AP501-PCB

AP501 Product Features • 1930 – 1990 MHz • 32.5 dB Gain • +36 dBm P1dB • -62 dBc ACPR @ 27 dBm IS-95A linear power The Communications Edge TM Product Information PCS-band 4W HBT Amplifier Module Product Description The AP501 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 32.5 dB gain, while being able to achieve high performance for PCS-band applications with +36 dBm of compressed 1dB power. The module has been internally optimized for driver applications provide -62 dBc ACPR at 27 dBm for IS-95A applications or -55 dBc ACLR at 26.5 for wCDMA applications. The module can be biased down for current when higher efficiency is required. The AP501 uses a high reliability InGaP/GaAs HBT process technology and does not require any external matching components. The module operates off a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. A low-cost metal housing allows the device to have a low thermal resistance to ensure long lifetimes. All devices are 100% RF and DC tested. Functional Diagram 1 2 3 4 5 6 • -55 dBc ACLR @ 26.5 dBm wCDMA linear power Top View Pin No. 1 2/4 3/5 6 Case Function RF Output Vcc Vpd RF Input Ground • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg Applications • Final stage amplifiers for repeaters • Optimized for driver amplifier The AP501 is targeted for use as a driver or final stage amplifier PA mobile infrastructure in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations. Specifications 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture Typical Performance (4) Units Min Typ Max Parameter Operating Current @ 27 dBm Quiescent Current, Icq Device Voltage, Vcc R7 value Test Frequency Power Gain IS-95A ACPR @ 27dBm (1) wCDMA ACLR @ 26.5dBm (2) Input Return Loss Output Return Loss Output P1dB Output IP3 Parameter Units Config1 Config2 mA mA V Ω MHz dB dBc dBc dB dB dBm dBm 840 820 +12 0 1960 32.4 -61.8 -55 22 6 +36 +52 420 250 +12 730 1960 30.5 -53 -49 20 8 +36 +52 Operational Bandwidth MHz Test Frequency MHz Power Gain dB IS-95A ACPR @ 27dBm (1) dBc wCDMA ACLR @ 26.5dBm (2) dBc Input Return Loss dB Output Return Loss dB Output P1dB dBm Output IP3 dBm Operating Current @ 27 dBm mA Quiescent Current, Icq mA Device Voltage, Vcc V Device Voltage, Vpd (3) V Load Stability VSWR 1930 – 1990 1960 30 32.4 30.5 -61.8 -55 -55 22 6 +36 +52 790 840 940 780 820 920 +12 +5 10:1 4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet. Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture. Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet. Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=250mA, R7=730Ω, 50Ω tuned fixture. 1. IS-95A signal modulation, 9 channels forward, 1.23 MHz BW, ±885 kHz offset. 2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset. 3. Pull-down voltage: 0V = “OFF”, 5V=”ON” Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) with output terminated in 50 Ω -40 to +85 °C -55 to +150 °C +15 dBm Rating Ordering Information Part No. AP501 AP501-PCB Description PCS-band 4W HBT Amplifier Module Fully-Assembled Evaluation Board (Class AB configuration, Icq=820mA) Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 1 of 5 February 2006 AP501 The Communications Edge TM Product Information PCS-band 4W HBT Amplifier Module Performance Graphs – Class AB Configuration (AP501-PCB) The AP501-PCB and AP501 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for the amplifier is set at 0 Ω in this configuration. Increasing that value will decrease the quiescent and operating current of the amplifier module, as described on the next page. +12V GND +12V 10μF +5V DNP 0Ω 0Ω DNP 100pF DNP .01μF DNP RF IN 0Ω DNP DNP 6 .01μF DNP 100pF RF OUT 0Ω Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. Details of the mounting holes used in the WJ heatsink are given on the last page of this datasheet. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing should be followed: a. Connect RF In and Out b. Connect the voltages and ground pins as shown in the circuit. c. Apply the RF signal d. Power down with the reverse sequence 5 4 3 2 1 DNP DNP Narrowband S-Parameters +25 °C, Icq=850mA PAE / Icc vs. Output Power 0 -5 S 1 1 , S 2 2 (d B ) Gain / Output Power vs. Input Power 25 20 P o u t (d B m ) 15 10 5 0 P A E (% ) 36 34 32 30 28 26 -6 -4 -2 0 2 4 6 Input Power (dBm) ACLR vs. Channel Power +25°C, 3GPP wCDMA, 1FA, 1+32 DPCH, ±5 MHz offset, 1960 MHz, Icq=850mA 33 32 S 2 1 (d B ) 31 30 29 28 27 1930 1950 1970 1000 950 Ic c ( m A ) 900 850 800 750 24 1960 MHz, +25 °C, Icq=850mA 1960 MHz, +25 °C, Icq=850mA Icc PAE 32.5 32 31.5 31 Pout Gain 30.5 30 G a in ( d B ) 28 S21 S11 S22 -10 -15 -20 -25 -30 1990 26 28 30 32 34 Frequency (MHz) Output Power (dBm) ACPR vs. Channel Power IS-95A, 9 Channels forward, 1FA, 1960 MHz, Icq=850mA Wideband S-Parameters +25 °C, Icq=850mA 40 M a g n itu d e ( d B ) 20 0 -20 -40 0 A C P R (d B c ) A C L R (d B c ) S21 S11 S22 -50 -60 -70 -80 -90 ±885 kHz ±1.25 MHz -40 -40 C -50 +25 C +85 C -60 -70 22 23 24 25 26 27 28 18 20 22 24 26 Output Channel Power (dBm) Output Channel Power (dBm) Specifications and information are subject to change without notice 500 1000 1500 2000 2500 3000 Frequency (MHz) WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 