The ZQ Calibration Short period is tZQCS. No command (other than Nop) is allowed during this period.
2. CKE must be continuously registered HIGH during the calibration period.
3. All devices connected to the DQ bus should be high impedance during the calibration process.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 63 -
W97BH6KB / W97BH2KB
7.4.24.3 ZQ Calibration Long Timing Example
T0
T1
T2
T3
T4
T5
Tx
Tx+1
Tx+2
CK_t / CK_c
CA0-9
MR Addr MR Data
[Cmd]
MRW
ANY
tZQCL
CMD not allowed
Notes:
1. The ZQ Calibration Long period is tZQCL. No command (other than Nop) is allowed during this period.
2. CKE must be continuously registered HIGH during the calibration period.
3. All devices connected to the DQ bus should be high impedance during the calibration process.
7.4.24.4 ZQ Calibration Reset Timing Example
T0
T1
T2
T3
T4
T5
Tx
Tx+1
Tx+2
CK_t / CK_c
CA0-9
[Cmd]
MR Addr MR Data
MRW
ANY
tZQRESET
CMD not allowed
Notes:
1. The ZQ Calibration Reset period is tZQRESET. No command (other than Nop) is allowed during this period.
2. CKE must be continuously registered HIGH during the calibration period.
3. All devices connected to the DQ bus should be high impedance during the calibration process.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 64 -
W97BH6KB / W97BH2KB
7.4.24.5 ZQ External Resistor Value, Tolerance, and Capacitive Loading
To use the ZQ Calibration function, a 240 Ohm ± 1% tolerance external resistor must be connected between the ZQ
pin and ground. A single resistor can be used for each LPDDR2 device or one resistor can be shared between
multiple LPDDR2 devices if the ZQ calibration timings for each LPDDR2 device do not overlap. The total capacitive
loading on the ZQ pin must be limited (See section 8.2.6.7 “Input/Output Capacitance” table).
7.4.25 Power-Down
For LPDDR2 SDRAM, power-down is synchronously entered when CKE is registered LOW and CS_n HIGH at the
rising edge of clock. CKE must be registered HIGH in the previous clock cycle. A NOP command must be driven in
the clock cycle following the power-down command. CKE is not allowed to go LOW while mode register, read, or
write operations are in progress. CKE is allowed to go LOW while any of other operations such as row activation,
preactive, precharge, autoprecharge, or refresh is in progress, but power-down IDD spec will not be applied until
finishing those operations. Timing diagrams are shown in the following pages with details for entry into power down.
For LPDDR2 SDRAM, if power-down occurs when all banks are idle, this mode is referred to as idle power- down; if
power-down occurs when there is a row active in any bank, this mode is referred to as active power-down.
Entering power-down deactivates the input and output buffers, excluding CK_t, CK_c, and CKE. In power-down
mode, CKE must be maintained LOW while all other input signals are “Don’t Care”. CKE LOW must be maintained
until tCKE has been satisfied. VREF must be maintained at a valid level during power down.
VDDQ may be turned off during power down. If VDDQ is turned off, then VREFDQ must also be turned off. Prior to
exiting power down, both VDDQ and VREFDQ must be within their respective min/max operating ranges (See 8.2.1.1
“Recommended DC Operating Conditions” table).
For LPDDR2 SDRAM, the maximum duration in power-down mode is only limited by the refresh requirements
outlined in section 7.4.16 “LPDDR2 SDRAM Refresh Requirements”, as no refresh operations are performed in
power-down mode.
The power-down state is exited when CKE is registered HIGH. The controller shall drive CS_n HIGH in conjunction
with CKE HIGH when exiting the power-down state. CKE HIGH must be maintained until tCKE has been satisfied. A
valid, executable command can be applied with power-down exit latency, tXP after CKE goes HIGH. Power-down exit
latency is defined in section 8.7.1 “LPDDR2 AC Timing” table.
7.4.25.1 Basic Power Down Entry and Exit Timing
2 tCK (min)
CK_c
CK_t
tIHCKE
Input clock frequency may be changed
or the input clock stopped during Power-Down
CKE
tIHCKE
tISCKE
tISCKE
CS_n
[CMD]
Valid
Enter
PD
Exit
PD
NOP
Valid
Valid
tXP(min)
tCKE(min)
Enter Power-Down mode
NOP
Exit Power-Down mode
tcKE(min)
Note:
Input clock frequency may be changed or the input clock stopped during power-down, provided that upon exiting power-down, the clock is stable
and within specified limits for a minmum of 2 clock cycles prior to power-down exit and the clock frequency is between the minimum and maximum
frequency for the particular speed grade.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 65 -
W97BH6KB / W97BH2KB
7.4.25.2 CKE Intensive Environment
CK_c
CK_t
tCKE
tCKE
CKE
tCKE
tCKE
7.4.25.3 Refresh to Refresh Timing with CKE Intensive Environment
CK_c
CK_t
CKE
tCKE
tCKE
tXP
[Cmd]
tCKE
REF
tCKE
tXP
REF
tREFI
Note:
The pattern shown above can repeat over a long period of time. With this pattern, LPDDR2 SDRAM guarantees all AC and DC timing & voltage
specifications with temperature and voltage drift.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 66 -
W97BH6KB / W97BH2KB
7.4.25.4 Read to Power-Down Entry
T0
CK_c
CK_t
[Cmd]
T1
T2
Tx+1
Tx
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
Read operation starts with a read command and
CKE should be kept HIGH until the end of burst operation.
RD
CKE
RL
DQ
Q
Q Q
tISCKE
Q
DQS_t
DQS_c
T0
[Cmd]
T1
T2
Tx+1
Tx
Tx+2
Tx+3
RD
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
CKE should be kept HIGH until the end of burst operation.
CKE
RL
DQ
DQS_t
DQS_c
Q Q
Q Q
Q
tISCKE
Q Q Q
Note:
CKE may be registered LOW RL + RU(tDQSCK(MAX)/tCK)+ BL/2 + 1 clock cycles after the clock on which the Read command is Registered.
7.4.25.5 Read with Auto Precharge to Power-Down Entry
T0
T1
T2
Tx+1
Tx
CK_c
CK_t
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
Start internal precharge
[Cmd]
RDA
PRE
BL = 4
CKE should be kept HIGH
until the end of burst operation.
BL/2
With tRTP = 7.5ns
& tRAS min satisfied
CKE
RL
tISCKE
DQ
Q
Q
Q
Q
DQS_t
DQS_c
T0
T1
T2
Tx
Tx+1
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
Start internal precharge
[Cmd]
RDA
BL = 8
CKE
DQ
PRE
CKE should be kept HIGH
until the end of burst operation.
BL/2
With tRTP = 7.5ns
& tRAS min satisfied
RL
tISCKE
Q
Q
Q
Q
Q
Q
Q
Q
DQS_t
DQS_c
Note:
CKE may be registered LOW RL + RU(tDQSCK(MAX)/tCK)+ BL/2 + 1 clock cycles after the clock on which the Read command is registered.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 67 -
W97BH6KB / W97BH2KB
7.4.25.6 Write to Power-Down Entry
T0
T1
Tm
Tm+1
Tm+2
Tm+3
Tx+1
Tx
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+2
Tx+3
Tx+4
CK_c
CK_t
[Cmd]
WR
BL = 4
CKE
WL
DQ
D
D
D
tISCKE
D
tWR
DQS_t
DQS_c
T0
T1
[Cmd]
Tm
Tm+1
Tm+2
Tm+3
Tm+4
D
D
Tm+5
Tx
Tx+1
WR
BL = 8
CKE
WL
DQ
D
D
D
D
D
tISCKE
D
tWR
DQS_t
DQS_c
Note:
CKE may be registered LOW WL + 1 + BL/2 + RU(tWR/tCK) clock cycles after the clock on which the Write command is registered.
7.4.25.7 Write with Auto Precharge to Power-Down Entry
T0
CK_c
CK_t
[Cmd]
T1
Tm
Tm+1
Tm+2
Tm+3
Tx+1
Tx
WRA
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Start Internal Precharge
PRE
BL = 4
CKE
WL
DQ
D
D
D
tISCKE
D
tWR
DQS_t
DQS_c
T0
T1
Tm
Tm+1
Tm+2
Tm+3
Tm+4
Tm+5
Tx
Tx+1
Tx+2
Tx+3
Tx+4
CK_c
CK_t
[Cmd]
PRE
WRA
Start Internal Precharge
CKE
DQ
DQS_t
DQS_c
BL = 8
WL
D
D
D
D
D
D
D
tISCKE
D
tWR
Note:
CKE may be registered LOW WL + 1 + BL/2 + RU(tWR/tCK) + 1 clock cycles after the Write command is registered.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 68 -
W97BH6KB / W97BH2KB
7.4.25.8 Refresh Command to Power-Down Entry
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK_c
CK_t
[Cmd]
REF
CKE
tIHCKE
tISCKE
Note:
CKE may go LOW tIHCKE after the clock on which the Refresh command is registered.
7.4.25.9 Activate Command to Power-Down Entry
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T7
T8
T9
T10
T11
CK_c
CK_t
[Cmd]
ACT
CKE
tIHCKE
tISCKE
Note:
CKE may go LOW tIHCKE after the clock on which the Activate command is registered.
7.4.25.10 Precharge/Precharge-All Command to Power-Down Entry
T0
T1
T2
T3
T4
T5
T6
CK_c
CK_t
[Cmd]
PRE
CKE
tIHCKE
tISCKE
Note:
CKE may go LOW tIHCKE after the clock on which the Precharge/Precharge-All command is registered.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 69 -
W97BH6KB / W97BH2KB
7.4.25.11 Mode Register Read to Power-Down Entry
T0
T1
T2
Tx+1
Tx
Tx+2
Tx+3
Tx+4
Tx+5
Tx+6
Tx+7
Tx+8
Tx+9
CK_c
CK_t
Mode Register Read operation starts with a MRR command and
[Cmd]
MRR
CKE
CKE should be kept HIGH until the end of burst operation.
RL
tISCKE
DQ
Q
Q
Q
Q
DQS_t
DQS_c
Note:
CKE may be registered LOW RL + RU(tDQSCK(MAX)/tCK)+ BL/2 + 1 clock cycles after the clock on which the Mode Register Read command is
registered.
7.4.25.12 MRW Command to Power-Down Entry
T0
T1
T3
T2
T4
T5
T6
T7
T8
T9
T10
T11
CK_c
CK_t
[Cmd]
MRW
CKE can go to LOW tMRW after a Mode Register Write command
CKE
tISCKE
tMRW
Note:
CKE may be registered LOW tMRW after the clock on which the Mode Register Write command is registered.
7.4.26 Deep Power-Down
Deep Power-Down is entered when CKE is registered LOW with CS_n LOW, CA0 HIGH, CA1 HIGH, and CA2 LOW
at the rising edge of clock. A NOP command must be driven in the clock cycle following the power-down command.
CKE is not allowed to go LOW while mode register, read, or write operations are in progress. All banks must be in
idle state with no activity on the data bus prior to entering the Deep Power Down mode. During Deep Power-Down,
CKE must be held LOW.
In Deep Power-Down mode, all input buffers except CKE, all output buffers, and the power supply to internal circuitry
may be disabled within the SDRAM. All power supplies must be within specified limits prior to exiting Deep PowerDown. VrefDQ and VrefCA may be at any level within minimum and maximum levels (See 8.1 “Absolute Maximum
DC Ratings”). However prior to exiting Deep Power-Down, Vref must be within specified limits (See 8.2.1.1
“Recommended DC Operating Conditions”).
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 70 -
W97BH6KB / W97BH2KB
The contents of the SDRAM may be lost upon entry into Deep Power-Down mode.
The Deep Power-Down state is exited when CKE and CS_n are registered HIGH, while meeting tISCKE with a stable
clock input. The SDRAM must be fully re-initialized by controller as described in the Power up initialization
Sequence. The SDRAM is ready for normal operation after the initialization sequence.
7.4.26.1 Deep Power Down Entry and Exit Timing
Tc
2 tCK (min)
CK_c
CK_t
tIHCKE
Input clock frequency may be changed
or the input clock stopped during Deep Power-Down
CKE
tINIT3 = 200 μs (min)
tISCKE
tISCKE
CS_n
[Cmd]
NOP
Enter
DPD
Exit NOP
NOP
DPD
NOP
tRP
Reset
tDPD
Exit Deep Power-Down mode
Enter Deep Power-Down mode
Notes:
1. Initialization sequence may start at any time after TC.
2. tINIT3 and TC refer to timings in the LPDDR2 initialization sequence. For more detail, see section 7.2 “Power-up, Initialization, and PowerOff”.
3. Input clock frequency may be changed or the input clock stopped during deep power-down, provided that upon exiting deep power-down, the
clock is stable and within specified limits for a minmum of 2 clock cycles prior to deep power-down exit and the clock frequency is between the
minimum and maximum frequency for the particular speed grade.
7.4.27 Input Clock Stop and Frequency Change
LPDDR2 devices support input clock frequency change during CKE LOW under the following conditions:
• tCK(abs)min is met for each clock cycle;
• Refresh Requirements apply during clock frequency change;
• During clock frequency change, only REFab or REFpb commands may be executing;
• Any Activate, or Precharge commands have executed to completion prior to changing the frequency;
• The related timing conditions (tRCD, tRP) have been met prior to changing the frequency;
• The initial clock frequency shall be maintained for a minimum of 2 clock cycles after CKE goes LOW;
• The clock satisfies tCH(abs) and tCL(abs) for a minimum of 2 clock cycles prior to CKE going HIGH.
After the input clock frequency is changed and CKE is held HIGH, additional MRW commands may be required to
set the WR, RL etc. These settings may need to be adjusted to meet minimum timing requirements at the target
clock frequency.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 71 -
W97BH6KB / W97BH2KB
LPDDR2 devices support clock stop during CKE LOW under the following conditions:
• CK_t is held LOW and CK_c is held HIGH during clock stop;
• Refresh Requirements apply during clock stop;
• During clock stop, only REFab or REFpb commands may be executing;
• Any Activate, or Precharge commands have executed to completion prior to stopping the clock;
• The related timing conditions (tRCD, tRP) have been met prior to stopping the clock;
• The initial clock frequency shall be maintained for a minimum of 2 clock cycles after CKE goes LOW;
• The clock satisfies tCH(abs) and tCL(abs) for a minimum of 2 clock cycles prior to CKE going HIGH.
