AH1-1G

AH1-1 High Dynamic Range Amplifier Product Features x x x x x x 250 – 4000 MHz +41 dBm OIP3 3 dB Noise Figure 13.5 dB Gain +21 dBm P1dB Lead-free/Green/RoHS-compliant SOT-89 Package x Single +5 V Supply x MTTF > 100 years Product Description The AH1-1 is a high dynamic range amplifier in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The AH1-1 is a specially screened version of the AH1 offering a very narrow gain spread from device to device. The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85qC. The AH1-1 is available in both the standard SOT-89 package and the environmentally-friendly lead-free/green/RoHS-compliant SOT-89 package. The broadband amplifier uses a high reliability GaAs MMIC technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AH1-1 will work for other applications within the 250 to 3 4000 MHz frequency range such as fixed wireless. Functional Diagram GND 4 1 RF IN 2 GND 3 RF OUT Applications x x x x x x Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Function Input Output/Bias Ground Pin No. 1 3 2, 4 Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure (3) Operating Current Range Supply Voltage Typical Performance (4) Units MHz MHz dB dB dB dBm dBm dB mA V Min 250 12.9 Typ 800 13.3 8 15 +21.7 +41 3 150 5 Max 4000 13.8 Parameter Frequency S21 S11 S22 Output P1dB Output IP3 (2) IS-95 Channel Power (5) Noise Figure Supply Voltage Device Current Units MHz dB dB dB dBm dBm dB dB V mA 900 14.2 -21 -14 +21.7 +42 +15.5 3.2 Typical 1900 12.2 -14 -13 +22 +41 +16.5 3.3 5 150 2140 12.0 -21 -11 +22 +40 3.3 +37 120 180 1. Test conditions unless otherwise noted: T = 25º C, 50 system. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Noise figure can be optimized by matching the input for optimal return loss. : 4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page 3. 5. Measured with -45 dBc ACPR, IS-95 9 channels fwd. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature Supply Voltage RF Input Power (continuous) Junction Temperature -40 to +85 qC -55 to +150 qC +6 V +10 dBm +220 qC Rating Ordering Information Part No. AH1-1G AH1-PCB Description High Dynamic Range Amplifier (lead-free/green/RoHS-compliant SOT-89 Pkg) 0.8 – 2.5 GHz Fully Assembled Application Circuit Specifications and information are subject to change without notice. Operation of this device above any of these parameters may cause permanent damage. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x W eb site: www.wj.com Page 1 of 5 April 2007 AH1-1 High Dynamic Range Amplifier S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25qC, unmatched device in a 50 ohm system) Input return loss can be improved with the appropriate input matching network shown later in this datasheet. Gain vs. Output Power Output IP3 vs. Output Power Typical Device Data 14 13 12 11 10 9 0 5 10 Output Power (dBm) Gain vs. Frequency 100% Idss 75% Idss 50% Idss 45 40 35 30 100% Idss 900 MHz OIP3 Load Pull Circles 900 MHz IP3=35 IP3=36 IP3=37 IP3=38 IP3=39 IP3=41 25 20 75% Idss 50% Idss 15 20 0 5 10 Output Power (dBm) 15 20 VSWR=1.5 VSWR=2 VSWR=3 VSWR=4 VSWR=5 Return Loss vs. Frequency 20 15 0 -5 -10 w/o Matching Circuitry 10 5 -15 -20 -25 S11 S22 0 0 500 1000 1500 2000 2500 3000 Frequency (MHz) ACPR vs. Channel Power -30 0 500 1000 1500 2000 2500 3000 Frequency (MHz) ACPR vs. Channel Power -40 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1900 MHz -40 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz -50 -50 -60 -60 -70 10 11 12 13 14 15 16 17 Output Channel Power (dBm) -70 10 11 12 13 14 15 16 17 Output Channel Power (dBm) S-Parameters (VD = +5 V, ID = 150 mA, T = 25 qC, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 -2.65 -7.97 -8.57 -8.47 -8.24 -7.79 -7.18 -6.55 -6.03 -5.69 -5.55 -5.68 -5.86 -29.52 17.80 164.25 -24.29 45.18 -8.25 -44.15 15.28 158.50 -21.31 6.75 -19.01 -60.61 14.91 147.54 -21.11 -3.83 -25.15 -80.72 14.60 134.66 -21.11 -10.90 -29.26 -100.99 14.22 121.38 -21.21 -17.00 -30.76 -120.81 13.80 108.59 -21.21 -23.01 -29.83 -138.15 13.27 96.13 -21.41 -28.54 -29.30 -152.70 12.69 84.26 -21.62 -33.67 -29.12 -164.30 12.11 73.25 -21.83 -38.35 -28.24 -173.54 11.57 62.88 -21.99 -42.48 -26.58 176.22 11.12 52.70 -22.10 -46.41 -25.60 166.67 10.76 42.57 -22.16 -50.57 -26.12 153.06 10.40 31.81 -22.27 -55.21 -29.48 Device S-parameters are available for download off of the website at: http://www.wj.com -39.80 -65.37 -69.25 -84.69 -115.12 -88.78 -94.19 -136.07 -112.00 -97.44 -90.19 -87.80 -82.67 Specifications and information are subject to change without notice. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x W eb site: www.wj.com Page 2 of 5 April 2007 AH1-1 High Dynamic Range Amplifier Application Circuit: 800 – 2500 MHz (AH1-PCB) Vcc = +5 V Typical RF Performance at 25 qC Frequency S21 – Gain S11 – Input R.L. S22 – Output R.L. Output P1dB Output IP3 (+5 dBm / tone, 10 MHz spacing) ID=C5 C=56 pF All passive components are of size 0603 unless otherwise noted. Component C1 is shown in the silkscreen but is not used for this configuration. ID=C2 C=56 pF Z0=22 Ohm EL=15.2 Deg F0=0.9 GHz ID=Q1 NET="AH1" ID=C4 L=12 nH MHz 900 1900 2140 dB 14.2 12.2 12.0 dB -21 -14 -21 dB -14 -13 -11 dBm +21.7 +22 +22 dBm +42 +41 +40 ID=C6 C=56 pF ID=C3 L=5.6 nH IS-95 Channel Power (@-45 dBc ACPR, 9 channels fwd) dBm +15.5 +16.5 dB 3.2 3.3 3.3 +5V @ 150mA Noise Figure Device Bias Circuit Board Material: .062” total thickness with a .014” FR-4 top RF layer, 4 layers (other layers added for rigidity), 1 oz copper, 50: Microstrip line details: width = .025”. Gain Return Loss 15 14 13 12 11 10 750 1000 1250 1500 1750 2000 2250 Frequency (MHz) 0 -5 Gain (dB) Gain and Output IP3 vs. Temperature Frequency = 800, 801 MHz @ Pout =5dBm 15 14 13 12 11 Gain OIP3 10 45 -10 -15 -20 -25 -30 750 1000 1250 1500 S11 S22 43 42 41 40 -40 -15 10 35 60 85 Temperature (oC) 1750 2000 2250 Frequency (MHz) ACPR vs. Channel Power ACPR vs. Channel Power -40 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1900 MHz -40 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz P1dB and Noise Figure vs. Temperature 23 P1dB (dBm) Frequency = 800 MHz 4 3 2 P1dB NF -50 -50 22 21 20 19 -60 -60 1 0 -70 10 11 12 13 14 15 16 17 -70 10 11 12 13 14 15 16 17 Output Channel Power (dBm) -40 -15 10 35 Output Channel Power (dBm) Temperature ( C) o 60 85 Specifications and information are subject to change without notice. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x W eb site: www.wj.com Page 3 of 5 April 2007 Noise Figure (dB) Output IP3 (dBm) 44 AH1-1 High Dynamic Range Amplifier 250 - 650 MHz Reference Design Gain / Return Loss Freq. Gain S11 S22 P1dB OIP3 NF Bias MHz dB dB dB dBm dBm dB G ain (dB) 14 -10 S 11, S22 (s B) 250 14.8 -10 -19 450 650 14.5 13.8 -36 -11 -17 -13 +22 +42 2.8 2.8 3.2 +5V @ 150mA 16 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) 0 +5V 15 -5 C=1000 pF L=82 nH NET="AH1" L=15 nH C=1000 pF 13 -15 12 -20 11 0.2 0.3 0.4 0.5 Frequency (GHz) 0.6 0.7 -25 900 MHz Reference Design +5 V Freq. Gain S11 S22 P1dB OIP3 NF Bias MHz dB dB dB dBm dBm dB S11, S 22 (dB) 800 13.7 -13 -13 900 1000 13.7 13.6 -16 -18 -14 -15 +22 +41 2.5 +5V @ 150mA Gain / Return Loss 15 0 C=100 pF DB(|S(2,1)|) (L) 14 DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) -5 L=100 nH G ain (dB ) 13 -10 C=100 pF NET="AH1" C=100 pF 12 -15 11 -20 L=12 nH 10 0.7 0.8 0.9 Frequency (GHz) 1 1.1 -25 2350 MHz Reference Design Gain / Return Loss 13 0 DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R) +5V C=56 pF Freq. Gain S11 S22 P1dB OIP3 NF Bias GHz dB dB dB dBm dBm dB G ain (dB) 11 -10 S 11, S 22 (sB) 2.3 12.0 -24 -12 2.35 2.4 12.0 11.9 -40 -25 -13 -14 +22 +41 3.7 +5V @ 150mA 12 -5 TLINP Z0=50 Ohm L=250 mil Eeff=3.4 Loss=0 F0=0 GHz L=22 nH NET="AH1" C=56 pF 10 -15 9 -20 C=1.2 pF 8 2.1 2.2 2.3 2.4 Frequency (GHz) 2.5 2.6 -25 3500 MHz Reference Design Gain / Return Loss Freq. Gain S11 S22 P1dB OIP3 NF Bias GHz dB dB dB dBm dBm dB 3.5 3.8 9.9 9.5 -18 -14 -17 -16 +21.6 +41 4.8 4.3 4.1 +5V @ 150mA S11, S22, (dB) G ain (dB) 3.3 9.8 -10 -16 11 0 +5V C=18 pF DB(|S(1,1)|) (R) 10 DB(|S(2,2)|) (R) DB(|S(2,1)|) (L) -5 TLINP Z0=80 Ohm L=50 mil Eeff=3.4 Loss=0 F0=0 GHz L=12 nH NET="AH1" 9 -10 C=18 pF 8 -15 7 -20 C=1 pF 6 3 3.2 3.4 3.6 Frequency (GHz) 3.8 4 -25 Specifications and information are subject to change without notice. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x W eb site: www.wj.com Page 4 of 5 April 2007 AH1-1 High Dynamic Range Amplifier This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260qC reflow temperature) and leaded (maximum 245qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu. AH1-1G Mechanical Information Outline Drawing Product Marking The AH1-1G will be marked with “AH1G” designator. An alphanumeric code (“XXXX-X”) is also marked below part designator on the top surface of package. A “1” will be lasermarked in upper right-hand corner. an lot the the the Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1B Passes 500V to