High Dynamic Range FET
FH1
The Communications Edge TM Product Information
Product Features
x x x x x x x 50 – 3000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package x MTTF > 100 years
Product Description
The FH1 is a high dynamic range FET packaged in a lowcost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85 qC. The FH1 is available the enviornmentally-friendly lead-free/green/RoHS-compliant SOT-89 package. The device utilizes a high reliability GaAs MESFET technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the FH1 will work for other applications within the 50 to 3000 MHz frequency range such as fixed wireless.
Functional Diagram
4
1
2
3
Function Gate Drain Source
Pin No. 1 3 2, 4
Applications
x x x x Mobile Infrastructure CATV / DBS W-LAN / ISM Defense / Homeland Security
Specifications (1)
DC Electrical Parameter
Saturated Drain Current, Idss (2) Transconductance, Gm Pinch-off Voltage, Vp (3)
Typical Performance (6)
Units Min
mA mS V 100 -3
Typ
140 120 -1.5
Max
170
Parameter
Frequency S21 S11 S22 Output IP3 (4) Output P1dB Noise Figure Drain Bias Gate Voltage
Units
MHz dB dB dB dBm dBm dB V 900 19 -11 -10 +42 +21.8 2.7
Typical
1960 2140 16.5 16.5 -20 -22 -9 -9 +40 +40 +22.1 +22.1 3.1 3.0 5V @ 140mA 0
RF Parameter
Operational Bandwidth Test Frequency Small-signal Gain, Gss Max Stable Gain, Gmsg Output IP3 (4) P1dB Minimum Noise Figure (5) Drain Bias Gate Bias
¢ ¡
Units Min
MHz MHz dB dB dBm dBm dB V V
Typ
Max
50 – 3000 800 17 18 23 +38 +42 +21 0.77 +5 0
6. The device requires appropriate matching to become unconditionally stable. Parameters reflect performance in an appropriate application circuit.
1. DC and RF parameters are measured under the following conditions unless otherwise noted: 25 C with Vds = 5V, Vgs = 0V, in a 50 system. 2. Idss is measured with Vgs = 0V. 3. Pinch-off voltage is measured with Ids = 0.6 mA. 4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 5. The minimum noise figure has S = L = OPT.
Absolute Maximum Rating
Operating Case Temperature Storage Temperature Drain to Source Voltage Gate to Source Voltage Gate Current RF Input Power (continuous) Junction Temperature
Parameter
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
£
£
£
-40 to +85 qC -55 to +150 qC +7 V -6 V 4.5 mA 4 dB above Input P1dB +220 qC
Rating
Ordering Information
Part No.
FH1-G
Description
High Dynamic Range FET
(lead-free/green/RoHS-compliant SOT-89 package)
FAX: 408-577-6621
e-mail: sales@wj.com
W eb site: www.wj.com
Page 1 of 7 July 2006
High Dynamic Range FET
FH1
The Communications Edge TM Product Information
Data is shown at a biasing configuration of VDS = +5 V, IDS = 140 mA, 25 C for the unmatched device in a 50 ohm system)
1.0
1.0
Typical Device Data
S11
0.8
6 0.
6 0.
24 22 S21 and MSG (dB) 20 18
0 3.
0 4.
0.2 5.0
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
16
-5. 0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
10.0
12 0 1 Frequency (GHz) 2 3
.4 -0
.4 -0
Swp Min 0.01GHz
-0 .6
-0 .6
.0 -2
.0 -2
Swp Min 0.01GHz
-0.8
-0.8
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, as high as the maximum stable gain. The maximum stable gain is shown in the red line. The impedance plots are shown from 10 – 6000 MHz, with markers placed at 0.5 – 6.0 GHz in 0.5 GHz increments.
