AH212-EPCB1960

AH212 Product Features  1800 – 2400 MHz  26 dB Gain  +30 dBm P1dB  +46 dBm Output IP3  +5V Single Positive Supply  Internal Active Bias The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Description The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +30 dBm of compressed 1-dB power. The amplifier is available in an industry-standard SMT lead-free/green/RoHS-compliant SOIC-8 or 4x5mm DFN package. All devices are 100% RF and DC tested. Functional Diagram Vcc1 1 8 N/C Vbias1 2 7 Vcc2 / RF Out 6 Vcc2 / RF Out RF In 3 Vbias2 4 5 N/C AH212-S8G Vbias1 1 12 Vcc1 N/C 2 11 N/C RF In 3 10 Vcc2 / RF Out N/C 4 N/C 5 Vbias2 6 9 Vcc2 / RF Out 8 N/C 7 N/C  Lead-free/green/RoHS-compliant The product is targeted for use as linear driver amplifier for SOIC-8 & 4x5mm DFN Package various current and next generation wireless technologies Applications  Mobile Infrastructure  WiBro Infrastructure  TD-SCDMA such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA, and WiBro, where high linearity and high power is required. The internal active bias allows the AH212 to maintain high linearity over temperature and operate directly off a +5 V supply. AH212-EG Specifications (1) Parameters Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure W-CDMA Channel Power @ -45 dBc ACLR Typical Performance (1) Units Min MHz MHz dB dB dB dBm dBm dB dBm mA mA mA V 340 1800 22.2 2140 25 25 9 +29.5 +46 6.0 +21 400 85 315 5 500 Typ Max 2400 Parameters Frequency Gain (3) Input Return Loss Output Return Loss Output P1dB (3) Output IP3 IS-95A Channel Power @ -45 dBc ACPR Units MHz dB dB dB dBm dBm dBm dBm dB Typical 1960 25.8 15 11 +30 +48.5 +23.5 +21 5.5 6.0 +5 V @ 400 mA 2140 25 25 9 +29.5 +46 +29 +43.5 W-CDMA Channel Power @ -45 dBc ACLR Operating Current Range , Icc Stage 1 Amp Current, Icc1 Stage 2 Amp Current, Icc2 Device Voltage, Vcc Noise Figure Supply Bias 3. The performance is shown for the AH212-S8G (SOIC-8 package) at 25ºC. The AH212-EG in a 4x5 mm DFN package offers approximately 0.5dB more gain and 0.5 dB higher P1dB. 1. Test conditions unless otherwise noted: 25 ºC, +5V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature Ordering Information Part No. AH212-S8G AH212-EG AH212-S8PCB1960 AH212-S8PCB2140 AH212-EPCB1960 AH212-EPCB2140 Rating -40 to +85 C -65 to +150 C +26 dBm +7 V 900 mA 5W +250 ºC Description 1 Watt, High Gain InGaP HBT Amplifier (lead-free/green/RoHS-compliant SOIC-8 package) 1 Watt, High Gain InGaP HBT Amplifier (lead-free/green/RoHS-compliant 12-pin 4x5mm DFN package) 1960 MHz Evaluation Board 2140 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 1 of 12 August 2006 AH212 Gain 35 30 25 Gain (dB) 20 The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier Typical Device Data (SOIC-8) S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads) S11 1.0 S22 2. 0 DB(|S(2,1)|) AH212 6 0. 0. 