2 of 5 February 2006 AP501 The Communications Edge TM Product Information PCS-band 4W HBT Amplifier Module Performance Graphs – Class B Configuration The AP501 can be adjusted to operate at lower current biasing levels by modifying the R7 resistor for improved efficiency performance. The configuration shown on this page has the AP501 operating with Icq = 250 mA (Icc = 400 mA @ 27 dBm). Output L-C matching components have been added externally on the circuit to optimize the amplifier for ACPR performance at this biasing configuration. +12V GND +12V 10μF +5V DNP 0Ω 730Ω DNP 100pF DNP .01μF DNP RF IN 0Ω DNP DNP 6 .01μF DNP 100pF RF OUT 2.2nH 5 4 3 2 1 DNP R2 0.2pF Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. Details of the mounting holes used in the WJ heatsink are given on the last page of this datasheet. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing should be followed: a. Connect RF In and Out b. Connect the voltages and ground pins as shown in the circuit. c. Apply the RF signal d. Power down with the reverse sequence Narrowband S-Parameters +25 °C, Icq=250mA PAE / Icc vs. Output Power +25 °C, 1960 MHz, Icq=250mA OIP3 / IMD vs. Output Power 50% 31 30 S 2 1 (d B ) 29 28 27 26 1930 0 -5 S 1 1 , S 2 2 (d B ) 500 -20 -30 P A E (d B m ) +25 °C, 1960 MHz, Icq=250mA 55 50 45 40 35 O IP 3 ( d B m ) Icc 400 PAE 40% IM D ( d B c ) Ic c ( m A ) -10 S21 S11 -15 S22 -20 -25 1990 300 200 100 0 24 25 26 27 28 29 30 Output Power (dBm) 30% 20% 10% 0% -40 -50 -60 IMD -70 22 24 26 28 30 Output Power / tone (dBm) ACLR vs. Channel Power OIP3 30 1950 1970 Frequency (MHz) ACPR vs. Channel Power ACPR vs. Channel Power +25 °C, IS-95A, 9 Ch. Fwd, 7FA, fo=1935 MHz, Icq=250mA -40 +25 °C, IS-95A, 9 Ch. Fwd, 1FA, fo=1960 MHz, Icq=250mA ±885 kHz -40 -40 +25 °C, 3GPP W-CDMA, Test Model 1+32 DPCH, 1960 MHz, Icq=250mA ±885 kHz A C P R (d B c ) A C L R (d B c ) A C P R (d B c ) -50 ±1.25 MHz -50 ±1.25 MHz ±5 MHz ±10 MHz -50 -60 -60 -60 -70 25 26 27 28 29 30 31 Output Channel Power (dBm) -70 18 19 20 21 22 23 24 25 Output Channel Power (dBm) -70 20 21 22 23 24 25 26 27 28 Output Channel Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 3 of 5 February 2006 AP501 The Communications Edge TM Product Information PCS-band 4W HBT Amplifier Module MTTF Calculation The MTTF of the AP501 can be calculated by first determining how much power is being dissipated by the amplifier module. Because the device’s intended application is to be a power amplifier pre-driver or final stage output amplifier, the output RF power of the amplifier will help lower the overall power dissipation. In addition, the amplifier can be biased with different quiescent currents, so the calculation of the MTTF is custom to each application. The power dissipation of the device can be calculated with the following equation: Pdiss = Vcc * Icc – (Output RF Power – Input RF Power), Vcc = Operating supply voltage = 12V Icc = Operating current {The RF power is converted to Watts} While the maximum recommended case temperature on the datasheet is listed at 85 ˚C, it is suggested that customers maintain an MTTF above 1 million hours. This would convert to a derating curve for maximum case temperature vs. power dissipation as shown in the plot below. Maximum Recommended Case Temperature vs. Power Dissipation to maintain 1 million hours MTTF 90 Maximum Case Temperature (°C) To calculate the MTTF for the module, the junction temperature needs to be determined. This can be easily calculated with the module’s power dissipation, the thermal resistance value, and the case temperature of operation: Tj = Pdiss * Rth + Tcase Tj = Junction temperature Pdiss = Power dissipation (calculated from above) Rth = Thermal resistance = 9 ˚C/W Tcase = Case temperature of module’s heat sink From a numerical standpoint, the MTTF can be calculated using the Arrhenius equation: MTTF = A* e(Ea/k/Tj) A = Pre-exponential Factor = 6.087 x 10-11 hours Ea = Activation Energy = 1.39 eV k = Boltzmann’s Constant = 8.617 x 10-5 eV/ ºK Tj = Junction Temperature (ºK) = Tj (ºC) + 273 A graphical view of the MTTF can be shown in the plot below. MTTF vs. Junction Temperature 1.E+07 MTTF (hours) 80 1.E+06 70 60 50 4 5 6 7 8 9 10 11 12 Power Dissipation (Watts) 1.E+05 130 140 150 160 170 180 Junction Temperature (°C) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 4 of 5 February 2006 AP501 The Communications Edge TM Product Information PCS-band 4W HBT Amplifier Module Outline Drawing AP501 1 2 3 4 5 6 Outline Drawing for the Heatsink with the WJ Evaluation Board Product Marking The device will be marked with an “AP501” designator with an alphanumeric lot code on the top surface of the package noted as “ABCD” on the drawing. A manufacturing date will also be printed as “XXYY”, where the “XX” represents the week number from 1 – 52. The product will be shipped in tubes in multiples of 15. ESD / MSL Information ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1C Passes at ≥ 1,000 to < 2,000 volts Human Body Model (HBM) JEDEC Standard JESD22-A114 Class III Passes ≥ 500 to < 1,000 volts Charged Device Model (CDM) JEDEC Standard JESD22-C101 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 5 of 5 February 2006