W9825G6JH 4 M 4 BANKS 16 BITS SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION ......................................................................................................... 3 FEATURES ................................................................................................................................. 3 AVAILABLE PART NUMBER...................................................................................................... 4 PIN CONFIGURATION ............................................................................................................... 4 PIN DESCRIPTION ..................................................................................................................... 5 BLOCK DIAGRAM ...................................................................................................................... 6 FUNCTIONAL DESCRIPTION.................................................................................................... 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 7.12 7.13 7.14 7.15 7.16 7.17 7.18 7.19 7.20 8. 9. Power Up and Initialization ............................................................................................. 7 Programming Mode Register .......................................................................................... 7 Bank Activate Command ................................................................................................ 7 Read and Write Access Modes ...................................................................................... 7 Burst Read Command .................................................................................................... 8 Burst Write Command .................................................................................................... 8 Read Interrupted by a Read ........................................................................................... 8 Read Interrupted by a Write ............................................................................................ 8 W rite Interrupted by a Write ............................................................................................ 8 W rite Interrupted by a Read ............................................................................................ 8 Burst Stop Command ..................................................................................................... 8 Addressing Sequence of Sequential Mode .................................................................... 9 Addressing Sequence of Interleave Mode ...................................................................... 9 Auto-precharge Command ........................................................................................... 10 Precharge Command .................................................................................................... 10 Self Refresh Command ................................................................................................ 10 Power Down Mode........................................................................................................ 11 No Operation Command ............................................................................................... 11 Deselect Command ...................................................................................................... 11 Clock Suspend Mode .................................................................................................... 11
OPERATION MODE ................................................................................................................. 12 ELECTRICAL CHARACTERISTICS ......................................................................................... 13 9.1 9.2 Absolute Maximum Ratings .......................................................................................... 13 Recommended DC Operating Conditions .................................................................... 13
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9.3 9.4 9.5 10. 10.1 10.2 10.3 10.4 11. 11.1 11.2 11.3 11.4 11.5 11.6 11.7 11.8 11.9 11.10 11.11 11.12 11.13 11.14 11.15 11.16 11.17 11.18 11.19 11.20 11.21 11.22 12. 13. 12.1 Capacitance .................................................................................................................. 13 DC Characteristics ........................................................................................................ 14 AC Characteristics and Operating Condition ................................................................ 15 Command Input Timing ................................................................................................ 17 Read Timing.................................................................................................................. 18 Control Timing of Input/Output Data ............................................................................. 19 Mode Register Set Cycle .............................................................................................. 20 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) ...................................... 21 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge) ........... 22 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) ...................................... 23 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge) ........... 24 Interleaved Bank Write (Burst Length = 8) ................................................................... 25 Interleaved Bank Write (Burst Length = 8, Auto-precharge) ........................................ 26 Page Mode Read (Burst Length = 4, CAS Latency = 3)............................................... 27 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3) ................................... 28 Auto-precharge Read (Burst Length = 4, CAS Latency = 3) ........................................ 29 Auto-precharge Write (Burst Length = 4) .................................................................... 30 Auto Refresh Cycle ..................................................................................................... 31 Self Refresh Cycle ....................................................................................................... 32 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3) ............................ 33 Power Down Mode ...................................................................................................... 34 Auto-precharge Timing (Read Cycle) .......................................................................... 35 Auto-precharge Timing (Write Cycle) .......................................................................... 36 Timing Chart of Read to Write Cycle ........................................................................... 37 Timing Chart of Write to Read Cycle ........................................................................... 37 Timing Chart of Burst Stop Cycle (Burst Stop Command) .......................................... 38 Timing Chart of Burst Stop Cycle (Precharge Command) .......................................... 38 CKE/DQM Input Timing (Write Cycle) ......................................................................... 39 CKE/DQM Input Timing (Read Cycle) ......................................................................... 40 54L TSOP II - 400 mil ................................................................................................... 41
TIMING WAVEFORMS ............................................................................................................. 17
OPERATING TIMING EXAMPLE ............................................................................................. 21
PACKAGE SPECIFICATION .................................................................................................... 41 REVISION HISTORY ................................................................................................................ 42
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1. GENERAL DESCRIPTION
W 9825G6JH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words 4 banks 16 bits. W 9825G6JH delivers a data bandwidth of up to 200M words per second (-5). To fully comply with the personal computer industrial standard, W 9825G6JH is sorted into the following speed grades: -5, -6, -6I, -6A, -6L, -75 and 75L. The -5 grade parts is compliant to the 200MHz/CL3 specification. The -6 grade parts is compliant to the 166MHz/CL3 or 133MHz/CL2 specification. The -6I/-6A/-6L grade parts are compliant to the 166MHz/CL3 specification (the -6I industrial grade, -6A automotive grade which is guaranteed to support -40°C ~ 85°C). The -75/75L is compliant to the 133MHz/CL3 specification. The -6L and 75L parts support self refresh current IDD6 max. 1.5 mA. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full pa ge when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W 9825G6JH is ideal for main memory in high performance applications.
