SFP3710G

SFP3710G Silicon N-Channel MOSFET Features � � � � � 59A,100V,RDS(on)(Max 18mΩ)@VGS=10V Ultra-low Gate Charge(Typical 1180nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(175℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for switching regulators, switching convertors, motor and relay drivers , and drivers for high power bipolar switching transistor demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note2) (Note1) (Note3) (Note1) Parameter Value 100 59 42 240 ±20 170 7.4 5.8 136 1.3 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 0.92 62.5 Units ℃/W ℃/W ℃/W Rev.A Aug.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SFP3710G Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Break voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, nC ID=35A (Note4,5) 190 300 tf toff VDD=80V, 1180 - Symbol IGSS V(BR)GSS IDSS V(BR)DSS △BVDSS/ △TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS=±20V,VDS=0V IG=±10 µA,VDS=0V VDS=100V,VGS=0V ID=250 µA,VGS=0V ID=1mA, Referenced to Min ±30 100 - Type 0.1 35 2990 160 3000 18 86 47 60 Max ±100 20 4 18 - Unit nA V µA V V/℃ V mΩ S 25℃ VDS=10V,ID=250 µA VGS=10V,ID=35A VDS=50V,ID=35A VDS=25V, VGS=0V, f=1MHz VDD=28V, ID=75A， RG=6.8Ω， (Note4,5) 2 - pF ns - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IS=35A,VGS=0V IDR=75A,VDD=25V, dIDR / dt =100 A / µs Min - Type 56 106 Max 59 240 1.5 75 160 Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=50µH IAS=59A,VDD=50V,RG=25Ω ,Starting TJ=25℃ 3.ISD≤59A,di/dt≤300A/us,VDD