LPDDR2 devices support input clock frequency change during CKE HIGH under the following conditions:
• tCK(abs)min is met for each clock cycle;
• Refresh Requirements apply during clock frequency change;
• Any Activate, Read, Write, Precharge, Mode Register Write, or Mode Register Read commands must have
executed to completion, including any associated data bursts prior to changing the frequency;
• The related timing conditions (tRCD, tWR, tWRA, tRP, tMRW , tMRR, etc.) have been met prior to changing the
frequency;
• CS_n shall be held HIGH during clock frequency change;
• During clock frequency change, only REFab or REFpb commands may be executing;
• The LPDDR2 device is ready for normal operation after the clock satisfies t CH(abs) and tCL(abs) for a minimum of
2tCK + tXP.
After the input clock frequency is changed, additional MRW commands may be required to set the WR, RL etc.
These settings may need to be adjusted to meet minimum timing requirements at the target clock frequency.
LPDDR2 devices support clock stop during CKE HIGH under the following conditions:
• CK_t is held LOW and CK_c is held HIGH during clock stop;
• CS_n shall be held HIGH during clock clock stop;
• Refresh Requirements apply during clock stop;
• During clock stop, only REFab or REFpb commands may be executing;
• Any Activate, Read, Write, Precharge, Mode Register Write, or Mode Register Read commands must have
executed to completion, including any associated data bursts prior to stopping the clock;
• The related timing conditions (tRCD, tWR, tWRA, tRP, tMRW , tMRR, etc.) have been met prior to stopping the clock;
• The LPDDR2 device is ready for normal operation after the clock is restarted and satisfies t CH(abs) and tCL(abs) for a
minimum of 2tCK + tXP.
7.4.28 No Operation Command
The purpose of the No Operation command (NOP) is to prevent the LPDDR2 device from registering any unwanted
command between operations. Only when the CKE level is constant for clock cycle N-1 and clock cycle N, a NOP
command may be issued at clock cycle N. A NOP command has two possible encodings:
1. CS_n HIGH at the clock rising edge N.
2. CS_n LOW and CA0, CA1, CA2 HIGH at the clock rising edge N.
The No Operation command will not terminate a previous operation that is still executing, such as a burst read or
write cycle.
7.5
Truth Tables
The truth tables provide complementary information to the state diagram, they clarify the device behavior and the
applied restrictions when considering the actual state of all the Banks.
Operation or timing that is not specified is illegal, and after such an event, in order to guarantee proper operation, the
LPDDR2 device must be powered down and then restarted through the specified initialization sequence before
normal operation can continue.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 72 -
W97BH6KB / W97BH2KB
7.5.1
Command Truth Table
Command Pins
Command
MRW
MRR
CKE
CK_t(n-1)
CK_t(n)
H
H
H
Refresh
(per bank)11
H
Refresh
(all bank)
H
Enter
Self Refresh
DDR CA Pins (10)
CS_N
CA0
CA1
CA2
CA3
CA4
CA5
CA6
CA7
CA8
CA9
L
L
L
L
L
MA0
MA1
MA2
MA3
MA4
MA5
X
MA6
MA7
OP0
OP1
OP2
OP3
OP4
OP5
OP6
OP7
L
L
L
L
H
MA0
MA1
MA2
MA3
MA4
MA5
X
MA6
MA7
L
L
L
H
X
H
L
L
X
L
L
H
H
H
L
X
L
L
H
X
L
X
Write
(bank)
H
Read
(bank)
H
Precharge
(per bank, all bank)
H
BST
H
X
X
L
L
H
R8
R9
R10
R11
R12
BA0
BA1
BA2
X
R0
R1
R2
R3
R4
R5
R6
R7
R13
R14
L
H
L
L
RFU
RFU
C1
C2
BA0
BA1
BA2
X
AP*3,4
C3
C4
C5
C6
C7
C8
C9
C10
C11
L
H
L
H
RFU
RFU
C1
C2
BA0
BA1
BA2
X
AP*3,4
C3
C4
C5
C6
C7
C8
C8
C10
C11
L
H
H
L
H
AB
X
X
BA0
BA1
BA2
H
H
H
H
X
L
X
H
H
L
H
L
X
H
H
L
X
X
X
H
X
H
H
H
Maintain
PD,SREF,DPD
(NOP)
L
NOP
H
L
L
X
H
X
Exit PD,
SREF,DPD
X
L
L
Enter
Power Down
L
H
X
Maintain
PD,SREF,DPD
(NOP)
X
H
X
H
NOP
X
H
X
Activate
(bank)
Enter Deep
Power Down
CK_t
EDGE
X
H
H
H
X
L
X
X
H
X
X
X
H
X
X
X
H
X
X
X
H
X
X
X
H
L
H
L
X
L
H
X
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 73 -
W97BH6KB / W97BH2KB
Notes:
1. All LPDDR2 commands are defined by states of CS_n, CA0, CA1, CA2, CA3, and CKE at the rising edge of the clock.
2. For LPDDR2 SDRAM, Bank addresses BA0, BA1, BA2 (BA) determine which bank is to be operated upon.
3. AP is significant only to SDRAM.
4. AP “high” during a READ or WRITE command indicates that an auto-precharge will occur to the bank associated with the READ or WRITE
command.
5. “X” means “H or L (but a defined logic level)”.
6. Self refresh exit and Deep Power Down exit are asynchronous.
7. VREF must be between 0 and VDDQ during Self Refresh and Deep Power Down operation.
8. CAxr refers to command/address bit “x” on the rising edge of clock.
9. CAxf refers to command/address bit “x” on the falling edge of clock.
10. CS_n and CKE are sampled at the rising edge of clock.
11. Per Bank Refresh is only allowed in devices with 8 banks.
12. The least-significant column address C0 is not transmitted on the CA bus, and is implied to be zero.
13. AB “high”during Precharge command indicates that all bank Precharge will occur. In this case, Bank Address is do-not-care.
7.5.2
CKE Truth Table
Device Current State*3 CKEn-1*1 CKEn*1 CS_n*2
Active Power Down
Idle Power Down
Resetting Power Down
Deep Power Down
Command n*4
Operation n*4
Device Next State
Maintain Active Power Down
Active Power Down
L
L
X
X
L
H
H
NOP
Exit Active Power Down
Active
L
L
X
X
Maintain Idle Power Down
Idle Power Down
L
H
H
NOP
Exit Idle Power Down
Idle
L
L
X
X
Maintain
Resetting Power Down
Resetting
Power Down
L
H
H
NOP
Exit Resetting Power Down
Idle or Resetting
L
L
X
X
Maintain
Deep Power Down
Deep Power Down
L
H
H
NOP
Exit Deep Power Down
Power On
L
L
X
X
Maintain Self Refresh
Self Refresh
L
H
H
NOP
Exit Self Refresh
Idle
H
L
H
NOP
Enter
Active Power Down
Active Power Down
H
L
H
NOP
Enter
Idle Power Down
Idle Power Dow
H
L
L
Enter
Self Refresh
Enter
Self Refresh
Self Refresh
H
L
L
Deep Power Down
Enter
Deep Power Down
Deep Power Down
Resetting
H
L
H
NOP
Enter
Resetting Power Down
Resetting Power Down
Others states
H
H
Self Refresh
Bank(s) Active
All Banks Idle
Notes
6, 9
6, 9
6, 9, 12
8
7, 10
Refer to the Command Truth Table
Notes:
1. “CKEn” is the logic state of CKE at clock rising edge n; “CKEn-1” was the state of CKE at the previous clock edge.
2. “CS_n” is the logic state of CS_n at the clock rising edge n;
3. “Current state” is the state of the LPDDR2 device immediately prior to clock edge n.
4. “Command n” is the command registered at clock edge N, and “Operation n” is a result of “Command n”.
5. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
6. Power Down exit time (tXP) should elapse before a command other than NOP is issued.
7. Self-Refresh exit time (tXSR) should elapse before a command other than NOP is issued.
8. The Deep Power-Down exit procedure must be followed as discussed in the Deep Power-Down section of the Func tional Description.
9. The clock must toggle at least once during the tXP period.
10. The clock must toggle at least once during the tXSR time.
11. X’ means ‘Don’t care’.
12. Upon exiting Resetting Power Down, the device will return to the Idle state if t INIT5 has expired.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 74 -
W97BH6KB / W97BH2KB
7.5.3
Current State Bank n - Command to Bank n Truth Table
Current
State
Any
Command
NOP
ACTIVATE
Idle
Reading
Writing
Next State
Continue previous operation
Current State
Select and activate row
Notes
Active
Refresh (Per Bank)
Begin to refresh
Refreshing(Per Bank)
6
Refresh (All Bank)
Begin to refresh
Refreshing(All Bank)
7
MR Writing
7
MRW
Load value to Mode Register
MRR
Read value from Mode Register
Idle MR Reading
Reset
Begin Device Auto-Initialization
Resetting
7, 8
Precharging
9, 15
Precharge
Row Active
Operation
Deactivate row in bank or banks
Read
Select column, and start read burst
Reading
Write
Select column, and start write burst
Writing
MRR
Read value from Mode Register
Active MR Reading
Precharge
Deactivate row in bank or banks
Precharging
9
Reading
10, 11
Read
Select column, and start new read burst
Write
Select column, and start write burst
Writing
10, 11, 12
BST
Read burst terminate
Active
13
Write
Select column, and start new write burst
Writing
10, 11
Read
Select column, and start read burst
Reading
10, 11, 14
BST
Write burst terminate
Active
13
7, 9
Power On
Reset
Begin Device Auto-Initialization
Resetting
Resetting
MRR
Read value from Mode Register
Resetting MR Reading
Notes:
1. The table applies when both CKEn-1 and CKEn are HIGH, and after tXSR or tXP has been met if the previous state was Power Down.
2. All states and sequences not shown are illegal or reserved.
3. Current State Definitions:
Idle: The bank or banks have been precharged, and tRP has been met.
Active: A row in the bank has been activated, and tRCD has been met. No data bursts / accesses and no register accessesare in progress.
Reading: A Read burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
Writing: A Write burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
4. The following states must not be interrupted by a command issued to the same bank. NOP commands or allowable commands to the other
bank should be issued on any clock edge occurring during these states. Allowable commands to the other banks are determined by its current
state and 7.5.3 “Current State Bank n - Command to Bank n Truth Table”, and according to 7.5.4 “Current State Bank n - Command to
Bank m Truth Table”.
Precharging: starts with the registration of a Precharge command and ends when t RP is met. Once tRP is met, the bank will be in the idle
state.
Row Activating: starts with registration of an Activate command and ends when tRCD is met. Once tRCD is met, the bank will be in the
‘Active’ state.
Read with AP Enabled: starts with the registration of the Read command with Auto Precharge enabled and ends when t RP has been met.
Once tRP has been met, the bank will be in the idle state.
Write with AP Enabled: starts with registration of a Write command with Auto Precharge enabled and ends when t RP has been met. Once
tRP is met, the bank will be in the idle state.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 75 -
W97BH6KB / W97BH2KB
5. The following states must not be interrupted by any executable command; NOP commands must be applied to each positive clock edge
during these states.
Refreshing (Per Bank): starts with registration of a Refresh (Per Bank) command and ends when tRFCpb is met. Once tRFCpb is met, the
bank will be in an ‘idle’ state.
Refreshing (All Bank): starts with registration of a Refresh (All Bank) command and ends when tRFCab is met. Once tRFCab is met, the
device will be in an ‘all banks idle’ state.
Idle MR Reading: starts with the registration of a MRR command and ends when tMRR has been met. Once tMRR has been met, the bank
will be in the Idle state.
Resetting MR Reading: starts with the registration of a MRR command and ends when t MRR has been met. Once tMRR has been met, the
bank will be in the Resetting state.
Active MR Reading: starts with the registration of a MRR command and ends when t MRR has been met. Once tMRR has been met, the
bank will be in the Active state.
MR Writing: starts with the registration of a MRW command and ends when t MRW has been met. Once tMRW has been met, the bank will
be in the Idle state.
Precharging All: starts with the registration of a Precharge-All command and ends when tRP is met. Once tRP is met, the bank will be in the
idle state.
6. Bank-specific; requires that the bank is idle and no bursts are in progress.
7. Not bank-specific; requires that all banks are idle and no bursts are in progress.
8. Not bank-specific reset command is achieved through Mode Register Write command.
9. This command may or may not be bank specific. If all banks are being precharged, they must be in a valid state for pre- charging.
10. A command other than NOP should not be issued to the same bank while a Read or Write burst with Auto Precharge is enabled.
11. The new Read or Write command could be Auto Precharge enabled or Auto Precharge disabled.
12. A Write command may be applied after the completion of the Read burst; otherwise, a BST must be used to end the Read prior to asserting a
Write command.
13. Not bank-specific. Burst Terminate (BST) command affects the most recent read/write burst started by the most recent Read/Write command,
regardless of bank.
14. A Read command may be applied after the completion of the Write burst; otherwise, a BST must be used to end the Write prior to asserting a
Read command.
15. If a Precharge command is issued to a bank in the Idle state, tRP shall still apply.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 76 -
W97BH6KB / W97BH2KB
7.5.4
Current State Bank n - Command to Bank m Truth Table
Current State of
Bank n
Command
for
Bank m
Any
NOP
Continue previous operation
Idle
Any
Any command allowed to Bank m
-
18
Activate
Select and activate row in Bank m
Active
7
Reading
8
Writing
8
Row Activating,
Active, or
Precharging
Reading
(Autoprecharge
disabled)
Read
Select column, and start read burst from Bank m
Write
Select column, and start write burst to Bank m
Current State of Bank m
Precharging
9
MRR
Read value from Mode Register
Idle MR Reading or
Active MR Readin
10, 11,
13
BST
Read or Write burst terminate an ongoing
Read/Write from/to Bank m
Active
18
Read
Select column, and start read burst from Bank m
Reading
8
Write
Select column, and start write burst to Bank m
Writing
8, 14
Activate
Select and activate row in Bank m
Deactivate row in bank or banks
Active
Precharging
9
Reading
8, 16
8
Read
Select column, and start read burst from Bank m
Write
Select column, and start write burst to Bank m
Writing
Select and activate row in Bank m
Active
Activate
Deactivate row in bank or banks
Precharging
9
Reading
8, 15
8, 14, 15
Read
Select column, and start read burst from Bank m
Write
Select column, and start write burst to Bank m
Writing
Select and activate row in Bank m
Active
Activate
Precharge
Writing with
Autoprecharge
Notes
Deactivate row in bank or banks
Precharge
Reading with
Autoprecharge
Next State for
Bank m
Precharge
Precharge
Writing
(Autoprecharge
disabled)
Operation
Deactivate row in bank or banks
Read
Select column, and start read burst from Bank m
Write
Select column, and start write burst to Bank m
Activate
Select and activate row in Bank m
Precharging
9
Reading
8, 15, 16
Writing
8, 15
Active
Precharge
Deactivate row in bank or banks
Precharging
9
Power On
Reset
Begin Device Auto-Initialization
Resetting
12, 17
Resetting
MRR
Read value from Mode Register
Resetting MR Reading
Notes:
1. The table applies when both CKEn-1 and CKEn are HIGH, and after tXSR or tXP has been met if the previous state was Self Refresh or Power
Down.
