Wisdom Semiconductor
WFP75N08
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 0.015 Ω )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C)
Symbol
●
2. Drain
1. Gate
◀
● ●
▲
3. Source
General Description
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220
12
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
80 75 52.5 300
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±20
1310 17.3 7.0 173 1.15 - 55 ~ 175 300
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
0.5 -
Max.
0.87 62.5
Units
°C/W °C/W °C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.
WFP75N08
Electrical Characteristics
Symbol Off Characteristics
BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 80V, VGS = 0V VDS = 64V, TC = 125 °C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 37.5A 80 0.08 10 100 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
IGSS
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 0.012 4.0 0.015 V Ω
Dynamic Characteristics
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 2600 940 210 3380 1220 275 pF
Dynamic Characteristics
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =64V, VGS =10V, ID =75A
(Note 4, 5)
VDD =40V, ID =75A, RG =25Ω
(Note 4, 5)
30 225 165 155 80 15 32
70 460 340 320 105 nC ns
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr ※ NOTES
1. Repeativity rating : pulse width limited by junction temperature 2. L = 0.32mH, IAS =75A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature.
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET IS =75A, VGS =0V IS=75A, VGS=0V, dIF/dt=100A/us
Min.
-
Typ.
90 250
Max.
75 300 1.5 -
Unit.
A V ns uC
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Typical Characteristics
10
2
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
2
10
1
175℃
10
1
25℃
10
0
※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃
-55℃
※ Notes : 1. VDS = 30V 2. 250µ s Pulse Test
10 -1 10
0
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.06
RDS(on) [Ω], Drain-Source On-Resistance
0.04
VGS = 10V VGS = 20V
IDR, Reverse Drain Current [A]
0.05
10
2
10
1
0.03
0.02
10
0
0.01
※ Note : TJ = 25℃
175℃
25℃
※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test
0.00
0
70
140
210
280
350
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID , Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current
7000 6000 5000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VGS, Gate-Source Voltage [V]
10
VDS = 30V VDS = 48V
Capacitance [pF]
8
4000 3000 2000 1000 0 -1 10
Coss Ciss
※ Notes : 1. VGS = 0 V 2. f = 1 MHz
6
4
Crss
0 1
2
※ Note : ID = 75A
10
10
0
0
10
20
30
40
50
60
70
80
90
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Typical Characteristics
(Continued)
1.2
2.5
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
2.0
1.1
1.5
1.0
1.0
0.9
※ Notes : 1. VGS = 0 V 2. ID = 250 µA
0.5
※ Notes : 1. VGS = 10 V 2. ID = 37.5 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
80
10
3
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
10
2
100 µs 1 ms 10 ms DC
ID, Drain Current [A]
10 µs
60
40
10
1
10
0
※ Notes :
1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
20
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature [℃]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
10
0
Zθ JC Thermal Response (t),
D = 0 .5 0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1
※ N o te s : 1 . Z θ J C t) = 0 .8 7 ℃ /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C t) (
PDM t1
s in g le p u ls e
10
-2
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
Gate Charge Test Circuit & Waveform
5K 0Ω 1V 2 20F 0n 30F 0n
SmTp a e ye a DT sU V D S
VS G Q g 1V 0 Q g s Q g d
VS G
DT U
3A m
C re hg a
Resistive Switching Test Circuit & Waveforms
V D S R G V G S
R L V D D
V D S
9 0 %
1 0 V
D U T
V G S
1 0 %
to d) (n
t r tn o
to df (f ) tf o f
t f
Unclamped Inductive Switching Test Circuit & Waveforms
L V D S I D R G 1 0 V
tp
BS VS D 1 2 -----------E= - LS - - - - - - A -- I SA 2 B S- D VS V D D BS VS D IS A V D D I( t D) V D D
t p
D U T
V( Dt S) Te i m
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
• d v / d t c o n t r o lle d b y R G • I S D c o n t r o l l e d b y p u l s e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
Package Dimensions
TO-220
9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20
1.30 –0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 –0.05
+0.10
2.40 ±0.20
10.00 ±0.20