SFF730

SFF730 Silicon N-Channel MOSFET Features ■5.5A,400V, RDS(on)(Max 1.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fas t Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Th i s Po w e r M O S F E T is pr o d u c e d us i n g W i n s e m i ’ s ad v a n c e d pl a n a r st r i p e , DM O S te c hn o l o g y . T h i s la t e s t te c hn o lo g y ha s b e e n es p e c i al l y de s i gn e d to min i mi z e on - s t a t e re s i st a n c e , h a v e a hi g h r ug g e d a v a la n c h e c h a ra c t er is t ic s . T h i s d e v i c e s i s s p e c i al l y w e l l suite d for high effic ien c y swi tc h mod el po we r supp li es , pow er fa cto r co rr e c t i o n an d h a l f b r i dg e an d fu l l b r i d g e re s ona n t to po l og y li n e a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM V GS EAS E AR d v /d t PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Diss ip ation (@ T c=2 5℃) (Note 2) (Note 1) (Note 3) (Note1) Drain Source Voltage Continuous Drain Current(@Tc=25℃) P a r a m e te r Value 400 5.5* 2.9* 22* ±30 330 7.4 4 38 0.3 -55~150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Channel Temperature *Drain current limited by maxim um junction temperature Thermal Characteristics Symbol R QJC R QJA P a r a m et e r Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Va lue Min - Typ - Max 3.3 62 Units ℃ /W ℃ /W Rev.A Dec.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SFF730 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain−source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate charge (gate−source Qg plus gate−drain) Gate−source charge Gate−drain (“miller ”) Charge Qgs Qgd V GS = 1 0 V , nC ID =5.5 A (Note4,5) 4.3 14 5.7 22 tf to f f VDD = 320 V, 32 38 ΔBVDSS/ Δ TJ VGS(th) RDS(ON) gf s C iss C rss C oss tr ton ID=250μA, 25℃ VDS = 10 V, ID =250 μA VGS = 10 V, ID = 2.75A VDS = 50 V, ID = 2.75A VDS = 25 V, V GS = 0 V , f = 1 MHz VDD =200 V, ID =5.5A RG=25Ω (Note4,5) 2 0.83 4. 5 550 23 85 15 55 85 50 4 1 720 30 110 40 120 ns 180 110 pF V Ω S Referenced to 0.4 V/℃ break down V(BR)DSS ID = 250 μA, VGS = 0 V 400 V Symbol IGSS V(BR)GSS IDSS Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 400 V, VGS = 0 V Min ± 30 - Ty p e - Max ± 10 0 1 Unit nA V μA Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 5.5 A, VGS = 0 V IDR = 5.5 A, VGS = 0 V, dIDR / dt = 100 A / μs Min - Type 1.4 265 2.32 Max 5. 5 22 1. 5 530 - Unit A A V ns μC Note 1.Repeativity rating :pulse width limited by junction tem p era tur e 2.L=18.5mH,IAS=5.5A,VDD =50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤5.5A,di/dt≤300A/us, VDD