2. All states and sequences not shown are illegal or reserved.
3. Current State Definitions:
Idle: the bank has been precharged, and tRP has been met.
Active: a row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress.
Reading: a Read burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
Writing: a Write burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 77 -
W97BH6KB / W97BH2KB
4. Refresh, Self-Refresh, and Mode Register Write commands may only be issued when all bank are idle.
5. A Burst Terminate (BST) command cannot be issued to another bank; it applies to the bank represented by the current state only.
6. The following states must not be interrupted by any executable command; NOP commands must be applied during each clock cycle while in
these states:
Idle MR Reading: starts with the registration of a MRR command and ends when t MRR has been met. Once tMRR has been met, the bank
will be in the Idle state.
Resetting MR Reading: starts with the registration of a MRR command and ends when tMRR has been met. Once tMRR has been met, the
bank will be in the Resetting state.
Active MR Reading: starts with the registration of a MRR command and ends when t MRR has been met. Once tMRR has been met, the
bank will be in the Active state.
MR Writing: starts with the registration of a MRW command and ends when t MRW has been met. Once tMRW has been met, the bank will
be in the Idle state.
7. tRRD must be met between Activate command to Bank n and a subsequent Activate command to Bank m.
8. Reads or Writes listed in the Command column include Reads and Writes with Auto Precharge enabled and Reads and Writes with Auto
Precharge disabled.
9. This command may or may not be bank specific. If all banks are being precharged, they must be in a valid state for pre- charging.
10. MRR is allowed during the Row Activating state (Row Activating starts with registration of an Activate command and ends when tRCD is met).
11. MRR is allowed during the Precharging state. (Precharging starts with registration of a Precharge command and ends when tRP is met.
12. Not bank-specific; requires that all banks are idle and no bursts are in progress.
13. The next state for Bank m depends on the current state of Bank m (Idle, Row Activating, Precharging, or Active). The reader shall note that
the state may be in transition when a MRR is issued. Therefore, if Bank m is in the Row Activating state and Precharging, the next state may
be Active and Precharge dependent upon tRCD and tRP respectively.
14. A Write command may be applied after the completion of the Read burst; otherwise a BST must be issued to end the Read prior to asserting a
Write command.
15. Read with auto precharge enabled or a Write with auto precharge enabled may be followed by any valid command to other banks provided
that the timing restrictions in 7.4.14.2 “Precharge & Auto Precharge Clarification” table are followed.
16. A Read command may be applied after the completion of the Write burst; otherwise, a BST must be issued to end the Write prior to asserting
a Read command.
17. Reset command is achieved through Mode Register Write command.
18. BST is allowed only if a Read or Write burst is ongoing.
7.5.5
Data Mask Truth Table
Name (Functional)
DM
DQs
Note
Write enable
L
Valid
1
Write inhibit
H
X
1
Note:
1. Used to mask write data, provided coincident with the corresponding data.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 78 -
W97BH6KB / W97BH2KB
8. ELECTRICAL CHARACTERISTIC
8.1 Absolute Maximum DC Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and
functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Parameter
Symbol
Min
Max
Units
Notes
VDD1 supply voltage relative to VSS
VDD1
-0.4
+2.3
V
2
VDD2 supply voltage relative to VSS
VDD2
-0.4
+1.6
V
2
VDDCA supply voltage relative to VSSCA
VDDCA
-0.4
+1.6
V
2, 4
VDDQ supply voltage relative to VSSQ
VDDQ
-0.4
+1.6
V
2, 3
VIN, VOUT
-0.4
+1.6
V
TSTG
-55
+125
°C
Voltage on any ball relative to VSS
Storage Temperature
5
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. See “Power Ramp” in section 7.2.1 “Power Ramp and Device Initialization” for relationships between power supplies.
3. VREFDQ ≤ 0.6 x VDDQ; however, VREFDQ may be ≥ VDDQ provided that VREFDQ ≤ 300mV.
4. VREFCA ≤ 0.6 x VDDCA; however, VREFCA may be ≥ VDDCA provided that VREFCA ≤ 300mV.
5. Storage Temperature is the case surface temperature on the center/top side of the LPDDR2 device. For the measurement conditions, please
refer to JESD51-2 standard.
8.2
AC & DC Operating Conditions
Operation or timing that is not specified is illegal, and after such an event, in order to guarantee proper operation, the
LPDDR2 Device must be powered down and then restarted through the specialized initialization sequence before
normal operation can continue.
8.2.1
8.2.1.1
Recommended DC Operating Conditions
Recommended DC Operating Conditions
Symbol
LPDDR2-S4B
DRAM
Unit
1.95
Core Power1
V
1.20
1.30
Core Power2
V
1.14
1.20
1.30
Input Buffer Power
V
1.14
1.20
1.30
I/O Buffer Power
V
Min
Typ
Max
VDD1
1.70
1.80
VDD2
1.14
VDDCA
VDDQ
Note: VDD1 uses significantly less power than VDD2.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 79 -
W97BH6KB / W97BH2KB
8.2.2
Input Leakage Current
Parameter/Condition
Symbol
Min
Max
Unit
Notes
IL
-2
2
µA
2
IVREF
-1
1
µA
1
Input Leakage current
For CA, CKE, CS_n, CK_t, CK_c
Any input 0V ≤ VIN ≤ VDDCA
(All other pins not under test = 0V)
VREF supply leakage current
VREFDQ = VDDQ/2 or VREFCA = VDDCA/2
(All other pins not under test = 0V)
Notes:
1. The minimum limit requirement is for testing purposes. The leakage current on VREFCA and VREFDQ pins should be minimal.
2. Although DM is for input only, the DM leakage shall match the DQ and DQS_t/DQS_c output leakage specification.
8.2.3
Operating Temperature Conditions
Parameter/Condition
Symbol
Standard
TOPER
Extended
Min
Max
Unit
-40
85
°C
85
105
°C
Notes:
1. Operating Temperature is the case surface temperature on the center/top side of the LPDDR2 device. For the measurement conditions, please
refer to JESD51-2 standard.
2. Some applications require operation of LPDDR2 in the maximum temperature conditons in the Extended Temperature Range between 85°C
and 105°C case temperature. For LPDDR2 devices, some derating is neccessary to operate in this range. See the MR4 Device Temperature
(MA[7:0] = 04h) table.
3. Either the device operating temperature or the temperature sensor (See section 7.4.21 “Temperature Sensor”) may be used to set an
appropriate refresh rate, determine the need for AC timing derating and/or monitor the operating temperature. When using the temperature
sensor, the actual device case temperature may be higher than the TOPER rating that applies for the Standard or Extended Temperature
Ranges. For example, TCASE may be above 85ºC when the temperature sensor indicates a temperature of less than 85°C.
4. All parts list in section 3 ordering information table will not guarantee to meet AC specification in the range of extended temperature range.
8.2.4
AC and DC Input Measurement Levels
8.2.4.1 AC and DC Logic Input Levels for Single-Ended Signals
8.2.4.1.1 Single-Ended AC and DC Input Levels for CA and CS_n Inputs
Symbol
LPDDR2-800/1066
Parameter
Min
Max
Unit
Notes
VIHCA(AC)
AC input logic high
Vref + 0.220
Note 2
V
1, 2
VILCA(AC)
AC input logic low
Note 2
Vref - 0.220
V
1, 2
VIHCA(DC)
DC input logic high
Vref + 0.130
VDDCA
V
1
VILCA(DC)
DC input logic low
VSSCA
Vref - 0.130
V
1
VRefCA(DC)
Reference Voltage for CA and CS_n inputs
0.49 * VDDCA
0.51 * VDDCA
V
3, 4
Notes:
1. For CA and CS_n input only pins. Vref = VrefCA(DC).
2. See section 8.2.5.5 “Overshoot and Undershoot Specifications”.
3. The ac peak noise on VRefCA may not allow VRefCA to deviate from VRefCA(DC) by more than ± 1% VDDCA (for reference: approx.
± 12 mV).
4. For reference: approx. VDDCA/2 ± 12 mV.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
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W97BH6KB / W97BH2KB
8.2.4.1.2
Single-Ended AC and DC Input Levels for CKE
Symbol
Parameter
Min
Max
Unit
Note
VIHCKE
CKE Input High Level
0.8 * VDDCA
Note 1
V
1
VILCKE
CKE Input Low Level
Note 1
0.2 * VDDCA
V
1
Note 1: See section 8.2.5.5 “Overshoot and Undershoot Specifications”.
8.2.4.1.3
Single-Ended AC and DC Input Levels for DQ and DM
Symbol
Parameter
LPDDR2-1066/LPDDR2-800
Min
Max
Unit
Notes
VIHDQ(AC)
AC input logic high
Vref + 0.220
Note 2
V
1, 2
VILDQ(AC)
AC input logic low
Note 2
Vref - 0.220
V
1, 2
VIHDQ(DC)
DC input logic high
Vref + 0.130
VDDQ
V
1
VILDQ(DC)
DC input logic low
VSSQ
Vref - 0.130
V
1
VRefDQ(DC)
Reference Voltage for DQ, DM inputs
0.49 * VDDQ
0.51 * VDDQ
V
3, 4
Notes:
1. For DQ input only pins. Vref = VrefDQ(DC).
2. See section 8.2.5.5 “Overshoot and Undershoot Specifications”.
3. The ac peak noise on VRefDQ may not allow VRefDQ to deviate from VRefDQ(DC) by more than ± 1% VDDQ (for reference: approx.
±12 mV).
4. For reference: approx. VDDQ/2 ± 12 mV.
8.2.4.2 Vref Tolerances
The DC tolerance limits and ac-noise limits for the reference voltages VRefCA and VRefDQ are illustrated in below
“VRef(DC) Tolerance and VRef AC-Noise Limits” figure. It shows a valid reference voltage VRef(t) as a function of
time. (VRef stands for VRefCA and VRefDQ likewise). VDD stands for VDDCA for VRefCA and VDDQ for VRefDQ.
VRef(DC) is the linear average of VRef(t) over a very long period of time (e.g. 1 sec) and is specified as a fraction of
the linear average of VDDQ or VDDCA also over a very long period of time (e.g. 1 sec). This average has to meet the
min/max requirements in 8.2.4.1.1 “Single-Ended AC and DC Input Levels for CA and CS_n Inputs” table.
Furthermore VRef(t) may temporarily deviate from VRef(DC) by no more than ± 1% VDD. Vref(t) cannot track noise on
VDDQ or VDDCA if this would send Vref outside these specifications.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
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W97BH6KB / W97BH2KB
8.2.4.2.1
VRef(DC) Tolerance and VRef AC-Noise Limits
voltage
VDD
VRef (t)
VRef ac-noise
VRef (DC)max
VDD/2
VRef (DC)min
VRef (DC)
VSS
time
The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC) and VIL(DC) are dependent on VRef.
“VRef” shall be understood as VRef(DC), as defined in above “VRef(DC) Tolerance and VRef AC-Noise Limits”
figure.
This clarifies that dc-variations of VRef affect the absolute voltage a signal has to reach to achieve a valid high or low
level and therefore the time to which setup and hold is measured. Devices will function correctly with appropriate
timing deratings with VREF outside these specified levels so long as VREF is maintained between 0.44 x VDDQ (or
VDDCA) and 0.56 x VDDQ (or VDDCA) and so long as the controller achieves the required single-ended AC and DC
input levels from instantaneous VRef (see 8.2.4.1.1 “Single-Ended AC and DC Input Levels for CA and CS_n
Inputs” table and 8.2.4.1.3 “Single-Ended AC and DC Input Levels for DQ and DM” table) Therefore, system
timing and voltage budgets need to account for VREF deviations outside of this range.
This also clarifies that the LPDDR2 setup/hold specification and derating values need to include time and voltage
associated with VRef ac-noise. Timing and voltage effects due to ac-noise on VRef up to the specified limit (± 1% of
VDD) are included in LPDDR2 timings and their associated deratings.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
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W97BH6KB / W97BH2KB
8.2.4.3 Input Signal
8.2.4.3.1 LPDDR2-800/1066 Input Signal
VIL and VIH Levels With Ringback
1.550V
VDD + 0.35V
1.200V
VDD
0.820V
VIH(AC)
0.730V
VIH(DC)
0.624V
0.612V
0.600V
0.588V
0.576V
VREF + AC noise
VREF + DC error
VREF – DC error
VREF – AC noise
0.470V
VIL(DC)
0.380V
VIL(AC)
0.000V
VSS
Minimum VIL and VIH Levels
0.820V
0.730V
VIH(AC)
VIH(DC)
0.624V
0.612V
0.600V
0.588V
0.576V
0.470V
0.380V
VIL(DC)
VIL(AC)
-0.350V
VSS – 0.35V
Notes:
1. Numbers reflect nominal values.
2. For CA0-9, CK_t, CK_c, and CS_n, VDD stands for VDDCA. For DQ, DM, DQS_t, and DQS_c, VDD stands for VDDQ.
3. For CA0-9, CK_t, CK_c, and CS_n, VSS stands for VSSCA. For DQ, DM, DQS_t, and DQS_c, VSS stands for VSSQ.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
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W97BH6KB / W97BH2KB
8.2.4.4 AC and DC Logic Input Levels for Differential Signals
8.2.4.4.1 Differential Signal Definition
Differntial
voltage
tDVAC
VIHDIFF(AC)MIN
VIHDIFF(DC)MIN
CK_t-CK_c
DQS_t-DQS_c
0.0
VILDIFF(DC)MAX
VILDIFF(AC)MAX
Half cycle
tDVAC
time
Figure of Definition of Differential AC-Swing and “Time above AC-Level” tDVAC
8.2.4.4.2
Differential swing requirements for clock (CK_t - CK_c) and strobe (DQS_t - DQS_c)
Table of Differential AC and DC Input Levels
Symbol
Parameter
LPDDR2-800/1066
Unit
Notes
Note 3
V
1
Note 3
2 x (VIL(dc) - Vref)
V
1
Min
Max
2 x (VIH(dc) - Vref)
VIHdiff(dc)
Differential input high
VILdiff(dc)
Differential input logic low
VIHdiff(ac)
Differential input high ac
2 x (VIH(ac) - Vref)
Note 3
V
2
VILdiff(ac)
Differential input low ac
Note 3
2 x (VIL(ac) - Vref)
V
2
Notes:
1. Used to define a differential signal slew-rate. For CK_t - CK_c use VIH/VIL(dc) of CA and VREFCA; for DQS_t - DQS_c, use VIH/VIL(dc) of DQs
and VREFDQ; if a reduced dc-high or dc-low level is used for a signal group, then the reduced level applies also here.