4 6 0. Sw p M a x 3 GH z 1.0 Sw p M a x 3 GH z 2. 0 0.8 0 3. 3. 0.8 0 4. 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 0 15 10 5 0 0.5 1 1.5 Frequency (GHz) 2 2.5 3 -0 .6 0 5.0 10.0 .4 -0 0 2. - .4 -0 -0 .6 0 2. S (1,1) A H2 1 2 -0.8 Swp Min 0.01GHz - 1.0 S(2,2) AH212 -0.8 - Swp Min 0.01GHz - 1.0 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-S8G (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -9.19 -4.58 -0.92 -2.81 -4.10 -10.08 -14.20 -7.51 -6.58 -6.67 -7.87 -11.42 -18.51 -8.70 -4.43 -2.78 -2.44 -130.35 -125.96 -169.81 160.59 134.99 97.76 -174.16 146.36 101.88 65.24 37.31 19.84 69.85 105.38 93.47 84.89 81.11 17.61 21.86 27.39 26.96 26.35 30.19 31.30 29.49 27.14 25.02 23.35 22.01 20.56 18.40 15.61 12.91 10.51 65.80 69.36 14.98 -55.64 -69.83 -108.08 -167.40 141.86 99.61 63.05 28.87 -5.81 -44.21 -84.80 -122.39 -156.41 167.98 -64.44 -58.42 -55.39 -50.75 -49.90 -46.20 -49.63 -44.88 -45.19 -46.75 -47.96 -44.88 -40.54 -38.49 -38.94 -39.25 -38.27 122.93 -135.96 49.47 78.75 59.30 44.46 25.99 48.15 29.86 33.97 24.08 70.88 52.01 31.21 23.84 -2.01 0.70 -2.71 -2.92 -3.04 -1.13 -0.86 -0.93 -1.05 -1.97 -2.76 -2.82 -2.53 -2.08 -1.45 -1.02 -0.89 -1.16 -1.34 -145.39 -160.72 -166.12 -169.23 -179.36 172.84 164.98 159.52 156.95 154.08 150.05 143.86 134.91 123.57 113.66 106.71 101.38 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” FR4, four layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitor – C7. The markers and vias are spaced in 0.050” increments. Specifications and information are subject to change without notice. WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 2 of 12 August 2006 -4 .0 -5 .0 -3 .0 -4 .0 -5 .0 2 -0. 2 -0. -10.0 0 .2 0 5. 0. 0 4 0 4. 0 5. -10.0 -3 . 0 0.2 10.0 AH212 Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm) (+15 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8 1850 MHz Reference Design Typical RF Performance at 25 C 1800 26.4 10.5 15.5 +30.5 +47.5 5.8 1850 26.2 12 15 +30.5 +47.5 5.8 +5 V 400 mA 1900 26.2 12.5 13 +30 +48.5 5.9 PORT P=1 Z=50 Ohm CAP ID=C1 C=47 pF CAP ID=C2 C=47 pF CAP ID=C6 C=1000 pF Vc c = + 5 V CAP ID=C11 C=4.7E6 pF SIZE 1210 CAP ID=C10 C=1000 pF CAP ID=C9 C=47 pF CAP ID=C5 C=1000 pF RES ID=R2 R=0 Ohm IND ID=L1 L=18 nH 8 IND ID=L2 L=18 nH Size 0805 5 1 2 NET="AH212" 7 6 3 4 67 58 CAP ID=C8 C=47 pF Noise Figure (dB) Device / Supply Voltage Quiescent Current RES ID=R1 R=10 Ohm RES ID=R3 R=75 Ohm TLINP ID=TL1 Z0=50 Ohm L=125 mil Eeff=4.6 Loss=0 F0=0 MHz PORT P=2 Z=50 Ohm CAP ID=C7 C=2.7 pF All passive components are of size 0603 unless otherwise noted. VBC = + 5 V CAP ID=C4 C=1000 pF C7 is placed between silkscreen marker "2" and "3" on W J's eval Boar d or @ 10 degrees at 1.85G Hz away from pins 6 and 7. S21 vs. Frequency S11 vs. Frequency 28 27 S21 (dB) 0 +25°C -40°C +85°C -5 S11 (dB) 26 25 24 +25°C -4 0 ° C +85°C -10 -15 -20 -25 1800 23 1800 1820 