2. FEATURES
3.3V 0.3V Power Supply Up to 200 MHz Clock Frequency 4,194,304 Words 4 Banks 16 Bits Organization Self Refresh Mode: Standard and Low Power CAS Latency: 2 and 3 Burst Length: 1, 2, 4, 8 and Full Page Burst Read, Single Writes Mode Byte Data Controlled by LDQM, UDQM Power Down Mode Auto-precharge and Controlled Precharge 8K Refresh Cycles/64 mS Interface: LVTTL Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant
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3. AVAILABLE PART NUMBER
PART NUMBER W 9825G6JH-5 W 9825G6JH-6 W 9825G6JH-6I W 9825G6JH-6A W 9825G6JH-6L W 9825G6JH-75 W 9825G6JH75L SPEED GRADE 200MHz/CL3 166MHz/CL3 or 133MHz/CL2 166MHz/CL3 166MHz/CL3 166MHz/CL3 133MHz/CL3 133MHz/CL3 SELF REFRESH CURRENT (MAX) OPERATING TEMPERATURE 2mA 2mA 2mA 2mA 1.5mA 1mA 1.5mA 0°C ~ 70°C 0°C ~ 70°C -40°C ~ 85°C -40°C ~ 85°C 0°C ~ 70°C 0°C ~ 70°C 0°C ~ 70°C
4. PIN CONFIGURATION
VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM WE CAS RAS CS BS0 BS1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS NC UDQM CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS
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5. PIN DESCRIPTION
PIN NUMBER PIN NAME FUNCTION DESCRIPTION
2326, 22, 2936 20, 21
A0A12 BS0, BS1
Address Bank Select
Multiplexed pins for row and column address. Row address: A0A12. Column address: A0A8. Select bank to activate during row address latch time, or bank to read/write during address latch time.
2, 4, 5, 7, 8, 10, 11, 13, 42, 44, DQ0DQ15 45, 47, 48, 50, 51, 53 19
CS
Data Multiplexed pins for data output and input. Input/Output Disable or enable the command decoder. When command decoder is disabled, new command is ignored and previous operation continues.
Chip Select
18
RAS
Command input. When sampled at the rising edge of Row Address the clock, RAS , CAS and WE define the operation Strobe to be executed. Column Address Strobe Referred to RAS
17 16
CAS
WE
LDQM, UDQM
W rite Enable Referred to RAS The output buffer is placed at Hi-Z(with latency of 2) Input/Output when DQM is sampled high in read cycle. In write Mask cycle, sampling DQM high will block the write operation with zero latency. Clock Inputs System clock used to sample inputs on the rising edge of clock.
15, 39
38
CLK
37 1, 14, 27 28, 41, 54 3, 9, 43, 49 6, 12, 46, 52 40
CKE VDD VSS VDDQ VSSQ NC
CKE controls the clock activation and deactivation. Clock Enable W hen CKE is low, Power Down mode, Suspend mode, or Self Refresh mode is entered. Power (+3.3V) Power for input buffers and logic circuit inside DRAM. Ground Ground for input buffers and logic circuit inside DRAM. Power (+3.3V) Separated power from VDD, to improve DQ noise for I/O Buffer immunity. Ground Separated ground from VSS, to improve DQ noise for I/O Buffer immunity. No Connection No connection.
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6. BLOCK DIAGRAM
CLK CLOCK BUFFER CKE
CS RAS COMMAND CAS DECODER
CONTROL SIGNAL GENERATOR
COLUMN DECODER WE
COLUMN DECODER
ROW DECODER
ROW DECODER
CELL ARRAY BANK #0
CELL ARRAY BANK #1
A10
A0 A9 A11 A12 BS0 BS1 ADDRESS BUFFER
MODE REGISTER
SENSE AMPLIFIER
SENSE AMPLIFIER
DATA CONTROL CIRCUIT
DQ BUFFER
DQ0 DQ15 LDQM UDQM
REFRESH COUNTER
COLUMN COUNTER
COLUMN DECODER
COLUMN DECODER
ROW DECODER
CELL ARRAY BANK #2
ROW DECODER
CELL ARRAY BANK #3
SENSE AMPLIFIER
SENSE AMPLIFIER
Note: The cell array configuration is 8192 * 512 * 16.
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7. FUNCTIONAL DESCRIPTION
7.1 Power Up and Initialization
The default power up state of the mode register is unspecified. The following power up and initialization sequence need to be followed to guarantee the device being preconditioned to each user specific needs. During power up, all VDD and VDDQ pins must be ramp up simultaneously to the specified voltage when the input signals are held in the "NOP" state. The power up voltage must not exceed V DD + 0.3V on any of the input pins or VDD supplies. After power up, an initial pause of 200 µS is required followed by a precharge of all banks using the precharge command. To prevent data contention on the DQ bus during power up, it is required that the DQM and CKE pins be held high during the initial pause period. Once all banks have been precharged, the Mode Register Set Command must be issued to initialize the Mode Register. An additional eight Auto Refresh cycles (CBR) are also required before or after programming the Mode Register to ensure proper subsequent operation.
7.2
Programming Mode Register
After initial power up, the Mode Register Set Command must be issued for proper device operation. All banks must be in a precharged state and CKE must be high a t least one cycle before the Mode Register Set Command can be issued. The Mode Register Set Command is activated by the low signals of RAS , CAS , CS and WE at the positive edge of the clock. The address input data during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A new command may be issued following the mode register set command once a delay equal to t RSC has elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table.
7.3
Bank Activate Command
The Bank Activate command must be applied before any Read or Write operation can be executed. The operation is similar to RAS activate in EDO DRAM. The delay from when the Bank Activate command is applied to when the first read or write operation can begin must not be less than the RAS to CAS delay time (tRCD). Once a bank has been activated it must be precharged before another Bank Activate command can be issued to the same bank. The minimum time interval between successive Bank Activate commands to the same bank is determined by the RAS cycle time of the device (t RC). The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice versa) is the Bank to Bank delay time (tRRD). The maximum time that each bank can be held active is specified as tRAS (max).
