0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SBR13003D

SBR13003D

  • 厂商:

    WINSEMI

  • 封装:

  • 描述:

    SBR13003D - High Voltage Fast-Switching NPN Power Transistor - Shenzhen Winsemi Microelectronics Co....

  • 数据手册
  • 价格&库存
SBR13003D 数据手册
SBR13003D High Voltage Fast-Switching NPN Power Transistor Features ◆ ◆ ◆ ◆ Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9 .0 1 .5 3 .0 0 .7 5 1 .5 40 1 .2 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 3 .1 2 89 Units ℃/W ℃/W Jan 2009.Rev.0 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SBR13003D Electrical Characteristics (TC=25℃ unless otherwise noted) Value Parame ter Test Conditions Min 700 Typ Max Symbol Units BVCBO Collector-Base Breakdown Voltage Ic=0.5mA,Ie=0 V BVCEO Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 400 - - V VCE(sat) Collector-Emitter Saturation Voltage Ic=200mA,Ib=100mA - - 1.6 V VBE(sat) ICBO ICEO IEBO hFE Base-Emitter Saturation Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter- Base Cutoff Current DC Current Gain Ic=200mA,Ib=100mA Vcb=550V,Ie=0mA Vce=400V,Ib=0mA Veb=9V,Ic=0mA Vce=20V,Ic=20mA Vce=5V, Ic=1mA 10 9 - - 1.2 10 20 20 40 3 0 .8 V μA μA μA ts tf Storage Time Fall Time VCC=250V IC=5 IB IB1=- IB2=0.04A ㎲ Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 Steady, keep you advance . SBR13003D Fig. 1 DC Current Gain Fig. 2 Saturation Voltage Fig. 3 Switching Time Fig. 4 Safe Operation Area Fig.5 Power Derating 3/5 Steady, Steady, keep you advance SBR13003D Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 Steady, keep you advance . SBR13003D TO-126 Package Dimension 1 3 5/5 Steady, Steady, keep you advance
SBR13003D 价格&库存

很抱歉,暂时无法提供与“SBR13003D”相匹配的价格&库存,您可以联系我们找货

免费人工找货