WFW10N80

PROVISIONAL Wisdom Semiconductor WFW10N80 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 1.05 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ● 2. Drain ◀ 1. Gate ▲ ● ● 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. TO-247 G DS Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 800 10 6.3 40 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 960 26 4.0 260 2.08 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min. - Typ. 0.24 - Max. 0.48 40 Units °C/W °C/W °C/W 1/2 Copyright@Wisdom Semiconductor Inc., All rights reserved. WFW10N80 Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 800V, VGS = 0V VDS = 640V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 800 1.0 10 100 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units IGSS On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance VDS = VGS, ID = 250uA VGS =10 V, ID = 5A 3.0 0.85 5.0 1.05 V Ω Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 2100 220 25 pF Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =640V, VGS =10V, ID =10A (Note 4, 5) VDD =400V, ID =10A, RG =25Ω (Note 4, 5) 50 120 130 80 55 15 25 nC ns - Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 18.0mH, IAS =10A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =10A, VGS =0V IS=10A, VGS=0V, dIF/dt=100A/us Min. - Typ. 800 10 Max. 10 40 1.4 - Unit. A V ns uC 2/2 Copyright@Wisdom Semiconductor Inc., All rights reserved.