2. For CK_t - CK_c use VIH/VIL(ac) of CA and VREFCA; for DQS_t - DQS_c, use VIH/VIL(ac) of DQs and VREFDQ; if a reduced ac-high or ac-low
level is used for a signal group, then the reduced level applies also here.
3. These values are not defined, however the single-ended signals CK_t, CK_c, DQS_t, and DQS_c need to be within the respective limits
(VIH(dc) max, VIL(dc)min) for single-ended signals as well as the limitations for overshoot and undershoot. Refer to section 8.2.5.5 “Overshoot
and Undershoot Specifications”.
4. For CK_t and CK_c, Vref = VrefCA(DC). For DQS_t and DQS_c, Vref = VrefDQ(DC).
Publication Release Date: Apr. 28, 2016
Revision: A01-001
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Table of Allowed Time before Ringback (tDVAC) for CK_t - CK_c and DQS_t - DQS_c
Slew Rate [V/nS]
tDVAC [pS]
@ |VIHdiff(ac) or VILdiff(ac)| = 440mV
> 4.0
175
4.0
170
3.0
167
2.0
163
1.8
162
1.6
161
1.4
159
1.2
155
1.0
150
< 1.0
150
8.2.4.5 Single-Ended Requirements for Differential Signals
Each individual component of a differential signal (CK_t, DQS_t, CK_c, or DQS_c) has also to comply with certain
requirements for single-ended signals.
CK_t and CK_c shall meet VSEH(ac)min / VSEL(ac)max in every half-cycle.
DQS_t, DQS_c shall meet VSEH(ac)min / VSEL(ac)max in every half-cycle preceeding and following a valid transition.
Note that the applicable ac-levels for CA and DQ’s are different per speed-bin.
VDDCA or VDDQ
VSEH(ac)
VSEH(ac)min
VDDCA/2 or VDDQ/2
CK_t,CK_
DQS_t, or DQS_c
VSEL(ac)max
VSEL(ac)
VSSCA or VSSQ
time
Figure of Single-Ended Requirement for Differential Signals
Publication Release Date: Apr. 28, 2016
Revision: A01-001
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W97BH6KB / W97BH2KB
Note that while CA and DQ signal requirements are with respect to Vref, the single-ended components of differential
signals have a requirement with respect to VDDQ/2 for DQS_t, DQS_c and VDDCA/2 for CK_t, CK_c; this is nominally
the same. The transition of single-ended signals through the ac-levels is used to measure setup time. For singleended components of differential signals the requirement to reach VSEL(ac)max, VSEH(ac)min has no bearing on
timing, but adds a restriction on the common mode characteristics of these signals.
The signal ended requirements for CK_t, CK_c, DQS_t and DQS_c are found in 8.2.4.1.1 “Single-Ended AC and
DC Input Levels for CA and CS_n Inputs” table and 8.2.4.1.3 “Single-Ended AC and DC Input Levels for DQ
and DM” table, respectively.
Table of Single-Ended Levels for CK_t, DQS_t, CK_c, DQS_c
Symbol
VSEH(AC)
VSEL(AC)
LPDDR2-800/1066
Parameter
Unit
Notes
Note 3
V
1, 2
(VDDCA/2) + 0.220
Note 3
V
1, 2
Single-ended low-level for strobes
Note 3
(VDDQ/2) - 0.220
V
1, 2
Single-ended low-level for CK_t, CK_c
Note 3
(VDDCA/2) - 0.220
V
1, 2
Min
Max
Single-ended high-level for strobes
(VDDQ/2) + 0.220
Single-ended high-level for CK_t, CK_c
Notes:
1. For CK_t, CK_c use VSEH/VSEL(ac) of CA; for strobes (DQS0_t, DQS0_c, DQS1_t, DQS1_c, DQS2_t, DQS2_c, DQS3_t, DQS3_c) use
VIH/VIL(ac) of DQs.
2. VIH(ac)/VIL(ac) for DQs is based on VREFDQ; VSEH(ac)/VSEL(ac) for CA is based on VREFCA; if a reduced ac-high or ac-low level is used for
a signal group, then the reduced level applies also here.
3. These values are not defined, however the single-ended signals CK_t, CK_c, DQS0_t, DQS0_c, DQS1_t, DQS1_c, DQS2_t, DQS2_c,
DQS3_t, DQS3_c need to be within the respective limits (VIH(dc) max, VIL(dc)min) for single-ended signals as well as the limitations for
overshoot and undershoot. Refer to section 8.2.5.5 “Overshoot and Undershoot Specifications”.
8.2.4.6 Differential Input Cross Point Voltage
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each
cross point voltage of differential input signals (CK_t, CK_c and DQS_t, DQS_c) must meet the requirements of
above Single-ended levels for CK_t, DQS_t, CK_c, DQS_c table. The differential input cross point voltage VIX is
measured from the actual cross point of true and complement signals to the midlevel between of VDD and VSS.
VDDCA or VDDQ
CK_c, DQS_c
VIX
VDDCA/2 or VDDQ/2
VIX
VIX
CK_t, DQS_t
VSSCA or VSSQ
Figure of Vix Definition
Publication Release Date: Apr. 28, 2016
Revision: A01-001
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Table of Cross Point Voltage for Differential Input Signals (CK, DQS)
Symbol
LPDDR2-800/1066
Parameter
Min
Max
Unit
Notes
VIXCA
Differential Input Cross Point Voltage relative to
VDDCA/2 for CK_t, CK_c
- 120
120
mV
1, 2
VIXDQ
Differential Input Cross Point Voltage relative to
VDDQ/2 for DQS_t, DQS_c
- 120
120
mV
1, 2
Notes:
1. The typical value of VIX(AC) is expected to be about 0.5 × VDD of the transmitting device, and VIX(AC) is expected to track variations in VDD.
VIX(AC) indicates the voltage at which differential input signals must cross.
2. For CK_t and CK_c, Vref = VrefCA(DC). For DQS_t and DQS_c, Vref = VrefDQ(DC).
8.2.4.7 Slew Rate Definitions for Single-Ended Input Signals
See section 8.7.2 “CA and CS_n Setup, Hold and Derating” for single-ended slew rate definitions for address and
command signals.
See section 8.7.3 “Data Setup, Hold and Slew Rate Derating” for single-ended slew rate definitions for data
signals.
8.2.4.8 Slew Rate Definitions for Differential Input Signals
Input slew rate for differential signals (CK_t, CK_c and DQS_t, DQS_c) are defined and measured as shown in
below table and figure.
Table of Differential Input Slew Rate Definition
Measured
Description
Defined by
from
to
Differential input slew rate for rising edge
(CK_t - CK_c and DQS_t - DQS_c).
VILdiffmax
VIHdiffmin
[VIHdiffmin - VILdiffmax] / DeltaTRdiff
Differential input slew rate for falling edge
(CK_t - CK_c and DQS_t - DQS_c).
VIHdiffmin
VILdiffmax
[VIHdiffmin - VILdiffmax] / DeltaTFdiff
Differential Input Voltage (i.e.DQS_t-DQS_c;CK_t-CK_c)
Note: The differential signal (i.e. CK_t - CK_c and DQS_t - DQS_c) must be linear between these thresholds.
Delta TRdiff
VIHdiffmin
0
VILdiffmax
Delta TFdiff
Figure of Differential Input Slew Rate Definition for DQS_t, DQS_c and CK_t, CK_c
Publication Release Date: Apr. 28, 2016
Revision: A01-001
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W97BH6KB / W97BH2KB
8.2.5
AC and DC Output Measurement Levels
8.2.5.1
Single Ended AC and DC Output Levels
Table of Single-Ended AC and DC Output Levels
Symbol
Parameter
LPDDR2-800/1066
Unit
Notes
VOH(DC)
DC output high measurement level (for IV curve linearity)
0.9 x VDDQ
V
1
VOL(DC)
DC output low measurement level (for IV curve linearity)
0.1 x VDDQ
V
2
VOH(AC)
AC output high measurement level (for output slew rate)
VREFDQ + 0.12
V
VOL(AC)
AC output low measurement level (for output slew rate)
VREFDQ - 0.12
V
IOZ
Output Leakage current (DQ, DM, DQS_t, DQS_c)
(DQ, DQS_t, DQS_c are disabled;0V ≤ Vout ≤ VDDQ)
MMPUPD
Delta RON between pull-up and pull-down for DQ/DM
Min
-5
Max
+5
Miin
-15
Max
+15
µA
%
Notes:
1. IOH = -0.1mA.
2. IOL = +0.1mA.
8.2.5.2
Differential AC and DC Output Levels
Table of Differential AC and DC Output Levels of (DQS_t, DQS_c)
Symbol
Parameter
LPDDR2-800/1066
Unit
VOHdiff(AC)
AC differential output high measurement level (for output SR)
+ 0.20 x VDDQ
V
VOLdiff(AC)
AC differential output low measurement level (for output SR)
- 0.20 x VDDQ
V
Notes
Notes:
1. IOH = -0.1mA.
2. IOL = +0.1mA.
8.2.5.3 Single Ended Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined and
measured between VOL(AC) and VOH(AC) for single ended signals as shown in below table and figure.
Table of Single-Ended Output Slew Rate Definition
Description
Measured
Defined by
from
to
Single-ended output slew rate for rising edge
VOL(AC)
VOH(AC)
[VOH(AC) - VOL(AC)] / DeltaTRse
Single-ended output slew rate for falling edge
VOH(AC)
VOL(AC)
[VOH(AC) - VOL(AC)] / DeltaTFse
Note: Output slew rate is verified by design and characterization, and may not be subject to production test.
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Single Ended Output Vollage (i.e.DQ)
Delta TRse
VOH(AC)
VREF
VOL(AC)
Delta TFse
Figure of Single Ended Output Slew Rate Definiton
Table of Output Slew Rate (Single-Ended)
Symbol
LPDDR2-800/1066
Parameter
Min
Max
Units
SRQse
Single-ended Output Slew Rate (RON = 40Ω ± 30%)
1.5
3.5
V/nS
SRQse
Single-ended Output Slew Rate (RON = 60Ω ± 30%)
1.0
2.5
V/nS
Output slew-rate matching Ratio (Pull-up to Pull-down)
0.7
1.4
Description:
SR: Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
se: Single-ended Signals
Notes:
1. Measured with output reference load.
2. The ratio of pull-up to pull-down slew rate is specified for the same temperature and voltage, over the entire temperature and voltage range.
For a given output, it represents the maximum difference between pull-up and pulldown drivers due to process variation.
3. The output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC).
4. Slew rates are measured under normal SSO conditions, with 1/2 of DQ signals per data byte driving logic high and 1/2 of DQ signals per data
byte driving logic low.
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8.2.5.4 Differential Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined and
measured between VOLdiff(AC) and VOHdiff(AC) for differential signals as shown in below table and figure.
Table of Differential Output Slew Rate Definition
Measured
Description
Defined by
from
to
Differential output slew rate for rising edge
VOLdiff(AC)
VOHdiff(AC)
[VOHdiff(AC) - VOLdiff(AC)] / DeltaTRdiff
Differential output slew rate for falling edge
VOHdiff(AC)
VOLdiff(AC)
[VOHdiff(AC) - VOLdiff(AC)] / DeltaTFdiff
Note: Output slew rate is verified by design and characterization, and may not be subject to production test.
Differential Output VoltAge (i.e. DQS_t – DQS_c)
Delta TRdiff
VOHdiff(AC)
0
VOLdiff(AC)
Delta TFdiff
Figure of Differential Output Slew Rate Definition
Table of Differential Output Slew Rate
Symbol
LPDDR2-800/1066
Parameter
Min
Max
Units
SRQdiff
Differential Output Slew Rate (RON = 40Ω ± 30%)
3.0
7.0
V/nS
SRQdiff
Differential Output Slew Rate (RON = 60Ω ± 30%)
2.0
5.0
V/nS
Description:
SR: Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
diff: differential Signals
Notes:
1. Measured with output reference load.
2. The output slew rate for falling and rising edges is defined and measured between VOLdiff(AC) and VOHdiff(AC).
3. Slew rates are measured under normal SSO conditions, with 1/2 of DQ signals per data byte driving logic-high and 1/2 of DQ signals per data
byte driving logic-low.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
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W97BH6KB / W97BH2KB
8.2.5.5
Overshoot and Undershoot Specifications
Table of AC Overshoot/Undershoot Specification
Parameter
1066
933
800
LPDDR2
667
533
400
333
Unit
Maximum peak amplitude
allowed for overshoot area.
(See figure below)
Max
0.35
V
Maximum peak amplitude
allowed for undershoot area.
(See figure below)
Max
0.35
V
Maximum area above VDD.
(See figure below)
Maximum area below VSS.
(See figure below)
Max
0.15
0.17
0.20
0.24
0.30
0.40
0.48
V-nS
Max
0.15
0.17
0.20
0.24
0.30
0.40
0.48
V-nS
(CA0-9, CS_n, CKE, CK_t, CK_c, DQ, DQS_t, DQS_c, DM)
Notes:
1. For CA0-9, CK_t, CK_c, CS_n, and CKE, VDD stands for VDDCA. For DQ, DM, DQS_t, and DQS_c, VDD stands for VDDQ.
2. For CA0-9, CK_t, CK_c, CS_n, and CKE, VSS stands for VSSCA. For DQ, DM, DQS_t, and DQS_c, VSS stands for VSSQ.
3. Maximum peak amplitude values are referenced from actual VDD and VSS values.
4. Maximum area values are referenced from maximum operating VDD and VSS values.
Maximum Amplitude
Overshoot Area
Volts
(V)
VDD
VSS
Undershoot Area
Maximum Amplitude
Time (ns)
Figure of Overshoot and Undershoot Definition
Notes:
1. For CA0-9, CK_t, CK_c, CS_n, and CKE, VDD stands for VDDCA. For DQ, DM, DQS_t, and DQS_c, VDD stands for VDDQ.
2. For CA0-9, CK_t, CK_c, CS_n, and CKE, VSS stands for VSSCA. For DQ, DM, DQS_t, and DQS_c, VSS stands for VSSQ.
3. Maximum peak amplitude values are referenced from actual V DD and VSS values.
4. Maximum area values are referenced from maximum operating VDD and VSS values.
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W97BH6KB / W97BH2KB
8.2.6
Output buffer Characteristics
8.2.6.1 HSUL_12 Driver Output Timing Reference Load
These ‘Timing Reference Loads’ are not intended as a precise representation of any particular system environment
or a depiction of the actual load presented by a production tester. System designers should use IBIS or other
simulation tools to correlate the timing reference load to a system environment. Manufacturers correlate to their
production test conditions, generally one or more coaxial transmission lines terminated at the tester electronics.