7.4
Read and Write Access Modes
After a bank has been activated , a read or write cycle can be followed. This is accomplished by setting RAS high and CAS low at the clock rising edge after minimum of t RCD delay. WE pin voltage level defines whether the access cycle is a read operation ( WE high), or a write operation ( WE low). The address inputs determine the starting column address. Reading or writing to a different row within an activated bank requires the bank be precharged and a new Bank Activate command be issued. When more than one bank is activ ated, interleaved bank Read or Write operations are possible. By using the programmed burst length and alternating the access and precharge operations between multiple banks, seamless data access operation among many different pages can be realized. Read or Write Commands can also be issued to the same bank or between active banks on every clock cycle. Publication Release Date: Nov. 29, 2011 Revision A04
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7.5 Burst Read Command
The Burst Read command is initiated by applying logic low level to CS and CAS while holding
RAS and WE high at the rising edge of the clock. The address inputs determine the starting column address for the burst. The Mode Register sets type of burst (sequential or interleave) and the burst length (1, 2, 4, 8 and full page) during the Mode Register Set Up cycle. Table 2 and 3 in the next page explain the address sequence of interleave mode and sequential mode.
7.6
Burst Write Command
The Burst Write command is initiated by applying logic low level to CS , CAS and WE while holding RAS high at the rising edge of the clock. The address inputs determine the starting column address. Data for the first burst write cycle must be applied on the DQ pins o n the same clock cycle that the Write Command is issued. The remaining data inputs must be supplied on each subsequent rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes will be ignored.
7.7
Read Interrupted by a Read
A Burst Read may be interrupted by another Read Command. When the previous burst is interrupted, the remaining addresses are overridden by the new read address with the full burst length. The data from the first Read Command continues to appear on the outputs until the CAS Latency from the interrupting Read Command the is satisfied.
7.8
Read Interrupted by a Write
To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM masking is no longer needed.
7.9
Write Interrupted by a Write
A burst write may be interrupted before completion of the burst by another Write Command. When the previous burst is interrupted, the remaining addresses are overridden by the new address and data will be written into the device until the programmed burst length is satisfied.
7.10 Write Interrupted by a Read
A Read Command will interrupt a burst write operation on the same clock cycle that the Read Command is activated. The DQs must be in the high impedance state at least one cycle before the new read data appears on the outputs to avoid data contention. When the Read Command is activated, any residual data from the burst write cycle will be ignored.
7.11 Burst Stop Command
A Burst Stop Command may be used to terminate the existing burst operation but leave the bank open for future Read or Write Commands to the same page of the active bank. The Burst Stop Command is defined by having RAS and CAS high with CS and WE low at the rising edge of the clock. The data DQs go to a high impedance state after a delay which is equal to the CAS Latency in a burst read cycle interrupted by Burst Stop. Publication Release Date: Nov. 29, 2011 Revision A04
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7.12 Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address which is input to the device. The disturb address is varied by the Burst Length as shown in Table 2 . Table 2 Address Sequence of Sequential Mode
DATA ACCESS ADDRESS BURST LENGTH
Data 0 Data 1 Data 2 Data 3 Data 4 Data 5 Data 6 Data 7
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
BL = 2 (disturb address is A0) No address carry from A0 to A1 BL = 4 (disturb addresses are A0 and A1) No address carry from A1 to A2 BL = 8 (disturb addresses are A0, A1 and A2) No address carry from A2 to A3
7.13 Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit in the sequence shown in Table 3. Table 3 Address Sequence of Interleave Mode
DATA ACCESS ADDRESS BURST LENGTH
Data 0 Data 1 Data 2 Data 3 Data 4 Data 5 Data 6 Data 7
A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0
BL = 2
BL = 4
BL = 8
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7.14 Auto-precharge Command
If A10 is set to high when the Read or Write Command is issued, then the Auto -precharge function is entered. During Auto-precharge, a Read Command will execute as normal with the exception that the active bank will begin to precharge automatically before all burst read cycles have been completed. Regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled burst cycle. The number of clocks is determined by CAS Latency. A Read or Write Command with Auto-precharge can not be interrupted before the entire burst operation is completed. Therefore, use of a Read, Write, or Precharge Command is prohibited during a read or write cycle with Auto-precharge. Once the precharge operation has started, the bank cannot be reactivated until the Precharge time (tRP) has been satisfied. Issue of Auto-pecharge command is illegal if the burst is set to full page length. If A10 is high when a Write Command is issued, the Write with Auto-pecharge function is initiated. The SDRAM automatically enters the precharge operation two clock delay from the last burst write cycle. This delay is referred to as Write t WR. The bank undergoing Auto-precharge can not be reactivated until tWR and tRP are satisfied. This is referred to as tDAL, Data-in to Active delay (tDAL = tWR + tRP). When using the Auto-precharge Command, the interval between the Bank Activate Command and the beginning of the internal precharge operation must satisfy t RAS (min).
7.15 Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is entered when CS , RAS and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can be used to precharge each bank separately or all banks simultaneously. Three address bits A10, BS0 and BS1 are used to define which bank(s) is to be precharged when the command is issued. After the Precharge Command is issued, the precharged bank must be reactivated before a new read or write access can be executed. The delay between the Precharge Command and the Activate Command must be greater than or equal to the Precharge time (tRP).
7.16 Self Refresh Command
The Self Refresh Command is defined by having CS , RAS , CAS and CKE held low with WE high at the rising edge of the clock. All banks must be idle prior to issuing the Self Refresh Command. Once the command is registered, CKE m ust be held low to keep the device in Self Refresh mode. W hen the SDRAM has entered Self Refresh mode all of the external control signals, except CKE, are disabled. The clock is internally disabled during Self Refresh Operation to save power. The device wi ll exit Self Refresh operation after CKE is returned high. Any subsequent commands can be issued after tXSR from the end of Self Refresh Command. If, during normal operation, AUTO REFRESH cycles are issued in bursts (as opposed to being evenly distributed), a burst of 8,192 AUTO REFRESH cycles should be completed just prior to entering and just after exiting the self refresh mode.
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7.17 Power Down Mode
The Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are gated off to reduce the power. The Power Down mode does not perform any refresh operations, therefore the device can not remain in Power Down mode longer than t he Refresh period (tREF) of the device. The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation Command is required on the next rising clock edge, depending on t CK. The input buffers need to be enabled with CKE held high for a period equal to tCKS (min) + tCK (min).
