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AG203-63

AG203-63

  • 厂商:

    WJCI

  • 封装:

  • 描述:

    AG203-63 - InGaP HBT Gain Block - WJ Communication. Inc.

  • 数据手册
  • 价格&库存
AG203-63 数据手册
AG203-63 InGaP HBT Gain Block The Communications Edge TM Product Information Product Features • • • • • • DC – 6000 MHz +8 dBm P1dB at 900 MHz +20 dBm OIP3 at 900 MHz 20 dB Gain at 900 MHz Single Voltage Supply Lead-free / RoHS-compliant / Green SOT-363 package • Internally matched to 50 Ω Product Description The AG203-63 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG203-63 typically provides 20 dB gain, +20 dBm OIP3, and +8 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 1000 years at mounting temperatures of +85 °C and is housed in a leadfree/green/RoHS-compliant SOT-363 industry standard SMT package. The AG203-63 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG203-63 will work for other various applications within the DC to 6 GHz frequency range such as CATV and WiMAX. Functional Diagram GND 1 6 RF OUT GND 2 5 GND RF IN 3 4 GND Function Input Output/Bias Ground Pin No. 3 6 1, 2, 4, 5 Applications • • • • • Mobile Infrastructure CATV / FTTX W-LAN / ISM RFID WiMAX / WiBro Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Output IP2 Noise Figure Test Frequency Gain Output P1dB Output IP3 (2) Device Voltage Device Current Typical Performance (1) Units MHz MHz dB dB dB dBm dBm dBm dB MHz dB dBm dBm V mA Min DC Typ 900 19.7 20 16 +8 +20.1 +24 3.0 1900 17.8 +7.4 +19.7 4.05 20 Max 6000 Parameter Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure Units MHz dB dB dB dBm dBm dB 500 20.3 -25 -16 +8.1 +20.2 2.9 Typical 900 19.7 -20 -16 +8.0 +20.1 3.0 1900 17.7 -18 -16 +7.4 +19.7 3.2 2140 17.3 -16 -16 +6.8 +19.5 3.2 16.8 18.8 1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Rbias = 47.5 Ω,, 50 Ω System. 2. 3OIP measured with two tones at an output power of -10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature -40 to +85 °C -55 to +125 °C +4.5 V +10 dBm +250 °C Rating Ordering Information Part No. AG203-63G AG203-63PCB . Specifications and information are subject to change without notice Description InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-363 Package) 700 – 2400 MHz Fully Assembled Eval. Board Operation of this device above any of these parameters may cause permanent damage. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 1 of 5 April 2006 AG203-63 InGaP HBT Gain Block Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 20.4 -25 -14 +8.2 +20.3 2.9 500 20.3 -25 -16 +8.1 +20.2 2.9 900 19.7 -20 -16 +8.0 +20.1 3.0 1900 17.7 -18 -16 +7.4 +19.7 3.2 2140 17.3 -16 -16 +6.8 +19.5 3.2 The Communications Edge TM Product Information Typical Device RF Performance Supply Bias = +5 V, Rbias = 47.5 Ω, Icc = 20 mA 2400 16.7 -16 -16 +6.8 +19.5 3.3 3500 14.9 -20 -20 +6.6 5800 11.5 -20 -14 1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Device Voltage = 4.05 V, Rbias = 47.5 Ω, Icc = 20 mA typical, 50 Ω System. 2. 3OIP measured with two tones at an output power of -10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency 22 20 Return Loss 0 -10 -20 -30 S11 S22 I-V Curve 40 Device Current (mA) 30 Optimal operating point 20 10 0 3.0 18 16 14 -40 C 12 0 1 2 Frequency (GHz) 3 4 +25 C +85 C S11, S22 (dB) G a in ( d B ) -40 0 1 2 3 4 5 6 3.5 4.0 4.5 Frequency (GHz) Output IP2 vs. Frequency Device Voltage (V) Output IP3 vs. Frequency Noise Figure vs. Frequency 25 20 15 10 -40 C +25 C +85 C 35 30 5 4 N F (d B ) -40c +25c +85c OIP3 (dBm) OIP2 (dBm) 3 2 1 -40 C +25 C +85 C 25 20 15 5 0 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) P1dB vs. Frequency Frequency (MHz) Output Power / Gain vs. Input Power 20 18 G a in ( d B ) 16 14 12 10 Output Power Gain frequency = 900 MHz Frequency (GHz) Output Power / Gain vs. Input Power 16 O u t p u t P ow e r ( d B m ) G a in ( d B ) 12 8 4 0 -4 18 16 14 12 10 Output Power 8 -20 -16 -12 -8 -4 Input Power (dBm) 0 4 -4 Gain frequency = 2000 MHz 10 5 0 -5 -40 C +25 C +85 C 16 O u t p u t P ow e r ( d B m ) 12 8 4 0 P1dB (dBm) -10 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) -20 -16 -12 -8 -4 Input Power (dBm) 0 4 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 2 of 5 April 2006 AG203-63 InGaP HBT Gain Block Gain vs. Frequency 22 20 18 16 14 -40 C 12 0 1 2 Frequency (GHz) 3 4 +25 C +85 C Output IP3 vs. Frequency The Communications Edge TM Product Information Typical Device RF Performance (cont’d) Supply Bias = +6 V, Rbias = 98 Ω, Icc = 20 mA Output IP2 vs. Frequency 25 20 15 10 -40 C +25 C +85 C 35 30 25 20 -40c +25c +85c OIP3 (dBm) 5 OIP2 (dBm) G a in ( d B ) 15 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 Frequency (GHz) P1dB vs. Frequency Frequency (MHz) Noise Figure vs. Frequency 10 5 5 4 N F (d B ) -40 C +25 C +85 C P1dB (dBm) 3 2 1 -40 C +25 C +85 C 0 -5 -10 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 0 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Typical Device RF Performance Supply Bias = +8 V, Rbias = 198 Ω, Icc = 20 mA Gain vs. Frequency 22 20 18 16 14 -40 C 12 0 1 2 Frequency (GHz) 3 4 +25 C +85 C Output IP3 vs. Frequency Output IP2 vs. Frequency 25 20 15 10 -40 C +25 C +85 C 35 30 25 20 -40c +25c +85c OIP3 (dBm) 5 OIP2 (dBm) G a in ( d B ) 15 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 Frequency (GHz) P1dB vs. Frequency Frequency (MHz) Noise Figure vs. Frequency 10 5 5 4 N F (d B ) -40 C +25 C +85 C P1dB (dBm) 3 2 1 -40 C +25 C +85 C 0 -5 -10 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 0 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 3 of 5 April 2006 AG203-63 InGaP HBT Gain Block Vcc Icc = 20 mA The Communications Edge TM Product Information Application Circuit R1 Bias Resistor C4 Bypass Capacitor C3 0.018 µF L1 RF Choke RF IN AG203-63 C1 Blocking Capacitor C2 Blocking Capacitor RF OUT Recommended Component Values Reference Designator 50 500 L1 820 nH 220 nH C1, C2, C4 .018 µF 1000 pF 2. 2. Frequency (MHz) 900 1900 2200 68 nH 27 nH 22 nH 100 pF 68 pF 68 pF Size 0603 0603 0603 0603 2500 18 nH 56 pF 3500 15 nH 39 pF The proper values for the components are dependent upon the intended frequency of operation. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. L1 C1, C2 C3 C4 R1 Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 μF chip capacitor Do Not Place 47.5 Ω 1% tolerance Recommended Bias Resistor Values S upply R1 value S ize Voltage 5V 47.5 ohms 0603 6V 98 ohms 0603 7V 148 ohms 0805 8V 198 ohms 0805 9V 248 ohms 1206 10 V 298 ohms 1210 12 V 398 ohms 1210 The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +5 V. A 1% tolerance resistor is recommended. Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000 S-Parameters (Vdevice = +4.05 V, ICC = 20 mA, T = 25 °C, calibrated to device leads) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) -25.17 2.44 20.58 177.54 -23.20 1.82 -14.17 -25.43 19.92 20.51 168.67 -23.93 4.61 -14.24 -26.52 51.29 20.37 157.36 -23.52 3.76 -16.44 -23.65 49.78 20.03 146.65 -23.46 5.05 -16.98 -22.07 40.71 19.64 136.55 -23.56 2.97 -17.77 -20.63 39.53 19.22 126.53 -23.03 6.36 -18.33 -19.78 35.18 18.75 117.55 -22.67 6.26 -18.95 -19.32 28.81 18.25 108.83 -22.55 8.11 -19.10 -18.82 22.65 17.69 100.49 -22.09 7.05 -19.08 -15.68 16.21 17.13 93.38 -21.84 7.56 -15.66 -16.33 9.66 16.75 88.14 -21.92 3.19 -16.65 -16.81 6.23 16.32 80.77 -21.04 4.47 -17.53 -17.51 4.58 15.86 74.01 -20.83 5.19 -19.10 -18.69 6.09 15.43 67.67 -20.59 5.81 -20.58 -19.88 9.58 15.01 61.27 -20.34 3.51 -22.15 -20.81 20.17 14.56 54.88 -19.86 1.07 -21.67 -21.48 40.62 14.14 48.38 -19.12 0.00 -19.12 -21.14 57.36 13.76 42.54 -19.02 -1.99 -16.77 -19.74 72.23 13.30 36.58 -18.70 -6.17 -14.99 -19.01 82.70 12.91 30.19 -18.67 -7.40 -14.02 -18.41 89.08 12.54 24.69 -18.26 -10.48 -13.28 -19.09 94.75 12.18 19.42 -18.05 -12.75 -13.13 -20.88 99.20 11.82 14.41 -17.84 -14.26 -13.43 -23.32 109.55 11.60 9.32 -17.44 -17.25 -14.24 -27.64 125.83 11.35 4.32 -17.10 -20.45 -14.82 Device S-parameters are available for download on the website at: http://www.wj.com Typical Device Data S22 (ang) -3.37 -8.75 -18.23 -30.04 -41.16 -55.53 -69.93 -85.56 -98.01 -96.28 -105.75 -113.94 -128.07 -142.56 -171.10 154.83 134.30 118.64 108.52 104.45 102.92 100.56 100.66 103.15 106.42 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 4 of 5 April 2006 AG203-63 InGaP HBT Gain Block The Communications Edge TM Product Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the leads is annealed matte tin over copper. AG203-63G (Green / Lead-free SOT-363 Package) Mechanical Information Outline Drawing Product Marking The component will be marked with an “H” designator followed by a two-digit numeric lot code on the top surface of the package. The obsolete tin-lead package is marked with a “C” designator followed by a two-digit numeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1C Passes ≥ 1000V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes ≥ 1000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 Land Pattern MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) M T vs. G DL T p re TF N ead em eratu 10000 -40 to +85 °C 472 °C / W 123 °C MTTF (million hrs) Rating 1000 100 10 1 60 1. The thermal resistance is referenced from the hottest part of the junction to the ground pin (pin 4). 2. This corresponds to the typical biasing condition of +4.05V, 20 mA at an 85 °C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 °C. 70 80 90 100 110 120 G u dL T p re(°C ro n ead em eratu ) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 5 of 5 April 2006
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