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AH202_07

AH202_07

  • 厂商:

    WJCI

  • 封装:

  • 描述:

    AH202_07 - 1W High Linearity Amplifier - WJ Communication. Inc.

  • 数据手册
  • 价格&库存
AH202_07 数据手册
AH202 Product Features • 50 – 2200 MHz • +30 dBm P1dB • +47 dBm Output IP3 • 17 dB Gain @ 900 MHz • MTTF >100 Years • Single Positive Supply • Internally Matched • Lead-free/RoHS-compliant 6x6mm QFN SMT package 1W High Linearity Amplifier Product Description The AH202 is a 1-Watt driver amplifier that offers excellent dynamic range in a low-cost, lead-free/RoHScompliant 6x6 mm 28-pin QFN surface-mount package. This device provides its optimum P1dB and OIP3 performance when biased at + 11 V; It can also be biased as low as +9 V for lower power applications. The backside metalization provides excellent thermal dissipation while allowing visible evidence of solder reflow across the bottom of the package on a SMT board. Superior thermal design allows the product an MTTF of over 100 years at a mounting temperature of +85º C. All devices are 100% RF & DC tested. The product is targeted for use as a driver amplifier for wireless infrastructure or CATV applications where high linearity and medium power is required. Functional Diagram 28 1 2 RF IN 3 4 5 6 N/C 7 8 9 10 11 12 13 14 27 26 25 24 23 22 21 20 19 RF OUT 18 17 16 15 Applications • Mobile Infrastructure • CATV / DBS • Optimal for VHF / UHF broadband applications • Defense / Homeland Security Function Input No Connect Output/Bias No Connect or Ground Ground Pin No. 3 7 19 All other pins Backside Paddle Specifications (1) Parameters Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure IS-95 Channel Power (3) @ -45dBc ACPR Typical Performance (4) Units MHz MHz dB dB dB dBm dBm dB dBm mA V Min 50 14 Typ 800 17 20 18 +30 +47 2.5 +24 330 +11 Max 2200 Parameters Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure IS-95 Channel Power @ -45dBc ACPR @ -45dBc ACLR Units MHz dB dB dB dBm dBm dB (3) Typical 1900 15 17 10 +29.7 +46 3.8 +23 2140 15 8 13 +29.4 +45.5 4.8 +20.5 +29 +45 900 17 20 18 +30 +47 2.8 +24 - dBm (5) WCDMA Channel Power 390 Supply Bias dBm Operating Current Range Supply Voltage +11 V @ 330 mA 4. Data reflects performance of a typical AH202 in an application circuit including associated circuit board and 1. Test conditions unless otherwise noted: 25ºC, Vdd = 11 V in a 50- PDWFKHGIL[WXUH passive component losses. 5. 3GPP W-CDMA, Test Model 1, +32 DPCH, Pk/Avg Ratio = 8.5 dB at a 0.01% probability, ±5 2. 3OIP measured with two tones at an output power of +10 dBm/tone separated by 10 MHz. The MHz offset, Integrated Channel BW = 3.84 MHz. suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. IS-95, 9 Channels Forward, Pk/Avg Ratio = 11.5 dB at a .001% probability, ±885 kHz offset, 30 kHz bandwidth, Channel BW = 1.23 MHz. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature DC Voltage RF Input Power (continuous) Maximum Junction Temperature Ordering Information Part No. AH202-F AH202-PCB900 AH202-PCB1900 AH202-PCB2140 Rating -40 to +85 °C -55 to +125 °C +13 V +16 dBm +220 °C Description 1W High Linearity Amplifier (lead-free/RoHS-compliant 6x6mm QFN package) 900 MHz Evaluation Board 1900 MHz Evaluation Board 2140 MHz Evaluation Board Specifications and information are subject to change without notice Operation of this device above any of these parameters may cause permanent damage. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 1 of 9 May 2007 AH202 Typical Device Data 1W High Linearity Amplifier S-parameters (VDS = +11 V, IDS P$XQPDWFKHGGHYLFHLQD V\VWHP  • Measurements are shown for an unmatched packaged device with the data being de-embedded to the device leads. Gain 20 19 18 17 S21 (dB) 16 (dB) 15 14 13 12 11 10 0 0.5 1 1.5 Frequency (GHz) 2 2.5 -30 0 0.5 1 1.5 Frequency (GHz) 2 2.5 -20 -25 -15 -5 -10 Return Losses 0 S11 S22 S-Parameters (VDS = +11.0V, IDS = 330mA, T = +25°C, unmatched device in a 50 Ω system) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) -17.78 -18.60 -17.34 -14.70 -11.92 -10.29 -9.20 -8.23 -7.74 -7.43 -7.73 -8.76 -10.40 -10.57 -6.72 -3.60 -1.91 S11 (ang) -137.86 -153.83 -150.80 -149.17 -159.61 -171.08 174.71 160.52 145.06 127.89 108.79 84.28 43.69 -24.74 -90.87 -136.82 -167.99 S21 (dB) 18.26 18.06 18.03 17.87 17.43 16.93 16.36 15.90 15.43 15.04 14.82 14.72 14.59 14.42 13.29 10.89 7.61 S21 (ang) 169.32 166.20 156.86 135.75 115.76 96.20 77.49 58.22 40.52 23.04 4.23 -15.48 -38.77 -65.43 -97.06 -128.44 -154.46 S12 (dB) -21.43 -21.34 -21.46 -21.84 -22.34 -22.96 -23.72 -24.54 -25.32 -26.07 -26.69 -26.94 -26.60 -25.80 -25.02 -24.82 -25.13 S12 (ang) 1.41 -4.54 -12.16 -25.03 -37.49 -48.84 -61.29 -73.36 -85.56 -99.09 -115.15 -132.95 -155.57 176.52 143.13 111.82 87.68 S22 (dB) -15.33 -15.51 -16.27 -18.57 -21.38 -26.07 -21.37 -16.16 -12.76 -10.27 -8.39 -7.17 -6.37 -6.14 -6.69 -7.11 -6.73 S22 (ang) -170.64 177.37 161.24 135.96 93.89 25.81 -47.34 -78.06 -98.55 -114.42 -129.46 -144.14 -158.61 -172.06 176.96 173.14 174.58 Application Circuit PC Board Layout Circuit Board Material: .014” Getek (εr=4.2), four layer, 1 oz copper Microstrip line details: width = .026”, spacing = .026” Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 2 of 9 May 2007 AH202 1W High Linearity Amplifier Reference Design: 50-800 MHz The AH202 is suitable for applications between 50 – 800 MHz without any requirements for input or output matching. Only bypass and blocking capacitors and an RF bias choke are needed for operation. A user can simply request an AH202-PCB900 Evaluation Board and replace components C1, C2, C3, C6, L1, and L2 to the values shown below to evaluate the device. Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+10 dBm / tone, 10 MHz spacing) MHz dB dB dB dBm dBm dB 50 18 -13 -13 200 17.9 -17 -15 400 600 800 17.5 17.0 16.3 -15 -12.4 -10.3 -17 -22 -28 +30 +47 Supply Bias +11 V @ 330 mA + 11V CAP ID=C5 C=1e5 pF CAP ID=C4 (0805) C=1000 pF PORT P=1 Z=50 Ohm CAP ID=C1 C=1000 pF RES ID=L2 R=0 Ohm IND ID=L1 L=470 nH PORT P=2 Z=50 Ohm SUBCKT ID=S1 NET="AH202_F" CAP ID=C2 C=1000 pF Measured Performance 20 15 10 Magnitude (dB) 5 0 -5 -10 -15 -20 -25 -30 0 0.2 0.4 0.6 Frequency (GHz) 0.8 1 DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|) Notes: • • • • 5  removed from the circuit without any effect to the performance. The microstrip line is weakly co-planar. Ground planes around it are not necessary for operation of the AH202. Adequate heat sinking is required for the device. Further mounting instructions are shown in the AH202 datasheet. The RF choke should be a wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft’s 1008 CS series is recommended (part #1008CS-471X_B_).  