VREF
0.5 x VDDQ
LPDDR2
SDRAM
RTT = 50 Ω
Output
VTT = 0.5 x VDDQ
Cload = 5pF
Figure of HSUL_12 Driver Output Reference Load for Timing and Slew Rate
Note:
All output timing parameter values (like tDQSCK, tDQSQ, tQHS, tHZ, tRPRE etc.) are reported with respect to this
reference load. This reference load is also used to report slew rate.
8.2.6.2 RONPU and RONPD Resistor Definition
RONPU =
(VDDQ – Vout )
ABS ( Iout )
Note: This is under the condition that RONPD is turned off
RONPD =
Vout
ABS (Iout )
Note: This is under the condition that RONPU is turned off
Chip in Drive Mode
Output Driver
VDDQ
IPU
To
Other
Circuityrt
Like
RCV,
...
RONPU
IOut
RONPD
DQ
VOut
IPD
VSSQ
Figure of Output Driver Definition of Voltages and Currents
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 92 -
W97BH6KB / W97BH2KB
8.2.6.3 RONPU and RONPD Characteristics with ZQ Calibration
Output driver impedance RON is defined by the value of the external reference resistor RZQ. Nominal RZQ is 240Ω.
Table of Output Driver DC Electrical Characteristics with ZQ Calibration
RONNOM
34.3Ω
40.0Ω
48.0Ω
60.0Ω
80.0Ω
120.0Ω
Mismatch between pull-up and pull-down
Resistor
Vout
Min
Nom
Max
Unit
Note
RON34PD
0.5 x VDDQ
0.85
1.00
1.15
RZQ/7
1, 2, 3, 4
RON34PU
0.5 x VDDQ
0.85
1.00
1.15
RZQ/7
1, 2, 3, 4
RON40PD
0.5 x VDDQ
0.85
1.00
1.15
RZQ/6
1, 2, 3, 4
RON40PU
0.5 x VDDQ
0.85
1.00
1.15
RZQ/6
1, 2, 3, 4
RON48PD
0.5 x VDDQ
0.85
1.00
1.15
RZQ/5
1, 2, 3, 4
RON48PU
0.5 x VDDQ
0.85
1.00
1.15
RZQ/5
1, 2, 3, 4
RON60PD
0.5 x VDDQ
0.85
1.00
1.15
RZQ/4
1, 2, 3, 4
RON60PU
0.5 x VDDQ
0.85
1.00
1.15
RZQ/4
1, 2, 3, 4
RON80PD
0.5 x VDDQ
0.85
1.00
1.15
RZQ/3
1, 2, 3, 4
RON80PU
0.5 x VDDQ
0.85
1.00
1.15
RZQ/3
1, 2, 3, 4
RON120PD
0.5 x VDDQ
0.85
1.00
1.15
RZQ/2
1, 2, 3, 4
RON120PU
0.5 x VDDQ
0.85
1.00
1.15
RZQ/2
1, 2, 3, 4
+15.00
%
1, 2, 3, 4, 5
MMPUPD
-15.00
Notes:
1. Across entire operating temperature range, after calibration.
2. RZQ = 240Ω.
3. The tolerance limits are specified after calibration with fixed voltage and temperature. For behavior of the tolerance limits if temperature or
voltage changes after calibration, see following section on voltage and temperature sensitivity.
4. Pull-down and pull-up output driver impedances are recommended to be calibrated at 0.5 x V DDQ.
5. Mesaurement definition for mismatch between pull-up and pull-down: MMPUPD: Measure RONPU and RONPD, both at 0.5 x VDDQ:
MMPUPD = RONPU – RONPD x 100
RONNOM
For example, with MMPUPD(max) = 15% and RONPD = 0.85, RONPU must be less than 1.0.
8.2.6.4 Output Driver Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to the tables shown below.
Table of Output Driver Sensitivity Definition
Resistor
RONPD
RONPU
Vout
Min
Max
Unit
Notes
0.5 x VDDQ
85 – (dR ONdT ×|ΔT| ) – (dRON d V × |ΔV| )
115 + (dRONdT ×| ΔT| )+(dRONdV × |ΔV|)
%
1, 2
Notes:
1. ΔT = T–T (@calibration), ΔV=V–V(@ calibration).
2. dRONdT and dRONdV are not subject to production test but are verified by design and characterization.
Table of Output Driver Temperature and Voltage Sensitivity
Symbol
Parameter
Min
Max
Unit
dRONdT
RON Temperature Sensitivity
0.00
0.75
% / °C
dRONdV
RON Voltage Sensitivity
0.00
0.20
% / mV
Note
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 93 -
W97BH6KB / W97BH2KB
8.2.6.5 RONPU and RONPD Characteristics without ZQ Calibration
Output driver impedance RON is defined by design and characterization as default setting.
Table of Output Driver DC Electrical Characteristics without ZQ Calibration
RONNOM
34.3Ω
40.0Ω
48.0Ω
60.0Ω
80.0Ω
120.0Ω
Resistor
Vout
Min
Nom
Max
Unit
Note
RON34PD
0.5 x VDDQ
24
34.3
44.6
Ω
1
RON34PU
0.5 x VDDQ
24
34.3
44.6
Ω
1
RON40PD
0.5 x VDDQ
28
40
52
Ω
1
RON40PU
0.5 x VDDQ
28
40
52
Ω
1
RON48PD
0.5 x VDDQ
33.6
48
62.4
Ω
1
RON48PU
0.5 x VDDQ
33.6
48
62.4
Ω
1
RON60PD
0.5 x VDDQ
42
60
78
Ω
1
RON60PU
0.5 x VDDQ
42
60
78
Ω
1
RON80PD
0.5 x VDDQ
56
80
104
Ω
1
RON80PU
0.5 x VDDQ
56
80
104
Ω
1
RON120PD
0.5 x VDDQ
84
120
156
Ω
1
RON120PU
0.5 x VDDQ
84
120
156
Ω
1
Note: Across entire operating temperature range, without calibration.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 94 -
W97BH6KB / W97BH2KB
8.2.6.6
RZQ I-V Curve
Table of RZQ I-V Curve
RON = 240Ω (RZQ)
Voltage[V]
Pull-Down
Pull-Up
Current [mA] / RON [Ohms]
Current [mA] / RON [Ohms]
default value after
ZQReset
default value after
ZQReset
With Calibration
With Calibration
Min
Max
Min
Max
Min
Max
Min
Max
[mA]
[mA]
[mA]
[mA]
[mA]
[mA]
[mA]
[mA]
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.05
0.19
0.32
0.21
0.26
-0.19
-0.32
-0.21
-0.26
0.10
0.38
0.64
0.40
0.53
-0.38
-0.64
-0.40
-0.53
0.15
0.56
0.94
0.60
0.78
-0.56
-0.94
-0.60
-0.78
0.20
0.74
1.26
0.79
1.04
-0.74
-1.26
-0.79
-1.04
0.25
0.92
1.57
0.98
1.29
-0.92
-1.57
-0.98
-1.29
0.30
1.08
1.86
1.17
1.53
-1.08
-1.86
-1.17
-1.53
0.35
1.25
2.17
1.35
1.79
-1.25
-2.17
-1.35
-1.79
0.40
1.40
2.46
1.52
2.03
-1.40
-2.46
-1.52
-2.03
0.45
1.54
2.74
1.69
2.26
-1.54
-2.74
-1.69
-2.26
0.50
1.68
3.02
1.86
2.49
-1.68
-3.02
-1.86
-2.49
0.55
1.81
3.30
2.02
2.72
-1.81
-3.30
-2.02
-2.72
0.60
1.92
3.57
2.17
2.94
-1.92
-3.57
-2.17
-2.94
0.65
2.02
3.83
2.32
3.15
-2.02
-3.83
-2.32
-3.15
0.70
2.11
4.08
2.46
3.36
-2.11
-4.08
-2.46
-3.36
0.75
2.19
4.31
2.58
3.55
-2.19
-4.31
-2.58
-3.55
0.80
2.25
4.54
2.70
3.74
-2.25
-4.54
-2.70
-3.74
0.85
2.30
4.74
2.81
3.91
-2.30
-4.74
-2.81
-3.91
0.90
2.34
4.92
2.89
4.05
-2.34
-4.92
-2.89
-4.05
0.95
2.37
5.08
2.97
4.23
-2.37
-5.08
-2.97
-4.23
1.00
2.41
5.20
3.04
4.33
-2.41
-5.20
-3.04
-4.33
1.05
2.43
5.31
3.09
4.44
-2.43
-5.31
-3.09
-4.44
1.10
2.46
5.41
3.14
4.52
-2.46
-5.41
-3.14
-4.52
1.15
2.48
5.48
3.19
4.59
-2.48
-5.48
-3.19
-4.59
1.20
2.50
5.55
3.23
4.65
-2.50
-5.55
-3.23
-4.65
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 95 -
W97BH6KB / W97BH2KB
6
PD Max
PD Min
4
PU Min
PU Max
mA
2
0
-2
-4
-6
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Voltage
Figure of RON = 240 Ohms IV Curve after ZQReset
6
PD Max
PD Min
4
PU Min
PU Max
mA
2
0
-2
-4
-6
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Voltage
0.8
0.9
1.0
1.1
1.2
Figure of RON = 240 Ohms IV Curve after Calibration
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 96 -
W97BH6KB / W97BH2KB
8.2.6.7
Input/Output Capacitance
Table of Input/Output Capacitance
Parameter
Symbol
Min
Max
Units
Note
CPKGCK
1
3
pF
1, 2
CDPKGCK
0
0.2
pF
1, 2, 3
CPKGI
1
3
pF
1, 2, 4
Package Input capacitance delta, all other input-only pins
CDPKGI
-0.5
0.5
pF
1, 2, 5
Package Input/output capacitance, DQ, DM, DQS_t, DQS_c
CPKGIO
1.25
3.5
pF
1, 2, 7
CDPKGDQS
0
0.25
pF
1, 2, 6
Package Input/output capacitance delta, DQ, DM
CDPKGIO
-0.5
0.5
pF
1, 2, 7
Package Input/output capacitance, ZQ Pin
CPKGZQ
0
3.5
pF
1, 2
Package Input capacitance, CK_t and CK_c
Package Input capacitance delta, CK_t and CK_c
Package Input capacitance, all other input-only pins
Package Input/output capacitance delta, DQS_t, DQS_c
(TOPER; VDDQ = 1.14- 1.3V; VDDCA = 1.14-1.3V; VDD1 = 1.7-1.95V, LPDDR2-S4 VDD2 = 1.14-1.3V).
Notes:
1. This parameter is not subject to production test. It is verified by design and characterization. The capacitance is measured according to
JEP147 (Procedure for measuring input capacitance using a vector network analyzer (VNA) with VDD1, VDD2, VDDQ, VSS, VSSCA, VSSQ
applied and all other pins floating.
2. This parameter applies to package only (does not include die capacitance). This value is vendor specific.
3. Absolute value of CPKGCK_t - CPKGCK_c.
4. CPKGI applies to CS_n, CKE, CA0-CA9
5. CDPKGI = CPKGI - 0.5 * (CPKGDQS_t + CPKGDQS_c).
6. Absolute value of CPKGDQS_t and CPKGDQS_c.
7. CDPKGIO = CPKGIO - 0.5 * (CPKGDQS_t + CPKGDQS_c) in byte lane.
8. Maximum external load capacitance on ZQ pin, including packaging, board, pin, resistor, and other LPDDR2 devices: 5 pF.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 97 -
W97BH6KB / W97BH2KB
8.3
IDD Specification Parameters and Test Conditions
8.3.1
IDD Measurement Conditions
The following definitions are used within the IDD measurement tables:
LOW: VIN ≤ VIL(DC) MAX
HIGH: VIN ≥ VIH(DC) MIN
STABLE: Inputs are stable at a HIGH or LOW level
SWITCHING: See tables below.
8.3.1.1
Definition of Switching for CA Input Signals
Switching for CA
CK_t
(RISING) /
Ck_C
(FALLING)
CK_t
(FALLING) /
Ck_C
(RISING)
CK_t
(RISING) /
Ck_C
(FALLING)
CK_t
(FALLING) /
Ck_C
(RISING)
CK_t
(RISING) /
Ck_C
(FALLING)
CK_t
(FALLING) /
Ck_C
(RISING)
CK_t
(RISING) /
Ck_C
(FALLING)
CK_t
(FALLING) /
Ck_C
(RISING)
Cycle
N
N+1
N+2
N+3
CS_n
HIGH
HIGH
HIGH
HIGH
CA0
HIGH
LOW
LOW
LOW
LOW
HIGH
HIGH
HIGH
CA1
HIGH
HIGH
HIGH
LOW
LOW
LOW
LOW
HIGH
CA2
HIGH
LOW
LOW
LOW
LOW
HIGH
HIGH
HIGH
CA3
HIGH
HIGH
HIGH
LOW
LOW
LOW
LOW
HIGH
CA4
HIGH
LOW
LOW
LOW
LOW
HIGH
HIGH
HIGH
CA5
HIGH
HIGH
HIGH
LOW
LOW
LOW
LOW
HIGH
CA6
HIGH
LOW
LOW
LOW
LOW
HIGH
HIGH
HIGH
CA7
HIGH
HIGH
HIGH
LOW
LOW
LOW
LOW
HIGH
CA8
HIGH
LOW
LOW
LOW
LOW
HIGH
HIGH
HIGH
CA9
HIGH
HIGH
HIGH
LOW
LOW
LOW
LOW
HIGH
Notes:
1. CS_n must always be driven HIGH.
2. 50% of CA bus is changing between HIGH and LOW once per clock for the CA bus.
