AH215-S8G

AH215 / ECP100G 1 Watt, High Gain HBT Amplifier Product Information Product Features • 400 – 2300 MHz • +31.5 dBm P1dB • +46 dBm Output IP3 • 18 dB Gain @ 900 MHz • Single Positive Supply (+5 V) • Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg. Product Description The AH215 / ECP100 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB power. The part is housed in a lead-free/green/RoHScompliant SOIC-8 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and UMTS, where high linearity and high power is required. The internal active bias allows the AH215 / ECP100 to maintain high linearity over temperature and operate directly off a +5 V supply. Functional Diagram 1 8 7 6 5 2 3 4 Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure • Defense / Homeland Security Function Vref Input Output Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 Specifications (1) Parameters Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure IS-95 Channel Power @ -45 dBc ACPR, 1960MHz Typical Performance (4) Units Min MHz MHz dB dB dB dBm dBm dB dBm dBm mA V 400 400 10 2140 11 18 8 +31.5 +45 6.3 +25.5 +23 450 5 500 Typ Max 2300 Parameters Frequency S21 – Gain S11 S22 Output P1dB Output IP3 IS-95A Channel Power @ -45 dBc ACPR @ -45 dBc ACPR Units MHz dB dB dB dBm dBm dBm dBm dB 7.0 900 18 -13 -7 +31 +46 +25.5 Typical 1960 12 -11 -10 +32 +46 +25.5 +23 5.5 6.2 +5 V @ 450 mA 2140 11 -18 -8 +31.5 +45 +29 +43.8 W-CDMA Channel Power Noise Figure Supply Bias W-CDMA Channel Power @ -45 dBc ACPR, 2140 MHz Operating Current Range , Icc (3) Device Voltage, Vcc 4. Typical parameters reflect performance in a tuned application circuit at +25° C. 1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 10.8 mA of current when used with a series bias resistor of R1=51 Ω . (ie. total device current typically will be 461 mA.) Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature Ordering Information Part No. AH215-S8* ECP100G* AH215-S8G AH215-S8PCB900 AH215-S8PCB1960 AH215-S8PCB2140 Rating -40 to +85 °C -65 to +150 °C +26 dBm +8 V 900 mA 5W +250 °C Description 1 Watt, High Linearity InGaP HBT Amplifier (lead-tin SOIC-8 Pkg) 1 Watt, High Linearity InGaP HBT Amplifier (lead-tin SOIC-8 Pkg) 1 Watt, High Linearity InGaP HBT Amplifier (lead-free/green/RoHS-compliant SOIC-8 Pkg) 900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. * This package is being phased out in favor of the green package type which is backwards compatible for existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 1 of 9 June 2005 AH215 / ECP100G 1 Watt, High Gain HBT Amplifier Product Information Typical Device Data S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25°C, calibrated to device leads) 1.0 0.8 0.8 40 35 30 25 Gain (dB) 20 15 6 0. 6 0. Swp Max 5.05GHz 2. 0 1.0 Gain and Maximum Stable Gain DB(|S[2,1]|) DB(GMax) 0. 4 S11 S22 Swp Max 5.05GHz 2. 0 0 3. 0 4. 0.2 0 5. 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 10 5 0 -5 -10 0 0.5 1 1.5 Frequency (GHz) 2 2.5 0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 -0 .4 . -0 4 .0 -2 -0 .6 -0 .6 -0.8 .0 -2 -0.8 Swp Min 0.05GHz Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance loss plots are shown from 0.05 – 5.05 GHz, with markers placed in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25°C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -1.23 -1.01 -1.01 -1.03 -1.21 -1.34 -1.52 -2.00 -2.65 -3.86 -6.72 -14.09 -9.98 -4.27 -2.13 -1.24 -0.82 -177.95 178.17 172.63 163.72 155.20 146.17 136.69 126.65 115.04 97.52 86.05 94.99 166.89 157.68 142.95 130.88 120.68 24.07 19.55 15.55 12.03 9.86 8.11 6.92 6.13 5.80 6.01 6.17 6.15 