Output IP3 vs. Temperature Output IP3 vs. Output Power Noise Figure vs. Frequency NF (unmatched device) Minimum NF
45 40 35 30
45 40 35 30
-1.0
2.5
Noise Figure (dB)
2 1.5 1 0.5 0
OIP3 (dBm)
5V 100% Idss
OIP3 (dBm)
5V 100% Idss
25 -40 -15 10 35 60 85 Temperature ( C)
25 0 2 4 6 8 10 12 Output Power per tone (dBm)
0.5
1
-1.0
1.5
Frequency (GHz)
S-Parameters (VD = +5 V, ID = 140 mA, VG = 0 V, 25 C, calibrated to device leads)
S11 (ang) S21 (dB) S21 (ang)
Freq (MHz)
S11 (dB)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000
0.00 -0.13 -0.34 -0.55 -0.83 -1.16 -1.50 -1.80 -2.03 -2.25 -2.37 -2.55 -2.62
-4.08 -19.64 -39.41 -58.33 -75.93 -93.29 -110.36 -125.64 -140.92 -155.64 -169.80 177.26 165.93
19.36 19.19 18.85 18.47 17.95 17.47 16.82 16.21 15.65 15.05 14.42 13.74 13.18
176.06 164.65 150.19 136.21 123.24 110.92 99.18 88.19 77.53 67.15 57.62 48.11 39.86
-51.05 -37.15 -31.34 -28.24 -26.22 -24.88 -23.95 -23.27 -22.81 -22.39 -22.25 -22.08 -22.01
¦
87.96 78.37 66.75 55.74 45.25 35.22 26.69 18.17 9.87 2.11 -4.68 -11.35 -17.16
-4.38 -4.52 -4.77 -5.19 -5.77 -6.44 -7.14 -7.94 -8.84 -9.57 -10.43 -11.43 -12.30
-3.34 -11.51 -22.43 -33.05 -43.46 -53.09 -61.08 -69.92 -78.43 -86.41 -93.92 -101.88 -108.95
Noise Parameters (VD = +5 V, ID = 140 mA, VG = 0 V, 25 C, calibrated to device leads)
Freq (MHz) NF,min (dB) MagOpt (mag) AngOpt (deg) Rn
700 800 900 1000 1100 1200 1300 1400
0.51 0.77 0.66 0.74 0.85 0.85 0.95 1.07
0.574 0.535 0.508 0.488 0.463 0.458 0.446 0.450
32.8 37.4 44.1 50.4 56.4 62.0 67.3 73.3
0.403 0.409 0.379 0.365 0.357 0.345 0.335 0.323
Device S-parameters and noise are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
W eb site: www.wj.com
Page 2 of 7 July 2006
-4 .0
-3 .0
-5.
-4 .0
0
14
-0.
2
-0.
2
-10. 0
0. 4
-10.0
-3 .0
¦
0. 4
DB(GMax())
2. 0
2. 0
DB(|S(2,1)|)
0.8
Gain and Max. Stable Gain
¤
S22
Swp Max 6GHz Swp Max 6GHz
0 3.
0 4.
5.0
0.2
10.0
2
¥
High Dynamic Range FET
FH1
The Communications Edge TM Product Information
Reference Design: 35 MHz, 17 dB Gain
Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current MHz dB dB dB dBm dBm dB V mA
ID=R6 R=390 Ohm
Gain (dB)
16
-10
15
-15
4.0
3.2
14
-20
13 25 30 35 Frequency (MHz) 40 45
-25
ID=C6 C=1000 pF
ID=R7 R=390 Ohm
+5V
ID=C3 C=1000 pF
NET="FH1" ID=C1 R=3.9 Ohm ID=R1 C=68 pF
1 2
ID=L1 L=470 nH
ID=C2 C=1000 pF ID=R8 L=390 nH
Notes: 1. r 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Reference Design: 170 MHz, 14 dB Gain
Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current
ID=R6 R=240 Ohm
MHz dB dB dB dBm dBm dB V mA
13
-20
2.7
2.7
12
-30
11 0.12 0.14 0.16 0.18 Frequency (GHz) 0.2 0.22
-40
ID=C6 ID=R7 C=1000 pF R=240 Ohm
+5V
ID=C3 C=1000 pF
NET="FH1" ID=R1 C=24 pF
1 2
ID=L1 L=220 nH
ID=R2 R=4 Ohm ID=R8 L=82 nH
ID=C2 C=1000 pF
Notes: 1. Circuit Board Material: .014” Getek ML200DSS ( r 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Specifications and information are subject to change without notice.
