K2698B

K2698B K2698B Silicon N-Channel MOSFET Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Junction Temperature Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 500 18 12.7 80 ±30 330 27.7 4.5 208 150 -55~150 300 Units V A A A V mJ mJ V/ ns W ℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 0.60 40 Units ℃/W ℃/W Rev.A Aug.2010 Copyright@WinSemi Microelectronics Co., Ltd., All right reserved. K2698B K2698B Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Breakdown voltage Temperature coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, nC ID=18A (Note4,5) 12 14 tf toff VDD=400V, 42 55 Symbol IGSS V(BR)GSS IDSS V(BR)DSS △BVDSS/ △TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS=±25V,V DS=0V IG=±10 µA,VDS=0V VDS=500V,V GS=0V ID=10 mA,VGS=0V ID=250µA,Referenced to 25℃ VDS=10V,ID=1mA VGS=10V,ID=9A VDS=40V,ID=9A VDS=25V, VGS=0V, f=1MHz VDD=250V, ID=18A RG=25Ω (Note4,5) Min ±30 500 3 - Type 0.5 0.23 16 2530 11 300 40 150 95 110 Max ±10 100 5 0.27 3290 14.3 390 90 310 Unit nA V µA V V/℃ V Ω S pF ns 200 230 Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=18A,VGS=0V IDR=18A,VGS=0V, dIDR / dt =100 A / µs Min - Type 500 5.4 Max 18 72 1.4 - Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=5.2mH IAS=18A,VDD=50V,R G=25Ω,Starting TJ=25℃ 3.ISD≤18A,di/dt≤200A/us,VDD