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SBP3306

SBP3306

  • 厂商:

    WINSEMI

  • 封装:

  • 描述:

    SBP3306 - High Voltage Fast-Switching NPN Power Transistor - Shenzhen Winsemi Microelectronics Co., ...

  • 数据手册
  • 价格&库存
SBP3306 数据手册
SBP3306 High Voltage Fast-Switching NPN Power Transistor Features ■ ■ ■ Very high switching speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collect-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Total Dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature (Note) Test Conditions VBE=0 IB=0 IC=0 Value 950 400 12 4 8 70 150 -65~150 Units V V V A A W ℃ ℃ Thermal Characteristics Symbol RӨJC RӨJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.8 62.5 Units ℃/W ℃/W Rev.A02 Jun.2011 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SBP3306 Electrical Characteristics (T =25℃ unless otherwise noted) C Symbol ICBO ICEO BVCBO BVCEO BVEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 Parameter Collector Cut-off Current Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector -Emitter Saturation Voltage Collector -Emitter Saturation Voltage Base -Emitter saturation Voltage Test conditions VCB=950V, Ie=0A VCE=400V, IB=0A Value Min 950 400 12 35 35 25 - Typ 0.17 - Max 10 10 0.5 1.5 1.5 100 50 2 6 0.5 Units µA µA V V V V V V Ic=0.5mA Ic=5mA Ie=1mA Ic=1A,Ib=0.2A Ic=3.5A,Ib=1A Ic=3.5A,Ib=1A Vce=5V,Ic=0.1A hFE DC Current Gain Vce=5V,Ic=0.5A Vce=3V,Ic=0.8A tr tSTG tf Rise Time Storage Time Fall Time VCC=125V,IC=2A IB1=-IB2=-0.4A tP=300uS,VBE(OFF)=-5V µs µs µs - Note: Pulsed duration=380µs,Duty cycle≤2% 2/6 Steady, keep you advance SBP3306 Fig. 1 Static Characteristics Fig. 2 DC Current Gain Fig. 3 DC Current Gain Fig. 4Power Derating Fig. 5 Collector-Emitter Saturation Voltage Fig.6Base-Emitter Saturation Voltage 3/6 Steady, keep you advance SBP3306 Fig.7 Reverse Bias SOA Fig.8 Safe Operation Area 4/6 Steady, keep you advance SBP3306 Fig.9 Inductive Load Switching & RBSOA Test Circuit Fig.10 Inductive Load Switching &RBSOA Test Circuit 5/6 Steady, keep you advance SBP3306 To-220 Package Dimension Unit:mm 6/6 Steady, keep you advance
SBP3306 价格&库存

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