7.18 No Operation Command
The No Operation Command should be used in cases when the SDRAM is in a idle or a wait state to prevent the SDRAM from registering any unwanted commands between operations. A No Operation Command is registered when CS is low with RAS , CAS and WE held high at the rising edge of the clock. A No Operation Command will not terminate a previous operation that is still exec uting, such as a burst read or write cycle.
7.19 Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect Command occurs when CS is brought high, the RAS , CAS and WE signals become don't cares.
7.20 Clock Suspend Mode
During normal access mode, CKE must be held high enabling the clock. When CKE is registered low while at least one of the banks is active, Clock Suspend Mode is entered. The Clock Su spend mode deactivates the internal clock and suspends any clocked operation that was currently being executed. There is a one clock delay between the registration of CKE low and the time at which the SDRAM operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are issued. The Clock Suspend mode is exited by bringing CKE high. There is a one clock cycle delay from when CKE returns high to when Clock Suspend mode is exited.
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8. OPERATION MODE
Fully synchronous operations are performed to latch the commands at the positive edges of CLK. Table 1 shows the truth table for the operation commands. Table 1 Truth Table (Note (1) , (2))
COMMAND Bank Active Bank Precharge Precharge All Write Write with Autoprecharge Read Read with Autoprecharge Mode Register Set No-operation Burst Stop Device Deselect Auto-refresh Self-refresh Entry Self-refresh Exit Clock Suspend Mode Entry Power Down Mode Entry Clock Suspend Mode Exit Power Down Mode Exit Data Write/Output Enable Data Write/Output Disable
Notes: (1) v = valid x = Don't care L = Low Level H = High Level (2) CKEn signal is input level when commands are provided. CKEn-1 signal is the input level one clock cycle before the command is issued. (3) These are state of bank designated by BS0, BS1 signals. (4) Device state is full page burst operation. (5) Power Down Mode can not be entered in the burst cycle. When this command asserts in the burst cycle, device state is clock suspend mode.
DEICE STATE Idle Any Any Active (3) Active (3) Active
(3)
CKEn-1 CKEn H H H H H H H H H H H H H L L H H H L L L H H x x x x x x x x x x x H L H H L L L H H H x x
DQM x x x x x x x x x x x x x x x x x x x x x L H
BS0, 1 v v x v v v v v x x x x x x x x x x x x x x x
A10 v L H L H L H v x x x x x x x x x x x x x x x
A0A9 A11, A12 v x x v v v v v x x x x x x x x x x x x x x x
CS
R AS
C AS
WE
L L L L L L L L L L H L L H L x H L x H L x x
L L L H H H H L H H x L L x H x x H x x H x x
H H H L L L L L H H x L L x H x x H x x H x x
H L L L L H H L H L x H H x x x x x x x x x x
Active (3) Idle Any Active (4) Any Idle Idle Idle (S.R.) Active Idle Active (5) Active Any
(Power Down)
Active Active
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9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER SYMBOL RATING UNIT NOTES
Voltage on any pin relative to VSS Voltage on VDD/VDDQ supply relative to VSS Operating Temperature (-5/-6/-6L/-75/75L) Operating Temperature (-6I/-6A) Storage Temperature Soldering Temperature (10s) Power Dissipation Short Circuit Output Current
VIN, VOUT VDD, VDDQ TOPR TOPR TSTG TSOLDER PD IOUT
-0.5 ~ VDD + 0.5 ( 4.6V max.) -0.5 ~ 4.6 0 ~ 70 -40 ~ 85 -55 ~ 150 260 1 50
V V °C °C °C °C W mA
1 1 1 1 1 1 1 1
Note 1: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.
9.2
Recommended DC Operating Conditions
PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTES
(TA = 0 to 70°C for -5/-6/-6L/-75/75L, TA = -40 to 85°C for -6I/-6A)
Supply Voltage Supply Voltage (for I/O Buffer) Input High Voltage Input Low Voltage
VDD VDDQ VIH VIL
3.0 3.0 2.0 -0.3
3.3 3.3 -
3.6 3.6 VDD + 0.3 0.8
V V V V
2 2 2 2
Note 2: VIH(max) = VDD/VDDQ+1.5V for pulse width < 5 nS VIL(min) = VSS/VSSQ-1.5V for pulse width < 5 nS
9.3
Capacitance
PARAMETER SYMBOL MIN. MAX. UNIT
(VDD = 3.3V 0.3V, f = 1 MHz, TA = 25°C)
Input Capacitance (A0 to A12, BS0, BS1, CS , RAS , CAS , WE , LDQM, UDQM, CKE) Input Capacitance (CLK) Input/Output Capacitance
Note: These parameters are periodically sampled and not 100% tested.
CI CCLK CIO
-
3.8 3.5 6.5
pf pf pf
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9.4 DC Characteristics
-5 MAX. -6/-6I/-6A MAX. -6L MAX. -75 MAX. 75L MAX.
(VDD = 3.3V 0.3V, TA = 0 to 70°C for -5/-6/-6L/-75/75L, TA = -40 to 85°C for -6I/-6A)
PARAMETER
Operating Current
SYM.
UNIT
NOTES
tCK = min., tRC = min.