4.98 2.52 -0.42 -3.40 -6.09 122.55 116.55 112.97 98.68 85.80 73.18 61.43 49.60 37.55 21.48 1.700 -23.83 -52.92 -80.08 -100.8 -116.44 -128.99 -1.0 -40.25 -39.49 -40.13 -38.83 -39.30 -37.70 -37.73 -37.14 -36.23 -36.45 -34.63 -35.91 -36.75 -39.10 -37.80 -38.58 -39.37 17.32 10.63 15.98 10.31 -4.249 -2.398 -16.27 -14.34 -28.50 -46.08 -68.99 -100.68 -147.66 171.86 123.26 89.55 67.22 -1.26 -1.33 -1.17 -0.93 -0.66 -0.83 -0.95 -1.05 -1.04 -1.11 -1.10 -1.00 -0.77 -0.79 -0.81 -0.84 -0.92 -1.0 -130.4 -155.43 -169.92 179.61 173.43 168.67 166.34 165.13 164.55 166.24 164.44 162.35 158.42 154.12 149.03 144.09 138.4 Application Circuit PC Board Layout Circuit Board Material: Top RF layer is .014” Getek, 4 total layers (0.062” thick) for mechanical rigidity 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 2 of 9 June 2005 -4 .0 -5. 0 -3 . 0 -4 .0 -5. 0 2 -0. 2 -0. Swp Min 0.05GHz -10. 0 0. 4 3. 0 0 4. 5.0 -10. 0 -3 .0 0. 2 10.0 AH215 / ECP100G 1 Watt, High Gain HBT Amplifier Product Information 900 MHz Application Circuit (AH215-S8PCB900) Typical RF Performance at 25°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+15 dBm / tone, 1 MHz spacing) 900 MHz 18 dB -13 dB -7.0 dB +31 dBm +46 dBm +25.5 dBm 7.0 dB +5 V 450 mA Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S21 vs. Frequency (MHz) 20 18 S21 (dB) S11 (dB) S11 vs. Frequency 0 -4 -8 -12 -16 -20 840 +25°C +85°C -40°C 860 880 900 920 940 S22 (dB) S22 vs. Frequency 0 -4 -8 -12 -16 -20 840 +25°C +85°C -40°C 860 880 900 920 940 16 14 12 10 8 840 860 +25°C +85°C -40°C 880 900 920 940 Frequency (MHz) Frequency (MHz) Frequency (MHz) Noise Figure vs. Frequency 10 9 NF (dB) P1 dB vs. Frequency 34 32 P1 dB (dBm) ACPR (dBc) ACPR vs. Channel Power IS-95, 9 Ch. Fwd, ±885 KHz offset, 30 KHz Meas BW, 900 MHz -40 -45 -50 -55 -60 -65 +25°C +85°C -40°C 8 7 6 5 840 +25°C +85°C -40°C 860 880 900 920 940 30 28 26 24 840 +25°C +85°C -40°C 860 Frequency (MHz) 880 900 Frequency (MHz) 920 940 -70 19 20 21 22 23 24 25 Output Channel Power (dBm) 26 27 OIP3 vs. Output Power freq. = 900, 901 MHz, +25°C OIP3 vs. Temperature 50 47 OIP3 (dBm) OIP3 (dBm) OIP3 vs. Frequency 50 47 44 41 38 35 840 +25°C, +15 dBm / tone 50 47 OIP3 (dBm) freq. = 900, 901 MHz, +15 dBm 44 41 38 35 10 13 16 19 Output Power (dBm) 22 25 44 41 38 35 -40 -15 10 35 Temperature (°C ) 60 85 860 880 900 Frequency (MHz) 920 940 Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 3 of 9 June 2005 AH215 / ECP100G 1 Watt, High Gain HBT Amplifier Product Information 1960 MHz Application Circuit (AH215-S8PCB1960) Typical RF Performance at 25°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+17 dBm / tone, 1 MHz spacing) 1960 MHz 12 dB -11 dB -10 dB +32 dBm +46 dBm +25.5 dBm 5.5 dB +5 V 450 mA Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S21 vs. Frequency 18 16 S21 (dB) S11 (dB) S11 vs. Frequency 0 -5 -10 -15 -20 +25°C +85°C -40°C 1940 1950 1960 1970 1980 1990 S22 (dB) S22 vs. Frequency 0 -5 -10 -15 -20 -25 1930 +25 °C +85 °C -40°C 1940 1950 1960 1970 1980 1990 14 12 10 8 1930 +25°C +85°C -40°C 1940 1950 1960 1970 1980 1990 -25 1930 Frequency (MHz) Frequency (MHz) Frequency (MHz) Noise Figure vs. Frequency 8 7 NF (dB) P1 dB vs. Frequency 35 33 P1 dB (dBm) ACPR (dBc) ACPR vs. Channel Power IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas BW, 1960 MHz 6 5 4 3 2 1 0 1930 1940 +25°C +85°C -40°C 1950 1960 1970 1980 1990 31 29 27 25 1930 +25°C +85°C -40°C 1940 1950 1960 1970 1980 1990 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 +25°C +85°C -40°C Frequency (MHz) Frequency (MHz) OIP3 vs. Frequency +25°C, 15 dBm / tone 15 16 17 18 19 20 21 22 23 24 25 26 27 Output