1840 1860 1880 1900 1820 1840 1860 1880 1900 Frequency (MHz) S22 vs. Frequency Frequency (MHz) OIP3 vs. Frequency 55 50 45 40 +25° C, +15 dBm/tone 0 -5 -10 -15 -20 +25°C -40°C +85°C OIP3 (dBm) S22 (dB) -25 1800 1820 1840 1860 1880 1900 35 1800 1820 Frequency (MHz) 1840 1860 Frequency (MHz) 1880 1900 Specifications and information are subject to change without notice. WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 3 of 12 August 2006 AH212 Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+15 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier 1960 MHz Application Circuit (AH212-S8PCB1960) Typical RF Performance at 25 C 1960 MHz 25.8 dB 15 dB 11 dB +30 dBm +48.5 dBm +23.5 dBm 5.5 dB +5 V 400 mA PORT P=1 Z=50 Ohm CAP ID=C1 C=47 pF CAP ID=C2 C=47 pF CAP ID=C6 C=1000 pF Vcc = +5 V CAP ID=C11 C=4.7E6 pF SIZE 1210 CAP ID=C10 C=1000 pF C AP ID=C9 C=47 pF CAP ID=C5 C=1000 pF RES ID=R2 R=0 Ohm IND ID=L1 L=18 nH IND ID=L2 L=18 nH Size 0805 8 5 1 2 3 4 Channel Power (@-45 dBc ACPR, IS-95, 9 channels fwd) NET="AH212" 6 7 6 7 5 8 CAP ID=C8 C=47 pF Noise Figure Device / Supply Voltage Quiescent Current RES ID=R1 R=10 Ohm RES ID=R3 R=75 Ohm TLINP ID=TL1 Z0=50 Ohm L=125 mil Eeff=4.6 Loss=0 F0=0 MHz PORT P=2 Z=50 Ohm CAP ID=C 7 C=2.7 pF All passive components are of size 0603 unless otherwise noted. VBC = +5 V CAP ID=C4 C=1000 pF C7 is placed between silkscreen marker "2" and "3" on WJ's eval Board or @ 14 degrees at 1.96GHz away from pins 6 and 7. S21 vs. Frequency S11 vs. Frequency S22 vs. Frequency 28 27 S21 (dB) S11 (dB) 26 25 24 +25°C -40°C +85°C 0 +25°C -40°C +85°C 0 -5 S22 (dB) -10 -15 -20 +25°C -40°C +85°C -5 -10 -15 -20 -25 1930 23 1930 1940 1950 1960 1970 1980 1990 1940 1950 1960 1970 1980 1990 Frequency (MHz) OIP3 vs. Temperature -25 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) OIP3 vs. Output Power Frequency (MHz) OIP3 vs. Frequency 55 50 45 40 35 1930 +25° C, +15 dBm/tone 55 50 45 40 35 -40 freq. = 1960 MHz, 1961 MHz, +15 dBm/tone 55 50 45 40 35 freq. = 1960 MHz, 1961 MHz, +25° C O IP 3 ( d B m ) O IP 3 ( d B m ) 1940 1950 1960 1970 Frequency (MHz) 1980 1990 -15 10 35 Temperature (°C) 60 85 O IP 3 ( d B m ) 12 13 14 15 16 Output Power (dBm) ACPR vs. Channel Power 17 18 P Bvs. F u cy 1d req en 31 30 P 1 d B (d B m ) 29 28 27 26 1930 C ircuit bo areo izedat 1960M z ards ptim H Noise Figure vs. Frequency 7 6 -40 -45 ACPR (dBc) -50 -55 -60 -65 -70 1940 1950 1960 1970 1980 1990 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW 1960 MHz , N F (d B ) 5 4 3 -40°C 1940 1950 +25°C 1960 1970 +85°C 1980 1990 -40°C 2 1930 +25°C +85°C -40 C +25 C +85 C 18 19 20 21 22 23 24 25 Freq cy(M z) uen H Frequency (MHz) Output Channel Power (dBm) Specifications and information are subject to change without notice. WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 4 of 12 August 2006 AH212 Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm) (+15 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8 2015 MHz Reference Design for TD-SCDMA Applications Typical RF Performance at 25 C 2010 25.5 17 10.5 +30 +48 +23.5 6 +5 V 400 mA 2025 25.2 19 10 +30 +47.5 +23.5 6 RES ID=R1 R=10 Ohm RE S ID=R3 R=75 Ohm PORT P=1 Z=50 Ohm CAP ID=C1 C=47 pF CAP ID=C2 C=47 pF CAP ID=C5 C=1000 pF CAP ID=C6 C=1000 pF V cc = + 5 V CA P ID=C11 C=4.7E6 pF SIZE 1210 CAP ID=C10 C=1000 pF CAP ID=C9 C=47 pF RES ID=R2 R=0 Ohm IND ID=L1 L=18 nH IND ID=L2 L=18 nH Size 0805 8 5 1 2 NE T="AH212 " 3 4 7 6 6 7 5 8 CAP ID=C8 C=47 pF Channel Power (dBm) (@-45 dBc ACPR, IS-95, 9 channels fwd) Noise Figure (dB) Device / Supply Voltage Quiescent Current S21 vs. Frequency TLINP ID=TL1 Z0=50 Ohm L=125 mil Eeff=4.6 Loss=0 F0=0 MHz PORT P=2 Z=50 Ohm CAP ID=C7 C=2.7 pF All passive components are of size 0603 unless otherwise noted. VBC = +5 V CAP ID=C4 C=1000 pF C7 is placed between silkscreen marker "2" and "3" on WJ's eval B oard or @ 17 degrees at 2.01GHz away from pins 6 and 7. S11 vs. Frequency S22 vs. Frequency 28 27 S21 (dB) S11 (dB) 0 +25°C -40°C +85°C 0 -5 S22 (dB) -5 -10 -15 -20 +25°C -4 0 ° C +85°C 26 25 24 23 2000 -10 -15 -20 +25°C -40°C +85°C 2005 2010 2015 2020 2025 -25 2000 2005 2010 2015 2020 2025 -25 2000 2005 2010 2015 2020 2025 Frequency (MHz) OIP3 vs. Frequency 55 50 45 40 35 2010 +25° C, +15 dBm/tone Frequency (MHz) ACPR vs. Channel Power Frequency (MHz) IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 2010 MHz -35 OIP3 (dBm) ACPR (dBc) -45 -55 -65 -75 2015 2020 Frequency (MHz) 2025 19 20 21 22 23 24 Output Channel Power (dBm) Specifications and information are subject to change without notice. WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 5 of 12 August 2006 AH212 Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+15 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier 2140 MHz Application Circuit (AH212-S8PCB2140) Typical RF Performance at 25 C 2140 MHz 25 dB 25 dB 9 dB +29.5 dBm +46 dBm +21 dBm 6 dB +5 V 400 mA PORT P=1 Z=50 Ohm C AP ID=C1 C=47 pF C AP ID =C 2 C =47 pF CAP ID=C6 C=1000 pF Vcc = +5 V CAP ID=C11 C=4.7E6 pF SIZ E 1210 CAP ID=C5 C=1000 pF CAP ID =C 10 C=1000 pF CAP ID=C9 C=47 pF RES ID=R2 R=0 Ohm IN D ID =L1 L=18 nH IND ID=L2 L=18 nH Size 0805 5 8 6 7 6 7 5 8 1 2 NET="AH 212" 3 4 Channel Power (@-45 dBc ACLR, W-CDMA, Test model 1 +64 DPCH, ± 5MHz offset) CAP ID =C8 C=47 pF Noise Figure Device / Supply Voltage Quiescent Current RES ID=R1 R=10 Ohm RES ID=R3 R=75 Ohm TLINP ID=TL1 Z0=50 Ohm L=110 mil Eeff=4.6 Loss=0 F0=0 MH z PORT P=2 Z=50 Ohm C AP ID=C 7 C =2.4 pF All passive components are of size 0603 unless otherwise noted. VBC = +5 V CAP ID=C4 C=1000 pF C7 is placed at silkscreen marker "2" on WJ's eval board or @ 12.2 deg at 2.14GHZ away from pins 6 and 7. S21 vs. Frequency S11 vs. Frequency S22 vs. Frequency 27 