SBN13003A1

SBN13003A1 High Voltage Fast-Switching NPN Power Transistor Features � � � Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed switching Characteristics required such as system,switching mode power supply. lighting Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter voltage Emitter -Base voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc*=25℃ Total Dissipation at Ta*=25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE=0 IB=0 IC=0 Value 700 400 9.0 1.5 3.0 0.75 Units V V V A A A A W tP=5ms 1.5 18 1.14 -40~150 -40~150 ℃ ℃ Tc :Case temperature(good cooling) Ta :Ambient temperature(without heat sink) Thermal Characteristics Symbol RQJA Parameter Thermal Resistance Junction to Ambient Value 13.6 Units ℃/W Rev.A Aug.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SBN13003A1 SBN13003A1 Electrical Characteristics(Tc=25℃ Symbol VCEO(sus) unless otherwise noted) Parameter Collector-Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Ic=0.5A,Ib=0.1A Value Min 400 Typ Max 0.5 1.0 3.0 1.0 1.2 1.0 5.0 20 Units V VCE(sat) Collector-Emitter Saturation Voltage Ic=1.0A,Ib=0.25A Ic=1.5A,Ib=0.5A V VBE(sat) Base -Emitter Saturation Voltage Collector-Base Cutoff Current (Vbe=-1.5V) DC Current Gain Resistive Load Ic=0.5A,Ib=0.1A Ic=1.0A,Ib=0.25A Vcb=700V Vcb=700V,Tc=100℃ Vce=2V,Ic=1A Vce=2V,Ic=1.0A V ICBO 8 3 - mA hFE ton ts tf Turn-on Time Storage Time Fall Time Inductive Load Storage Time Fall Time VCC=125V,Ic=1A IB1=0.2A,IB2=-0.5A Tp=25µs - 0.25 1.32 0.23 1.0 3.0 0.4 µs ts tf VCC=15V,Ic=1A IB1=0.2A,IB2=-0.5A L=0.35mH,Vclamp= 300V - 1.2 0.12 4.0 0.3 µs Inductive Load ts tf Storage Time Fall Time VCC=15V,Ic=1A IB1=0.2A,IB2=-0.5A L=0.35mH,Vclamp= 300V Tc=100℃ - 1.8 0.16 5.0 0.4 µs Note: Pulse Test : Pulse width 300,Duty cycle 2% 2 /5 Steady, keep you advance SBN13003A1 SBN13003A1 Fig.1 DC Current Gain Fig.2 Base -Emitter Saturation Voltage Fig.3 Collector -Emitter saturation Voltage Fig.4 Safe Operation Area Fig.5 Static Characteristics Fig.6 Power Derating 3 /5 Steady, keep you advance SBN13003A1 SBN13003A1 Resistive Load Switching Test Circuit Inductive Load Switching& RBSOA Test Circuit 4 /5 Steady, keep you advance SBN13003A1 SBN13003A1 To-92 Package Dimension Unit :mm 5 /5 Steady, keep you advance