3. The above pattern (N, N+1, N+2, N+3...) is used continuously during IDD measurement for IDD values that require SWITCHING on the CA bus.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 98 -
W97BH6KB / W97BH2KB
8.3.1.2
Definition of Switching for IDD4R
Clock
CKE
CS_n
Clock Cycle Number
Command
CA0-CA2
CA3-CA9
All DQ
Rising
HIGH
LOW
N
Read_Rising
HLH
LHLHLHL
L
Falling
HIGH
LOW
N
Read_Falling
LLL
LLLLLLL
L
Rising
HIGH
HIGH
N+1
NOP
LLL
LLLLLLL
H
Falling
HIGH
HIGH
N+1
NOP
HLH
HLHLLHL
L
Rising
HIGH
LOW
N+2
Read_Rising
HLH
HLHLLHL
H
Falling
HIGH
LOW
N+2
Read_Falling
LLL
HHHHHHH
H
Rising
HIGH
HIGH
N+3
NOP
LLL
HHHHHHH
H
Falling
HIGH
HIGH
N+3
NOP
HLH
LHLHLHL
L
Notes:
1. Data strobe (DQS) is changing between HIGH and LOW every clock cycle.
2. The above pattern (N, N+1...) is used continuously during IDD measurement for IDD4R.
8.3.1.3
Definition of Switching for IDD4W
Clock
CKE
CS_n
Clock Cycle Number
Command
CA0-CA2
CA3-CA9
All DQ
Rising
HIGH
LOW
N
Write_Rising
HLL
LHLHLHL
L
Falling
HIGH
LOW
N
Write_Falling
LLL
LLLLLLL
L
Rising
HIGH
HIGH
N+1
NOP
LLL
LLLLLLL
H
Falling
HIGH
HIGH
N+1
NOP
HLH
HLHLLHL
L
Rising
HIGH
LOW
N+2
Write_Rising
HLL
HLHLLHL
H
Falling
HIGH
LOW
N+2
Write_Falling
LLL
HHHHHHH
H
Rising
HIGH
HIGH
N+3
NOP
LLL
HHHHHHH
H
Falling
HIGH
HIGH
N+3
NOP
HLH
LHLHLHL
L
Notes:
1. Data strobe (DQS) is changing between HIGH and LOW every clock cycle.
2. Data masking (DM) must always be driven LOW.
3. The above pattern (N, N+1...) is used continuously during IDD measurement for IDD4W .
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 99 -
W97BH6KB / W97BH2KB
8.3.2
8.3.2.1
IDD Specifications
LPDDR2 IDD Specification Parameters and Operating Conditions, -40°C~85°C (x16, x32)
Parameter/Condition
Symbol
533 MHz
Unit
Notes
Operating one bank active-precharge current:
tCK = tCK(avg)min; tRC = tRCmin;
CKE is HIGH;
CS_n is HIGH between valid commands;
CA bus inputs are SWITCHING;
Data bus inputs are STABLE
Idle power-down standby current:
tCK = tCK(avg)min;
CKE is LOW; CS_n is HIGH;
All banks/RBs idle;
CA bus inputs are SWITCHING;
Data bus inputs are STABLE
Idle power-down standby current with clock stop:
CK_t =LOW, CK_c =HIGH;
CKE is LOW; CS_n is HIGH;
All banks/RBs idle;
CA bus inputs are STABLE;
Data bus inputs are STABLE
Idle non power-down standby current:
tCK = tCK(avg)min;
CKE is HIGH; CS_n is HIGH;
All banks/RBs idle;
CA bus inputs are SWITCHING;
Data bus inputs are STABLE
Idle non power-down standby current with clock stop:
CK_t =LOW, CK_c =HIGH;
CKE is HIGH; CS_n is HIGH;
All banks/RBs idle;
CA bus inputs are STABLE;
Data bus inputs are STABLE
Active power-down standby current:
tCK = tCK(avg)min;
CKE is LOW; CS_n is HIGH;
One bank/RB active;
CA bus inputs are SWITCHING;
Data bus inputs are STABLE
Active power-down standby current with clock stop:
CK_t=LOW, CK_c=HIGH;
CKE is LOW; CS_n is HIGH;
One bank/RB active;
CA bus inputs are STABLE;
Data bus inputs are STABLE
Active non power-down standby current:
tCK = tCK(avg)min;
CKE is HIGH; CS_n is HIGH;
One bank/RB active;
CA bus inputs are SWITCHING;
Data bus inputs are STABLE
Active non power-down standby current with clock stop:
CK_t=LOW, CK_c=HIGH;
CKE is HIGH; CS_n is HIGH;
One bank/RB active;
CA bus inputs are STABLE;
Data bus inputs are STABLE
IDD01
IDD02
Power Supply 400 MHz
VDD1
VDD2
20
25
20
30
mA
mA
1
1
IDD0IN
VDDCA
VDDQ
6
6
mA
1, 2
IDD2P1
IDD2P2
VDD1
VDD2
1.2
2.5
1.2
2.5
mA
mA
1
1
IDD2PIN
VDDCA
VDDQ
60
60
µA
1, 2
IDD2PS1
IDD2PS2
VDD1
VDD2
1.2
2.5
1.2
2.5
mA
mA
1
1
IDD2PSIN
VDDCA
VDDQ
60
60
µA
1, 2
IDD2N1
IDD2N2
VDD1
VDD2
2.5
12
2.5
16
mA
mA
1
1
IDD2NIN
VDDCA
VDDQ
6
6
mA
1, 2
IDD2NS1
IDD2NS2
VDD1
VDD2
2.5
12
2.5
16
mA
mA
1
1
IDD2NSIN
VDDCA
VDDQ
6
6
mA
1, 2
IDD3P1
IDD3P2
VDD1
VDD2
3.5
4
3.5
4
mA
mA
1
1
IDD3PIN
VDDCA
VDDQ
60
60
µA
1, 2
IDD3PS1
IDD3PS2
VDD1
VDD2
3.5
4
3.5
4
mA
mA
1
1
IDD3PSIN
VDDCA
VDDQ
60
60
µA
1, 2
IDD3N1
IDD3N2
VDD1
VDD2
3.5
16
3.5
20
mA
mA
1
1
IDD3NIN
VDDCA
VDDQ
6
6
mA
1, 2
IDD3NS1
IDD3NS2
VDD1
VDD2
3.5
16
3.5
20
mA
mA
1
1
IDD3NSIN
VDDCA
VDDQ
6
6
mA
1, 2
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 100 -
W97BH6KB / W97BH2KB
Parameter/Condition
Operating burst read current:
tCK = tCK(avg)min;
CS_n is HIGH between valid commands;
One bank/RB active;
BL = 4; RL = RLmin;
CA bus inputs are SWITCHING;
50% data change each burst transfer
Operating burst write current:
tCK = tCK(avg)min;
CS_n is HIGH between valid commands;
One bank/RB active;
BL = 4; WL = WLmin;
CA bus inputs are SWITCHING;
50% data change each burst transfer
All Bank Refresh Burst current:
tCK = tCK(avg)min;
CKE is HIGH between valid commands;
tRC = tRFCabmin;
Burst refresh;
CA bus inputs are SWITCHING;
Data bus inputs are STABLE;
All Bank Refresh Average current:
tCK = tCK(avg)min;
CKE is HIGH between valid commands;
tRC = tREFI;
CA bus inputs are SWITCHING;
Data bus inputs are STABLE;
Per Bank Refresh Average current:
tCK = tCK(avg)min;
CKE is HIGH between valid commands;
tRC = tREFI/8;
CA bus inputs are SWITCHING;
Data bus inputs are STABLE;
Deep Power-Down current:
CK_t=LOW, CK_c=HIGH;
CKE is LOW;
CA bus inputs are STABLE;
Data bus inputs are STABLE;
Symbol
Power Supply
400 MHz
533 MHz
Unit
Notes
IDD4R1
VDD1
5
5
mA
1
IDD4R2
VDD2
140
180
mA
1
IDD4RIN
VDDCA
6
6
mA
1
IDD4W1
VDD1
5
5
mA
1
IDD4W2
VDD2
150
190
mA
1
IDD4WIN
VDDCA
VDDQ
20
20
mA
1, 2
IDD51
VDD1
55
55
mA
1
IDD52
VDD2
40
40
mA
1
IDD5IN
VDDCA
VDDQ
6
6
mA
1, 2
IDD5AB1
VDD1
5
5
mA
1
IDD5AB2
VDD2
18
18
mA
1
IDD5ABIN
VDDCA
VDDQ
6
6
mA
1, 2
IDD5PB1
VDD1
5
5
mA
1
IDD5PB2
VDD2
18
18
mA
1
IDD5PBIN
VDDCA
VDDQ
6
6
mA
1, 2
IDD81
VDD1
20
20
µA
1
IDD82
VDD2
20
20
µA
1
IDD8IN
VDDCA
VDDQ
25
25
µA
1, 2
Notes:
1. IDD values published are the maximum of the distribution of the arithmetic mean.
2. Measured currents are the summation of VDDQ and VDDCA.
3. IDD current specifications are tested after the device is properly initialized.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 101 -
W97BH6KB / W97BH2KB
8.3.2.2
IDD6 Partial Array Self-Refresh Current, -40°C~85°C (x16, x32)
Parameter
Full Array
1/2 Array
IDD6 Partial Array
Self-Refresh
Current
1/4 Array
1/8 Array
Symbol Power Supply
400 MHz
533 MHz
IDD61
VDD1
3000
3000
IDD62
VDD2
3500
3500
IDD6IN
VDDCA
VDDQ
60
60
IDD61
VDD1
2500
2500
IDD62
VDD2
3200
3200
IDD6IN
VDDCA
VDDQ
60
60
IDD61
VDD1
2250
2250
IDD62
VDD2
3000
3000
IDD6IN
VDDCA
VDDQ
60
60
IDD61
VDD1
2100
2100
IDD62
VDD2
2900
2900
IDD6IN
VDDCA
VDDQ
60
60
Condition
Unit
µA
µA
Self refresh current
CK_t=LOW, CK_c=HIGH;
CKE is LOW;
CA bus inputs are STABLE;
Data bus inputs are STABLE;
µA
µA
Notes:
1. LPDDR2-S4 SDRAM uses the same PASR scheme & IDD6 current value categorization as LPDDR (JESD209).
2. LPDDR2-S4 SDRAM devices support both bank-masking & segment-masking. The IDD6 currents are measured using bank-masking only.
3. IDD values published are the maximum of the distribution of the arithmetic mean.
8.4
Clock Specification
The jitter specified is a random jitter meeting a Gaussian distribution. Input clocks violating the min/max values may
result in malfunction of the LPDDR2 device.
8.4.1
Definition for tCK(avg) and nCK
tCK(avg) is calculated as the average clock period across any consecutive 200 cycle window, where each clock period
is calculated from rising edge to rising edge.
tCK(avg) =
where
N
tCK / N
j
j 1
N = 200
Unit ‘tCK(avg)’ represents the actual clock average tCK(avg) of the input clock under operation. Unit ‘nCK’ represents
one clock cycle of the input clock, counting the actual clock edges.
tCK(avg) may change by up to ± 1% within a 100 clock cycle window, provided that all jitter and timing specs are met.
8.4.2
Definition for tCK(abs)
tCK(abs) is defined as the absolute clock period, as measured from one rising edge to the next consecutive rising
edge.
tCK(abs) is not subject to production test.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 102 -
W97BH6KB / W97BH2KB
8.4.3
Definition for tCH(avg) and tCL(avg)
tCH(avg) is defined as the average high pulse width, as calculated across any consecutive 200 high pulses.
N
tCH(avg) = tCH j / (N × tCK(avg))
j 1
where
N = 200
tCL(avg) is defined as the average low pulse width, as calculated across any consecutive 200 low pulses.
N
tCL(avg) = tCL j / (N × tCK(avg))
j 1
where
N = 200
8.4.4
Definition for tJIT(per)
tJIT(per) is the single period jitter defined as the largest deviation of any signal tCK from tCK(avg).
tJIT(per) = Min/max of {tCKi - tCK(avg) where i = 1 to 200}.
tJIT(per),act is the actual clock jitter for a given system.
tJIT(per),allowed is the specified allowed clock period jitter.
tJIT(per) is not subject to production test.
8.4.5
Definition for tJIT(cc)
tJIT(cc) is defined as the absolute difference in clock period between two consecutive clock cycles.
tJIT(cc) = Max of |{tCKi +1 - tCKi}|.
tJIT(cc) defines the cycle to cycle jitter.
tJIT(cc) is not subject to production test.
8.4.6
Definition for tERR(nper)
tERR(nper) is defined as the cumulative error across n multiple consecutive cycles from tCK(avg).
tERR(nper),act is the actual clock jitter over n cycles for a given system.
tERR(nper),allowed is the specified allowed clock period jitter over n cycles.
tERR(nper) is not subject to production test.
tERR(nper) =
in1
tCK j –
j i
n × tCK(avg)
tERR(nper),min can be calculated by the formula shown below:
tERR(nper), min = (1 + 0.68LN(n)) × tJIT(per), min
tERR(nper),max can be calculated by the formula shown below:
tERR(nper), max = (1 + 0.68LN(n)) × tJIT(per), max
Using these equations, tERR(nper) tables can be generated for each tJIT(per),act value.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 103 -
W97BH6KB / W97BH2KB
8.4.7
Definition for duty Dycle Jitter tJIT(duty)
tJIT(duty) is defined with absolute and average specification of tCH / tCL.
tJIT(duty),min = MIN((tCH(abs),min – tCH(avg),min),(tCL(abs),min – tCL(avg),min)) x tCK(avg)
tJIT(duty),max = MAX((tCH(abs),max – tCH(avg),max),(tCL(abs),max – tCL(avg),max)) x tCK(avg)
8.4.8
Definition for tCK(abs), tCH(abs) and tCL(abs)
These parameters are specified per their average values, however it is understood that the following relationship
between the average timing and the absolute instantaneous timing holds at all times.
Table of Definition for tCK(abs), tCH(abs), and tCL(abs)
Parameter
Symbol
Min
Unit
Absolute Clock Period
tCK(abs)
tCK(avg),min + tJIT(per),min
pS
Absolute Clock HIGH Pulse Width
tCH(abs)
tCH(avg),min + tJIT(duty),min / tCK(avg)min
tCK(avg)
Absolute Clock LOW Pulse Width
tCL(abs)
tCL(avg),min + tJIT(duty),min / tCK(avg)min
tCK(avg)
Notes:
1. tCK(avg),min is expressed is pS for this table.
2. tJIT(duty),min is a negative value.
8.5
Period Clock Jitter
LPDDR2 devices can tolerate some clock period jitter without core timing parameter de-rating. This section
describes device timing requirements in the presence of clock period jitter (t JIT(per)) in excess of the values found in
section 8.7.1 “LPDDR2 AC Timing” table and how to determine cycle time de-rating and clock cycle de-rating.