§
§
§
§
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
W eb site: www.wj.com
Page 3 of 7 July 2006
S11, S22 (dB)
)
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Gain (dB)
160 14.1 -25 -21
170 14.2 -33 -23 +21.6 +42 2.7 +5 140
180 14.3 -28 -26
15
Gain / Return Loss (dB)
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)
0
14
-10
S11, S22 (dB)
30 16.6 -19 -21
35 16.8 -20 -16 +21 +39 3.4 +5 140
40 16.8 -13 -14
18
Gain / Return Loss
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)
0
17
-5
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High Dynamic Range FET
FH1
The Communications Edge TM Product Information
Reference Design: 260 MHz, 25 dB Gain
Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current MHz dB dB dB dBm dBm dB V mA 250 25.2 -23 -12 260 25.1 -22 -14 +22.4 +39.5 1.9 +5 140 270 24.9 -13 -17
26
Gain / Return Loss
0
25
-5 S11, S22 (dB) S11, S22 (dB)
Gain (dB)
24
-10
23
-15
1.8
2.1
22
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)
-20
21 0.2
+5V ID=C3 C=1.8e4 pF
-25 0.22 0.24 0.26 Frequency (GHz) 0.28 0.3
ID=C6 ID=R7 C=1000 pF R=2000 Ohm
ID=R6 R=2000 Ohm
NET="FH1"
2
ID=C1 C=1000 pF
ID=R1 L=120 nH
1
ID=L1 L=220 nH
ID=C2 C=1000 pF ID=C5 R=1e4 Ohm C=0.2 pF R=3.3 Ohm
Notes: 1. Circuit Board Material: .0 r 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Reference Design: 460 MHz, 20 dB Gain
Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current MHz dB dB dB dBm dBm dB V mA 450 19.9 -24 -16 460 19.9 -24 -15 +21.6 +42 2.08 +5 140 470 19.9 -21 -15
21
Gain / Return Loss
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)
20
Gain (dB)
19
18
1.95
2.17
17
16 0.34 0.38 0.42 0.46 0.5 Frequency (GHz) 0.54 0.58
ID=R6 R=750 Ohm
ID=C6 C=1000 pF
ID=R7 +5V R=750 Ohm
ID=C3 C=1000 pF
NET="FH1" ID=C1 C=1000 pF ID=R1 L=36 nH
1 2
ID=L1 L=100 nH
ID=R2 L=10 nH ID=C5 R=5000 Ohm
ID=C2 C=1000 pF
Notes: 1. Circuit Board Material: .0 r 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Specifications and information are subject to change without notice.
§
§
§
§
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
W eb site: www.wj.com
) )
0cb &S © & ' a U & ' PV5& !Y 5" !`W ! ©Y BP5! ©Y G ©S G` ©Y GX5V$) !55 $52Q PA )3 H GDDEC 50!B9@87 & $$53 1 a ©W W &UT &SS R 1 I F 0 A # &64 0cb &S © & ' a U & ' PV5& !Y 5" !`W ! ©Y BP5! ©Y G ©S G` ©Y GX5V$) !55 $52Q PA )3 H GDDEC 50!B9@87 & $$53 1 a ©W W &UT &SS R 1 I F 0 A # &64
0
-5
-10
-15
-20
-25
Page 4 of 7 July 2006
High Dynamic Range FET
FH1
The Communications Edge TM Product Information
Reference Design: 790 MHz, 19 dB Gain
Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current GHz dB dB dB dBm dBm dB V mA 746 19.2 -20 -22 790 19.4 -28 -23 +22 +41 2.3 +5 140
+5V ID=C4 C=1e4 pF ID=C6 C=100 pF ID=R7 R=560 Ohm ID=C3 C=100 pF
18.5 18 17.5 17 0.7 0.75 0.8 Frequency (GHz) 0.85 0.9
-15 -20 -25 -30
ID=R6 R=560 Ohm ID=C1 C=100 pF
1
NET="FH1"
2
ID=L1 L=27 nH
ID=R1 L=8.2 nH ID=C5 L=10 nH
ID=R2 L=2.2 nH
ID=C2 C=100 pF
Notes: 1. Circuit Board Material: .0 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Reference Design: 790 MHz, 17 dB Gain
Frequency Gain S11 S22 P1dB OIP3 Noise Figure Voltage Current GHz dB dB dB dBm dBm dB V mA 746 17.3 -19 -22 790 17.4 -19 -22 +22 +41 2.1 +5 140 835 17.4 -16 -21
19
Gain / Return Loss
DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) DB(|S(2,2)|) (R)
0
4 3
S 11, S22 (dB )
Noise Figure vs. Frequency 25 °C 50 °C 90 °C
18
-5
G ain (dB)
17
-10
NF (dB)
2 1 0 740
16
-15
2.0
2.2
15
-20
14 0.7
+5V
-25 0.75
ID=C4 C=10000 pF
760
780
800
S11, S22 (dB)
0.8 Frequency (GHz)
0.85
0.9
ID=C6 ID=R7 C=100 pF R=360 Ohm ID=R6 R=360 Ohm NET="FH1"
2
ID=C3 C=100 pF ID=L1 L=33 nH ID=C2 C=100 pF
ID=C1 C=100 pF
ID=R1 L=12 nH
1
ID=C5 R=10000 Ohm
Notes: 1. Circuit Board Material: .0 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. Specifications and information are subject to change without notice.