Active precharge command cycling without burst operation Standby Current tCK = min., C S = VIH VIH/L = VIH (min.)/VIL (max.) Bank: Inactive state Standby Current CLK = VIL, C S = VIH VIH/L=VIH (min.)/VIL (max.) Bank: Inactive state No Operating Current
1 Bank operation
IDD1
65
60
60
55
55
3
CKE = VIH CKE = VIL
(Power Down Mode)
IDD2
30
25
25
20
20
3
IDD2P
2
2
2
2
2
3
CKE = VIH CKE = VIL
(Power Down Mode)
IDD2S
12
12
12
12
12
IDD2PS IDD3 IDD3P
2 40 12
2 35 12
2 35 12
2 30 12
2 mA 30 12
tCK = min., CS = VIH(min)
Bank: Active state (4 Banks) Burst Operating Current
CKE = VIH CKE = VIL
(Power Down Mode)
tCK = min.
Read/ Write command cycling Auto Refresh Current
IDD4
85
80
80
75
75
3, 4
tCK = min.
Auto refresh command cycling Self Refresh Current Self Refresh Mode CKE = 0.2V
IDD5
80
75
75
70
70
3
IDD6
2
2
1.5
2
1.5
PARAMETER
Input Leakage Current
(0V VIN VDD, all other pins not under test = 0V)
SYMBOL
II(L) IO(L) VOH VOL
MIN.
-5 -5 2.4 -
MAX.
5 5 0.4
UNIT
µA µA V V
NOTES
Output Leakage Current
(Output disable, 0V VOUT VDDQ)
LVTTL Output “H” Level Voltage
(IOUT = -2 mA )
LVTTL Output “L” Level Voltage
(IOUT = 2 mA )
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9.5 AC Characteristics and Operating Condition
0.3V, TA = 0 to 70°C for -5/-6/-6L/-75/75L, TA = -40 to 85°C for -6I/-6A)
SYM. MIN. Ref/Active to Ref/Active Command Period Active to precharge Command Period Active to Read/Write Command Delay Time Read/Write(a) to Read/Write(b) Command Period Precharge to Active Command Period Active(a) to Active(b) Command Period Write Recovery Time CL* = 2 CL* = 3 CL* = 2 CLK Cycle Time CLK High Level width CLK Low Level width CL* = 2 Access Time from CLK Output Data Hold Time Output Data High Impedance Time CL* = 2 CL* = 3 CL* = 3 tAC tOH tHZ tLZ tSB tT tDS tDH tAS tAH tCKS tCKH tCMS tCMH tREF tRSC tXSR 2 70 1.5 1.0 1.5 1.0 1.5 1.0 1.5 1.0 64 2 72 0 0 6 1 1.5 0.8 1.5 0.8 1.5 0.8 1.5 0.8 64 2 72 3 5.4 5 0 0 7 1 1.5 0.8 1.5 0.8 1.5 0.8 1.5 0.8 64 2 75 CL* = 3 tCK tCH tCL tRC tRAS tRCD tCCD tRP tRRD tWR 55 40 15 1 15 2 2 2 10 5 2 2 6 5 3 5.4 5.4 0 0 7 1 1.5 1.0 1.5 1.0 1.5 1.0 1.5 1.0 64 mS tCK nS 1000 1000 100000 -5 M AX. MIN. 60 42 15 1 15 2 2 2 7.5 6 2 2 6 5 3 5.4 5.4 0 0 7.5 1 8 8 8 8 8 8 8 8 nS 1000 1000 100000 -6 M AX. -6I/-6A/-6L MIN. 60 42 18 1 18 2 2 2 10 6 2 2 6 5 3 6 5.4 1000 1000 100000 M AX. -75/75L MIN. M AX. 65 45 20 1 20 2 2 2 10 7.5 2.5 2.5 6 5.4 9 9 7 7 9 1000 1000 8 8 tCK nS tCK tCK 100000 nS UNIT NOTES
(VDD = 3.3V
PARAMETER
Output Data Low Impedance Time Power Down Mode Entry Time Transition Time of CLK (Rise and Fall) Data-in Set-up Time Data-in Hold Time Address Set-up Time Address Hold Time CKE Set-up Time CKE Hold Time Command Set-up Time Command Hold Time Refresh Time Mode register Set Cycle Time Exit self refresh to ACTIVE command *CL = CAS Latency
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Notes: 1. Operation exceeds “Absolute Maximum Ratings” may cause permanent damage to the devices. 2. All voltages are referenced to VSS. 3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of tCK and tRC. 4. These parameters depend on the output loading conditions. Specified values are obtained with output open. 5. Power up sequence please refer to “Functional Description” section described before. 6. AC test load diagram.
1.4 V
50 ohms
output
Z = 50 ohms 30pF
AC TEST LOAD
7. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to output level. 8. Assumed input rise and fall time (tT) = 1nS. If tr & tf is longer than 1nS, transient time compensation should be considered, i.e., [(tr + tf)/2-1]nS should be added to the parameter. 9. If clock rising time (tT) is longer than 1nS, (tT/2-0.5)nS should be added to the parameter.