26 S21 (dB) S11 (dB) 25 24 23 +25°C -40°C +85°C 0 -5 -10 S22 (dB) -15 -20 -25 -30 2160 2170 -35 2110 2120 2130 2140 2150 2160 2170 Frequency (MHz) OIP3 vs. Temperature 55 50 45 40 35 -40 freq. = 2140 MHz, 2141 MHz, +15 dBm/tone 0 +25°C -40°C +85°C -5 -10 -15 -20 +25°C -40°C +85°C 22 2110 2120 2130 2140 2150 -25 2110 2120 2130 2140 2150 2160 2170 Frequency (MHz) O 3vs. O tpu P w IP u t o er freq. =2140M z, 2141M z, +25° C H H Frequency (MHz) OIP3 vs. Frequency 55 50 45 40 35 2110 +25° C, +15 dBm/tone 55 50 45 40 35 12 O IP 3 ( d B m ) O IP 3 ( d B m ) OIP3 (dBm) 2120 2130 2140 2150 Frequency (MHz) P1dB vs. Frequency 2160 2170 -15 10 35 Temperature (°C) 60 85 13 14 15 16 O tpu P w (dB ) u t o er m ACLR vs. Channel Power 17 18 Noise Figure vs. Frequency 8 7 6 5 4 A C L R (d B c ) N F (d B ) -40 -45 -50 -55 30 29 P1dB (dBm) 28 27 26 25 2110 Circuit boards are optimized at 2140 MHz 3GPP W -CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz -40°C 2120 2130 +25°C 2140 2150 +85°C 2160 2170 -40°C 3 2110 2120 2130 +25°C 2140 2150 +85°C -60 2160 2170 18 19 -40 C 20 +25 C 21 +85 C 22 Frequency (MHz) Frequency (MHz) Output Channel Power (dBm) Specifications and information are subject to change without notice. WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 6 of 12 August 2006 AH212 Frequency (MHz) Gain (dB) Input Return Loss (dB) Output Return Loss (dB) Output P1dB (dBm) Output IP3 (dBm) (+15 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8 2350 MHz Reference Design for WiBro Applications Typical RF Performance at 25 C 2300 24.5 10 7.5 +30.4 +45 2350 24.4 10 7 +30 +44.3 +5 V 400 mA 2400 24.3 10 6.5 +29.6 +43.7 PORT P=1 Z=50 Ohm Vcc = +5 V All passive componen ts are of size 0603 unless otherwise no ted. CAP ID=C11 C=4.7E6 pF SIZE 1210 CAP ID=C10 C=1000 pF CAP ID=C9 C=22 pF CAP ID=C5 C=1000 pF CAP ID=C6 C=1000 pF RES ID=R2 R=0 Ohm CAP ID=C1 C=22 pF CAP ID=C2 C=6.8 pF IND ID=L1 L=12 nH 8 5 1 2 NET="AH212" 3 4 7 6 6 7 5 8 IND ID=L2 L=15 nH Size 0805 CAP ID=C8 C=22 pF Device / Supply Voltage Quiescent Current PORT P=2 Z=50 Ohm CAP ID=C7 C=2.2 pF RES ID=R1 R=20 Ohm CAP ID=C12 C=1.5 pF RES ID=R3 R=75 Ohm C12 is placed at silkscreen marker "A" on W J's eval Board or @ 4.2 degrees at 2.35 GHz away from pin 3. C7 is placed at silkscreen marker "1" on W J' s eval Board or @ 4.2 degrees at 2.35 GHz away from pin 6 and 7. VBC = + 5 V CAP ID=C4 C=1000 pF S21 vs. Frequency S11 vs. Frequency S22 vs. Frequency 26 25 S21 (dB) S11 (dB) 0 -5 -10 -15 -20 -25 2300 S22 (dB) 0 -5 -10 -15 -20 -25 2300 24 23 22 21 2300 2320 2340 2360 2380 2400 2320 2340 2360 2380 2400 2320 2340 2360 2380 2400 Frequency (MHz) OIP3 vs. Frequency 55 50 45 40 35 2300 +25° C, +15 dBm/tone Frequency (MHz) P1dB vs. Frequency 31 30 P1dB (d Bm) Frequency (MHz) OIP3 (dBm) 29 28 27 26 2300 2320 2340 2360 Frequency (MHz) 2380 2400 2320 2340 2360 2380 2400 Frequency (MHz) Specifications and information are subject to change without notice. WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 7 of 12 August 2006 AH212 Gain 35 The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier Typical Device Data (DFN 4x5 mm) S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads) S11 1.0 6 0. S22 2. 