§
§
§
§
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
W eb site: www.wj.com
)
)
PV5& !Y 5" !`W ! ©Y BP5! ©Y G ©S `G ©Y `5V) !55 52Q 5A )3 H FGDEC 50!B@87 & &$$53 1 0cb &S © & ' a U & ' a ©W W &UT &SS R 1 I D 0 A9 # 64
Gain (dB)
835 19.3 -15 -22
20 19.5 19
Gain / Return Loss
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)
0 -5 -10
820
840
Frequency (MHz)
PV5& !Y 5" !`W ! ©Y BP5! ©Y G ©S `G ©Y `5V) !55 52Q 5A )3 H FGDEC 50!B@87 & &$$53 1 0cb &S © & ' a U & ' a ©W W &UT &SS R 1 I D 0 A9 # 64
Page 5 of 7 July 2006
High Dynamic Range FET
FH1
The Communications Edge TM Product Information
Reference Design: 880 MHz, 18 dB Gain
Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current GHz dB dB dB dBm dBm dB V mA 850 17.95 -16 -23 875 17.96 -15 -22 +22 +41 1.83 +5 140
+5V
Gain (dB)
17
-10
16
-15
1.8
1.85
15
-20
14 0.7
ID=C4 C=1e4 pF
-25 0.8 Frequency (GHz) 0.9 1
ID=C6 ID=R7 C=100 pF R=360 Ohm ID=R6 R=360 Ohm NET="FH1" ID=C1 C=100 pF ID=R1 L=10 nH
1 2
ID=C3 C=100 pF ID=L1 L=33 nH ID=C2 C=100 pF
ID=C5 R=1e4 Ohm
Notes: 1. Circuit Board Material: .0 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Reference Design: 800 - 2200 MHz, 15 dB Gain
Frequency Gain S11 S22 P1dB OIP3 Noise Figure Supply Voltage Supply Current GHz dB dB dB dBm dBm dB V mA 900 14.9 -22 -14 +22.1 +40.7 2.4 1900 16.3 -10 -9.7 +22.4 +42.0 2.6 +5 140 2140 16.4 -18 -9.6 +22.1 +41.0 2.8
18
Gain / Return Loss
DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) DB(|S(2,2)|) (R)
20
16
10 Return Loss (dB)
Gain (dB)
14
0
12
-10
10
-20
8 0.75 1 1.25 1.5 1.75 Frequency (GHz) 2 2.25
-30
+5V
ID=C4 C=100 pF
ID=C6 C=100 pF ID=R7 R=240 Ohm ID=R6 R=240 Ohm NET="FH1" ID=R1 L=2.7 nH
1 2
ID=C1 R=2.2 Ohm
TLINP ID=TL1 Z0=50 Ohm L=80 mil Eeff=3.4 Loss=0 F0=0 GHz
ID=C3 C=100 pF ID=L1 L=18 nH
ID=C2 C=100 pF C=2 pF ID=C5 L=6.8 nH
Notes: 1. Circuit Board Material: .0 2. Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance. 3. A dc blocking capacitor needs to be placed before C1 if dc is present at the input of the circuit. Specifications and information are subject to change without notice.
d
d
d
d
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
W eb site: www.wj.com
Page 6 of 7 July 2006
S11, S22 (dB)
900 18.00 -15 -22
19
Gain / Return Loss (dB)
DB(|S(1,1)|) (R) DB(|S(2,1)|) (L) DB(|S(2,2)|) (R)
0
18
-5
)
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High Dynamic Range FET
FH1
The Communications Edge TM Product Information
This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded (maximum 245 qC reflow temperature) soldering processes.
FH1-G Mechanical Information
Outline Drawing
Product Marking
The FH1-G will be marked with an “FH1G” designator. An alphanumeric lot code (“XXXX-X”) is also marked below the part designator on the top surface of the package. The obsolete tin-lead package is marked with an “FH1” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section.
MSL / ESD Rating Land Pattern
e e
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard:
Class 1B Passes 500V to
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