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10. TIMING WAVEFORMS
10.1 Command Input Timing
tCK VIH
tCL
tCH
CLK
VIL tT tCMS tCMH
tCMH
tT tCMS
CS
tCMS
tCMH
RAS
tCMS
tCMH
CAS
tCMS tCMH
WE
tAS tAH
A0-A12 BS0,1
tCKS tCKH tCKS tCKH tCKS tCKH
CKE
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10.2 Read Timing
Read CAS Latency
CLK
CS
RAS
CAS
WE
A0-A12 BS0,1
tAC tLZ tAC tOH Valid Data-Out Read Command tHZ tOH Valid Data-Out Burst Length
DQ
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10.3 Control Timing of Input/Output Data
Control Timing of Input Data
(Word Mask)
CLK
tCMH tCMS tCMH tCMS
DQM
tDS tDH Valid Data-in tDS tDH Valid Data-in tDS tDH Valid Data-in tDS tDH Valid Data-in
DQ0~15
(Clock Mask)
CLK
tCKH tCKS tCKH tCKS
CKE
tDS tDH Valid Data-in tDS tDH Valid Data-in tDS tDH Valid Data-in tDS tDH Valid Data-in
DQ0~15
Control Timing of Output Data
(Output Enable)
CLK
tCMH tCMS tCMH tCMS
DQM
tAC tOH tAC tOH Valid Data-Out tHZ tOH Valid Data-Out tAC tLZ tOH Valid Data-Out tAC
DQ0~15
OPEN
(Clock Mask)
CLK
tCKH tCKS tCKH tCKS
CKE
tAC tOH tOH Valid Data-Out Valid Data-Out tAC tOH tAC tOH Valid Data-Out tAC
DQ0~15
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10.4 Mode Register Set Cycle
tRSC
CLK
tCMS tCMH
CS
tCMS tCMH
RAS
tCMS tCMH
CAS
tCMS tCMH
WE
tAS tAH
A0-A12 BS0,1
Register set data
next command
A0 A1 A2 A3 A4 A5 A6 A0 7 A8 A9 A10 A0 A11 A12 BS0 BS1 "0 " "0 " "0 " "0 " "0 " Reserved "0 " "0 " (Test Mode) Reserved Write Mode A0 A6 0 0 0 0 1 CAS Latency Addressing Mode Burst Length A2 0 0 0 0 1 1 1 1 A1 A0 A0 A0 0 0 A0 1 0 A0 0 1 A0 1 1 A0 0 0 A0 1 0 A0 0 1 A0 1 1 A0 3 0 1 A5 A4 A0 A0 0 0 A0 1 0 A0 0 1 A0 1 1 A0 0 0 A0 9 0 1 Burst Length Sequential Interleave 1 1 2 2 4 4 8 8 Reserved Full Page Addressing Mode Sequential Interleave CAS Latency Reserved Reserved 2 3 Reserved Single Write Mode Burst read and Burst write Burst read and single write Reserved
* "Reserved" should stay "0" during MRS cycle.
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11. OPERATING TIMING EXAMPLE
11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
CS
tRC tRC tRC tRC tRAS tRP tRAS tRP
RAS
tRAS tRP tRAS
CAS
WE BS0 BS1
tRCD tRCD
RBb RAc
tRCD
RBd
tRCD
RAe
A10
RAa
A0-A9, A11,A12 DQM CKE
RAa
CAw
RBb
CBx
RAc
CAy
RBd
CBz
RAe
tAC
tAC
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3
tAC
cy0 cy1 cy2 cy3
tAC
DQ
tRRD
tRRD
tRRD
tRRD
Bank #0 Bank #1 Bank #2
Active
Read Active
Precharge Read
Active
Read Precharge Active
Precharge Read
Active
Idle Bank #3
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11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK CS
tRC tRC tRC tRC tRAS tRP tRP
RAS
tRAS tRAS tRP
CAS
WE BS0 BS1
tRCD tRCD
RBb RAc
tRCD
RBd
tRCD
RAe
A10
RAa
A0-A9, A11,A12 DQM CKE
RAa
CAw RBb
CBx
RAc
CAy
RBd
CBz
RAe
tAC
tAC
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3
tAC
cy0 cy1 cy2 cy3
tAC
dz0
DQ
tRRD
tRRD
tRRD
tRRD
Bank #0 Bank #1 Bank #2
Active
Read Active
AP* Read
Active AP*
Read Active
AP* Read
Active
Idle Bank #3 * AP is the internal precharge start timing
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11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
CS
tRC
RAS
tRAS tRP tRP tRAS
CAS
WE BS0
BS1
tRCD tRCD
RBb RAc
tRCD
A10
RAa
A0-A9, A11,A12 DQM CKE
RAa
CAx
RBb
CBy
RAc
CAz
tAC
tAC
ax0 ax1 ax2 ax3 ax4 ax5 ax6 by0 by1 by4 by5 by6
tAC
by7 CZ0
DQ
tRRD
tRRD
Bank #0 Bank #1 Bank #2
Active
Read Precharge Active Read
Precharge
Active
Read Precharge
Idle Bank #3
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11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto -precharge)
0 1 2 3 4 5 6 7
tRC
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK CS
RAS
tRAS tRP tRAS tRAS tRP
CAS
WE BS0 BS1
tRCD tRCD
RBb RAc
tRCD
A10
RAa
A0-A9, A11,A12 DQM
RAa
CAx
RBb
CBy
RAc
CAz
CKE
tAC tAC
ax0 ax1 ax2 ax3 ax4 ax5 ax6 ax7 by0 by1 by4 by5
tAC
by6 CZ0
DQ
tRRD
tRRD
Bank #0 Bank #1 Bank #2
Active
Read Active
AP* Read
Active
Read AP*
Idle Bank #3
* AP is the internal precharge start timing
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11.5 Interleaved Bank Write (Burst Length = 8)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK CS
tRC
RAS
tRAS tRP tRAS
CAS
tRCD tRCD tRCD
WE
BS0
BS1
A10
RAa
RBb
RAc
A0-A9, A11,A12 DQM CKE DQ
RAa
CAx
RBb
CBy
RAc
CAz
ax0
ax1
ax4
ax5
ax6
ax7
by0
by1
by2
by3
by4
by5
by6
by7
CZ0
CZ1
CZ2
tRRD
tRRD
Bank #0 Bank #1 Bank #2 Bank #3
Active
Write Active
Precharge Write
Active
Write Precharge
Idle
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11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK CS
tRC
RAS
tRAS tRP tRAS
CAS
WE
BS0
