2N7002DW

厂商：
YANGJIE(扬杰科技)
封装：
SOT363
描述：
类型：2个N沟道漏源电压(Vdss)：60V 连续漏极电流(Id)：340mA 功率(Pd)：350mW

数据手册：

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数据手册
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2N7002DW 数据手册

RoHS 2N7002DW COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 60V 340mA ＜2.5ohm ＜3.0ohm General Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±30 V Peak Gate-source Voltage Tp

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