Channel Power (dBm) OIP3 vs. Temperature freq. = 1960, 1961 MHz, +15 dBm OIP3 vs. Output Power freq. = 1960, 1961 MHz, +25°C 55 50 OIP3 (dBm) 55 51 47 43 39 OIP3 (dBm) 50 46 42 38 34 30 -40 -15 10 35 Temperature ( °C) 60 85 10 12 14 16 18 Output Power (dBm) 20 22 OIP3 (dBm) 45 40 35 1930 1940 1950 1960 1970 1980 1990 35 Frequency (MHz) Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 4 of 9 June 2005 AH215 / ECP100G 1 Watt, High Gain HBT Amplifier Product Information 2140 MHz Application Circuit (AH215-S8PCB2140) Typical RF Performance at 25°C Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+15 dBm / tone, 1 MHz spacing) 2140 MHz 11 dB -18 dB -8.0 dB +31.5 dBm +45 dBm +23 dBm 6.2 dB +5 V 450 mA Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S21 vs. Frequency 15 12 S21 (dB) S11 (dB) S11 vs. Frequency -10 -14 -18 -22 -26 -30 2110 +25°C +85°C -40°C 2120 2130 2140 2150 2160 2170 -20 2110 S22 (dB) S22 vs. Frequency 0 -5 -10 +25°C -15 +85°C -40°C 2120 2130 2140 2150 2160 2170 9 6 3 0 2110 +25°C +85°C -40°C 2120 2130 2140 2150 2160 2170 Frequency (MHz) Frequency (MHz) Frequency (MHz) Noise Figure vs. Frequency 9 8 7 6 5 4 3 2 1 0 2110 34 32 P1 dB (dBm) P1 dB vs. Frequency -40 -45 ACPR (dBc) ACPR vs. Channel Power 3GPP W-CDMA, Test Model 1+64 DPCH, ±5MHz offset, 2140 MHz NF (dB) 30 28 26 24 2110 +25°C +85°C -40°C -50 -55 -60 +25°C +85°C -40°C +25°C +85°C -40°C 2120 2130 2140 2150 2160 2170 2120 2130 2140 2150 2160 2170 -65 19 20 21 22 23 Output Channel Power (dBm) 24 Frequency (MHz) Frequency (MHz) OIP3 vs. Temperature 50 47 OIP3 (dBm) OIP3 (dBm) OIP3 vs. Frequency +25°C, +15 dBm / tone freq. = 2140, 2141 MHz, +15 dBm / tone OIP3 vs. Output Power freq. = 2140, 2141 MHz, 25°C 50 47 44 41 38 35 2110 OIP3 (dBm) 50 47 44 41 38 35 2120 2130 2140 2150 Frequency (MHz) 2160 2170 10 12 14 16 18 Output Power (dBm) 20 22 44 41 38 35 -40 -15 10 35 Temperature (°C ) 60 85 Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 5 of 9 June 2005 AH215 / ECP100G 1 Watt, High Gain HBT Amplifier Product Information Application Note: Reduced Bias Configurations The AH215 / ECP100 can be configured to be operated with lower bias current by varying the bias-adjust resistor – R1. The recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH215 / ECP100 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. AH215-PCB2140 Performance Data R1 (ohms) 51 68 100 130 180 Icq (mA) 450 400 350 300 250 Pdiss (W) 2.25 2.00 1.75 1.50 1.25 P1dB (dBm) +31.0 +30.9 +30.8 +30.6 +30.5 OIP3 (dBm) +47.1 +46.4 +46.4 +45.5 +43.6 11.5 11 2.14GHz Gain vs. Output Power 50 2.14GHz OIP3 vs. Output Power per Tone 45 10 9.5 9 8.5 16 OIP3 (dBm) Gain (dB) 10.5 Idq=450mA 'Class A' Idq=400mA Idq=350mA Idq=300mA Idq=250mA 40 Idq=450mA 'Class A' Idq=400mA 35 Idq=350mA Idq=300mA Idq=250mA 30 18 20 22 24 26 28 30 32 10 12 14 16 18 20 22 24 Output Power (dBm) W-CDMA ACLR vs. Output Channel Power 3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset Power Out per Tone (dBm) 100 CW PAE vs. Output Power Idq=450mA 'Class A' Idq=400mA Idq=350mA Idq=300mA Idq=250mA -35 Idq=450mA 'Class A' -40 Idq=400mA Idq=300mA Idq=250mA ACLR (dBc) -45 -50 -55 -60 -65 12 PAE (%) Idq=350mA 10 1 14 16 18 20 22 24 16 18 20 22 24 26 28 30 32 W-CDMA Channel Power Out (dBm) CW Tone Power Out (dBm) Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 6 of 9 June 2005 AH215 / ECP100G 1 Watt, High Gain HBT Amplifier Product Information AH215-S8 (SOIC-8 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Outline Drawing Product Marking The component will be marked with an “AH215-S8” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes /500V to