DW GHVLJQDWRU /  LV XVHG DV D SODFH KROGHU IRU D GLIIHUHQW DSSOLFDWLRQ FLUFXLW  ,W FDQ EH Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 3 of 9 May 2007 AH202 Frequency S21 - Gain S11 S22 Output P1dB Output IP3 IS-95A Ch. Power @ -45 dBc ACPR 1W High Linearity Amplifier Application Circuit: 900 MHz (AH202-PCB900) Typical RF Performance at 25°C 900 MHz 17 dB - 20 dB - 18 dB + 30 dBm + 47 dBm + 24 dBm 2.8 dB +11 V 330 mA CAP ID=C6 C=2.7 pF CAP ID=C2 C=100 pF PORT P=2 Z=50 O hm + 11V CAP ID=C5 (1206) C=100000 pF CAP ID=C4 (0805) C=1000 pF PO RT P=1 Z=50 Ohm CAP ID=C1 C=100 pF IND ID=L2 L=3.3 nH SUBCKT ID=S1 NET="AH202_F" CAP ID=C3 C=100 pF IND ID=L1 (1008) L=33 nH Noise Figure Supply Voltage Supply Current Notes: 1. 2. 3. 4. The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft’s 1008 CS series (part # 1008CS-330X_B) is recommended. C6 is located at silk screen marker “C” on the WJ evaluation board. S-Parameters Noise Figure vs. Frequency 0 Noise Figure (dB) S11 & S22 (dB) -5 -10 5 4 3 2 1 0 700 Vd = 11.0V, Temp = 25°C 20 19 18 S21 17 16 15 14 13 12 11 10 700 Vd = +11.0V, Temp = +25°C S21 (dB) S22 S11 -15 -20 -25 1100 800 900 1000 Frequency (MHz) 800 900 1000 Frequency (MHz) 1100 OIP3 vs. Pout Vd = +11.0V, Temp = +25°C ACPR vs. Channel Power 900 MHz, IS-95 Ch. Fwd. ± 885KHz offset, 30 KHz Meas. BW 55 ACPR (dBc) 50 45 40 35 5 7 9 11 13 Pout (dBm) 15 17 -40 -45 OIP3 (dBm) -50 -55 -60 -65 -70 -75 15 17 19 21 23 Output Channel Power (dBm) 25 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 4 of 9 May 2007 AH202 1W High Linearity Amplifier Application Circuit: 1900 MHz (AH202-PCB1900) Typical RF Performance at 25°C Frequency S21 - Gain S11 S22 Output P1dB Output IP3 IS-95A Ch. Power @ -45 dBc ACPR + 11V CAP ID = C5 (12 06 ) C=1e 5 pF 1900 MHz 15 dB - 17 dB - 10 dB + 29.7 dBm + 46 dBm + 23 dBm 3.8 dB +11 V 330 mA CAP ID= C4 (0 80 5) C=1 000 pF P OR T P =1 Z= 50 O hm S UB C KT ID= S1 N ET ="AH 20 2_F" CAP ID =C3 C =56 pF IND ID= L 1 (1 008 ) L=2 2 nH CAP ID= C2 C =56 pF Noise Figure Supply Voltage Supply Current CAP ID= L 2 C =2.4 pF TLIN ID = TL1 Z0=50 O hm EL =31 D eg F0=19 00 M H z CAP ID = C7 C=1 .0 pF P OR T P =2 Z= 50 Ohm Notes: 1. 2. 3. The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft’s 1008 CS series (part # 1008CS-220X_B) is recommended. C8 is located at silk screen marker “7” on the WJ evaluation board. Noise Figure Vd = +11.0 V, Temp = +25°C S-Parameters Vd = +11.0V, Temp = +25C 16 15 14 13 12 11 10 9 8 7 6 1700 S21 0 S11 & S22 (dB) -5 -10 S22 6 Noise Figure (dB) 5 4 3 2 1 0 1700 S21 (dB) -15 -20 -25 2200 S11 1800 1900 2000 2100 Frequency (MHz) 1800 1900 Frequency (MHz) 2000 OIP3 vs. Pout ACPR vs. Channel Power 1900 MHz., IS-95 Ch. Fwd, ± 885 KHz offset, 30 KHz Meas. BW 55 50 Vd = +11.0 V, Temp = +25°C -40 -45 ACPR (dBc) 5 7 9 11 Pout (dBm) 13 15 17 -50 -55 -60 -65 -70 -75 14 16 18 20 22 Output Channel Power (dBm) 24 OIP3 (dBm) 45 40 35 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 5 of 9 May 2007 AH202 1W High Linearity Amplifier Reference Design: 1900 MHz using the AH202 in the previously recommended circuit configuration with the AH201 (AH201-PCB1900) Typical RF Performance at 25°C Frequency S21 - Gain S11 S22 Output P1dB Output IP3 IS-95A Ch. Power @ -45 dBc ACPR +1 1V CAP ID=C5 (1206) C=1e5 pF 1900 MHz 15 dB - 8 dB - 8 dB + 29.7 dBm + 46 dBm + 23 dBm 3.8 dB +11 V 330 mA CAP ID=C4 (0805) C=1000 pF PORT P=1 Z=50 Ohm CAP ID=C1 C=56 pF RES ID=L2 R=0 Ohm SUBCKT ID=S1 NET="AH202_F" CAP ID=C3 C=56 pF IND ID=L1 (1008) L=22 nH CAP ID=C2 C=56 pF Noise Figure Supply Voltage Supply Current CAP ID=C6 C=0.5 pF TLIN ID=TL1 Z0=50 Ohm EL=31 Deg F0=1900 MHz CAP ID=C7 C=1.0 pF PORT P=2 Z=50 Ohm Notes: 1. The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. 