AH116

½ Watt, High Linearity InGaP HBT Amplifier AH116 The Communications Edge TM Product Information Product Features x 800 – 1000 MHz x +28 dBm P1dB x +43 dBm Output IP3 x 17.5 dB Gain @ 900 MHz x +5V Single Positive Supply x MTTF > 100 Years x Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg. Product Description The AH116 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband tuned application circuits with up to +43 dBm OIP3 and +28 dBm of compressed 1-dB power and is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high linearity and medium power is required. The internal active bias allows the AH116 to maintain high linearity over temperature and operate directly off a +5 V supply. This combination makes the device an excellent fit for transceiver line cards and power amplifiers in current and next generation multi-carrier 3G base stations. Functional Diagram 1 8 7 6 5 2 3 4 Applications x Final stage amplifiers for Repeaters x Mobile Infrastructure Function Vref Input Output Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 Specifications (1) Parameters Frequency Range Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR Typical Performance (1) Min 15 Units MHz dB dB dB dBm dBm dBm dB mA V Typ 900 17.5 18 7 +28.7 +43 +23 7 250 +5 Max Parameters Frequency Gain S11 S22 Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR Units MHz dB dB dB dBm dBm dBm dB Typical 900 17.5 -18 -7 +28.7 +43 +23 7 +5 V @ 250 mA +27 +42 Noise Figure Operating Current Range (3) Device Voltage 200 300 Noise Figure Supply Bias 1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 900 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions. It is expected that the current can increase up to 300mA at P1dB. Absolute Maximum Rating Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature Parameter Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice         -40 to +85 qC -65 to +150 qC +22 dBm +8 V 400 mA 2W +250 qC Rating Ordering Information Part No. AH116-S8G AH116-S8PCB900 Description 900 MHz Evaluation Board (lead-free/green/RoHS-compliant SOIC-8 Pkg) ½ Watt, High Linearity InGaP HBT Amplifier WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 1 of 4 April 2006 ½ Watt, High Linearity InGaP HBT Amplifier S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, calibrated to device leads) 0.8 AH116 The Communications Edge TM Product Information ¡ Typical Device Data S11 6 0. 1.0 2. 0 6 0. 30 25 20 Gain (dB) 15 0.8 Gain_Maximum Stable Gain DB(|S[2,1]|) DB(GMax) 0. 4 Swp Max 5.05GHz S22 Swp Max 5.05GHz 2. 0 0 3. 1.0 4. 0 0.2 5.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 10 -5. 0 5.0 0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Frequency (GHz) 0.8 0.9 1 .4 -0 .4 -0 .0 -2 -0 .6 -0 .6 Swp Min 0.05GHz -0.8 - 0 2. -0.8 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 – 5050 MHz, with markers placed at 0.5 – 5.05 GHz in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S21 (dB) S21 (ang) ¢ S12 (dB) -1.0 S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 -2.72 -2.25 -2.31 -3.08 -5.79 -19.72 -6.06 24.16 20.33 17.23 15.63 15.58 15.22 11.91 133.35 124.95 119.37 98.28 69.70 25.60 -22.67 -36.72 -35.31 -34.90 -33.62 -32.10 -31.19 -33.26 29.75 13.96 2.32 -16.36 -37.73 -78.95 -129.67 -2.23 -3.08 -3.32 -3.48 -2.87 -2.27 -1.40 -102.97 -137.03 -159.63 -172.70 -176.25 -179.74 173.15 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning Shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments. Specifications and information are subject to change without notice         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com -1.0 Page 2 of 4 -4 .0 -3 .0 -4 .0 -5. 0 5 .2 -0 2 -0. Swp Min 0.05GHz -10.0 0. 4 0 3. 0 4. 5 .0 -10. 0 -3 .0 0.2 10.0 April 2006 ½ Watt, High Linearity InGaP HBT Amplifier Typical RF Performance at 25 qC Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+17 dBm / tone, 1 MHz spacing) AH116 The Communications Edge TM Product Information 900 MHz Application Circuit (AH116-S8PCB900) 900 MHz 17.5 dB -18 dB -7 dB +28.7 dBm +43 dBm +23 dBm 7 dB +5 V 250 mA Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current S21 vs Frequency 20 18 S21 (dB) S11 (dB) S11 vs. Frequency 0 -5 -10 -15 -20 -25 -30 -35 840 +25°C +85°C -40°C 860 880 900 920 940 S22 (dB) S22 vs. Frequency 0 -5 -10 -15 -20 -25 -30 -35 840 +25°C +85°C -40°C 860 880 900 920 940 16 14 12 10 840 +25°C +85°C -40°C 860 880 900 920 940 Frequency (MHz) Frequency (MHz) Noise Figure vs. Frequency 10 8 P1 dB (dBm) NF (dB) P1 dB vs. Frequency 30 28 26 24 22 20 840 +25°C +85°C -40°C 860 880 900 920 940 ACPR (dBm) ACPR vs. Channel Power IS-95, 9 Ch. Fwd, ±885KHz Meas BW, 900 MHz Frequency (MHz) 6 4 2 0 840 +25°C +80°C -40°C 860 880 900 920 940 -40 -45 -50 -55 -60 -65 -70 -75 -80 18 19 20 21 22 Output Channel Power (dBm) +25°C +85°C -40°C 23 24 Frequency (MHz) Frequency (MHz) OIP3 vs. Frequency +25°, +13 dBm / tone OIP3 vs. Temperature freq. = 900, 901 MHz, +13 dBm /tone OIP3 vs. Output Power 45 43 OIP3 (dBm) freq. = 900, 901 MHz, +25°C 45 43 OIP3 (dBm) 45 43 OIP3 (dBm) 41 39 37 35 840 41 39 37 41 39 37 35 860 880 900 920 940 35 -40 -15 10 35 Temperature (°C) 60 85 8 10 12 14 16 18 20 Frequency (MHz) Output Power (dBm) Specifications and information are subject to change without notice £ £ £ £ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 3 of 4 April 2006 ½ Watt, High Linearity InGaP HBT Amplifier AH116 The Communications Edge TM Product Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 qC reflow temperature) and lead (maximum 245 qC reflow temperature) soldering processes. AH116-S8G (Lead-Free Package) Mechanical Information Outline Drawing Product Marking The component will be marked with an “AH116G” designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an “AH116-S8” or “ECP052G” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Mounting Configuration / Land Pattern 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature (1) Thermal Resistance (2), Rth Junction Temperature (3), Tj ¥ MTTF (million hrs) Rating 100000 MTTF vs. GND Tab Temperature Notes: 1. The amplifier can be operated at 105 C case temperature for up to 1000 hours over its lifetime without degradation in performance and will not degrade device operation at the recommended maximum 85 C case temperature for the rest of its lifetime. 2. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 3. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. ¥ ¥ ¥ ¥ -40 to +85 qC 62 qC / W 162 qC 10000 1000 100 60 70 80 90 100 110 Tab Temperature (°C) 120 Specifications and information are subject to change without notice ¤ ¤ ¤ ¤ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com § ¦ ESD Rating: Value: Test: Standard: Class 1B Passes 500V to