0 0 3. 3. 0 4. Gain (dB) 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 0 15 10 5 0 0.5 1 1.5 Frequency (GHz) 2 2.5 3 -0 .6 0 5.0 10.0 20 .4 -0 0 2. - .4 -0 -0 .6 0 2. S(1,1) A H 212 -0.8 Swp Min 0.01GHz - 1.0 S(2,2) A H2 1 2 -0.8 - Swp Min 0.01GHz - 1.0 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increment. S-Parameters for AH212-EG (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -10.92 -3.48 -0.12 -2.58 -3.56 -8.55 -12.30 -5.21 -4.42 -5.81 -9.68 -22.03 -13.88 -7.86 -5.27 -4.10 -3.60 -112.71 -121.92 -168.99 163.93 147.73 125.39 -155.14 -171.47 164.06 140.51 118.60 121.72 -133.74 -148.71 -164.02 -176.86 174.71 14.75 22.90 27.45 26.41 25.52 28.69 29.61 28.43 26.63 25.16 23.77 22.15 20.27 18.12 16.09 14.35 12.79 95.57 70.25 14.93 -53.73 -62.82 -95.79 -147.37 167.21 132.05 99.97 67.69 34.69 2.51 -28.03 -56.46 -85.23 -117.50 -73.98 -70.46 -67.96 -60.92 -59.17 -54.90 -55.92 -55.39 -56.48 -57.72 -60.00 -60.00 -55.39 -50.75 -48.64 -47.96 -47.13 47.38 9.54 94.09 47.82 67.34 49.69 32.50 23.93 3.83 -6.10 -86.34 -166.62 157.88 130.86 115.31 96.72 90.37 -2.62 -2.87 -2.87 -1.39 -1.19 -1.51 -1.54 -1.50 -1.61 -1.61 -1.58 -1.43 -1.39 -1.27 -1.27 -1.27 -1.24 -143.22 -160.44 -166.36 -168.43 -177.07 179.99 179.91 177.74 175.61 173.57 171.97 169.44 166.52 162.89 159.59 156.84 154.34 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” FR4, four layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitor – C7. The markers and vias are spaced in 0.050” increments. Specifications and information are subject to change without notice. WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 8 of 12 August 2006 -4 .0 -5 .0 -3 .0 -4 .0 -5 .0 2 -0. 2 -0. -10.0 0.2 -10.0 -3 . 0 0.2 25 0 5. 0. 4 0. 4 30 DB(|S(2,1)|) A H 212 6 0. Sw p M a x 3 GH z 1.0 Sw p M a x 3 GH z 2. 0 0.8 0.8 0 0 4. 0 5. 10.0 AH212 Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+15 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier 1960 MHz Application Circuit (AH212-EPCB1960) Typical RF Performance at 25 C 1960 MHz 27 dB 16 dB 10 dB +30.5 dBm +46.5 dBm +24.5 dBm 5.5 dB +5 V 400 mA Channel Power (@-45 dBc ACPR, IS-95, 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current S21 vs. Frequency S11 vs. Frequency S22 vs. Frequency 30 +25°C -40°C +85°C 0 +25°C -40°C +85°C 0 -5 S22 (dB) 29 S21 (dB) -5 S11 (dB) 28 27 26 25 1930 -10 -15 -20 -25 1930 -10 -15 -20 +25°C -40°C +85°C 1940 1950 1960 1970 1980 1990 1940 1950 1960 1970 1980 1990 -25 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) Supply Bias vs. Temperature 