2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. 3. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft’s 1008 CS series (part # 1008CS-220X_B) is recommended. 4. 5. 16 15 S21 (dB) 5  the performance. C6 is located at silk screen marker “C” and C8 is located between silk screen markers “6” and “7” on the WJ evaluation board. S-Parameters Vd = +11.0V, Temp = +25C S21 DWGHVLJQDWRU/LVXVHGDVDSODFHKROGHUIRUDGLIIHUHQWDSSOLFDWLRQFLUFXLW,WFDQEHUHPRYHGIURPWKHFLUFXLWZLWKRXWDQ\HIIHFWWR Noise Figure 0 -5 Noise Figure (dB) S11 & S22 (dB) 6 5 4 3 2 1 0 1700 Vd = 11.0V, Temp = 25°C S22 14 13 12 1700 S11 -10 -15 -20 2000 1800 1900 Frequency (MHz) 1800 1900 Frequency (MHz) 2000 OIP3 vs. Pout Vd = +11V, Temp = 25°C ACPR vs. Channel Power 1900 MHz., IS-95 Ch. Fwd, ± 885 KHz offset, 30 KHz Meas. BW 55 OIP3 (dBm) ACPR (dBc) 5 7 9 11 13 Pout (dBm) 15 17 50 45 40 35 -40 -45 -50 -55 -60 -65 -70 -75 14 16 18 20 22 Output Channel Power (dBm) 24 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 6 of 9 May 2007 AH202 1W High Linearity Amplifier Application Circuit: 2140 MHz (AH202-PCB2140) Typical RF Performance at 25°C Frequency S21 - Gain S11 S22 Output P1dB Output IP3 W-CDMA Ch. Power @ -45 dBc ACLR 2140 MHz 15 dB - 8 dB - 13 dB + 29.4 dBm + 45.5 dBm + 20.5 dBm 4.8 dB +11 V 330 mA + 11V CA P ID =C5 (12 06 ) C=1e 5 pF CA P ID=C 4 (0 80 5) C=1 000 pF P OR T P =1 Z = 50 O hm C AP ID = L2 C = 2.2 p F S UB C K T ID=S 1 N ET ="A H 20 2_F" C AP ID = C3 C = 56 pF IND ID=L 1 (1 008 ) L= 2 2 nH C AP ID=C 2 C = 56 pF Noise Figure Supply Voltage Supply Current T LIN ID =T L1 Z 0= 50 O hm EL = 28 D eg F 0= 21 40 M H z CA P ID =C 7 C=1 .0 pF P OR T P =2 Z = 50 O hm Notes: 1. 2. 3. 4. The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft’s 1008 CS series (part # 1008CS-220X_B) is recommended. C7 is located at silk screen marker “6” on the WJ evaluation board. S-Parameters 16 14 S21 (dB) 12 10 8 6 2000 S11 Noise Figure 0 S11 & S22 (dB) -5 -10 S22 Vd = +11.0V, Temp = +25°C S21 6 Noise Figure (dB) 5 4 3 2 1 0 2000 Vd = + 11V, Temp = 25°C -15 -20 -25 2300 2100 2200 Frequency (MHz) 2100 2200 Frequency (MHz) 2300 OIP3 vs. Pout 55 50 45 40 35 5 7 9 11 Pout (dBm) 13 15 17 Vd = +11.0 V, Temp = +25°C ACLR vs. Channel Power f = 2140MHz, 3GPP W-CDMA, Test Model 1, +32 DPCH, ±5 MHz offset -40 ACLR (dBc) -45 -50 -55 -60 15 16 17 18 19 20 21 Output Channel Power (dBm) 22 OIP3 (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 7 of 9 May 2007 AH202 Frequency S21 - Gain S11 S22 Output P1dB Output IP3 W-CDMA Ch. Power @ -45 dBc ACLR 1W High Linearity Amplifier Reference Design: 2140 MHz using the AH202 in the previously recommended circuit configuration with the AH201 (AH201-PCB2140) Typical RF Performance at 25°C 2140 MHz 14.6 dB -7 dB - 7 dB + 29.4 dBm + 45.5 dBm + 20.5 dBm 4.2 dB +11 V 330 mA TLIN ID= TL1 Z0= 50 Ohm E L=28 Deg F0= 2140 M Hz + 11V CAP ID=C5 (1206) C=1e5 pF CAP ID=C 4 (0805) C=1000 pF P ORT P =1 Z=5 0 Ohm C AP ID=C1 C =56 pF RES ID=L2 R=0 Ohm SUBCKT ID=S1 NET="AH202_F" CAP ID=C3 C=56 pF IND ID=L 1 (10 08) L=18 nH CAP ID=C2 C=56 pF Noise Figure Supply Voltage Supply Current CAP ID=C7 C=1.1 pF P ORT P =2 Z=50 Ohm Notes: 1. 