BS1
tRCD tRCD
RBb RAb
tRCD
A10
RAa
A0-A9, A11,A12
RAa
CAx
RBb
CBy
RAc
CAz
DQM CKE DQ
ax0 ax1 ax4 ax5 ax6 ax7 by0 by1 by2 by3 by4 by5 by6 by7 CZ0 CZ1 CZ2
tRRD
tRRD
Bank #0 Active Bank #1 Bank #2 Idle Bank #3
Write Active
AP* Write
Active
Write AP*
* AP is the internal precharge start timing
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11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
tCCD tCCD tCCD
CS
tRAS tRAS
RAS
CAS
WE BS0
BS1
tRCD tRCD
RBb
A10 A0-A9, A11,A12 DQM CKE
RAa
RAa
CAI
RBb
CBx
CAy
CAm
CBz
tAC
tAC
a0 a1 a2 a3 bx0
tAC
tAC tAC
Ay0 Ay1 Ay2 am0 am1 am2 bz0 bz1 bz2 bz3
DQ
tRRD
bx1
Bank #0 Bank #1 Bank #2
Active
Read Active Read
Read
Read Read
Precharge AP*
Idle Bank #3 * AP is the internal precharge start timing
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Publication Release Date: Nov. 29, 2011 Revision A04
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11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK CS
tRAS
RAS
CAS
WE
BS0
BS1
tRCD
A10
RAa
A0-A9, A11,A12
RAa
CAx
CAy
DQM CKE
tAC tWR
ax0 ax1 ax2 ax3 ax4 ax5 ay0 ay1 ay2 ay3 ay4
DQ
QQ
Q
Q
Q
Q
D
D
D
D
D
Bank #0 Bank #1 Bank #2 Bank #3
Active
Read
Write
Precharge
Idle
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Publication Release Date: Nov. 29, 2011 Revision A04
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11.9 Auto-precharge Read (Burst Length = 4, CAS Latency = 3)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
CS
tRC
RAS
tRAS tRP tRAS
CAS
WE BS0
BS1
tRCD tRCD
RAb
A10
RAa
A0-A9, A11,A12 DQM CKE
RAa
CAw
RAb
CAx
tAC
tAC
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3
DQ
Bank #0 Bank #1 Bank #2 Idle Bank #3
Active
Read
AP*
Active
Read
AP*
* AP is the internal precharge start timing
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11.10 Auto-precharge Write (Burst Length = 4)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC tRC
RAS
tRAS tRP tRAS tRP
CAS
WE BS0
BS1
tRCD tRCD
RAb RAc
A10 A0-A9, A11,A12 DQM CKE
RAa
RAa
CAw
RAb
CAx
RAc
DQ
aw0
aw1
aw2
aw3
bx0
bx1
bx2
bx3
Bank #0 Bank #1 Bank #2 Idle Bank #3
Active
Write
AP*
Active
Write
AP*
Active
* AP is the internal precharge start timing
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11.11 Auto Refresh Cycle
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
tRP tRC tRC
CS
RAS
CAS
WE
BS0,1
A10
A0-A9, A11,A12
DQM
CKE
DQ
All Banks Prechage
Auto Refresh
Auto Refresh (Arbitrary Cycle)
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11.12 Self Refresh Cycle
CLK
CS
tRP
RAS
CAS
WE
BS0,1
A10
A0-A9, A11,A12
DQM
CKE
tCKS
tSB
tCKS
DQ
tXSR
Self Refresh Cycle
No Operation / Command Inhibit
All Banks Precharge
Self Refresh Entry
Self Refresh Exit
Arbitrary Cycle
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11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
CS RAS
CAS
t RCD
WE
BS0
BS1
A10
RBa
A0-A9, A11,A12 DQM CKE
RBa
CBv
CBw
CBx
CBy
CBz
tAC
tAC
av0 Q av1 Q av2 Q av3 Q aw0 D ax0 D ay0 D az0 Q az1 Q az2 Q az3 Q
DQ
Bank #0 Bank #1 Bank #2
Active
Read
Single Write Read
Idle Bank #3
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11.14 Power Down Mode
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
RAS
CAS
WE
BS
A10
RAa
RAa
A0-A9, A11,A12
RAa
CAa
RAa
CAx
DQM
tSB tSB
CKE
tCKS tCKS
ax0 ax1 ax2
tCKS
ax3
tCKS
DQ
Active
NOP Read Active Standby Power Down mode
Precharge
NOP Active Precharge Standby Power Down mode
Note: The PowerDown Mode is entered by asserting CKE "low". All Input/Output buffers (except CKE buffers) are turned off in the Power Down mode. When CKE goes high, command input must be No operation at next CLK rising edge. Violating refresh requirements during power-down may result in a loss of data.
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Publication Release Date: Nov. 29, 2011 Revision A04
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11.15 Auto-precharge Timing (Read Cycle)
0
(1) CAS Latency =2
( a ) burst length = 1 Command
1
AP
2
3
Act
4
5
6
7
8
9
10
11
Read
tRP
DQ ( b ) burst length = 2 Command DQ ( c ) burst length = 4 Command DQ ( d ) burst length = 8 Command
Q0 Read AP
tRP
Act Q1 AP
tRP
Q0 Read Q0 Read Q0
Act Q3 AP
tRP
Q1
Q2
Act
DQ
Q1
Q2
Q3
Q4
Q5
Q6
Q7
(2) CAS Latency =3
( a ) burst length = 1 Command
Read
AP
tRP
Act Q0
DQ ( b ) burst length = 2 Command DQ ( c ) burst length = 4 Command DQ ( d ) burst length = 8 Command
Read
AP
tRP
Act Q0 Q1 AP
tRP
Read Q0 Read Q0
Act Q2 Q3 AP
tRP
Q1
Act Q6 Q7
DQ
Q1
Q2
Q3
Q4
Q5
Note: Read AP Act represents the Read with Auto precharge command. represents the start of internal precharging. represents the Bank Activate command.