450 430 OIP3 (dBm) OIP3 (dBm) Frequency (MHz) OIP3 vs. Output Power 55 50 45 40 35 freq. = 1960 MHz, 1961 MHz, +25° C Frequency (MHz) OIP3 vs. Temperature 55 50 45 40 35 freq. = 1960 MHz, 1961 MHz, +15 dBm/tone 410 390 370 350 -4 0 -1 5 10 35 Temperature (°C) P1dB vs. Frequency 60 85 12 13 14 15 16 Output Power (dBm) Noise Figure vs. Frequency 17 18 OIP3 (dBm) -4 0 -15 10 35 Temperature (°C) ACPR vs. Channel Power 60 85 31 30 P1dB (dBm) Circuit boards are optimized at 1960 MHz 7 -3 5 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz 6 ACPR (dBc) 29 28 27 26 1930 -40°C +25°C +85°C NF (dB) 5 4 3 -4 0 ° C +25°C +85°C -4 5 -5 5 -6 5 -4 0 C -7 5 +25 C 23 24 +85 C 25 26 1940 1950 1960 1970 1980 1990 2 1900 1920 1940 1960 1980 2000 18 19 20 21 22 Frequency (MHz) Frequency (MHz) Output Channel Power (dBm) Specifications and information are subject to change without notice. WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 9 of 12 August 2006 AH212 FreFrequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+15 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier 2140 MHz Application Circuit (AH212-EPCB2140) Typical RF Performance at 25 C 2140 MHz 25.5 dB 24 dB 9 dB +30.5 dBm +46 dBm +22 dBm 6 dB +5 V 400 mA Channel Power (@-45 dBc ACPR, IS-95, 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current S21 vs. Frequency S11 vs. Frequency S22 vs. Frequency 28 27 S21 (dB) S11 (dB) 0 -5 -10 -15 -20 -25 +25°C -40°C +85°C +25°C -40°C +85°C 0 -5 S22 (dB) 26 25 24 23 2110 -10 -15 -20 +25°C -40°C +85°C 2120 2130 2140 2150 2160 2170 -30 2110 2120 2130 2140 2150 2160 2170 -25 2110 2120 2130 2140 2150 2160 2170 Frequency (MHz) Supply Bias vs. Temperature 450 430 OIP3 (dBm) OIP3 (dBm) Frequency (MHz) OIP3 vs. Output Power 55 50 45 40 35 freq. = 2140 MHz, 2141 MHz, +25° C Frequency (MHz) OIP3 vs. Temperature 55 50 45 40 35 freq. = 2140 MHz, 2141 MHz, +15 dBm/tone 410 390 370 350 -4 0 -1 5 10 35 Temperature (°C) P1dB vs. Frequency 60 85 12 13 14 15 16 Output Power (dBm) Noise Figure vs. Frequency 17 18 OIP3 (dBm) -4 0 -15 10 35 Temperature (°C) ACLR vs. Channel Power 60 85 31 30 P1dB (dBm) Circuit boards are optimized at 2140 MHz 8 7 6 5 4 -4 0 ° C +25°C +85°C ACLR (dBc) 3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz -4 0 -4 5 -5 0 -5 5 -4 0 C -6 0 +25 C 22 +85 C 23 24 29 28 27 26 2110 -40°C +25°C +85°C NF (dB) 2120 2130 2140 2150 2160 2170 3 2110 2120 2130 2140 2150 2160 2170 18 19 20 21 Frequency (MHz) Frequency (MHz) Output Channel Power (dBm) Specifications and information are subject to change without notice. WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 10 of 12 August 2006 AH212 The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8G (Lead-Free SOIC-8 Package) Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an “AH212G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1B Passes 500V to