2. 3. 4. 5. The amplifier should be connected directly to a +11 V regulator; no dropping resistor is required. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. Component sizes are 0603 unless otherwise noted. RF choke L1 should be wirewound ceramic type to insure sufficient current carrying capacity. Coilcraft’s 1008 CS series (part # 1008CS-180X_B) is recommended. R = 0 DWGHVLJQDWRU/LVXVHGDVDSODFHKROGHUIRUDGLIIHUHQWDSSOLFDWLRQFLUFXLW,WFDQEHUHPRYHGIURPWKHFLUFXLWZLWKRXWDQ\HIIHFW to the performance. C7 is located between silk screen markers “5” and “6” on the WJ evaluation board. Noise Figure 0 -5 S11 S-parameters Vd = +11V, Temp = +25C 16 S21 6 Noise Figure (dB) S11 & S22 (dB) 5 4 3 2 1 0 2000 Vd = + 11V, Temp = 25°C 15 S21 (dB) 14 13 12 11 2000 S22 -10 -15 -20 -25 2300 2100 2200 Frequency (MHz) 2100 2200 Frequency (MHz) 2300 OIP3 vs. Pout Vd = + 11V, Temp = 25°C ACLR vs. Channel Power f = 2140MHz, 3GPP W-CDMA, Test Model 1, +32 DPCH, ±5 MHz offset 55 ACLR (dBc) 50 45 40 35 5 7 9 11 13 Pout (dBm) 15 17 -40 -45 -50 -55 -60 15 16 17 18 19 20 21 Output Channel Power (dBm) 22 OIP3 (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 8 of 9 May 2007 AH202 1W High Linearity Amplifier Mechanical Information This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded (maximum 245°C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. Outline Drawing Product Marking The component will be lasermarked with a “AH202F” product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class III Passes between 500 and 1000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 Mounting Configuration / Land Pattern MSL Rating: Level 2 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Functional Pin Layout Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 FUNCTION GND or N/C GND or N/C RF Input GND or N/C GND or N/C GND or N/C No Connect GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28 FUNCTION GND or N/C GND or N/C GND or N/C GND or N/C RF Output GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C GND or N/C Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) M TTF vs. GND Tab Temperature 100 Rating -40 to +85 °C 17.5 °C / W 152 °C 10 Backside paddle is RF and DC ground. Pin 7 is required to be not connected or grounded for the AH202 to be functional. Notes: 1. The amplifier can be operated at 105 °C case temperature for up to 1000 hours over its lifetime with minimal degradation in performance and will not degrade device operation at the recommended maximum 85 °C case temperature for the rest of its lifetime. 2. The thermal resistance is referenced from the hottest part of the junction to the backside copper paddle. 3. This corresponds to the typical biasing condition of +11V, 350 mA at an 85° C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160° C. 1 0 60 70 80 90 100 Tab Temperature (°C) 110 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 9 of 9 May 2007
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