When the Auto precharge command is asserted, the period from Bank Activate command to the start of internal precgarging must be at least RAS (min). t
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Publication Release Date: Nov. 29, 2011 Revision A04
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11.16 Auto-precharge Timing (Write Cycle)
0
1
2
3
4
5
6
7
8
9
10
11
12
CLK
(1) CAS Latency = 2
(a) burst length = 1 Command
Write
tWR
AP
tRP
Act
DQ
(b) burst length = 2 Command
D0 Write
tWR
AP
tRP
Act
DQ
(c) burst length = 4 Command
D0 Write
D1 AP
tWR tRP
Act
DQ
(d) burst length = 8 Command
D0 Write
D1
D2
D3 AP
tWR tRP
Act
DQ (2) CAS Latency = 3
(a) burst length = 1 Command
D0
D1
D2
D3
D4
D5
D6
D7
Write
tWR
AP
tRP
Act
DQ
(b) burst length = 2 Command
D0 Write
tWR
AP
tRP
Act
DQ
(c) burst length = 4 Command
D0 Write
D1 AP
tWR tRP
Act
DQ
(d) burst length = 8 Command
D0 Write
D1
D2
D3 AP
tWR tRP
Act Act
DQ
D0
D1
D2
D3
D4
D5
D6
D7
Note )
Write AP Act represents the Write with Auto precharge command. represents the start of internal precharing. represents the Bank Activ e command.
When the /auto precharge command is asserted,the period f rom Bank Activ ate command to the start of intermal precgarging must be at least tRAS (min).
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11.17 Timing Chart of Read to Write Cycle
In the case of Burst Length = 4
0
(1) CAS Latency =2
( a ) Command
1
Read
2
Write
3
4
5
6
7
8
9
10
11
DQM
DQ
D0 Read
D1 Write
D2
D3
( b ) Command
DQM
DQ
D0 Read Write D0 Read D1 Write
D1
D2
D3
(2) CAS Latency =3
( a ) Command DQM
DQ ( b ) Command DQM
D2
D3
DQ
D0
D1
D2
D3
Note: The Output data must be masked by DQM to avoid I/O conflict.
11.18 Timing Chart of Write to Read Cycle
In the case of Burst Length=4
0
(1) CA S Latenc y=2
( a ) C ommand D QM DQ
1
2
3
4
5
6
7
8
9
10
11
Write Read D0 Write D0 D1 Read Q0 Q1 Q2 Q3 Q0 Q1 Q2 Q3
( b ) C ommand D QM DQ
(2) CA S Latenc y=3
( a ) C ommand D QM DQ ( b ) C ommand D QM DQ
Write Read D0 Write D0 D1 Read Q0 Q1 Q2 Q3 Q0 Q1 Q2 Q3
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Publication Release Date: Nov. 29, 2011 Revision A04
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11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command)
0
(1) Read cycle ( a ) CAS latenc y =2
Command
1
2
3
4
5 BST
6
7
8
9
10
11
Read Q0 Read Q0 Q1 Q1 Q2
DQ
Q3 BST Q2
Q4
( b )CAS latenc y = 3
Command
DQ
Q3
Q4
(2) W rite cycle
Command
Write Q0 Q1 Q2 Q3 Q4
BST
DQ
Note:
BST
represents the Burst stop command
11.20 Timing Chart of Burst Stop Cycle (Precharge Command)
0
(1) Read cycle (a) CAS latency =2
Command DQ
1
2
3
4
5
6
7
8
9
10
11
Read Q0 Read Q0 Q1 Q1 Q2
PRCG Q3 PRCG Q2 Q3 Q4 Q4
(b) CAS latency =3
Command DQ
(2) Write cycle
Command DQM DQ
Write
tWR
PRCG
Q0
Q1
Q2
Q3
Q4
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11.21 CKE/DQM Input Timing (Write Cycle)
CLK cy cle No.
1
2
3
4
5
6
7
External CLK Internal CKE DQM DQ
D1
D2
D3
DQM MASK (1)
D5
CKE MASK
D6
CLK cy cle No.
1
2
3
4
5
6
7
External CLK Internal CKE DQM DQ
D1
D2
D3
DQM MASK (2)
D5
CKE MASK
D6
CLK cy cle No. External CLK Internal CKE DQM DQ
1
2
3
4
5
6
7
D1
D2
D3
CKE MASK (3)
D4
D5
D6
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Publication Release Date: Nov. 29, 2011 Revision A04
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11.22 CKE/DQM Input Timing (Read Cycle)
CLK cycle No.
1
2
3
4
5
6
7
External CLK Internal CKE DQM DQ
Q1
Q2
Q3
Q4
Open Open
Q6
(1 )
CLK cycle No.
1
2
3
4
5
6
7
External CLK Internal CKE DQM DQ
Q1
Q2
Q3
Q4
Open
Q6
(2 )
CLK cycle No.
1
2
3
4
5
6
7
External CLK Internal CKE DQM DQ
Q1
Q2
Q3
Q4
Q5
Q6
(3 )
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Publication Release Date: Nov. 29, 2011 Revision A04
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12. PACKAGE SPECIFICATION
12.1 54L TSOP II - 400 mil
E1
E
D
C
O
L L1
O1
O O
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13. REVISION HISTORY
VERSION DATE PAGE DESCRIPTION
A01 A02 A03 A04
Jun. 15, 2010 Oct. 25, 2010 Jul. 08, 2011 Nov. 29, 2011
All 15 3, 13~15 3, 4, 13~15
Initial formally data sheet Revise unit of tRP AC parameter from tCK to nS Added -6L and 75L two speed grades parts Added -6A automotive grade parts
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for other applications intended to support or sustain life. Further more, Winbond products are not intended for applications wherein failure of Winbond products could result or lead to a situation wherein personal injury, death or severe property or environmental damage could occur. Winbond customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Winbond for any damages resulting from such improper use or sales.
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Publication Release Date: Nov. 29, 2011 Revision A04
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