8.5.1
Clock Period Jitter Effects on Core Timing Parameters
(tRCD, tRP, tRTP, tWR, tWRA, tWTR, tRC, tRAS, tRRD, tFAW)
Core timing parameters extend across multiple clock cycles. Period clock jitter will impact these parameters when
measured in numbers of clock cycles. When the device is operated with clock jitter within the specification limits, the
LPDDR2 device is characterized and verified to support tnPARAM = RU{tPARAM / tCK(avg)}.
When the device is operated with clock jitter outside specification limits, the number of clocks or t CK(avg) may need to
be increased based on the values for each core timing parameter.
8.5.1.1 Cycle Time De-rating for Core Timing Parameters
For a given number of clocks (tnPARAM), for each core timing parameter, average clock period (t CK(avg)) and actual
cumulative period error (tERR(tnPARAM),act) in excess of the allowed cumulative period error (tERR(tnPARAM),allowed),
the equation below calculates the amount of cycle time de-rating (in nS) required if the equation results in a positive
value for a core timing parameter (tCORE).
CycleTimeDerating = MAX tPARAM tERR(tnPARAM), act tERR(tnPARAM), allowed tCK (avg) , 0
tnPARAM
A cycle time derating analysis should be conducted for each core timing parameter. The amount of cycle time
derating required is the maximum of the cycle time de-ratings determined for each individual core timing parameter.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 104 -
W97BH6KB / W97BH2KB
8.5.1.2 Clock Cycle De-rating for Core Timing Parameters
For a given number of clocks (tnPARAM) for each core timing parameter, clock cycle de-rating should be specified
with amount of period jitter (tJIT(per)).
For a given number of clocks (tnPARAM), for each core timing parameter, average clock period (t CK(avg)) and actual
cumulative period error (tERR(tnPARAM),act) in excess of the allowed cumulative period error (tERR(tnPARAM),allowed),
the equation below calculates the clock cycle derating (in clocks) required if the equation results in a positive value
for a core timing parameter (tCORE).
ClockCycleDerating = RU tPARAM tERR(tnPARAM), act tERR(tnPARAM), allowed tnPARAM
tCK(avg)
A clock cycle de-rating analysis should be conducted for each core timing parameter.
8.5.2
Clock Jitter Effects on Command/Address Timing Parameters
(tIS, tIH, tISCKE, tIHCKE, tISb, tIHb, tISCKEb, tIHCKEb)
These parameters are measured from a command/address signal (CKE, CS, CA0 - CA9) transition edge to its
respective clock signal (CK_t/CK_c) crossing. The spec values are not affected by the amount of clock jitter applied
(i.e. tJIT(per), as the setup and hold are relative to the clock signal crossing that latches the command/address.
Regardless of clock jitter values, these values shall be met.
8.5.3
Clock Jitter Effects on Read tTiming Parameters
8.5.3.1 tRPRE
When the device is operated with input clock jitter, tRPRE needs to be de-rated by the actual period jitter
(tJIT(per),act,max) of the input clock in excess of the allowed period jitter (t JIT(per),allowed,max). Output de-ratings are
relative to the input clock.
tJIT ( per ), act ,max tJIT ( per ),allowed ,max
tCK (avg)
tRPRE(min, derated) = 0.9
For example,
if the measured jitter into a LPDDR2-800 device has tCK(avg) = 2500 pS, tJIT(per),act,min = -172 pS and
tJIT(per),act,max = + 193 pS, then
tRPRE,min,derated = 0.9 - (tJIT(per),act,max - tJIT(per),allowed,max)/tCK(avg) = 0.9 - (193 - 100)/2500= .8628 tCK(avg)
8.5.3.2 tLZ(DQ), tHZ(DQ), tDQSCK, tLZ(DQS), tHZ(DQS)
These parameters are measured from a specific clock edge to a data signal (DMn, DQm.: n=0,1,2,3. m=0–31)
transition and will be met with respect to that clock edge. Therefore, they are not affected by the amount of clock
jitter applied (i.e. tJIT(per).
8.5.3.3 tQSH, tQSL
These parameters are affected by duty cycle jitter which is represented by t CH(abs)min and tCL(abs)min.
tQSH(abs)min = tCH(abs)min – 0.05
tQSL(abs)min = tCL(abs)min – 0.05
These parameters determine absolute Data-Valid window at the LPDDR2 device pin.
Absolute min data-valid window @ LPDDR2 device pin =
min { ( tQSH(abs)min * tCK(avg)min – tDQSQmax – tQHSmax ) , ( tQSL(abs)min * tCK(avg)min – tDQSQmax – tQHSmax ) }
This minimum data-valid window shall be met at the target frequency regardless of clock jitter.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 105 -
W97BH6KB / W97BH2KB
8.5.3.4 tRPST
tRPST is affected by duty cycle jitter which is represented by tCL(abs). Therefore tRPST(abs)min can be specified by
tCL(abs)min.
tRPST(abs)min = tCL(abs)min – 0.05 = tQSL(abs)min
8.5.4
Clock Jitter Effects on Write Timing Parameters
8.5.4.1 tDS, tDH
These parameters are measured from a data signal (DMn, DQm.: n=0,1,2,3. m=0–31) transition edge to its
respective data strobe signal (DQSn_t, DQSn_c: n=0,1,2,3) crossing. The spec values are not affected by the
amount of clock jitter applied (i.e. tJIT(per), as the setup and hold are relative to the clock signal crossing that latches
the command/address. Regardless of clock jitter values, these values shall be met.
8.5.4.2 tDSS, tDSH
These parameters are measured from a data strobe signal (DQSx_t, DQSx_c) crossing to its respective clock signal
(CK_t/CK_c) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. t JIT(per), as the
setup and hold are relative to the clock signal crossing that latches the command/address. Regardless of clock jitter
values, these values shall be met.
8.5.4.3 tDQSS
This parameter is measured from a data strobe signal (DQSx_t, DQSx_c) crossing to the subsequent clock signal
(CK_t/CK_c) crossing. When the device is operated with input clock jitter, this parameter needs to be de-rated by the
actual period jitter tJIT(per),act of the input clock in excess of the allowed period jitter tJIT(per),allowed.
tDQSS(min, derated) = 0.75
tJIT ( per ), act ,min tJIT ( per ),allowed ,min
tCK (avg)
tDQSS(max, derated) = 1.25
tJIT ( per ), act ,max tJIT ( per ),allowed ,max
tCK (avg)
For example,
if the measured jitter into a LPDDR2-800 device has tCK(avg) = 2500 pS, tJIT(per),act,min = -172 pS and
tJIT(per),act,max = + 193 pS, then
tDQSS,(min,derated) = 0.75 - (tJIT(per),act,min - tJIT(per),allowed,min)/tCK(avg) = 0.75 - (-172 + 100)/2500 = .7788 tCK(avg)
and
tDQSS,(max,derated) = 1.25 - (tJIT(per),act,max - tJIT(per),allowed,max)/tCK(avg) = 1.25 - (193 - 100)/2500 = 1.2128 tCK(avg)
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 106 -
W97BH6KB / W97BH2KB
8.6
8.6.1
Refresh Requirements
Refresh Requirement Parameters
Parameter
Symbol
Number of Banks
2 Gb
Unit
8
Refresh Window TCASE ≤ 85°C
tREFW
32
R
8,192
REFab
tREFI
3.9
µS
REFpb
tREFIpb
0.4875
µS
Refresh Cycle time
tRFCab
130
nS
Per Bank Refresh Cycle time
tRFCpb
60
nS
Burst Refresh Window = 4 x 8 x tRFCab
tREFBW
4.16
µS
Required number of REFRESH commands (min)
Average time between REFRESH commands
(for reference only) TCASE ≤ 85°C
mS
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 107 -
W97BH6KB / W97BH2KB
8.7
AC Timings
8.7.1
LPDDR2 AC Timing
(Note 6 apply to the entire table)
Parameter
Symbol
Max. Frequency*4
min /
max
~
min
tCK
Data Rate
1066
933
800
667
533
400
333
533
466
400
333
266
200
166
2.15
2.5
3
3.75
5
6
Unit
MHz
Clock Timing
Average Clock Period
tCK(avg)
Average high pulse width
tCH(avg)
Average low pulse width
tCL(avg)
Absolute Clock Period
MIN
1.875
MAX
100
MIN
0.45
MAX
0.55
MIN
0.45
MAX
0.55
tCK(avg)
tCK(avg)
tCK(abs)
MIN
tCK(avg)min + tJIT(per)min
Absolute clock HIGH pulse width
(with allowed jitter)
tCH(abs),
MIN
0.43
allowed
MAX
0.57
Absolute clock LOW pulse width
(with allowed jitter)
tCL(abs),
MIN
0.43
(allowed)
MAX
0.57
Clock Period Jitter
(with allowed jitter)
tJIT(per),
MIN
-90
-95
-100
-110
-120
-140
-150
(allowed)
MAX
90
95
100
110
120
140
150
MAX
180
190
200
220
240
280
300
Maximum Clock Jitter between
two consecutive clock cycles
(with allowed jitter)
tJIT(cc),
allowed
pS
tCK(avg)
tCK(avg)
pS
pS
MIN
MIN ((tCH(abs),min - tCH(avg),min),
(tCL(abs),min - tCL(avg),min)) * tCK(avg)
pS
MAX
MAX ((tCH(abs),max - tCH(avg),max),
(tCL(abs),max - tCL(avg),max)) * tCK(avg)
pS
Duty cycle Jitter
(with allowed jitter)
tJIT(duty),
Cumulative error across 2 cycles
tERR(2per),
MIN
-132
-140
-147
-162
-177
-206
-221
(allowed)
MAX
132
140
147
162
177
206
221
Cumulative error across 3 cycles
tERR(3per),
MIN
-157
-166
-175
-192
-210
-245
-262
(allowed)
MAX
157
166
175
192
210
245
262
Cumulative error across 4 cycles
tERR(4per),
MIN
-175
-185
-194
-214
-233
-272
-291
(allowed)
MAX
175
185
194
214
233
272
291
Cumulative error across 5 cycles
tERR(5per),
MIN
-188
-199
-209
-230
-251
-293
-314
(allowed)
MAX
188
199
209
230
251
293
314
Cumulative error across 6 cycles
tERR(6per),
MIN
-200
-211
-222
-244
-266
-311
-333
(allowed)
MAX
200
211
222
244
266
311
333
Cumulative error across 7 cycles
tERR(7per),
MIN
-209
-221
-232
-256
-279
-325
-348
(allowed)
MAX
209
221
232
256
279
325
348
Cumulative error across 8 cycles
tERR(8per),
MIN
-217
-229
-241
-266
-290
-338
-362
(allowed)
MAX
217
229
241
266
290
338
362
Cumulative error across 9 cycles
tERR(9per),
MIN
-224
-237
-249
-274
-299
-349
-374
(allowed)
MAX
224
237
249
274
299
349
374
Cumulative error across 10
cycles
tERR(10per),
MIN
-231
-244
-257
-282
-308
-359
-385
(allowed)
MAX
231
244
257
282
308
359
385
Cumulative error across 11
cycles
tERR(11per),
MIN
-237
-250
-263
-289
-316
-368
-395
(allowed)
MAX
237
250
263
289
316
368
395
Cumulative error across 12
cycles
tERR(12per),
MIN
-242
-256
-269
-296
-323
-377
-403
(allowed)
MAX
242
256
269
296
323
377
403
Cumulative error across n = 13,
14 . . . 49, 50 cycles
tERR(nper),
MIN
tERR(nper),allowed,min
(allowed)
MAX
tERR(nper),allowed,max = (1 + 0.68ln(n)) * tJIT(per),allowed,max
allowed
nS
= (1 + 0.68ln(n)) * tJIT(per),allowed,min
pS
pS
pS
pS
pS
pS
pS
pS
pS
pS
pS
pS
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 108 -
W97BH6KB / W97BH2KB
Parameter
Symbol
min /
max
Data Rate
min
tCK
1066
933
800
667
533
400
333
Unit
ZQ Calibration Parameters
Initialization Calibration Time
tZQINIT
MIN
1
µS
Full Calibration Time
tZQCL
MIN
6
360
nS
Short Calibration Time
tZQCS
MIN
6
90
nS
Calbration Reset Time
tZQRESET
MIN
3
50
nS
*11
Read Parameters
MIN
2500
MAX
5500
DQS output access time from CK_t/CK_c
tDQSCK
DQSCK Delta Short*15
tDQSCKDS
MAX
330
DQSCK Delta Medium
*16
380
pS
450
540
670
900
1080
pS
tDQSCKDM
MAX
680
780
900
1050
1350
1800
1900
pS
DQSCK Delta Long*17
tDQSCKDL
MAX
920
1050
1200
1400
1800
2400
-
pS
DQS - DQ skew
tDQSQ
MAX
200
220
240
280
340
400
500
pS
Data hold skew factor
tQHS
MAX
230
260
280
340
400
480
600
pS
DQS Output High Pulse Width
tQSH
MIN
DQS Output Low Pulse Width
tQSL
Data Half Period
tQHP
DQ / DQS output hold time from DQS
Read preamble
*12,*13
Read postamble*12,*14
DQS low-Z from clock
*12
DQ low-Z from clock*12
DQS high-Z from clock
DQ high-Z from clock
*12
*12
tCH(abs) - 0.05
tCK(avg)
MIN
tCL(abs) - 0.05
tCK(avg)
MIN
min(tQSH, tQSL)
tCK(avg)
tQH
MIN
tQHP - tQHS
pS
tRPRE
MIN
0.9
tCK(avg)
tRPST
MIN
tCL(abs) - 0.05
tCK(avg)
tLZ(DQS)
MIN
tDQSCK(MIN) - 300
pS
tLZ(DQ)
MIN
tDQSCK(MIN) - (1.4 * tQHS(MAX))
pS
tHZ(DQS)
MAX
tDQSCK(MAX) - 100
pS
MAX
tDQSCK(MAX) + (1.4 * tDQSQ(MAX))
pS
tHZ(DQ)
Write Parameters*11
DQ and DM input hold time (Vref based)
tDH
MIN
210
235
270
350
430
480
600
DQ and DM input setup time (Vref based)
tDS
MIN
210
235
270
DQ and DM input pulse width
tDIPW
MIN
0.35
350
430
480
600
Write command to 1st DQS latching
transition
tDQSS
DQS input high-level width
pS
pS
tCK(avg)
MIN
0.75
MAX
1.25
tDQSH
MIN
0.4
tCK(avg)
tCK(avg)
DQS input low-level width
tDQSL
MIN
0.4
tCK(avg)
DQS falling edge to CK setup time
tDSS
MIN
0.2
tCK(avg)
DQS falling edge hold time from CK
tDSH
MIN
0.2
tCK(avg)
Write postamble
tWPST
MIN
0.4
tCK(avg)
Write preamble
tWPRE
MIN
0.35
tCK(avg)
3
tCK(avg)
CKE Input Parameters
CKE min. pulse width (high and low pulse
width)
tCKE
CKE input setup time
tISCKE*2
MIN
0.25
tCK(avg)
*3
MIN
0.25
tCK(avg)
CKE input hold time
tIHCKE
MIN
3
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 109 -
W97BH6KB / W97BH2KB
Parameter
Symbol
min /
max
min
tCK
Data Rate
1066
933
800
667
533
400
333
Unit
Command Address Input Parameters*11
Address and control input setup time
(Vref based)
tIS*1
MIN
220
250
290
370
460
600
740
pS
Address and control input hold time
(Vref based)
tIH*1
MIN
220
250
290
370
460
600
740
pS
tIPW
MIN
Address and control input pulse width
0.40
tCK(avg)
Boot Parameters (10 MHz - 55 MHz)*5, 7, 8
Clock Cycle Time
tCKb
MAX
100
MIN
18
nS
CKE Input Setup Time
tISCKEb
MIN
2.5
nS
CKE Input Hold Time
tIHCKEb
MIN
2.5
nS
Address & Control Input Setup Time
tISb
MIN
1150
pS
Address & Control Input Hold Time
tIHb
MIN
1150
pS
MIN
2.0
MAX
10.0
MAX
1.2
nS
MAX
1.2
nS
DQS Output Data Access Time
from CK_t/CK_c
tDQSCKb
Data Strobe Edge to
Ouput Data Edge tDQSQb - 1.2
tDQSQb
Data Hold Skew Factor
tQHSb
nS
Mode Register Parameters
MODE REGISTER Write command period
tMRW
MIN
5
5
tCK(avg)
Mode Register Read command period
tMRR
MIN
2
2
tCK(avg)
LPDDR2 SDRAM Core Parameters
*9
Read Latency
RL
MIN
3
8
7
6
5
4
3
3
tCK(avg)
Write Latency
WL
MIN
1
4
4
3
2
2
1
1
tCK(avg)
ACTIVE to ACTIVE command period
tRC
MIN
CKE min. pulse width during Self-Refresh
(low pulse width during Self-Refresh)
tCKESR
MIN
Self refresh exit to next valid command
delay
tXSR
Exit power down to next valid command
delay
tRAS + tRPab (with all-bank Precharge)
tRAS + tRPpb (with per-bank Precharge)
nS
3
15
nS
MIN
2
tRFCab + 10
nS
tXP
MIN
2
7.5
nS
CAS to CAS delay
tCCD
MIN
2
2
tCK(avg)
Internal Read to Precharge command delay
tRTP
MIN
2
7.5
nS
RAS to CAS Delay
tRCD
Fast
3
15
nS
Row Precharge Time (single bank)
tRPpb
Fast
3
15
nS
Row Precharge Time (all banks)
tRPab
8-bank
Fast
3
18
nS
Row Active Time
tRAS
MIN
3
42
nS
MAX
-
70
µS
Write Recovery Time
tWR
MIN
3
15
nS
Internal Write to Read Command Delay
tWTR
MIN
2
Active bank A to Active bank B
tRRD
MIN
2
Four Bank Activate Window
tFAW
MIN
8
Minimum Deep Power Down Time
tDPD
MIN
7.5
10
nS
10
50
nS
60
500
nS
µS
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 110 -
W97BH6KB / W97BH2KB
Parameter
Symbol
min /
max
min
tCK
Data Rate
1066
933
800
667
Unit
533
400
333
LPDDR2 Temperature De-Rating
tDQSCK De-Rating
Core Timings Temperature De-Rating
tDQSCK
(Derated)
MAX
tRCD
(Derated)
5620
6000
pS
MIN
tRCD + 1.875
nS
tRC
(Derated)
MIN
tRC + 1.875
nS
tRAS
(Derated)
MIN
tRAS + 1.875
nS
tRP
(Derated)
MIN
tRP + 1.875
nS
tRRD
(Derated)
MIN
tRRD + 1.875
nS
Notes:
1. Input set-up/hold time for signal (CA[0:n], CS_n).
2. CKE input setup time is measured from CKE reaching high/low voltage level to CK_t/CK_c crossing.
3. CKE input hold time is measured from CK_t/CK_c crossing to CKE reaching high/low voltage level.
4. Frequency values are for reference only. Clock cycle time (t CK) shall be used to determine device capabilities.
5. To guarantee device operation before the LPDDR2 device is configured a number of AC boot timing parameters are defined in this table.
Boot parameter symbols have the letter b appended, e.g. tCK during boot is tCKb.
6. Frequency values are for reference only. Clock cycle time (t CK or tCKb) shall be used to determine device capabilities.
7. The SDRAM will set some Mode register default values upon receiving a RESET (MRW) command as specified in “Mode Register
Definition”.
8. The output skew parameters are measured with Ron default settings into the reference load.
9. The min tCK column applies only when tCK is greater than 6nS for LPDDR2-S4 devices.
10. All AC timings assume an input slew rate of 1V/nS.
11. Read, Write, and Input Setup and Hold values are referenced to Vref.
12. For low-to-high and high-to-low transitions, the timing reference will be at the point when the signal crosses VTT. tHZ and tLZ transitions
occur in the same access time (with respect to clock) as valid data transitions. These parameters are not referenced to a specific voltage
level but to the time when the device output is no longer driving (for tRPST, tHZ(DQS) and tHZ(DQ) ), or begins driving (for tRPRE, tLZ(DQS),
tLZ(DQ) ). Below “HSUL_12 Driver Output Reference Load for Timing and Slew Rate” figure shows a method to calculate the point when
device is no longer driving tHZ(DQS) and tHZ(DQ), or begins driving tLZ(DQS), tLZ(DQ) by measuring the signal at two different voltages. The
actual voltage measurement points are not critical as long as the calculation is consistent.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 111 -
W97BH6KB / W97BH2KB
VOH
X
VOH - X mV
2x X
VTT + 2x Y mV
VOH - 2x X mV
VTT + Y mV
tLZ(DQS), tLZ(DQ)
VTT
VTT
Y
Actual waveform
2x Y
VTT - Y mV
tHZ(DQS), tHZ(DQ)
VOL + 2x X mV
VTT - 2x Y mV
VOL + X mV
T1 T2
VOL
T1T2
Stop driving point = 2 x T1 – T2
begin driving point = 2 x T1 – T2
Figure of HSUL_12 Driver Output Reference Load for Timing and Slew Rate
The parameters tLZ(DQS), tLZ(DQ), tHZ(DQS), and tHZ(DQ) are defined as single-ended. The timing parameters tRPRE
and tRPST are determined from the differential signal DQS_t-DQS_c.
13. Measured from the start driving of DQS_t - DQS_c to the start driving the first rising strobe edge.
14. Measured from the from start driving the last falling strobe edge to the stop driving DQS_t , DQS_c.
15. tDQSCKDS is the absolute value of the difference between any two tDQSCK measurements (within a byte lane) within a contiguous sequence
of bursts within a 160nS rolling window. tDQSCKDS is not tested and is guaranteed by design. Temperature drift in the system is < 10°C/s.
Values do not include clock jitter.
16. tDQSCKDM is the absolute value of the difference between any two tDQSCK measurements (within a byte lane) within a 1.6µS rolling window.
tDQSCKDM is not tested and is guaranteed by design. Temperature drift in the system is < 10°C/s. Values do not include clock jitter.
17. tDQSCKDL is the absolute value of the difference between any two tDQSCK measurements (within a byte lane) within a 32mS rolling window.
tDQSCKDL is not tested and is guaranteed by design. Temperature drift in the system is < 10°C/s. Values do not include clock jitter.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 112 -
W97BH6KB / W97BH2KB
8.7.2
CA and CS_n Setup, Hold and Derating
For all input signals (CA and CS_n) the total t IS (setup time) and tIH (hold time) required is calculated by adding the
data sheet tIS(base) and tIH(base) value (see 8.7.2.1 “CA and CS_n Setup and Hold Base-Values for 1V/nS” table)
to the ΔtIS and ΔtIH derating value (see 8.7.2.2 “Derating Values LPDDR2 tIS/tIH - AC/DC Based AC220” table).
Example: tIS (total setup time) = tIS(base) + ΔtIS.
Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V REF(dc) and
the first crossing of VIH(ac)min. Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the
last crossing of VREF(dc) and the first crossing of VIL(ac)max. If the actual signal is always earlier than the nominal slew
rate line between shaded ‘VREF(dc) to ac region’, use nominal slew rate for derating value (see 8.7.2.4 “Nominal
Slew Rate and tVAC for Setup Time tIS for CA and CS_n with Respect to Clock” figure). If the actual signal is
later than the nominal slew rate line anywhere between shaded ‘V REF(dc) to ac region’, the slew rate of a tangent line
to the actual signal from the ac level to dc level is used for derating value (see 8.7.2.6 “Tangent Line for Setup
Time tIS for CA and CS_n with Respect to Clock” figure).
Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V IL(dc)max and
the first crossing of VREF(dc). Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the
last crossing of VIH(dc)min and the first crossing of VREF(dc). If the actual signal is always later than the nominal slew
rate line between shaded ‘dc to VREF(dc) region’, use nominal slew rate for derating value (see 8.7.2.5 “Nominal
Slew Rate for Hold Time tIH for CA and CS_n with Respect to Clock” figure). If the actual signal is earlier than
the nominal slew rate line anywhere between shaded ‘dc to V REF(dc) region’, the slew rate of a tangent line to the
actual signal from the dc level to VREF(dc) level is used for derating value (see 8.7.2.7 “Tangent Line for Hold Time
tIH for CA and CS_n with Respect to Clock” figure).
For a valid transition the input signal has to remain above/below V IH/IL(ac) for some time tVAC (see 8.7.2.3 “Required
Time tVAC above VIH(ac) {below VIL(ac)} for Valid Transition” table).
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached
VIH/IL(ac) at the time of the rising clock transition) a valid input signal is still required to complete the transition and
reach VIH/IL(ac).
For slew rates in between the values listed in 8.7.2.2 “Derating Values LPDDR2 tIS/tIH - AC/DC Based AC220”
table, the derating values may obtained by linear interpolation. These values are typically not subject to production
test. They are verified by design and characterization.
8.7.2.1
CA and CS_n Setup and Hold Base-Values for 1V/nS
Unit [pS]
LPDDR2-1066
LPDDR2-800
reference
tIS(base)
0
70
VIH/L(ac) = VREF(dc) ± 220mV
tIH(base)
90
160
VIH/L(dc) = VREF(dc) ± 130mV
Note: ac/dc referenced for 1V/nS CA and CS_n slew rate and 2V/nS differential CK_t-CK_c slew rate.
Publication Release Date: Apr. 28, 2016
Revision: A01-001
- 113 -
W97BH6KB / W97BH2KB
8.7.2.2
Derating Values LPDDR2 tIS/tIH - AC/DC Based AC220
ΔtIS, ΔtIH derating in [pS] AC/DC based
AC220 Threshold -> VIH(ac)=VREF(dc)+220mV, VIL(ac)=VREF(dc)-220mV
DC130 Threshold -> VIH(dc)=VREF(dc)+130mV, VIL(dc)=VREF(dc)-130mV
CA, CS_n
Slew Rate
V/nS
CK_t,CK_c Differential Slew Rate
4.0 V/nS
3.0 V/nS
2.0 V/nS
1.8 V/nS
1.6 V/nS
1.4 V/nS
1.2 V/nS
1.0 V/nS
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
2.0
110
65
110
65
110
65
-
-
-
-
-
-
-
-
-
-
1.5
74
43
73
43
73
43
89
59
-
-
-
-
-
-
-
-
1.0
0
0
0
0
0
0
16
16
32
32
-
-
-
-
-
-
0.9
-
-
-3
-5
-3
-5
13
11
29
27
45
43
-
-
-
-
0.8
-
-
-
-
-8
-13
8
3
24
19
40
35
56
55
-
-
0.7
-
-
-
-
-
-
2
-6
18
10
34
26
50
46
66
78
0.6
-
-
-
-
-
-
-
-
10
-3
26
13
42
33
58
65
0.5
-
-
-
-
-
-
-
-
-
-
4
-4
20
16
36
48
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-7
2
17
34
Note: Cell contents ‘-’ are defined as not supported.
8.7.2.3
Required Time tVAC above VIH(ac) {below VIL(ac)} for Valid Transition
Slew Rate [V/nS]
tVAC @ 220mV [pS]
min
max
> 2.0
175
-
2.0
170
-
1.5
167
-
1.0
163
-
0.9
162
-
0.8
161
-
0.7
159
-
0.6
155
-
0.5
150
-
VIH(ac) = VREF(dc) + 220mV, VIL(ac) = VREF(dc) - 220mV
DC130 Threshold -> VIH(dc) = VREF(dc) + 130mV, VIL(dc) = VREF(dc) - 130mV
DQS_t, DQS_c Differential Slew Rate
DQ, DM Slew
Rate V/nS
4.0 V/nS
3.0 V/nS
2.0 V/nS
1.8 V/nS
1.6 V/nS
1.4 V/nS
1.2 V/nS
1.0 V/nS
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
2.0
110
65
110
65
110
65
-
-
-
-
-
-
-
-
-
-
1.5
74
43
73
43
73
43
89
59
-
-
-
-
-
-
-
-
1.0
0
0
0
0
0
0
16
16
32
32
-
-
-
-
-
-
0.9
-
-
-3
-5
-3
-5
13
11
29
27
45
43
-
-
-
-
0.8
-
-
-
-
-8
-13
8
3
24
19
40
35
56
55
-
-
0.7
-
-
-
-
-
-
2
-6
18
10
34
26
50
46
66
78
0.6
-
-
-
-
-
-
-
-
10
-3
26
13
42
33
58
65
0.5
-
-
-
-
-
-
-
-
-
-
4
-4
20
16
36
48
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-7
2
17
34
Note: Cell contents ‘-’ are defined as not supported.
8.7.3.3
Required Time tVAC above VIH(ac) {below VIL(ac)} for Valid Transition
Slew Rate [V/nS]
tVAC @ 220mV [pS]
min
max
> 2.0
175
-
2.0
170
-
1.5
167
-
1.0
163
-
0.9
162
-
0.8
161
-
0.7
159
-
0.6
155
-
0.5
150
-
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