WFR630

Wisdom Semiconductor WFR630 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.4 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ● 2. Drain 1. Gate ◀ ● ● ▲ 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control. SOT-82 1 23 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 200 7.0 4.5 28 Units V A A A V mJ mJ V/ns W W/°C °C °C ±25 160 5.0 5.5 50 0.4 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Value Min. - Typ. - Max. 2.5 50 100 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) WFR630 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 200 ------0.20 ------1 10 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.5 A VDS = 40 V, ID = 3.5 A (Note 4) 2.0 --- -0.35 7.0 4.0 0.4 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---550 85 22 720 110 29 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 160 V, ID = 9 A, VGS = 10 V (Note 4, 5) VDD = 100 V, ID = 9 A, RG = 25 Ω (Note 4, 5) -------- 30 65 75 50 22 3.5 10.5 70 140 160 110 29 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 9 A, dIF / dt = 100 A/µs (Note 4) ------ ---150 0.68 7.0 28 1.5 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 4.9mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9A, di/dt ≤ 300µA/s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Typical Characteristics 10 1 ID, Drain Current [A] 10 0 ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 1 10 0 150℃ 25℃ -55℃ 10 -1 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test 10 -1 10 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.2 IDR, Reverse Drain Current [A] Drain-Source On-Resistance 0.9 10 1 VGS = 10V VGS = 20V 0.6 R DS(O N) [ Ω ], 10 0 0.3 150℃ 10 -1 ※ Note : TJ = 25℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0.0 0 4 8 12 16 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 1200 VGS, Gate-Source Voltage [V] 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VDS = 40V VDS = 100V VDS = 160V Capacitances [pF] 800 Ciss Coss Crss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 8 600 6 400 4 200 2 ※ Note : ID = 9A 0 -1 10 10 0 10 1 0 0 5 10 15 20 25 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics (Continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 ※ Notes : 1. VGS = 10 V 2. ID = 3.5 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature 8 Operation in This Area is Limited by R DS(on) Figure 8. On-Resistance Variation vs. Temperature 10 2 10 µs 100 µs 1 ms 6 ID, Drain Current [A] 10 1 ID, Drain Current [A] 10 ms 10 0 4 DC ※ Notes : 2 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Zθ JC Thermal Response (t), 10 0 D = 0 .5 0 .2 0 .1 0 .0 5 ※ N o te s : 1 . Z θ J C t) = 2 .5 0 ℃ /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C t) ( 10 -1 0 .0 2 0 .0 1 s in g le p u ls e PDM t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] Figure 11. Transient Thermal Response Curve Gate Charge Test Circuit & Waveform 5K 0Ω 1V 2 20F 0n 30F 0n Sm Tp a e ye a DT sU VS D VS G 1V 0 Q g s Q g VS G Q g d DT U 3A m Cag hr e Resistive Switching Test Circuit & Waveforms V D S R G V G S R L V D D V D S 9 0 % 1 0 V D U T V G S 1 0 % t(n d) o t r tn o t(f) df o tf o f t f Unclamped Inductive Switching Test Circuit & Waveforms L V D S I D R G 1 0 V tp BS VS D 1 -- I 2 ---------E =-- L S ---------A S A 2 B S -V VS D D D BS VS D IS A V D D I () t D V D D tp D U T V () Dt S Te i m Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v /d t c o n tr o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v /d t V SD V DD B o d y D io d e F o r w a r d V o lta g e D r o p SOT-82 Package Dimension Dim. A B b b1 C c1 D e e3 F H H2 I O V Min. 7.4 10.5 0.7 0.49 2.4 1.0 15.4 4.15 mm Typ. Max. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 4.65 Min. 0.291 0.413 0.395 0.019 0.094 0.039 0.606 0.163 Inch Typ. Max. 0.307 0.425 0.035 0.029 0.106 0.051 0.630 0.183 2.2 3.8 2.54 2.15 1.27 0.3 10 degree 0.086 0.149 0.100 0.084 0.05 0.012 10 degree